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1. 发明授权

US5956231A Semiconductor device having power semiconductor elements 失效
标题翻译：具有功率半导体元件的半导体器件
公开(公告)号：US5956231A
公开(公告)日：1999-09-21
申请号：US539075
申请日：1995-10-04
申请人： Kazuji Yamada , Akira Tanaka , Ryuichi Saito , Yasutoshi Kurihara , Tadao Kushima , Takashi Haramaki , Yoshihiko Koike , Takashi Hosokawa , Mamoru Sawahata , Masahiro Koizumi , Jin Onuki , Kazuhiro Suzuki , Isao Kobayashi , Hideo Shimizu , Yutaka Higashimura , Shigeki Sekine , Nobuya Koike , Hideya Kokubun
发明人： Kazuji Yamada , Akira Tanaka , Ryuichi Saito , Yasutoshi Kurihara , Tadao Kushima , Takashi Haramaki , Yoshihiko Koike , Takashi Hosokawa , Mamoru Sawahata , Masahiro Koizumi , Jin Onuki , Kazuhiro Suzuki , Isao Kobayashi , Hideo Shimizu , Yutaka Higashimura , Shigeki Sekine , Nobuya Koike , Hideya Kokubun
IPC分类号： H01L23/049 , H01L23/495 , H01L25/065 , H02M7/00 , H05K7/02 , H05K7/04
CPC分类号： H01L23/49562 , H01L23/049 , H01L24/49 , H01L25/0655 , H01L25/072 , H01L25/18 , H02M7/003 , H01L2224/32225 , H01L2224/45015 , H01L2224/451 , H01L2224/48011 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/49111 , H01L2224/49171 , H01L2224/4943 , H01L2224/49431 , H01L2224/73265 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01025 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01041 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15787 , H01L2924/181 , H01L2924/19043 , H01L2924/2076 , H01L2924/30105 , H01L2924/30107 , H01L2924/3025 , H01L2924/351
摘要： A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.
摘要翻译：一种半导体器件，其中多个半导体元件被结合到绝缘体衬底上的至少一个电极图案上，所述绝缘体衬底在主表面上形成多个电极图案，所述半导体元件的每个电极电连接到所述电极图案，绝缘体基板的另一表面被结合到散热基底上，散热基座的上表面覆盖有用于从外部环境切断半导体元件的构件，将绝缘体基板上的电极与电极电连接的端子设置在切断部件外侧，散热基体的材料的线膨胀系数大于半导体元件的线膨胀系数，小于半导体元件的线膨胀系数的3倍，导热系数大于100 W / mK，半音电感元件布置在至少一个电极表面上，并且在至少两个区域中被绝缘体基底上的另一个电极表面分隔。

2. 发明授权

US07141741B2 Circuit board 失效
标题翻译：电路板
公开(公告)号：US07141741B2
公开(公告)日：2006-11-28
申请号：US10665523
申请日：2003-09-22
申请人： Kazuji Yamada , Akira Tanaka , Ryuichi Saito , Yasutoshi Kurihara , Tadao Kushima , Takashi Haramaki , Yoshihiko Koike , Takashi Hosokawa , Mamoru Sawahata , Masahiro Koizumi , Jin Onuki , Kazuhiro Suzuki , Isao Kobayashi , Hideo Shimizu , Yutaka Higashimura , Shigeki Sekine , Nobuya Koike , Hideya Kokubun
发明人： Kazuji Yamada , Akira Tanaka , Ryuichi Saito , Yasutoshi Kurihara , Tadao Kushima , Takashi Haramaki , Yoshihiko Koike , Takashi Hosokawa , Mamoru Sawahata , Masahiro Koizumi , Jin Onuki , Kazuhiro Suzuki , Isao Kobayashi , Hideo Shimizu , Yutaka Higashimura , Shigeki Sekine , Nobuya Koike , Hideya Kokubun
IPC分类号： H05K1/03
CPC分类号： H01L23/49562 , H01L23/049 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/0655 , H01L25/072 , H01L25/18 , H01L2224/32225 , H01L2224/45015 , H01L2224/451 , H01L2224/48011 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/49111 , H01L2224/49171 , H01L2224/49431 , H01L2224/73265 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01039 , H01L2924/01041 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/014 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15787 , H01L2924/181 , H01L2924/19043 , H01L2924/2076 , H01L2924/30105 , H01L2924/30107 , H01L2924/3025 , H01L2924/351 , H02M7/003 , H01L2924/00 , H01L2924/00012 , H01L2224/05599
摘要： A semiconductor device in which electrodes of a plurality of semiconductor elements are bonded onto at least one of a plurality of electrode patterns on an insulator substrate, the other surface of the insulator substrate being bonded to a heat dissipating base. The upper surface of the heat dissipating base is covered with a member for cutting off the semiconductor elements from the outer environment. Terminals electrically connect the electrodes on said insulator substrate and the electrode placed outside the cutoff member. The material of the heat dissipating base has a linear expanding coefficient larger than that of the semiconductor element and smaller than three times that of the semiconductor element, and a thermal conductivity larger than 100 W/mK. The semiconductor elements are arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.
摘要翻译：一种半导体器件，其中多个半导体元件的电极被结合到绝缘体基板上的多个电极图案中的至少一个上，绝缘体基板的另一个表面被结合到散热基底。散热基座的上表面覆盖有用于从外部环境切断半导体元件的构件。端子电连接所述绝缘体基板上的电极和放置在切断构件外部的电极。散热基体的材料的线膨胀系数大于半导体元件的线膨胀系数，小于半导体元件的三倍，热导率大于100W / mK。半导体元件布置在绝缘体基板上的至少一个电极表面和由另一个电极表面划分的至少两个区域中。

3. 发明授权

US06434008B1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06434008B1
公开(公告)日：2002-08-13
申请号：US09385632
申请日：1998-08-27
申请人： Kazuji Yamada , Akira Tanaka , Ryuichi Saito , Yasutoshi Kurihara , Tadao Kushima , Takashi Haramaki , Yoshihiko Koike , Takashi Hosokawa , Mamoru Sawahata , Masahiro Koizumi , Jin Onuki , Kazuhiro Suzuki , Isao Kobayashi , Hideo Shimizu , Yutaka Higashimura , Shigeki Sekine , Nobuya Koike , Hideya Kokubun
发明人： Kazuji Yamada , Akira Tanaka , Ryuichi Saito , Yasutoshi Kurihara , Tadao Kushima , Takashi Haramaki , Yoshihiko Koike , Takashi Hosokawa , Mamoru Sawahata , Masahiro Koizumi , Jin Onuki , Kazuhiro Suzuki , Isao Kobayashi , Hideo Shimizu , Yutaka Higashimura , Shigeki Sekine , Nobuya Koike , Hideya Kokubun
IPC分类号： H05K702
CPC分类号： H01L23/49562 , H01L23/049 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/0655 , H01L25/072 , H01L25/18 , H01L2224/32225 , H01L2224/45015 , H01L2224/451 , H01L2224/48011 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/49111 , H01L2224/49171 , H01L2224/49431 , H01L2224/73265 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01039 , H01L2924/01041 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/014 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15787 , H01L2924/181 , H01L2924/19043 , H01L2924/2076 , H01L2924/30105 , H01L2924/30107 , H01L2924/3025 , H01L2924/351 , H02M7/003 , H01L2924/00 , H01L2924/00012 , H01L2224/05599
摘要： A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.
摘要翻译：一种半导体器件，其中多个半导体元件被结合到绝缘体衬底上的至少一个电极图案上，所述绝缘体衬底在主表面上形成多个电极图案，所述半导体元件的每个电极电连接到所述电极图案，绝缘体基板的另一表面被结合到散热基底上，散热基座的上表面覆盖有用于从外部环境切断半导体元件的构件，将绝缘体基板上的电极与电极电连接的端子设置在切断部件外侧，散热基体的材料的线膨胀系数大于半导体元件的线膨胀系数，小于半导体元件的线膨胀系数的3倍，导热系数大于100 W / mK，半音电感元件布置在至少一个电极表面上，并且在至少两个区域中被绝缘体基底上的另一个电极表面分隔。

4. 发明授权

US4645119A Method of brazing an aluminum heat exchanger 失效
标题翻译：钎焊铝热交换器的方法
公开(公告)号：US4645119A
公开(公告)日：1987-02-24
申请号：US627892
申请日：1984-07-05
申请人： Takashi Haramaki , Katsuhiko Shiota , Satoshi Kokura , Takao Funamoto , Akira Tomita
发明人： Takashi Haramaki , Katsuhiko Shiota , Satoshi Kokura , Takao Funamoto , Akira Tomita
IPC分类号： F28F19/06 , B23K1/00 , B23K35/28 , B23K35/34 , B23K35/36 , B23K35/363 , F28D1/047 , F28F1/32 , F28F19/02 , F28F21/08
CPC分类号： F28F21/089 , B23K1/0012 , B23K35/34 , B23K35/3605 , F28D1/0478 , F28F1/32 , F28F21/084
摘要： A heat exchanger and a method of manufacturing a heat exchanger by brazing metal members mainly made of Al or Al alloy is disclosed. The heat exchanger has a plurality of brazed metal members, at least one of the brazed metal members being made of brazing sheet clad with a brazing material. The brazed portions of the metal members or the whole surface of the heat exchanger are coated with a corrosion-resistant fluoride flux consisting essentially of 25-40% KF, 38-54% AlF3 and 3-30% ZnF2 by weight which forms a corrosion-inhibiting metallic film.
摘要翻译：公开了一种热交换器和通过钎焊主要由Al或Al合金制成的金属构件的热交换器的方法。热交换器具有多个钎焊金属构件，钎焊金属构件中的至少一个由钎焊材料包覆的钎焊板制成。金属部件的钎焊部分或热交换器的整个表面涂覆有基本上由25-40％KF，38-54％AlF 3和3-30％ZnF 2重量组成的耐腐蚀氟化物焊剂，其形成腐蚀抑制金属膜。

5. 发明授权

US06452101B1 Multi-core conductive wire and a method of manufacturing the same 失效
标题翻译：多芯导电线及其制造方法
公开(公告)号：US06452101B1
公开(公告)日：2002-09-17
申请号：US09485157
申请日：2000-02-04
申请人： Takashi Haramaki , Izumi Sakurai , Yoshitaka Kojima
发明人： Takashi Haramaki , Izumi Sakurai , Yoshitaka Kojima
IPC分类号： H02G1502
CPC分类号： H01B5/00 , B23K11/115 , B23K2101/32
摘要： An object of the invention is to provide a multi-core conductive wire having the small number of manufacturing processes and a terminal with high strength, and a method of manufacturing the multi-core conductive wire. The multi-core conductive wire is provided with a terminal, at the end portion thereof, where individual strands of the multi-core conductive wire are entangled with each other and the terminal is molded by subjecting to pressure-molding. A method of manufacturing a multi-core conductive wire comprises a step of processing the multi-core conductive wire into a state where individual strands of the multi-core conductive wire are partially entangled with each other; a step of temporarily molding the processed portion; and a step of further applying pressure to the temporarily molded portion for pressure-molding or plastic working.
摘要翻译：本发明的目的是提供一种具有少量制造工艺的多芯导电丝和具有高强度的端子，以及制造多芯导电丝的方法。多芯导线设置有端子，其端部，其中多芯导电线的单个线彼此缠结，并且端子通过进行加压成型而成型。一种多芯导线的制造方法包括以下步骤：所述多芯导电线进入所述多芯导线的各个线部彼此部分地缠结的状态; 暂时模制加工部分的步骤; 以及进一步向临时模制部分施加压力以进行压力成型或塑性加工的步骤。

6. 发明授权

US4691856A Diffusion bonding method using a high energy beam 失效
标题翻译：使用高能束的扩散接合方法
公开(公告)号：US4691856A
公开(公告)日：1987-09-08
申请号：US749764
申请日：1985-06-28
申请人： Takashi Haramaki , Takao Funamoto , Satoshi Kokura , Masahisa Inagaki , Ryutaro Jimbou , Toshimi Sasaki , Kousei Nagayama
发明人： Takashi Haramaki , Takao Funamoto , Satoshi Kokura , Masahisa Inagaki , Ryutaro Jimbou , Toshimi Sasaki , Kousei Nagayama
IPC分类号： B23K20/00 , B23K20/16 , B23K35/00 , B23K19/00
CPC分类号： B23K35/005 , B23K20/00 , B23K20/16 , B23K35/004
摘要： Disclosed is a diffusion bonding method which can be applied to superalloys and comprises forming in advance an alloy layer containing an additional element or elements having a higher diffusion speed than that of the principal constituent element of a base metal and a lower melting point than that of the base metal on the joint surface of the base metal consisting of a heat-resistant superalloy based on Co, Ni, Fe, Ti or the like, and bringing the joint surfaces into contact so as to diffuse B.
摘要翻译：公开了可应用于超级合金的扩散接合方法，包括预先形成含有与基体金属的主要构成元素相比具有更高扩散速度的附加元素的合金层，并且熔点低于由基体Co，Ni，Fe，Ti等的耐热超合金构成的基体金属的接合面上的母材，使接合面接触扩散B.

7. 发明授权

US5231366A Superconducting magnetic field generating apparatus and method of producing the same 失效
标题翻译：超导磁场发生装置及其制造方法
公开(公告)号：US5231366A
公开(公告)日：1993-07-27
申请号：US663471
申请日：1991-03-04
申请人： Takashi Haramaki , Mituo Nakamura , Takao Funamoto , Masahiko Sakamoto , Teruhiro Takizawa , Takeshi Yamagiwa
发明人： Takashi Haramaki , Mituo Nakamura , Takao Funamoto , Masahiko Sakamoto , Teruhiro Takizawa , Takeshi Yamagiwa
IPC分类号： G01R33/381 , A61B5/055 , G01R33/20 , G21B1/11 , H01B12/02 , H01F6/06 , H01L39/02 , H01R4/18 , H01R4/20 , H01R4/68 , H01R43/048
CPC分类号： H01F6/065 , H01L39/02 , H01R4/18 , H01R4/68 , H01R4/20 , H01R43/048 , Y10S505/924 , Y10T29/49014
摘要： A superconducting magnetic field generating apparatus, and coil, a superconducting wire, a method of producing a coil and a method of connecting a superconducting wire which are suitable for such a superconducting magnetic field generating apparatus are disclosed. The superconducting magnetic field generating apparatus has a coil of a wound superconducting wire which is composed of superconducting wires with the end portions thereof connected with each other. Each of the superconducting wires is composed of a plurality of superconducting material wires embedded in a stabilizing member. The group of superconducting material wires is embedded at the connecting portion in a state in which the superconducting material wires are densely gathered to the central portion of the stabilizing member and the superconducting material wires are directly in contact with each other. The stabilizing member exists in the central portion of the assembly of the superconducting material wires and the stabilizing members are closely bonded to the superconducting material wires.
摘要翻译：公开了一种适用于这种超导磁场产生装置的超导磁场产生装置，线圈，超导线，制造线圈的方法和连接超导线的方法。超导磁场产生装置具有由超导线构成的缠绕超导线圈，其端部彼此连接。每个超导线由嵌入在稳定构件中的多根超导材料线构成。超导材料线组在超导材料线密集地聚集到稳定构件的中心部分并且超导材料线彼此直接接触的状态下嵌入连接部分。稳定构件存在于超导材料线的组件的中心部分中，并且稳定构件紧密地结合到超导材料线。

8. 发明授权

US4902867A Method of joining an insulated wire to a conductive terminal 失效
标题翻译：将绝缘电线连接到导电端子的方法
公开(公告)号：US4902867A
公开(公告)日：1990-02-20
申请号：US254306
申请日：1988-10-06
申请人： Takashi Haramaki , Mitsuo Nakamura , Satoshi Kokura , Takao Funamoto , Katsuyoshi Terakado
发明人： Takashi Haramaki , Mitsuo Nakamura , Satoshi Kokura , Takao Funamoto , Katsuyoshi Terakado
IPC分类号： B23K3/04 , B23K1/00 , B23K35/30 , H01R4/02 , H01R43/02
CPC分类号： H01R4/026 , B23K35/30
摘要： A high heat resisting wire (5) is made of amide-imide-coated wire, and a conductive terminal (4) is made of Cu or Cu alloy such as brass P-containing solder, BAg-1, BAg-2 are used as joining assistant (4). A high heat resisting wire (5) is made of an amide-imide-coated wire and a conductive terminal (3) is made of soft steel or SUS steel, a silver-solder is used as joining assistant (4). A metallic joining conductive layer (8) is formed between a Cu core wire (7) of the insulated wire (5) and the conductive terminal (3 ) with the joining assistant (4). The insulated wire (5) is joined to the conductive terminal (3) and a joined body having high joining strength can be obtained.

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