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1. 发明授权

US06837963B2 Semiconductor device, method of producing a semiconductor device, and semiconductor substrate cleaning apparatus used for the production method 失效
标题翻译：半导体装置，半导体装置的制造方法以及用于制造方法的半导体基板清洗装置
公开(公告)号：US06837963B2
公开(公告)日：2005-01-04
申请号：US09982779
申请日：2001-10-22
申请人： Hiroshi Tanaka , Naoki Yokoi , Yasuhiro Asaoka , Seiji Muranaka , Toshihiko Nagai
发明人： Hiroshi Tanaka , Naoki Yokoi , Yasuhiro Asaoka , Seiji Muranaka , Toshihiko Nagai
IPC分类号： H01L21/302 , B08B7/00 , H01L21/00 , H01L21/205 , H01L21/304 , H01L21/306 , H01L21/3065 , C23F1/00 , C23C16/00
CPC分类号： H01L21/02046 , B08B7/0035 , H01J2237/335 , H01L21/02052 , H01L21/67028
摘要： A semiconductor device producing method that can clean an edge part of a semiconductor substrate with certainty is provided. The method of producing a semiconductor device includes a step of generating ions and a step of accelerating the ions by means of an electric field and radiating an ion flow onto an edge part of a semiconductor substrate to clean the edge part of the semiconductor substrate. The semiconductor substrate is moved relative to the ion flow while maintaining a state in which the ion flow is being radiated onto the edge part. The step of generating ions includes applying a high-frequency voltage between a pair of electrodes to generate the ions between the electrodes.
摘要翻译：提供一种可以确定地清洁半导体衬底的边缘部分的半导体器件制造方法。制造半导体器件的方法包括产生离子的步骤和通过电场加速离子并将离子流辐射到半导体衬底的边缘部分以清洁半导体衬底的边缘部分的步骤。半导体衬底相对于离子流移动，同时保持离子流被辐射到边缘部分上的状态。产生离子的步骤包括在一对电极之间施加高频电压以在电极之间产生离子。

2. 发明授权

US06586145B2 Method of fabricating semiconductor device and semiconductor device 失效
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US06586145B2
公开(公告)日：2003-07-01
申请号：US10073189
申请日：2002-02-13
申请人： Naoki Yokoi , Hiroshi Tanaka , Yasuhiro Asaoka , Seiji Muranaka , Toshihiko Nagai
发明人： Naoki Yokoi , Hiroshi Tanaka , Yasuhiro Asaoka , Seiji Muranaka , Toshihiko Nagai
IPC分类号： G03F900
CPC分类号： H01L21/76802 , H01L21/28123 , H01L21/31144 , H01L21/32134 , H01L21/32137 , H01L21/32139 , H01L29/66545
摘要： A method of fabricating a semiconductor device causing no pattern shifting of a peripheral oxide film etc. in removal of both of an antireflection film and a mask pattern and having a fine structure not implementable solely by photolithography and the semiconductor device are obtained. The method of fabricating a semiconductor device comprises steps of forming a base film of either a silicon film or a silicon compound film on a semiconductor substrate, forming a hard film of either a metal film or a metal compound film on the base film, forming a resist pattern on the hard film, dryly etching the hard film through the resist pattern serving as a mask for forming a hard pattern, dryly etching the base film through the hard pattern serving as a mask and removing the hard pattern by wet etching with a chemical solution not etching at least the base film.
摘要翻译：制造在除去防反射膜和掩模图案中并且具有仅通过光刻不能实现的精细结构的半导体器件的半导体器件的制造方法，并且获得半导体器件。制造半导体器件的方法包括以下步骤：在半导体衬底上形成硅膜或硅化合物膜的基膜，在基膜上形成金属膜或金属化合物膜的硬膜，形成在硬膜上形成抗蚀剂图案，通过作为形成硬图案的掩模的抗蚀剂图案干硬蚀刻硬膜，通过用作掩模的硬图案将基膜干蚀刻并用化学腐蚀法去除硬图案溶液至少不蚀刻基膜。

3. 发明授权

US06642142B2 Substrate cleaning method and method for producing an electronic device 失效
公开(公告)号：US06642142B2
公开(公告)日：2003-11-04
申请号：US10034371
申请日：2002-01-03
申请人： Toshihiko Nagai , Hiroshi Tanaka , Naoki Yokoi , Yasuhiro Asaoka , Seiji Muranaka
发明人： Toshihiko Nagai , Hiroshi Tanaka , Naoki Yokoi , Yasuhiro Asaoka , Seiji Muranaka
IPC分类号： H01L214763
CPC分类号： H01L21/02063 , B08B3/10 , H01L21/02052 , H01L21/31116 , H01L21/67051 , H01L21/76805 , H01L21/76814
摘要： In a water rinsing process performed after the surface of a substrate has been cleaned using a cleaning solution, a first spinning process, in which water is supplied to the surface of the substrate while the substrate is rotated at a first rotation speed, and a second spinning process, in which the substrate is rotated at a second rotation speed that is higher than the first rotation speed, are repeatedly performed alternately.

4. 发明授权

US06531381B2 Method and apparatus for cleaning semiconductor device and method of fabricating semiconductor device 失效
公开(公告)号：US06531381B2
公开(公告)日：2003-03-11
申请号：US09998692
申请日：2001-12-03
申请人： Yasuhiro Asaoka , Hiroshi Tanaka , Naoki Yokoi , Seiji Muranaka , Toshihiko Nagai
发明人： Yasuhiro Asaoka , Hiroshi Tanaka , Naoki Yokoi , Seiji Muranaka , Toshihiko Nagai
IPC分类号： H01L2120
CPC分类号： H01L21/02052 , B08B3/02 , C11D3/3947 , C11D7/08 , C11D11/0047 , C23F1/30 , H01L21/67051
摘要： Disclosed is a method for removing Pt (or Pt—Ir) and BST contaminants on the surface edge, back, and bevel of a semiconductor wafer. A wafer on which a stacked film selected from the group of a Pt film, a Pt—Ir film, and a Ba—Sr—Ti film is formed is prepared. A chemical containing hydrochloric acid is applied only to the surface edge, back, and bevel of the wafer. The surface edge, back, and bevel of the wafer are rinsed with pure water. Further, a chemical containing hydrogen fluoride is applied. The surface edge, back, and bevel of the wafer are rinsed again with pure water.

5. 发明授权

US06340253B1 Resist peeling system and control method of a resist peeling solution 失效
标题翻译：抗蚀剂剥离系统和抗蚀剂剥离溶液的控制方法
公开(公告)号：US06340253B1
公开(公告)日：2002-01-22
申请号：US09610656
申请日：2000-07-05
申请人： Seiji Muranaka , Hiroshi Tanaka , Yoshiyuki Hori
发明人： Seiji Muranaka , Hiroshi Tanaka , Yoshiyuki Hori
IPC分类号： G03D500
CPC分类号： H01L21/67253 , G03F7/3071 , G03F7/422 , H01L21/31133 , H01L21/67057
摘要： A resist peeling system includes a peeling solution tank for storing a resist peeling solution; an electric conductivity monitor for monitoring the electric conductivity of a resist peeling solution; and a additive components tank for estimating the components ratio in the resist peeling solution on the basis of the electric conductivity thereof and adding, when a component of the resist peeling solution is estimated to be insufficient on the basis of the estimated result, the component lacking for the resist peeling solution to the resist peeling solution by a suitable amount.
摘要翻译：抗蚀剂剥离系统包括用于储存抗蚀剂剥离溶液的剥离溶液罐; 用于监测抗蚀剂剥离溶液的电导率的电导率监测器; 和用于基于其电导率估计抗蚀剂剥离溶液中的组分比率的添加剂组分罐，并且当根据估计结果估计抗蚀剂剥离溶液的组分不足时，该组分缺少对抗蚀剂剥离溶液的抗蚀剂剥离溶液适量。

6. 发明授权

US09773597B2 Composite soft magnetic material having low magnetic strain and high magnetic flux density, method for producing same, and electromagnetic circuit component 有权
公开(公告)号：US09773597B2
公开(公告)日：2017-09-26
申请号：US13979988
申请日：2012-02-22
申请人： Hiroaki Ikeda , Hiroshi Tanaka , Kazunori Igarashi
发明人： Hiroaki Ikeda , Hiroshi Tanaka , Kazunori Igarashi
IPC分类号： H01F1/24 , H01F41/02 , B22F1/02 , B22F3/16 , C22C33/02 , C22C38/02 , H01F3/08 , H01F27/255 , H01F1/26 , H01F1/33
CPC分类号： H01F1/24 , B22F1/02 , B22F1/025 , B22F3/16 , B22F3/24 , B22F2998/10 , B22F2999/00 , C22C33/0214 , C22C33/0278 , C22C38/02 , C22C2202/02 , H01F1/26 , H01F1/33 , H01F3/08 , H01F27/255 , H01F41/0246 , B22F3/02 , B22F2003/248 , B22F2201/02 , B22F2201/20
摘要： A composite soft magnetic material having low magnetostriction and high magnetic flux density contains: pure iron-based composite soft magnetic powder particles that are subjected to an insulating treatment by a Mg-containing insulating film or a phosphate film; and Fe—Si alloy powder particles including 11%-16% by mass of Si. A ratio of an amount of the Fe—Si alloy powder particles to a total amount is in a range of 10%-60% by mass. A method for producing the composite soft magnetic material comprises the steps of: mixing a pure iron-based composite soft magnetic powder, and the Fe—Si alloy powder in such a manner that a ratio of the Fe—Si alloy powder to a total amount is in a range of 10%-60%; subjecting a resultant mixture to compression molding; and subjecting a resultant molded body to a baking treatment in a non-oxidizing atmosphere.

7. 发明授权

US09399189B2 CO2 recovery device 有权
标题翻译： CO2回收装置
公开(公告)号：US09399189B2
公开(公告)日：2016-07-26
申请号：US14004708
申请日：2012-04-11
申请人： Tatsuya Tsujiuchi , Hiroshi Tanaka , Hiromitsu Nagayasu , Takuya Hirata , Tsuyoshi Oishi , Masahiko Tatsumi , Koji Kadono
发明人： Tatsuya Tsujiuchi , Hiroshi Tanaka , Hiromitsu Nagayasu , Takuya Hirata , Tsuyoshi Oishi , Masahiko Tatsumi , Koji Kadono
IPC分类号： B01D53/14
CPC分类号： B01D53/1425 , B01D53/1406 , B01D53/1475 , B01D2252/204 , B01D2257/504 , B01D2258/0283 , Y02A50/2342 , Y02C10/04 , Y02C10/06
摘要： A CO2 recovery device includes a cooling tower including a cooling unit for bringing the flue gas, which contains CO2, into contact with water so as to cool flue gas; a CO2-absorbing unit for bringing the flue gas into contact with a CO2 absorbent (lean solution) so as to remove CO2 from flue gas; and a regenerator including an absorbent regenerating unit for releasing CO2 from a rich solution so as to regenerate the CO2 absorbent. The CO2-absorbing unit includes: a cocurrent flow CO2-absorbing unit provided in a cocurrent flow CO2 absorber, for bringing the flue gas into contact with the CO2 absorbent in a cocurrent flow so as to remove CO2 from flue gas and a countercurrent CO2-absorbing unit provided in a CO2 absorber, for bringing the flue gas into contact with the CO2 absorbent in a countercurrent flow so as to remove CO2 from flue gas.
摘要翻译： CO 2回收装置包括：冷却塔，其包括用于使含有CO 2的烟道气与水接触以冷却烟道气的冷却单元; 用于使烟道气与CO 2吸收剂（贫溶液）接触以便从烟道气中除去CO 2的CO 2吸收单元; 以及再生器，其包括用于从富溶液中释放CO 2以便再生CO 2吸收剂的吸收剂再生单元。二氧化碳吸收单元包括：并流CO2吸收单元，其设置在并流CO2吸收器中，用于使烟道气与CO 2吸收剂以并流方式接触，以便从烟气中除去CO 2和逆流CO2- 提供在CO 2吸收器中的吸收单元，用于使烟气以逆流流动与CO 2吸收剂接触，以便从烟道气中除去CO 2。

8. 发明授权

US09340117B2 Power supply and demand leveling system 有权
标题翻译：电力供需调平系统
公开(公告)号：US09340117B2
公开(公告)日：2016-05-17
申请号：US13814154
申请日：2011-07-29
申请人： Nobuo Momose , Makoto Kataniwa , Yasuhiro Nakai , Hiroyuki Kumazawa , Tatsuji Munaka , Yoshitaka Okazaki , Yuichiro Shimura , Hiroshi Tanaka , Hiroshi Irie , Hitoshi Maejima
发明人： Nobuo Momose , Makoto Kataniwa , Yasuhiro Nakai , Hiroyuki Kumazawa , Tatsuji Munaka , Yoshitaka Okazaki , Yuichiro Shimura , Hiroshi Tanaka , Hiroshi Irie , Hitoshi Maejima
IPC分类号： G06F19/00 , B60L11/18 , H02J3/32
CPC分类号： B60L11/1838 , B60L11/1816 , B60L11/1824 , B60L11/1825 , B60L11/184 , B60L11/1842 , B60L11/1844 , B60L11/1846 , B60L11/1877 , B60L2210/30 , B60L2230/22 , B60L2230/24 , B60L2230/40 , B60L2240/545 , B60L2240/70 , B60L2250/16 , H02J3/28 , H02J3/32 , Y02E60/721 , Y02T10/7005 , Y02T10/705 , Y02T10/7088 , Y02T10/7241 , Y02T10/7291 , Y02T90/121 , Y02T90/127 , Y02T90/128 , Y02T90/14 , Y02T90/16 , Y02T90/163 , Y02T90/168 , Y02T90/169 , Y04S10/126 , Y04S30/12 , Y04S30/14
摘要： The invention judges a total power supply/demand condition of the electricity consumers 2 as a whole according to an individual power supply/demand condition of electricity consumers 2, judges a total usable capacity of all batteries 17 according to a usable capacity of the batteries 17 of electric vehicles 10 parked at electricity consumers 2, obtains required charge/discharge amounts of all the batteries 17 according to a result of comparison of the total power supply/demand condition of the electricity consumers 2 as a whole with the total usable capacity of all the batteries 17, subjects the batteries 17 to charge/discharge controls according to the required charge/discharge amounts, the power supply/demand conditions of the electricity consumers 2, and the usable capacities of the batteries.
摘要翻译：根据电力用户2的个体供电条件，本发明判断电力用户2整体的总供电状况，根据电池17的可使用容量来判断全部电池17的总可使用容量停电在电力用户2上的电动车辆10，根据电力用户2的整体供电/供给状况的比较结果与所有电池17的总可用容量的比较结果，获得所有电池17的所需充放电量电池17根据所需的充电/放电量，电力用户2的供电/需求条件以及电池的可用容量对电池17进行充放电控制。

9. 发明授权

US09264332B2 Transmission system, transmission device, packet loss ratio measurement method, and packet loss ratio measurement program 有权
标题翻译：传输系统，传输设备，丢包率测量方法和丢包率测量程序
公开(公告)号：US09264332B2
公开(公告)日：2016-02-16
申请号：US14129075
申请日：2012-06-12
申请人： Akira Sakurai , Hiroshi Tanaka , Masaki Umayabashi
发明人： Akira Sakurai , Hiroshi Tanaka , Masaki Umayabashi
IPC分类号： G01R31/08 , G06F11/00 , G08C15/00 , H04L12/26
CPC分类号： H04L43/0829 , H04L43/0835 , H04L43/0841 , H04L43/0852 , H04L43/106
摘要： In a transmission system capable of measuring packet loss ratio between arbitrary devices upon a transmission path without increasing bandwidth of an OAM frame band, a plurality of transmission devices which have been disposed upon a transmission path are provided with a frame analysis unit which receives data frames so as to analyze the type of the data frames, a count processing unit which stores the number of received frames included in the data frames into storage module provided beforehand, an output line end portion which outputs the data frames, and an OAM processing unit which calculates the packet loss ratio in the transmission path using the number of received frames. The frame analysis unit has a function which, if the data frames are OAM frames, copies the data frames and the OAM processing unit has a function which calculates the packet loss ratio using the copied OAM frames.
摘要翻译：在能够测量传输路径上的任意设备之间的分组丢失率而不增加OAM帧频带宽的传输系统中，设置在传输路径上的多个传输设备设置有帧分析单元，其接收数据帧为了分析数据帧的类型，将数据帧中包含的接收帧的数量存储在预先提供的存储模块中的计数处理单元，输出数据帧的输出线路端部分和OAM处理单元，使用接收帧的数量来计算传输路径中的丢包率。帧分析单元具有这样的功能：如果数据帧是OAM帧，则复制数据帧，并且OAM处理单元具有使用复制的OAM帧来计算分组丢失率的功能。

10. 发明授权

US09070549B2 Substrate processing apparatus and substrate processing method 有权
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US09070549B2
公开(公告)日：2015-06-30
申请号：US12680799
申请日：2008-09-22
申请人： Hiroshi Tanaka , Toshiyuki Shiokawa , Takao Inada
发明人： Hiroshi Tanaka , Toshiyuki Shiokawa , Takao Inada
IPC分类号： B08B5/02 , H01L21/02 , H01L21/67
CPC分类号： H01L21/02052 , H01L21/67028
摘要： A drying gas is supplied into a drying chamber in a substantially horizontal direction, an obliquely downward direction descendent from the substantially horizontal direction, or a vertically downward direction under a state where a wafer is immersed in a cleaning liquid in a cleaning tank. The wafer is moved from the cleaning tank into the drying chamber, with the drying gas being supplied into the drying chamber. At this time, the supply of the drying gas into the drying chamber is stopped, under a condition where a part of the wafer is immersed in the cleaning liquid stored in the cleaning tank. After the movement of the wafer into the drying chamber has been finished, a drying gas is supplied into the drying chamber in an obliquely upward direction ascendant from the substantially horizontal direction or a vertically upward direction.
摘要翻译：在将晶片浸入清洗槽中的清洗液体的状态下，将干燥气体从大致水平方向或垂直向下方向向大致水平方向，倾斜向下方向供给到干燥室。将晶片从清洁槽移动到干燥室中，其中干燥气体被供应到干燥室中。此时，在将晶片的一部分浸渍在存储在清洗槽中的清洗液中的状态下，将干燥气体供给到干燥室内停止。在将晶片移动到干燥室中之后，干燥气体从大致水平方向或垂直向上方向上升的斜上方向供给干燥室。

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