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1. 发明授权

US06837963B2 Semiconductor device, method of producing a semiconductor device, and semiconductor substrate cleaning apparatus used for the production method 失效
标题翻译：半导体装置，半导体装置的制造方法以及用于制造方法的半导体基板清洗装置
公开(公告)号：US06837963B2
公开(公告)日：2005-01-04
申请号：US09982779
申请日：2001-10-22
申请人： Hiroshi Tanaka , Naoki Yokoi , Yasuhiro Asaoka , Seiji Muranaka , Toshihiko Nagai
发明人： Hiroshi Tanaka , Naoki Yokoi , Yasuhiro Asaoka , Seiji Muranaka , Toshihiko Nagai
IPC分类号： H01L21/302 , B08B7/00 , H01L21/00 , H01L21/205 , H01L21/304 , H01L21/306 , H01L21/3065 , C23F1/00 , C23C16/00
CPC分类号： H01L21/02046 , B08B7/0035 , H01J2237/335 , H01L21/02052 , H01L21/67028
摘要： A semiconductor device producing method that can clean an edge part of a semiconductor substrate with certainty is provided. The method of producing a semiconductor device includes a step of generating ions and a step of accelerating the ions by means of an electric field and radiating an ion flow onto an edge part of a semiconductor substrate to clean the edge part of the semiconductor substrate. The semiconductor substrate is moved relative to the ion flow while maintaining a state in which the ion flow is being radiated onto the edge part. The step of generating ions includes applying a high-frequency voltage between a pair of electrodes to generate the ions between the electrodes.
摘要翻译：提供一种可以确定地清洁半导体衬底的边缘部分的半导体器件制造方法。制造半导体器件的方法包括产生离子的步骤和通过电场加速离子并将离子流辐射到半导体衬底的边缘部分以清洁半导体衬底的边缘部分的步骤。半导体衬底相对于离子流移动，同时保持离子流被辐射到边缘部分上的状态。产生离子的步骤包括在一对电极之间施加高频电压以在电极之间产生离子。

2. 发明授权

US06586145B2 Method of fabricating semiconductor device and semiconductor device 失效
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US06586145B2
公开(公告)日：2003-07-01
申请号：US10073189
申请日：2002-02-13
申请人： Naoki Yokoi , Hiroshi Tanaka , Yasuhiro Asaoka , Seiji Muranaka , Toshihiko Nagai
发明人： Naoki Yokoi , Hiroshi Tanaka , Yasuhiro Asaoka , Seiji Muranaka , Toshihiko Nagai
IPC分类号： G03F900
CPC分类号： H01L21/76802 , H01L21/28123 , H01L21/31144 , H01L21/32134 , H01L21/32137 , H01L21/32139 , H01L29/66545
摘要： A method of fabricating a semiconductor device causing no pattern shifting of a peripheral oxide film etc. in removal of both of an antireflection film and a mask pattern and having a fine structure not implementable solely by photolithography and the semiconductor device are obtained. The method of fabricating a semiconductor device comprises steps of forming a base film of either a silicon film or a silicon compound film on a semiconductor substrate, forming a hard film of either a metal film or a metal compound film on the base film, forming a resist pattern on the hard film, dryly etching the hard film through the resist pattern serving as a mask for forming a hard pattern, dryly etching the base film through the hard pattern serving as a mask and removing the hard pattern by wet etching with a chemical solution not etching at least the base film.
摘要翻译：制造在除去防反射膜和掩模图案中并且具有仅通过光刻不能实现的精细结构的半导体器件的半导体器件的制造方法，并且获得半导体器件。制造半导体器件的方法包括以下步骤：在半导体衬底上形成硅膜或硅化合物膜的基膜，在基膜上形成金属膜或金属化合物膜的硬膜，形成在硬膜上形成抗蚀剂图案，通过作为形成硬图案的掩模的抗蚀剂图案干硬蚀刻硬膜，通过用作掩模的硬图案将基膜干蚀刻并用化学腐蚀法去除硬图案溶液至少不蚀刻基膜。

3. 发明授权

US06642142B2 Substrate cleaning method and method for producing an electronic device 失效
公开(公告)号：US06642142B2
公开(公告)日：2003-11-04
申请号：US10034371
申请日：2002-01-03
申请人： Toshihiko Nagai , Hiroshi Tanaka , Naoki Yokoi , Yasuhiro Asaoka , Seiji Muranaka
发明人： Toshihiko Nagai , Hiroshi Tanaka , Naoki Yokoi , Yasuhiro Asaoka , Seiji Muranaka
IPC分类号： H01L214763
CPC分类号： H01L21/02063 , B08B3/10 , H01L21/02052 , H01L21/31116 , H01L21/67051 , H01L21/76805 , H01L21/76814
摘要： In a water rinsing process performed after the surface of a substrate has been cleaned using a cleaning solution, a first spinning process, in which water is supplied to the surface of the substrate while the substrate is rotated at a first rotation speed, and a second spinning process, in which the substrate is rotated at a second rotation speed that is higher than the first rotation speed, are repeatedly performed alternately.

4. 发明授权

US06531381B2 Method and apparatus for cleaning semiconductor device and method of fabricating semiconductor device 失效
公开(公告)号：US06531381B2
公开(公告)日：2003-03-11
申请号：US09998692
申请日：2001-12-03
申请人： Yasuhiro Asaoka , Hiroshi Tanaka , Naoki Yokoi , Seiji Muranaka , Toshihiko Nagai
发明人： Yasuhiro Asaoka , Hiroshi Tanaka , Naoki Yokoi , Seiji Muranaka , Toshihiko Nagai
IPC分类号： H01L2120
CPC分类号： H01L21/02052 , B08B3/02 , C11D3/3947 , C11D7/08 , C11D11/0047 , C23F1/30 , H01L21/67051
摘要： Disclosed is a method for removing Pt (or Pt—Ir) and BST contaminants on the surface edge, back, and bevel of a semiconductor wafer. A wafer on which a stacked film selected from the group of a Pt film, a Pt—Ir film, and a Ba—Sr—Ti film is formed is prepared. A chemical containing hydrochloric acid is applied only to the surface edge, back, and bevel of the wafer. The surface edge, back, and bevel of the wafer are rinsed with pure water. Further, a chemical containing hydrogen fluoride is applied. The surface edge, back, and bevel of the wafer are rinsed again with pure water.

5. 发明授权

US5996242A Drying apparatus and method 失效
标题翻译：干燥装置及方法
公开(公告)号：US5996242A
公开(公告)日：1999-12-07
申请号：US935838
申请日：1997-09-23
申请人： Akinori Matsumoto , Takeshi Kuroda , Cozy Ban , Toko Konishi , Naoki Yokoi
发明人： Akinori Matsumoto , Takeshi Kuroda , Cozy Ban , Toko Konishi , Naoki Yokoi
IPC分类号： H01L21/304 , H01L21/00 , F26B21/06
CPC分类号： H01L21/67034
摘要： A nozzle and an exhaust member are provided opposite to each other with an upward opening of a processing vessel interposed therebetween. A side wall of the processing vessel is smoothly curved inward as the opening is approached upward. The nozzle spouts a nitrogen gas fed from a nitrogen gas feeder as a jet for covering the opening toward an exhaust port of the exhaust member. The jet can effectively function as a curtain because the side wall of the processing vessel is curved. Therefore, a cooling coil necessary for a conventional apparatus is not required. Consequently, instability of the state of the IPA vapor caused by the cooling coil can be eliminated so that defective dryness is relieved or eliminated.
摘要翻译：喷嘴和排气构件彼此相对地设置有处于其间的处理容器的向上开口。当开口向上接近时，处理容器的侧壁平滑地向内弯曲。喷嘴喷出从氮气供给器供给的氮气作为用于向排气构件的排气口覆盖开口的喷射器。由于处理容器的侧壁是弯曲的，所以喷射器可以有效地起到幕帘的作用。因此，不需要常规装置所需的冷却盘管。因此，可以消除由冷却盘管引起的IPA蒸汽的状态的不稳定性，从而消除或消除有缺陷的干燥。

6. 发明授权

US4544936A Heat-sensitive recording sheet 失效
标题翻译：热敏记录纸
公开(公告)号：US4544936A
公开(公告)日：1985-10-01
申请号：US499663
申请日：1983-05-31
申请人： Naoki Yokoi
发明人： Naoki Yokoi
IPC分类号： B41M5/327 , B41M5/333 , C09B11/00 , C09B11/28 , B41M5/18
CPC分类号： B41M5/3275
摘要： A heat-sensitive recording sheet is disclosed, comprising a base having thereon a heat-sensitive layer which contains, as main components, at least two kinds of fluoran dye color formers selected from different groups and a developer which causes coloration of the color former by heating. The color image of the heat-sensitive recording sheet fades less under influence of heat or humidity. Further the heat-sensitive recording sheet has high whiteness and less fogging of the background.
摘要翻译：公开了一种热敏记录片材，其包括其上具有热敏层的基底，该热敏层含有选自不同组的至少两种荧光染料着色剂和显影剂，作为主要组分，加热。热敏记录纸的彩色图像在热或湿度的影响下变得较少。此外，热敏记录片材具有高白度和较少的背景雾化。

7. 发明授权

US08258630B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08258630B2
公开(公告)日：2012-09-04
申请号：US12605504
申请日：2009-10-26
申请人： Naoki Yokoi
发明人： Naoki Yokoi
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L23/5222 , H01L21/7682 , H01L21/76831 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a first layer; a second layer above the first layer; first and second multi-layered structures; and a supporter. The first and second multi-layered structures extend from the first layer to connect to the second layer. The supporter extends from the first layer to connect to the second layer. The supporter is between the first and second multi-layered structures. The supporter is separated from the first and second multi-layered structures by empty space.
摘要翻译：半导体器件包括：第一层; 第一层上面的第二层; 第一和第二多层结构; 和支持者。第一和第二多层结构从第一层延伸以连接到第二层。支持者从第一层延伸到连接到第二层。支撑体位于第一和第二多层结构之间。支持者通过空白空间与第一和第二多层结构分离。

8. 发明申请

US20060099768A1 Method of manufacturing a capacitor 有权
标题翻译：制造电容器的方法
公开(公告)号：US20060099768A1
公开(公告)日：2006-05-11
申请号：US11255972
申请日：2005-10-24
申请人： Naoki Yokoi
发明人： Naoki Yokoi
IPC分类号： H01L21/20
CPC分类号： H01L27/10852 , H01L21/3146 , H01L28/91
摘要： A method of manufacturing a stack capacitance type capacitor is provided, which prevents the problem that the capacitor cannot be formed because a lower electrode collapses with the external wall thereof exposed in forming the lower electrode of the capacitor in a deep hole formed in silicon oxide, and removing silicon oxide that is a support base material for the lower electrode using a solution containing hydrogen fluoride to expose the external wall of the lower electrode. According to the invention, the support base material in which a deep hole is formed is formed with an amorphous carbon film, the amorphous carbon film used as the support base material for the lower electrode is removed by dry etching after forming the lower electrode, and it is thereby possible to prevent the lower electrode from collapsing.
摘要翻译：提供一种堆叠电容型电容器的制造方法，其防止了在形成于氧化硅中的深孔中下电极与形成电容器的下电极的露出的外壁塌陷而不能形成电容器的问题，并使用含氟化氢的溶液除去作为下部电极的支撑基材的氧化硅，露出下部电极的外壁。根据本发明，形成有深孔的支撑基材由无定形碳膜形成，在形成下电极之后，通过干蚀刻除去用作下电极的支撑基材的非晶碳膜，从而可以防止下电极塌陷。

9. 发明授权

US06596630B2 Method of cleaning a silicon substrate after blanket depositing a tungsten film by dipping in a solution of hydrofluoric acid, hydrochloric acid, and/or ammonium hydroxide 失效
标题翻译：通过浸渍在氢氟酸，盐酸和/或氢氧化铵溶液中的方法来清洁硅衬底之后的清洁硅衬底的方法
公开(公告)号：US06596630B2
公开(公告)日：2003-07-22
申请号：US10206107
申请日：2002-07-29
申请人： Naoki Yokoi
发明人： Naoki Yokoi
IPC分类号： H01L214763
CPC分类号： H01L21/02071 , H01L21/02063 , H01L21/76838 , H01L21/76889
摘要： A semiconductor device manufactured by cleaning without dissolving W, Ti, or TiN even if these metallic materials are exposed on the substrates to be cleaned, and a method for manufacturing such a semiconductor device. Impurities present on a silicon substrate can be removed while controlling the etching of a tungsten film exposed on the surface of a silicon substrate, by dipping and cleaning the silicon substrate in one or a plurality of chemical solutions selected from a group consisting of HF, HCl, and NH4OH, under the condition that the surface of the silicon substrate is entirely covered with a tungsten film. After dry etching for patterning the tungsten film and the barrier metal, impurities present on a silicon substrate can be removed while controlling the etching of the tungsten film and the barrier metal exposed on the surface of a silicon substrate, by dipping and cleaning the silicon substrate in one or a plurality of chemical solutions selected from a group consisting of HCl and NH4OH.
摘要翻译：即使这些金属材料暴露在待清洗的基板上，也可以通过清洗而不溶解W，Ti或TiN来制造半导体器件，以及制造这种半导体器件的方法。可以通过在一个或多个选自HF，HCl的一种或多种化学溶液中浸渍和清洁硅衬底来控制存在于硅衬底上的杂质，同时控制暴露在硅衬底的表面上的钨膜的蚀刻和NH 4 OH，在硅衬底的表面完全被钨膜覆盖的条件下。在对钨膜和阻挡金属进行图案化的干蚀刻之后，可以通过浸渍和清洗硅衬底来控制存在于硅衬底上的杂质，同时控制暴露在硅衬底表面上的钨膜和阻挡金属的蚀刻在一种或多种选自HCl和NH 4 OH的化学溶液中。

10. 发明授权

US4603970A Apparatus for inhibiting copying of confidential documents 失效
标题翻译：用于禁止复制机密文件的装置
公开(公告)号：US4603970A
公开(公告)日：1986-08-05
申请号：US509510
申请日：1983-06-30
申请人： Koichi Aota , Katsuhiko Ishikawa , Naoki Yokoi
发明人： Koichi Aota , Katsuhiko Ishikawa , Naoki Yokoi
IPC分类号： G03G21/04 , G03B27/52
CPC分类号： G03G21/046
摘要： An apparatus for inhibiting the copying of confidential documents is disclosed. Confidential documents are treated with an infrared ray-absorbing agent. The apparatus for inhibiting the copying of confidential documents is comprised of a means to detect the presence of the infrared ray-absorbing agent, and a means to stop a copying operation upon detection of the agent or a means to start a control system to make the documents unreadable. Documents may also be provided with a metal layer. The apparatus is then comprised of a means to detect the presence of the metal layer and a means to stop a copying operation or to start a control system adapted to make copied materials undistinguishable or unreadable upon detection of the metal layer.
摘要翻译：公开了一种用于禁止复印机密文件的装置。机密文件用红外线吸收剂处理。用于禁止复印机密文件的装置包括检测红外线吸收剂的存在的装置，以及在检测到该试剂时停止复印操作的装置或启动控制系统的装置，文件不可读。文件也可以设置有金属层。然后，该装置包括检测金属层的存在的装置和用于停止复印操作或启动适于在检测到金属层时使复制材料不可区分或不可读的控制系统的装置。

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