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    • 10. 发明授权
    • Substrate processing apparatus and substrate processing method
    • 基板加工装置及基板处理方法
    • US09070549B2
    • 2015-06-30
    • US12680799
    • 2008-09-22
    • Hiroshi TanakaToshiyuki ShiokawaTakao Inada
    • Hiroshi TanakaToshiyuki ShiokawaTakao Inada
    • B08B5/02H01L21/02H01L21/67
    • H01L21/02052H01L21/67028
    • A drying gas is supplied into a drying chamber in a substantially horizontal direction, an obliquely downward direction descendent from the substantially horizontal direction, or a vertically downward direction under a state where a wafer is immersed in a cleaning liquid in a cleaning tank. The wafer is moved from the cleaning tank into the drying chamber, with the drying gas being supplied into the drying chamber. At this time, the supply of the drying gas into the drying chamber is stopped, under a condition where a part of the wafer is immersed in the cleaning liquid stored in the cleaning tank. After the movement of the wafer into the drying chamber has been finished, a drying gas is supplied into the drying chamber in an obliquely upward direction ascendant from the substantially horizontal direction or a vertically upward direction.
    • 在将晶片浸入清洗槽中的清洗液体的状态下,将干燥气体从大致水平方向或垂直向下方向向大致水平方向,倾斜向下方向供给到干燥室。 将晶片从清洁槽移动到干燥室中,其中干燥气体被供应到干燥室中。 此时,在将晶片的一部分浸渍在存储在清洗槽中的清洗液中的状态下,将干燥气体供给到干燥室内停止。 在将晶片移动到干燥室中之后,干燥气体从大致水平方向或垂直向上方向上升的斜上方向供给干燥室。