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1. 发明授权

US06291880B1 Semiconductor device including an integrally molded lead frame 失效
标题翻译：半导体器件包括一体模制的引线框架
公开(公告)号：US06291880B1
公开(公告)日：2001-09-18
申请号：US09248000
申请日：1999-02-10
申请人： Toshio Ogawa , Masaaki Takahashi , Masahiro Gouda , Noritaka Kamimura , Kazuhiro Suzuki , Junichi Saeki , Kazuji Yamada , Makoto Ishii , Akihiro Tamba
发明人： Toshio Ogawa , Masaaki Takahashi , Masahiro Gouda , Noritaka Kamimura , Kazuhiro Suzuki , Junichi Saeki , Kazuji Yamada , Makoto Ishii , Akihiro Tamba
IPC分类号： H01L2334
CPC分类号： H01L25/165 , H01L23/4334 , H01L24/45 , H01L24/48 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/01079 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19107 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device includes a main circuit part having a semiconductor device formed on an electrode plate of a lead frame and a control circuit part having protective functions, which is integrally molded by a resin mold part into an integral mold structure.
摘要翻译：半导体器件包括主电路部分，其具有形成在引线框架的电极板上的半导体器件和具有保护功能的控制电路部件，该半导体器件通过树脂模具部件整体模制成整体模具结构。

2. 发明授权

US5920119A Power semiconductor module employing metal based molded case and screw fastening type terminals for high reliability 失效
标题翻译：功率半导体模块采用金属模制外壳和螺丝紧固型端子，以实现高可靠性
公开(公告)号：US5920119A
公开(公告)日：1999-07-06
申请号：US802988
申请日：1997-02-21
申请人： Akihiro Tamba , Kazuji Yamada , Ruichi Saito , Tatsuya Shigemura , Yukio Sonobe , Masataka Sasaki , Kazuhiro Suzuki
发明人： Akihiro Tamba , Kazuji Yamada , Ruichi Saito , Tatsuya Shigemura , Yukio Sonobe , Masataka Sasaki , Kazuhiro Suzuki
IPC分类号： H01L25/07 , H01L25/18 , H01L23/12 , H01L23/08 , H01L23/48
CPC分类号： H01L25/18 , H01L25/072 , H01L2224/45015 , H01L2224/45124 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/48472 , H01L24/45 , H01L2924/01004 , H01L2924/01013 , H01L2924/01014 , H01L2924/0105 , H01L2924/01057 , H01L2924/01322 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , H01L2924/19107 , H01L2924/30107
摘要： A power semiconductor module having a power circuit unit; a metal base for sealing the bottom of the module; an insulation substrate for electrically insulating the metal base from the power circuit unit; external input and output terminals connected to the power circuit unit; a resin case in which the external input and output terminals are inserted by integral molding; and a resin encapsulant material has been improved substantially in its reliability through provision of a nut integrally molded with the resin case for fastening the external input and output terminals with a screw; a metal base inserted in the resin case by integral molding; and a recess to receive the end of the screw located immediately below the nut, the recess extending without penetrating the resin case, and the metal base extending to an area below the recess.
摘要翻译：一种功率半导体模块，具有电源电路单元; 用于密封模块底部的金属底座; 用于将金属基底与电力电路单元电绝缘的绝缘基板; 连接到电源电路单元的外部输入和输出端子; 其中通过一体成型插入外部输入和输出端子的树脂壳体; 树脂密封剂材料的可靠性大大提高，通过设置与树脂壳体一体模制的螺母，用螺钉固定外部输入和输出端子; 通过一体成型插入树脂壳体中的金属基座; 以及凹部，用于接收位于螺母正下方的螺钉的端部，所述凹部延伸而不穿透树脂壳体，并且金属基部延伸到凹部下方的区域。

3. 发明申请

US20080258316A1 Power Semiconductor Module 有权
标题翻译：功率半导体模块
公开(公告)号：US20080258316A1
公开(公告)日：2008-10-23
申请号：US12105553
申请日：2008-04-18
申请人： Akihiro Tamba , Kazuhiro Suzuki , Koji Sasaki , Shinji Hiramitsu , Hirokazu Inoue
发明人： Akihiro Tamba , Kazuhiro Suzuki , Koji Sasaki , Shinji Hiramitsu , Hirokazu Inoue
IPC分类号： H01L23/48
CPC分类号： H01L24/48 , H01L23/295 , H01L24/06 , H01L24/32 , H01L24/45 , H01L24/49 , H01L24/73 , H01L24/83 , H01L25/072 , H01L2224/04042 , H01L2224/05553 , H01L2224/05647 , H01L2224/29111 , H01L2224/29116 , H01L2224/2919 , H01L2224/32225 , H01L2224/45015 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/48247 , H01L2224/4846 , H01L2224/48472 , H01L2224/48747 , H01L2224/48799 , H01L2224/48847 , H01L2224/4903 , H01L2224/49111 , H01L2224/4912 , H01L2224/49175 , H01L2224/73265 , H01L2224/83801 , H01L2224/85205 , H01L2224/8592 , H01L2224/92247 , H01L2924/00011 , H01L2924/01006 , H01L2924/0101 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15747 , H01L2924/181 , H01L2924/19043 , H01L2924/2076 , H01L2924/3511 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2924/00015 , H01L2224/83205
摘要： A power semiconductor module having a surface of the power semiconductor chip and an external circuit pattern connected by an aluminum wire, and sealed with an epoxy resin, wherein wire diameter of the aluminum wire is 0.4±0.05 mmφ, and coefficient of linear expansion of the epoxy resin in a rated temperature range of a module is from 15 to 20 ppm/K.
摘要翻译：一种功率半导体模块，其具有功率半导体芯片的表面和通过铝线连接的外部电路图案，并用环氧树脂密封，铝线的线径为0.4±0.05mmφ，线膨胀系数模块额定温度范围内的环氧树脂为15〜20ppm / K。

4. 发明授权

US07928587B2 Power semiconductor module 有权
标题翻译：功率半导体模块
公开(公告)号：US07928587B2
公开(公告)日：2011-04-19
申请号：US12105553
申请日：2008-04-18
申请人： Akihiro Tamba , Kazuhiro Suzuki , Koji Sasaki , Shinji Hiramitsu , Hirokazu Inoue
发明人： Akihiro Tamba , Kazuhiro Suzuki , Koji Sasaki , Shinji Hiramitsu , Hirokazu Inoue
IPC分类号： H01L33/00 , H01L23/48 , H01L23/52 , H01L23/28 , H01L23/29
CPC分类号： H01L24/48 , H01L23/295 , H01L24/06 , H01L24/32 , H01L24/45 , H01L24/49 , H01L24/73 , H01L24/83 , H01L25/072 , H01L2224/04042 , H01L2224/05553 , H01L2224/05647 , H01L2224/29111 , H01L2224/29116 , H01L2224/2919 , H01L2224/32225 , H01L2224/45015 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/48247 , H01L2224/4846 , H01L2224/48472 , H01L2224/48747 , H01L2224/48799 , H01L2224/48847 , H01L2224/4903 , H01L2224/49111 , H01L2224/4912 , H01L2224/49175 , H01L2224/73265 , H01L2224/83801 , H01L2224/85205 , H01L2224/8592 , H01L2224/92247 , H01L2924/00011 , H01L2924/01006 , H01L2924/0101 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15747 , H01L2924/181 , H01L2924/19043 , H01L2924/2076 , H01L2924/3511 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2924/00015 , H01L2224/83205
摘要： A power semiconductor module having a surface of the power semiconductor chip and an external circuit pattern connected by an aluminum wire, and sealed with an epoxy resin, wherein wire diameter of the aluminum wire is 0.4±0.05 mmφ, and coefficient of linear expansion of the epoxy resin in a rated temperature range of a module is from 15 to 20 ppm/K.
摘要翻译：一种功率半导体模块，其具有功率半导体芯片的表面和通过铝线连接的外部电路图案，并用环氧树脂密封，其中铝线的线直径为0.4±0.05mm＆phgr;线性膨胀系数在模块的额定温度范围内的环氧树脂为15〜20ppm / K。

5. 发明授权

US06353258B1 Semiconductor module 失效
标题翻译：半导体模块
公开(公告)号：US06353258B1
公开(公告)日：2002-03-05
申请号：US09603966
申请日：2000-06-26
申请人： Hirokazu Inoue , Ryuichi Saito , Mutsuhiro Mori , Yasutoshi Kurihara , Jin Onuki , Shin Kimura , Satoshi Shimada , Kazuhiro Suzuki , Yukio Kamita , Isao Kobayashi , Kazuji Yamada , Naohiro Momma
发明人： Hirokazu Inoue , Ryuichi Saito , Mutsuhiro Mori , Yasutoshi Kurihara , Jin Onuki , Shin Kimura , Satoshi Shimada , Kazuhiro Suzuki , Yukio Kamita , Isao Kobayashi , Kazuji Yamada , Naohiro Momma
IPC分类号： H01L2334
CPC分类号： H01L23/5386 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/072 , H01L2224/32225 , H01L2224/45015 , H01L2224/45124 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/48699 , H01L2224/48747 , H01L2224/49111 , H01L2224/49113 , H01L2224/73265 , H01L2224/85447 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01068 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15747 , H01L2924/16151 , H01L2924/16315 , H01L2924/181 , H01L2924/2076 , H01L2924/30107 , H01L2924/3011 , H01L2924/351 , H01L2924/00 , H01L2924/00012 , H01L2224/05599
摘要： A semiconductor module has a plurality of power semiconductor devices mounted on a substrate, and a metal foil for wiring is mounted on the substrate so that an asymmetric unit arrangement of the semiconductor devices is formed. In the device, all of the units are arranged in the same direction on the substrate, and all of the units are electrically connected with electrode terminal feet, and the electrode terminal feet are electrically connected with linkage terminal foot. The electrode terminal feet are disposed with a certain interval.
摘要翻译：半导体模块具有安装在基板上的多个功率半导体器件，并且用于布线的金属箔安装在基板上，从而形成半导体器件的不对称单元布置。在该装置中，所有单元在基板上沿相同的方向排列，并且所有单元与电极端子脚电连接，并且电极端子脚与联动端子脚电连接。电极端子脚以一定间隔设置。

6. 发明授权

US5956231A Semiconductor device having power semiconductor elements 失效
标题翻译：具有功率半导体元件的半导体器件
公开(公告)号：US5956231A
公开(公告)日：1999-09-21
申请号：US539075
申请日：1995-10-04
申请人： Kazuji Yamada , Akira Tanaka , Ryuichi Saito , Yasutoshi Kurihara , Tadao Kushima , Takashi Haramaki , Yoshihiko Koike , Takashi Hosokawa , Mamoru Sawahata , Masahiro Koizumi , Jin Onuki , Kazuhiro Suzuki , Isao Kobayashi , Hideo Shimizu , Yutaka Higashimura , Shigeki Sekine , Nobuya Koike , Hideya Kokubun
发明人： Kazuji Yamada , Akira Tanaka , Ryuichi Saito , Yasutoshi Kurihara , Tadao Kushima , Takashi Haramaki , Yoshihiko Koike , Takashi Hosokawa , Mamoru Sawahata , Masahiro Koizumi , Jin Onuki , Kazuhiro Suzuki , Isao Kobayashi , Hideo Shimizu , Yutaka Higashimura , Shigeki Sekine , Nobuya Koike , Hideya Kokubun
IPC分类号： H01L23/049 , H01L23/495 , H01L25/065 , H02M7/00 , H05K7/02 , H05K7/04
CPC分类号： H01L23/49562 , H01L23/049 , H01L24/49 , H01L25/0655 , H01L25/072 , H01L25/18 , H02M7/003 , H01L2224/32225 , H01L2224/45015 , H01L2224/451 , H01L2224/48011 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/49111 , H01L2224/49171 , H01L2224/4943 , H01L2224/49431 , H01L2224/73265 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01025 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01041 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15787 , H01L2924/181 , H01L2924/19043 , H01L2924/2076 , H01L2924/30105 , H01L2924/30107 , H01L2924/3025 , H01L2924/351
摘要： A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.
摘要翻译：一种半导体器件，其中多个半导体元件被结合到绝缘体衬底上的至少一个电极图案上，所述绝缘体衬底在主表面上形成多个电极图案，所述半导体元件的每个电极电连接到所述电极图案，绝缘体基板的另一表面被结合到散热基底上，散热基座的上表面覆盖有用于从外部环境切断半导体元件的构件，将绝缘体基板上的电极与电极电连接的端子设置在切断部件外侧，散热基体的材料的线膨胀系数大于半导体元件的线膨胀系数，小于半导体元件的线膨胀系数的3倍，导热系数大于100 W / mK，半音电感元件布置在至少一个电极表面上，并且在至少两个区域中被绝缘体基底上的另一个电极表面分隔。

7. 发明授权

US07141741B2 Circuit board 失效
标题翻译：电路板
公开(公告)号：US07141741B2
公开(公告)日：2006-11-28
申请号：US10665523
申请日：2003-09-22
申请人： Kazuji Yamada , Akira Tanaka , Ryuichi Saito , Yasutoshi Kurihara , Tadao Kushima , Takashi Haramaki , Yoshihiko Koike , Takashi Hosokawa , Mamoru Sawahata , Masahiro Koizumi , Jin Onuki , Kazuhiro Suzuki , Isao Kobayashi , Hideo Shimizu , Yutaka Higashimura , Shigeki Sekine , Nobuya Koike , Hideya Kokubun
发明人： Kazuji Yamada , Akira Tanaka , Ryuichi Saito , Yasutoshi Kurihara , Tadao Kushima , Takashi Haramaki , Yoshihiko Koike , Takashi Hosokawa , Mamoru Sawahata , Masahiro Koizumi , Jin Onuki , Kazuhiro Suzuki , Isao Kobayashi , Hideo Shimizu , Yutaka Higashimura , Shigeki Sekine , Nobuya Koike , Hideya Kokubun
IPC分类号： H05K1/03
CPC分类号： H01L23/49562 , H01L23/049 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/0655 , H01L25/072 , H01L25/18 , H01L2224/32225 , H01L2224/45015 , H01L2224/451 , H01L2224/48011 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/49111 , H01L2224/49171 , H01L2224/49431 , H01L2224/73265 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01039 , H01L2924/01041 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/014 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15787 , H01L2924/181 , H01L2924/19043 , H01L2924/2076 , H01L2924/30105 , H01L2924/30107 , H01L2924/3025 , H01L2924/351 , H02M7/003 , H01L2924/00 , H01L2924/00012 , H01L2224/05599
摘要： A semiconductor device in which electrodes of a plurality of semiconductor elements are bonded onto at least one of a plurality of electrode patterns on an insulator substrate, the other surface of the insulator substrate being bonded to a heat dissipating base. The upper surface of the heat dissipating base is covered with a member for cutting off the semiconductor elements from the outer environment. Terminals electrically connect the electrodes on said insulator substrate and the electrode placed outside the cutoff member. The material of the heat dissipating base has a linear expanding coefficient larger than that of the semiconductor element and smaller than three times that of the semiconductor element, and a thermal conductivity larger than 100 W/mK. The semiconductor elements are arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.
摘要翻译：一种半导体器件，其中多个半导体元件的电极被结合到绝缘体基板上的多个电极图案中的至少一个上，绝缘体基板的另一个表面被结合到散热基底。散热基座的上表面覆盖有用于从外部环境切断半导体元件的构件。端子电连接所述绝缘体基板上的电极和放置在切断构件外部的电极。散热基体的材料的线膨胀系数大于半导体元件的线膨胀系数，小于半导体元件的三倍，热导率大于100W / mK。半导体元件布置在绝缘体基板上的至少一个电极表面和由另一个电极表面划分的至少两个区域中。

8. 发明授权

US06434008B1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06434008B1
公开(公告)日：2002-08-13
申请号：US09385632
申请日：1998-08-27
申请人： Kazuji Yamada , Akira Tanaka , Ryuichi Saito , Yasutoshi Kurihara , Tadao Kushima , Takashi Haramaki , Yoshihiko Koike , Takashi Hosokawa , Mamoru Sawahata , Masahiro Koizumi , Jin Onuki , Kazuhiro Suzuki , Isao Kobayashi , Hideo Shimizu , Yutaka Higashimura , Shigeki Sekine , Nobuya Koike , Hideya Kokubun
发明人： Kazuji Yamada , Akira Tanaka , Ryuichi Saito , Yasutoshi Kurihara , Tadao Kushima , Takashi Haramaki , Yoshihiko Koike , Takashi Hosokawa , Mamoru Sawahata , Masahiro Koizumi , Jin Onuki , Kazuhiro Suzuki , Isao Kobayashi , Hideo Shimizu , Yutaka Higashimura , Shigeki Sekine , Nobuya Koike , Hideya Kokubun
IPC分类号： H05K702
CPC分类号： H01L23/49562 , H01L23/049 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/0655 , H01L25/072 , H01L25/18 , H01L2224/32225 , H01L2224/45015 , H01L2224/451 , H01L2224/48011 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/49111 , H01L2224/49171 , H01L2224/49431 , H01L2224/73265 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01039 , H01L2924/01041 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/014 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15787 , H01L2924/181 , H01L2924/19043 , H01L2924/2076 , H01L2924/30105 , H01L2924/30107 , H01L2924/3025 , H01L2924/351 , H02M7/003 , H01L2924/00 , H01L2924/00012 , H01L2224/05599
摘要： A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.
摘要翻译：一种半导体器件，其中多个半导体元件被结合到绝缘体衬底上的至少一个电极图案上，所述绝缘体衬底在主表面上形成多个电极图案，所述半导体元件的每个电极电连接到所述电极图案，绝缘体基板的另一表面被结合到散热基底上，散热基座的上表面覆盖有用于从外部环境切断半导体元件的构件，将绝缘体基板上的电极与电极电连接的端子设置在切断部件外侧，散热基体的材料的线膨胀系数大于半导体元件的线膨胀系数，小于半导体元件的线膨胀系数的3倍，导热系数大于100 W / mK，半音电感元件布置在至少一个电极表面上，并且在至少两个区域中被绝缘体基底上的另一个电极表面分隔。

9. 发明授权

US09202622B2 Welding transformer and welding transformer assembly and welding apparatus 有权
标题翻译：焊接变压器和焊接变压器总成及焊接设备
公开(公告)号：US09202622B2
公开(公告)日：2015-12-01
申请号：US13813174
申请日：2012-06-29
申请人： Koji Kai , Kazuki Houzan , Akira Nagai , Kazuhiro Suzuki
发明人： Koji Kai , Kazuki Houzan , Akira Nagai , Kazuhiro Suzuki
IPC分类号： B23K11/24 , H01F27/06 , H01F38/08 , B23K11/11 , H01F27/40
CPC分类号： H01F38/085 , B23K11/115 , B23K11/241 , B23K2101/18 , H01F2027/408
摘要： It is possible to control a welding in a high speed and a high precision large electric current, and consumption electric power is also reduced. In the welding transformer, a loop magnetic core 25, a wound primary coil 12, plural positive side coils 14 and plural negative side coils 16 that are alternately sandwiched between respective gaps 12a of the primary coil 12, are comprised. A coil is fixed on the other surface of a contact base member 62. On the other surface of the contact base member 62, a first connection polar board 44 is electrically connected to a positive side electric conductor 30 through the first connection polar board 44. A negative side coil 16 is electrically connected to a negative side electric conductor 32. The connecting part of the positive side coil 14 and the negative side coil 16 is electrically connected to the third connection polar board 48. By sandwiching a thin insulation layer 31, a positive side electric conductor 30, a rectifying device 18 and a first polar board 34 are arranged on one side; A negative side electric conductor 32, a rectifying device 20 and a second polar board 36 are arranged on the other side; and the first polar board 34 and the second polar board 36 are electrically connected to a third polar board 38. It is possible to use by combining plural units and by connecting an output side in parallel in a small size and a large capacity.
摘要翻译：可以高速，高精度的大电流控制焊接，消耗电力也降低。在焊接变压器中，包括交替夹在初级线圈12的相应间隙12a之间的环形磁芯25，绕组初级线圈12，多个正侧线圈14和多个负侧线圈16。线圈固定在接触基底构件62的另一个表面上。在接触基底构件62的另一个表面上，第一连接极板44通过第一连接极板44电连接到正侧电导体30。负极侧线圈16与负极侧导体32电连接。正极侧线圈14与负极侧线圈16的连接部与第3连接极板48电连接。通过夹持薄层绝缘层31，正侧导电体30，整流装置18和第一极板34一侧配置; 负侧导电体32，整流装置20和第二极板36配置在另一侧。并且第一极板34和第二极板36电连接到第三极板38.可以通过组合多个单元并且通过以小尺寸和大容量并联连接输出侧来使用。

10. 发明授权

US09076256B2 Information processing device, information processing method, and program 有权
标题翻译：信息处理装置，信息处理方法和程序
公开(公告)号：US09076256B2
公开(公告)日：2015-07-07
申请号：US13578952
申请日：2011-03-09
申请人： Hiroyuki Ishige , Kazuhiro Suzuki , Akira Miyashita
发明人： Hiroyuki Ishige , Kazuhiro Suzuki , Akira Miyashita
IPC分类号： G06K9/36 , G06T19/00 , G06T7/00 , G06F3/01
CPC分类号： G06T19/006 , G06F3/011 , G06T7/73
摘要： An information processing apparatus that acquires first posture information corresponding to the information processing apparatus and a first distance coordinate corresponding to the information processing apparatus, and second posture information corresponding to another information processing apparatus and a second distance coordinate corresponding to the another information processing apparatus. The information processing apparatus then calculates an object's position in a virtual space based on the first and second posture information and the first and second distance coordinates.
摘要翻译：一种信息处理装置，其获取与所述信息处理装置对应的第一姿态信息和与所述信息处理装置对应的第一距离坐标，以及与所述另一信息处理装置对应的第二姿势信息和与所述另一信息处理装置对应的第二距离坐标。信息处理装置然后基于第一和第二姿势信息以及第一和第二距离坐标来计算物体在虚拟空间中的位置。

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