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1. 发明授权

US07161198B2 Semiconductor integrated circuit device having MOS transistor 失效
标题翻译：具有MOS晶体管的半导体集成电路器件
公开(公告)号：US07161198B2
公开(公告)日：2007-01-09
申请号：US10236413
申请日：2002-09-06
申请人： Toshihiko Omi , Hitomi Watanabe , Kazutoshi Ishii , Naoto Saitoh
发明人： Toshihiko Omi , Hitomi Watanabe , Kazutoshi Ishii , Naoto Saitoh
IPC分类号： H01L29/76
CPC分类号： H01L29/7816 , H01L29/0878 , H01L29/1083 , H01L29/1095 , H01L29/42368 , H01L29/7833 , H01L29/7835
摘要： An N-channel MOS transistor of a semiconductor device having a high withstand voltage employs a drain structure with a low concentration and a large diffusion depth, which causes a problem in that a sufficiently high withstand voltage cannot be obtained due to a parasitic NPN transistor formed among the drain, the well, and the semiconductor substrate which are arranged in the stated order. According to the present invention, provided are a semiconductor device, including: a semiconductor substrate; an epitaxial layer having an electric polarity identical with that of the semiconductor substrate, which is formed on the semiconductor substrate; a buried diffusion layer having the electric polarity different from that of the semiconductor substrate, which is formed between the semiconductor substrate and the epitaxial layer; and a well region having the electric polarity identical with that of the buried diffusion layer, which is formed above the buried diffusion layer and is electrically connected therewith, in which a MOS transistor is formed in a well having a structure in which the buried diffusion layer is electrically connected with the well region, and a manufacturing method therefor.
摘要翻译：具有高耐受电压的半导体器件的N沟道MOS晶体管采用具有低浓度和大扩散深度的漏极结构，这导致由于形成的寄生NPN晶体管而不能获得足够高的耐受电压的问题在排列，阱和半导体衬底之中，以所述顺序排列。根据本发明，提供一种半导体器件，包括：半导体衬底; 具有与半导体衬底的电极性相同的电极的外延层，其形成在半导体衬底上; 形成在半导体衬底和外延层之间的具有与半导体衬底的电极性不同的电极的掩埋扩散层; 以及具有与掩埋扩散层的电极性相同的电极性的阱区，其形成在掩埋扩散层的上方并与其电连接，其中MOS晶体管形成在具有埋入扩散层的结构的阱中，与该阱区电连接，及其制造方法。

2. 发明授权

US06545322B2 Semiconductor protection device 有权
标题翻译：半导体保护装置
公开(公告)号：US06545322B2
公开(公告)日：2003-04-08
申请号：US09998943
申请日：2001-10-31
申请人： Kazutoshi Ishii , Toshihiko Omi
发明人： Kazutoshi Ishii , Toshihiko Omi
IPC分类号： H01L2362
CPC分类号： H01L27/027
摘要： There is provided a semiconductor integrated circuit device with high electrostatic resistance. A semiconductor device is provided with a transistor for input-output protection having a desired size in which its channel length is varied with respect to a channel width direction.
摘要翻译：提供了具有高静电电阻的半导体集成电路器件。半导体器件设置有用于输入输出保护的晶体管，其具有其通道长度相对于沟道宽度方向变化的期望尺寸。

3. 发明授权

US06713820B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06713820B2
公开(公告)日：2004-03-30
申请号：US10119420
申请日：2002-04-08
申请人： Toshihiko Omi , Kazutoshi Ishii
发明人： Toshihiko Omi , Kazutoshi Ishii
IPC分类号： H01L2976
CPC分类号： H01L23/4824 , H01L21/823475 , H01L29/41758 , H01L29/4238 , H01L2924/0002 , Y10S257/902 , H01L2924/00
摘要： A semiconductor device is provided in which each of contacts between a source and a drain of a MOS transistor and a metallic wiring is either a contact having an arbitrary one side longer than the other side, or source contacts and well contacts are made batting contacts each having an arbitrary one side of a diffusion region having the same polarity as that of a well shorter than the other side. Thus, the contact shape is longitudinal in a transistor width direction, which makes it possible that a large current is caused to flow with a small interval of gates thereof.
摘要翻译：提供了一种半导体器件，其中MOS晶体管和金属布线的源极和漏极之间的每个触点是具有比另一侧长的任意一侧的触点，或者源极触点和阱触点各自成为击打触点具有与比另一侧短的阱极性相同极性的扩散区域的任意一侧。因此，接触形状在晶体管宽度方向上是纵向的，这使得可能以较小的间隔的栅极流过大电流。

4. 发明授权

US07816749B2 Photoelectric conversion device and method of producing the same, and method of producing line image sensor IC 有权
标题翻译：光电转换装置及其制造方法以及线图像传感器IC的制造方法
公开(公告)号：US07816749B2
公开(公告)日：2010-10-19
申请号：US11963560
申请日：2007-12-21
申请人： Toshihiko Omi , Yoichi Mimuro
发明人： Toshihiko Omi , Yoichi Mimuro
IPC分类号： H01L23/544
CPC分类号： H01L27/14632 , H01L27/14636
摘要： A plurality of line image sensor ICs 110 are formed to be arranged in X, Y directions with gaps therebetween on a semiconductor substrate 101. The gaps between the line image sensor ICs 110 become scribe lines 102X, 102Y. A pattern of dummy interconnects 120 is formed in a region where a short side 110S of an arbitrary line image sensor IC 110 is opposed to a short side 110S of another line image sensor IC 110 adjacent to the arbitrary line image sensor IC 110 in the X direction in a region where the scribe line 102Y is formed. When a material gas is generated by plasma CVD, the material gas is uniformly deposited not only on the line image sensor ICs 110, but also on the dummy interconnects 120. Consequently, a protective film with a uniform thickness can be formed on the line image sensor ICs 110.
摘要翻译：多个行图像传感器IC 110形成为在半导体基板101上沿X，Y方向排列间隙。线图像传感器IC 110之间的间隙成为划线102X，102Y。在任意行图像传感器IC 110的短边110S与X中的任意行图像传感器IC 110相邻的另一行图像传感器IC 110的短边110S相对的区域中形成虚拟互连120的图案形成划线102Y的区域的方向。当通过等离子体CVD产生材料气体时，材料气体不仅均匀地沉积在线图像传感器IC 110上，而且均匀地沉积在虚拟互连件120上。因此，可以在线图像上形成具有均匀厚度的保护膜传感器IC 110。

5. 发明授权

US07705414B2 Photoelectric conversion device and image sensor 有权
标题翻译：光电转换装置和图像传感器
公开(公告)号：US07705414B2
公开(公告)日：2010-04-27
申请号：US11713244
申请日：2007-03-02
申请人： Toshihiko Omi
发明人： Toshihiko Omi
IPC分类号： H01L29/78
CPC分类号： H01L27/14636
摘要： A photoelectric conversion device (10) includes a first conductivity type first semiconductor region (10a) located in a pixel region (11), a second conductivity type second semiconductor region (12) provided in the first semiconductor region (10a), for storing a signal charge, interconnecting portions (13 and 14) for connecting the second semiconductor region (12) with a circuit element provided outside the pixel region (11), and an organic film (16) which is provided above a portion located in the pixel region (11) in the interconnecting portions (13 and 14) through an insulating protective film (15) and held at a predetermined potential. The organic film (16) is made of a thermoplastic polyimide resin containing one of a conductive particle and a conductive fiber.
摘要翻译：光电转换装置（10）包括位于像素区域（11）中的第一导电型第一半导体区域（10a），设置在第一半导体区域（10a）中的第二导电类型第二半导体区域（12），用于存储信号电荷，用于将第二半导体区域（12）与设置在像素区域（11）外部的电路元件连接的互连部分（13和14）和设置在像素区域（11）的部分之上的有机膜（11）通过绝缘保护膜（15）连接在互连部分（13和14）中并保持在预定电位。有机膜（16）由含有导电性粒子和导电性纤维之一的热塑性聚酰亚胺树脂构成。

6. 发明申请

US20070210396A1 Photoelectric conversion device and image sensor 有权
标题翻译：光电转换装置和图像传感器
公开(公告)号：US20070210396A1
公开(公告)日：2007-09-13
申请号：US11713244
申请日：2007-03-02
申请人： Toshihiko Omi
发明人： Toshihiko Omi
IPC分类号： H01L27/14
CPC分类号： H01L27/14636
摘要： A photoelectric conversion device (10) includes a first conductivity type first semiconductor region (10a) located in a pixel region (11), a second conductivity type second semiconductor region (12) provided in the first semiconductor region (10a), for storing a signal charge, interconnecting portions (13 and 14) for connecting the second semiconductor region (12) with a circuit element provided outside the pixel region (11), and an organic film (16) which is provided above a portion located in the pixel region (11) in the interconnecting portions (13 and 14) through an insulating protective film (15) and held at a predetermined potential. The organic film (16) is made of a thermoplastic polyimide resin containing one of a conductive particle and a conductive fiber.
摘要翻译：光电转换装置（10）包括位于像素区域（11）中的第一导电类型的第一半导体区域（10a），设置在第一半导体区域（10a）中的第二导电类型的第二半导体区域，存储信号电荷，用于将第二半导体区域（12）与设置在像素区域（11）外部的电路元件连接的互连部分（13和14）和设置在像素区域（11）外侧的部分的上方的有机膜通过绝缘保护膜（15）在互连部分（13和14）中的像素区域（11）并保持在预定电位。有机膜（16）由含有导电性粒子和导电性纤维之一的热塑性聚酰亚胺树脂构成。

7. 发明授权

US08427140B2 Hall sensor 有权
标题翻译：霍尔传感器
公开(公告)号：US08427140B2
公开(公告)日：2013-04-23
申请号：US13135301
申请日：2011-06-30
申请人： Takaaki Hioka , Toshihiko Omi
发明人： Takaaki Hioka , Toshihiko Omi
IPC分类号： H01L43/06 , G01R33/06
CPC分类号： H01L43/065 , G01R33/07
摘要： Provided is a highly-sensitive Hall element capable of eliminating an offset voltage without increasing the chip size. The Hall element includes: a Hall sensing portion having a shape of a cross and four convex portions; Hall voltage output terminals which are arranged at the centers of the front edges of the four convex portions, respectively; and control current input terminals which are arranged on side surfaces of each of the convex portions independently of the Hall voltage output terminals. In this case, the Hall voltage output terminal has a small width and the control current input terminal has a large width.
摘要翻译：提供了一种高灵敏度的霍尔元件，能够在不增加芯片尺寸的情况下消除偏移电压。霍尔元件包括：具有十字形和四个凸部形状的霍尔感测部分; 霍尔电压输出端子分别布置在四个凸部的前边缘的中心处; 以及与霍尔电压输出端子独立地布置在每个凸部的侧表面上的控制电流输入端子。在这种情况下，霍尔电压输出端子具有较小的宽度，并且控制电流输入端子具有较大的宽度。

8. 发明授权

US08259061B2 Optical detection device, and image display device 有权
标题翻译：光学检测装置和图像显示装置
公开(公告)号：US08259061B2
公开(公告)日：2012-09-04
申请号：US12822511
申请日：2010-06-24
申请人： Toshihiko Omi , Isamu Fujii , Satoshi Machida , Toshiyuki Uchida
发明人： Toshihiko Omi , Isamu Fujii , Satoshi Machida , Toshiyuki Uchida
IPC分类号： G09G3/36
CPC分类号： H01L27/14645 , G01J1/02 , G01J1/0488 , G01J1/18 , G01J1/4228 , G01J1/44 , H01L27/14621 , H04N5/37457
摘要： Provided is a photodetection device which is small in size and has excellent sensitivity. A photodetection device puts cathode terminals of photodiodes having different spectral characteristics into an open end state, and detects light intensity of a desired wavelength region according to a difference in electric charges that have been stored in those photodiodes in a given period of time. The photodiodes employ a system of storing electric charges, and hence even if a photocurrent is small, the photocurrent may be stored to obtain the electric charges required for detection, and the downsizing and high detection performance of a semiconductor device that forms the photodiodes may be achieved. Further, a wide dynamic range may be realized with an electric charge storage time being variable according to the light intensity, to intermittently drive an element required for difference detection at the time of difference detection so as to suppress electric power consumption, or to average the output so as to reduce flicker.
摘要翻译：提供了一种尺寸小且灵敏度高的光检测装置。光检测装置将具有不同光谱特性的光电二极管的阴极端子设置为开放状态，并且根据在给定时间段内存储在那些光电二极管中的电荷的差异来检测期望波长区域的光强度。光电二极管使用存储电荷的系统，因此即使光电流小，也可以存储光电流以获得检测所需的电荷，并且形成光电二极管的半导体器件的小型化和高检测性能可以是实现了此外，可以通过根据光强度可变的电荷存储时间来实现宽的动态范围，以间歇地驱动差分检测时的差异检测所需的元件，以便抑制电力消耗，或者使输出以减少闪烁。

9. 发明申请

US20090160830A1 PHOTODETECTION SEMICONDUCTOR DEVICE, PHOTODETECTOR, AND IMAGE DISPLAY DEVICE 审中-公开
标题翻译：光电半导体器件，光电转换器和图像显示器件
公开(公告)号：US20090160830A1
公开(公告)日：2009-06-25
申请号：US12342212
申请日：2008-12-23
申请人： Toshihiko Omi , Taro Nakata
发明人： Toshihiko Omi , Taro Nakata
IPC分类号： G09G5/00 , H01L31/09 , G01T1/24 , H01L27/144
CPC分类号： H01L31/101 , G01J1/02 , G01J1/0209 , G01J1/0214 , G01J1/04 , G01J1/0437 , G01J1/0488 , G01J1/18 , G01J1/4228 , G01J1/46 , H01L27/14645
摘要： Shields that transmit light to be detected and have conductivity are disposed on light receiving surfaces of photodiodes (1 and 2) to prevent electric charges from being induced to the photodiodes (1 and 2) by electromagnetic waves entered from an external. Two kinds of filters having light transmittance depending on a wavelength of light are disposed on the light receiving surfaces of the photodiodes (1 and 2), respectively, to take a difference between their spectral characteristics. The shield and filter may be made of, for example, polysilicon or a semiconductor thin film of a given conductivity type, and may be readily manufactured by incorporating those manufacturing processes into a semiconductor manufacturing process.
摘要翻译：将透过要被检测并具有导电性的光的屏蔽设置在光电二极管（1和2）的光接收表面上，以防止由外部电磁波引起的电荷被光电二极管（1和2）感应。分别在光电二极管（1和2）的光接收表面上设置两种具有根据光波长的透光率的滤光片，以获得其光谱特性之间的差异。屏蔽和滤波器可以由例如多晶硅或具有给定导电类型的半导体薄膜制成，并且可以通过将这些制造工艺结合到半导体制造工艺中而容易地制造。

10. 发明授权

US08378396B2 Photoelectric conversion device and image sensor using the same 有权
标题翻译：光电转换装置及使用其的图像传感器
公开(公告)号：US08378396B2
公开(公告)日：2013-02-19
申请号：US11262331
申请日：2005-10-28
申请人： Toshihiko Omi
发明人： Toshihiko Omi
IPC分类号： H01L31/101
CPC分类号： H01L27/1463 , H01L27/14623 , H01L27/14625
摘要： A photoelectric conversion device has pixel comprised of a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type disposed in the first semiconductor region. A first diffusion region of the first conductivity type is held at a predetermined potential, covers entirely the first semiconductor region, and covers only a part of an upper portion of the second semiconductor region. A second diffusion region of the second conductivity type covers a part of the upper portion of the second semiconductor region except for the part of the upper portion of the second semiconductor region covered by the first diffusion region. A thick oxide film covers entirely the first diffusion region and covers the upper portion of the second semiconductor region except for the part of the upper portion of the second semiconductor region covered by the second diffusion region.
摘要翻译：光电转换装置具有由第一导电类型的第一半导体区域和设置在第一半导体区域中的第二导电类型的第二半导体区域构成的像素。第一导电类型的第一扩散区域保持在预定电位，全部覆盖第一半导体区域，并且仅覆盖第二半导体区域的上部的一部分。第二导电类型的第二扩散区域覆盖第二半导体区域的上部的一部分，除了由第一扩散区域覆盖的第二半导体区域的上部的一部分之外。厚氧化膜完全覆盖第一扩散区域，并且覆盖第二半导体区域的上部，除了由第二扩散区域覆盖的第二半导体区域的上部的一部分之外。

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