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1. 发明申请

US20090160830A1 PHOTODETECTION SEMICONDUCTOR DEVICE, PHOTODETECTOR, AND IMAGE DISPLAY DEVICE 审中-公开
标题翻译：光电半导体器件，光电转换器和图像显示器件
公开(公告)号：US20090160830A1
公开(公告)日：2009-06-25
申请号：US12342212
申请日：2008-12-23
申请人： Toshihiko Omi , Taro Nakata
发明人： Toshihiko Omi , Taro Nakata
IPC分类号： G09G5/00 , H01L31/09 , G01T1/24 , H01L27/144
CPC分类号： H01L31/101 , G01J1/02 , G01J1/0209 , G01J1/0214 , G01J1/04 , G01J1/0437 , G01J1/0488 , G01J1/18 , G01J1/4228 , G01J1/46 , H01L27/14645
摘要： Shields that transmit light to be detected and have conductivity are disposed on light receiving surfaces of photodiodes (1 and 2) to prevent electric charges from being induced to the photodiodes (1 and 2) by electromagnetic waves entered from an external. Two kinds of filters having light transmittance depending on a wavelength of light are disposed on the light receiving surfaces of the photodiodes (1 and 2), respectively, to take a difference between their spectral characteristics. The shield and filter may be made of, for example, polysilicon or a semiconductor thin film of a given conductivity type, and may be readily manufactured by incorporating those manufacturing processes into a semiconductor manufacturing process.
摘要翻译：将透过要被检测并具有导电性的光的屏蔽设置在光电二极管（1和2）的光接收表面上，以防止由外部电磁波引起的电荷被光电二极管（1和2）感应。分别在光电二极管（1和2）的光接收表面上设置两种具有根据光波长的透光率的滤光片，以获得其光谱特性之间的差异。屏蔽和滤波器可以由例如多晶硅或具有给定导电类型的半导体薄膜制成，并且可以通过将这些制造工艺结合到半导体制造工艺中而容易地制造。

2. 发明授权

US08269717B2 Photodetection device and image display device 有权
标题翻译：光电检测装置和图像显示装置
公开(公告)号：US08269717B2
公开(公告)日：2012-09-18
申请号：US12819849
申请日：2010-06-21
申请人： Toshihiko Omi , Taro Nakata
发明人： Toshihiko Omi , Taro Nakata
IPC分类号： G09G3/36
CPC分类号： H01L31/101 , G01J1/02 , G01J1/0209 , G01J1/0214 , G01J1/0488 , G01J1/18 , G01J1/32 , G01J1/4204 , G01J1/4228 , G01J1/44 , G02F2201/58
摘要： Provided is a photodetection device which is small in size and has excellent sensitivity. The photodetection device (10) puts cathode terminals of photodiodes (1 and 2) having different spectral characteristics, or a photodiode (1) provided with an optical filter and a photodiode (2) provided with a light shield layer, into an open end state, and detects light intensity of a desired wavelength region according to a difference in electric charges that have been stored in those photodiodes in a given period of time. Since the photodiodes 1 and 2 store electric charges, even if a photocurrent is small, it is possible to store the photocurrent to obtain the electric charges required for detection, permitting achievement of downsizing and high detection performance of the semiconductor device on which the photodiodes 1 and 2 are formed. It is also possible to realize a wide dynamic range by making the electric charge storage time variable according to the light intensity, to suppress electric power consumption by intermittently driving an element required for differential detection at the time of differential detection, and to reduce an effect from flicker by averaging the output.
摘要翻译：提供了一种尺寸小且灵敏度高的光检测装置。光检测装置（10）将具有不同光谱特性的光电二极管（1和2）的阴极端子或设置有滤光器的光电二极管（1）和设置有遮光层的光电二极管（2）放入开放状态并且根据在给定时间段内存储在那些光电二极管中的电荷的差异来检测期望波长区域的光强度。由于光电二极管1和2存储电荷，即使光电流小，也可以存储光电流以获得检测所需的电荷，从而可以实现半导体器件的小型化和高检测性能，其中光电二极管1 和2。还可以通过使电荷存储时间根据光强度而变化来实现宽的动态范围，通过间歇地驱动差分检测时的差分检测所需的元件来抑制电力消耗，并且降低效果从平均输出的闪烁。

3. 发明申请

US20100253616A1 PHOTODETECTION DEVICE AND IMAGE DISPLAY DEVICE 有权
标题翻译：光电设备和图像显示设备
公开(公告)号：US20100253616A1
公开(公告)日：2010-10-07
申请号：US12819849
申请日：2010-06-21
申请人： Toshihiko Omi , Taro Nakata
发明人： Toshihiko Omi , Taro Nakata
IPC分类号： G09G3/36 , H01L27/144 , H01L31/102
CPC分类号： H01L31/101 , G01J1/02 , G01J1/0209 , G01J1/0214 , G01J1/0488 , G01J1/18 , G01J1/32 , G01J1/4204 , G01J1/4228 , G01J1/44 , G02F2201/58
摘要： Provided is a photodetection device which is small in size and has excellent sensitivity. The photodetection device (10) puts cathode terminals of photodiodes (1 and 2) having different spectral characteristics, or a photodiode (1) provided with an optical filter and a photodiode (2) provided with a light shield layer, into an open end state, and detects light intensity of a desired wavelength region according to a difference in electric charges that have been stored in those photodiodes in a given period of time. Since the photodiodes 1 and 2 store electric charges, even if a photocurrent is small, it is possible to store the photocurrent to obtain the electric charges required for detection, permitting achievement of downsizing and high detection performance of the semiconductor device on which the photodiodes 1 and 2 are formed. It is also possible to realize a wide dynamic range by making the electric charge storage time variable according to the light intensity, to suppress electric power consumption by intermittently driving an element required for differential detection at the time of differential detection, and to reduce an effect from flicker by averaging the output.
摘要翻译：提供了一种尺寸小且灵敏度高的光检测装置。光检测装置（10）将具有不同光谱特性的光电二极管（1和2）的阴极端子或设置有滤光器的光电二极管（1）和设置有遮光层的光电二极管（2）放入开放状态并且根据在给定时间段内存储在那些光电二极管中的电荷的差异来检测期望波长区域的光强度。由于光电二极管1和2存储电荷，即使光电流小，也可以存储光电流以获得检测所需的电荷，从而可以实现半导体器件的小型化和高检测性能，其中光电二极管1 和2。还可以通过使电荷存储时间根据光强度而变化来实现宽的动态范围，通过间歇地驱动差分检测时的差分检测所需的元件来抑制电力消耗，并且降低效果从平均输出的闪烁。

4. 发明申请

US20090184331A1 PHOTODETECTION SEMICONDUCTOR DEVICE, PHOTODETECTOR, AND IMAGE DISPLAY DEVICE 审中-公开
公开(公告)号：US20090184331A1
公开(公告)日：2009-07-23
申请号：US12342245
申请日：2008-12-23
申请人： Toshihiko Omi , Taro Nakata
发明人： Toshihiko Omi , Taro Nakata
IPC分类号： H01L33/00 , H01L31/0232
CPC分类号： H01L27/14621 , H01L27/14685
摘要： Shields that transmit light to be detected and have conductivity are disposed on light receiving surfaces of photodiodes (1 and 2) to prevent electric charges from being induced to the photodiodes (1 and 2) by electromagnetic waves entered from an external. Two kinds of filters having light transmittance depending on a wavelength of light are disposed on the light receiving surfaces of the photodiodes (1 and 2), respectively, to take a difference between their spectral characteristics. The shield and filter may be made of, for example, polysilicon or a semiconductor thin film of a given conductivity type, and may be readily manufactured by incorporating those manufacturing processes into a semiconductor manufacturing process.

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