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1. 发明授权

US4903122A Solid-state color imaging apparatus for extended definition television (EDTV) 失效
标题翻译：用于扩展清晰度电视（EDTV）的固态彩色成像装置
公开(公告)号：US4903122A
公开(公告)日：1990-02-20
申请号：US142919
申请日：1988-01-12
申请人： Toshifumi Ozaki , Naoki Ozawa , Shinya Ohba , Itaru Mimura
发明人： Toshifumi Ozaki , Naoki Ozawa , Shinya Ohba , Itaru Mimura
IPC分类号： H04N9/04
CPC分类号： H04N9/045
摘要： A high resolution solid-state color imaging apparatus having two-dimensionally disposed photoelectric sensors are arranged in rows and columns each having a color spectral responsivity characteristic such as by employing color filters. Each of the photoelectric sensors is scanned so as to obtain an intensity signal with respect to each row of each field, and wherein scanning of each field is for the same number of rows as that of each frame. Intensity signals are obtained only by the scanned output of each row. Additional intensity signals equal to half the number of said first mentioned intensity signals are obtained by a 2:1 subsampling of bandwidth-restricted signals by a filter along the vertical temporal frequency, thereby realizing high vertical resolution by the photoelectric image sensors of conventional row numbers and having compatibility with a conventional NTSC system and, furthermore, eliminating aliasing distortion.
摘要翻译：具有二维设置的光电传感器的高分辨率固体彩色成像装置以各种具有色谱响应特性的行和列布置，例如通过使用滤色器。每个光电传感器被扫描以获得相对于每个场的每一行的强度信号，并且其中每个场的扫描是与每个帧相同数量的行。强度信号仅通过每行的扫描输出获得。通过沿着垂直时间频率的滤波器对带宽限制信号进行2:1的子采样来获得等于所述第一提到的强度信号数量的一半的附加强度信号，从而通过常规行号的光电图像传感器实现高垂直分辨率并且具有与常规NTSC系统的兼容性，并且还消除了混叠失真。

2. 发明授权

US4578707A Method of reducing vertical smears of a solid state image sensor 失效
标题翻译：降低固态图像传感器垂直涂片的方法
公开(公告)号：US4578707A
公开(公告)日：1986-03-25
申请号：US662133
申请日：1984-10-18
申请人： Naoki Ozawa , Toshiyuki Akiyama , Shuusaku Nagahara , Shinya Ohba , Haruhisa Ando , Toshifumi Ozaki
发明人： Naoki Ozawa , Toshiyuki Akiyama , Shuusaku Nagahara , Shinya Ohba , Haruhisa Ando , Toshifumi Ozaki
IPC分类号： H04N5/217 , H04N3/12
CPC分类号： H04N5/2175
摘要： Herein disclosed is a method of reducing the vertical smears which are generated in a solid state image sensor including a plurality of vertical signal lines for transferring signal charges in a vertical direction and at least one charge transfer device for transferring the signal charges in a horizontal direction.The smear charges stored in the vertical signal lines and the signal charges generated in a photoelectric conversion element in response to an incident ray are inputted separately of each other for a horizontal blanking period to the charge transfer device for the horizontal transfer. During a tracing period, a smear voltage and a signal voltage are outputted separately of each other from said charge transfer device. The smear voltage adjusted is subtracted from the signal voltage to eliminate the smear component which has been mixed into the signal voltage.
摘要翻译：这里公开了一种减少在包括用于在垂直方向上传送信号电荷的多个垂直信号线的固态图像传感器中产生的垂直涂片的方法，以及用于在水平方向上传送信号电荷的至少一个电荷转移装置。存储在垂直信号线中的拖尾电荷和在光电转换元件中产生的响应于入射光线的信号电荷在水平消隐期间彼此分开地输入到用于水平传送的电荷转移装置。在跟踪期间，污染电压和信号电压彼此分离地从所述电荷转移装置输出。从信号电压中减去调整的污迹电压，以消除已混入信号电压的污迹分量。

3. 发明授权

US4942474A Solid-state imaging device having photo-electric conversion elements and other circuit elements arranged to provide improved photo-sensitivity 失效
标题翻译：具有光电转换元件和其它电路元件的固态成像装置被布置成提供改善的光敏性
公开(公告)号：US4942474A
公开(公告)日：1990-07-17
申请号：US281220
申请日：1988-12-08
申请人： Hajime Akimoto , Shinya Ohba , Toshifumi Ozaki
发明人： Hajime Akimoto , Shinya Ohba , Toshifumi Ozaki
IPC分类号： H04N5/3745
CPC分类号： H04N3/1512
摘要： A solid-state imaging device including a plurality of photoelectric conversion elements (for example, photodiodes) arranged on a semiconductor substrate so as to form a matrix and read-out means for reading out signal charges which are stored in the photodiodes in accordance with incident light, in a predetermined order, is disclosed in which device the read-out means is made up of a plurality of active elements such as a MOS transistor connected to a photodiode, part of the active elements are used as a pixel amplifier for amplifying the signal charge of the photodiode in such a manner that the signal charge is converted into a current or voltage, the output of the pixel amplifier at a time the signal charge of the photodiode is not applied to the input part of the pixel amplifier and the output of the pixel amplifier at a time the signal charge of the photodiode is applied to the input part of the pixel amplifier are separately stored in a pair of storage means, and the outputs of a plurality of pairs of storage means are successively taken out in accordance with a scanning signal.
摘要翻译：一种固态成像装置，其包括布置在半导体衬底上的多个光电转换元件（例如，光电二极管），以形成矩阵和读出装置，用于根据事件读出存储在光电二极管中的信号电荷公开了以预定顺序的光，读出装置由多个有源元件（例如连接到光电二极管的MOS晶体管）构成，其中有源元件的一部分用作像素放大器，用于放大光电二极管的信号电荷使得信号电荷被转换为电流或电压，在光电二极管的信号电荷未被施加到像素放大器的输入部分的时间处的像素放大器的输出和输出在光电二极管的信号电荷施加到像素放大器的输入部分的时间分别存储在一对存储装置中，并且输出的像素放大器的输出根据扫描信号依次取出多对存储装置。

4. 发明授权

US4814848A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4814848A
公开(公告)日：1989-03-21
申请号：US58825
申请日：1987-06-05
申请人： Hajime Akimoto , Harushisa Ando , Toshifumi Ozaki , Hideyuki Ono , Shinya Ohba , Masaaki Nakai , Norio Koike
发明人： Hajime Akimoto , Harushisa Ando , Toshifumi Ozaki , Hideyuki Ono , Shinya Ohba , Masaaki Nakai , Norio Koike
IPC分类号： H01L27/146 , H01L27/148 , H01L29/78 , H01L27/14 , H01L29/06
CPC分类号： H01L27/14887
摘要： A solid-state imaging device having a plurality of semiconductor layers of a first conductivity type for photo-electric conversion provided on the surface of a first semiconductor layer of a second conductivity type which is formed on a part of one surface of a semiconductor substrate of the first conductivity type, a semiconductor layer of the first conductivity type for charge transfer provided on the surface of a second semiconductor layer of the second conductivity type which is formed on a part of the surface of the substrate, and a signal output means. The first semiconductor layer of the second conductivity type and the second semiconductor layer of the second conductivity type are formed in different steps so that the first semiconductor layer is disposed deeper than the second semiconductor layer.
摘要翻译：一种具有多个第一导电类型的用于光电转换的半导体层的固态成像装置，其设置在第二导电类型的第一半导体层的表面上，该第二半导体层形成在半导体衬底的一个表面的一部分上第一导电型，形成在基板表面的一部分上的第二导电类型的第二半导体层的表面上的用于电荷转移的第一导电类型的半导体层和信号输出装置。第二导电类型的第一半导体层和第二导电类型的第二半导体层以不同的步骤形成，使得第一半导体层被设置为比第二半导体层更深。

5. 发明授权

US4809075A Solid-state imaging device having an amplifying means in the matrix arrangement of picture elements 失效
标题翻译：具有在像素的矩阵排列中的放大装置的固态成像装置
公开(公告)号：US4809075A
公开(公告)日：1989-02-28
申请号：US109319
申请日：1987-10-19
申请人： Hajime Akimoto , Toshifumi Ozaki , Shinya Ohba
发明人： Hajime Akimoto , Toshifumi Ozaki , Shinya Ohba
IPC分类号： H01L27/146 , H01L27/148 , H04N5/335 , H04N5/357 , H04N5/359 , H04N5/363 , H04N5/374 , H04N5/3745 , H04N5/378 , H04N3/14
CPC分类号： H04N5/37457 , H01L27/14818 , H01L27/14831 , H04N5/378
摘要： A solid-state imaging device is constructed by integrating a plurality of face plate elements of an imager in the shape of a matrix on a semiconductor substrate. The face plate elements are formed of photodiodes, in which charges corresponding to incident light are accumulated. The charges are converted into currents or voltages by a plurality of amplifying means disposed in the matrix and which are provided adjacent to the photodiodes. The currents or the voltages obtained through conversion are delivered out of the matrix through signal lines. To the signal lines a correlated double sampling circuit is connected, and this curcuit detects a difference in outputs of the amplifying means between a case when the charges of the photodiodes are not present in the input portions of the amplifying means and a case when they are present therein.
摘要翻译：固态成像装置通过在半导体衬底上集成成像器形状的成像器的多个面板元件而构成。面板元件由光电二极管形成，其中对应于入射光的电荷被累积。通过设置在矩阵中并与光电二极管相邻设置的多个放大装置将电荷转换成电流或电压。通过转换获得的电流或电压通过信号线传送出矩阵。对于信号线，连接相关的双采样电路，并且该电路在放大装置的输入部分中不存在光电二极管的电荷的情况与它们之间的情况下检测放大装置的输出的差异在其中存在。

6. 发明授权

US4621291A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4621291A
公开(公告)日：1986-11-04
申请号：US462763
申请日：1983-02-01
申请人： Iwao Takemoto , Shinya Ohba , Masakazu Aoki , Haruhisa Ando , Masaaki Nakai , Toshifumi Ozaki , Takuya Imaide
发明人： Iwao Takemoto , Shinya Ohba , Masakazu Aoki , Haruhisa Ando , Masaaki Nakai , Toshifumi Ozaki , Takuya Imaide
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/365 , H04N5/372 , H04N5/374 , H04N5/378 , H04N3/14
CPC分类号： H04N3/1568
摘要： This invention relates to an area imaging device having an array of picture elements formed of photodiodes and insulated-gate MOSTs which is vertically scanned by a shift register and horizontally scanned by a charge transfer device (CTD). The solid-state imaging device according to this invention has a transfer MOST provided between a vertical signal output line and a horizontal switch MOST, a resetting MOST connected to the junction between said transfer MOST and the horizontal switch MOST, and a mechanism for setting the vertical signal line at a reference potential just before signal transfer. The transfer MOST connected between the junction of the horizontal switch MOST and the resetting MOST and the vertical signal line is a double-gate MOST formed of a series connection of a transfer gate and another transfer gate. Therefore, the charges under the gate of the transfer MOST can be removed for fixed noise to be greatly reduced.
摘要翻译：本发明涉及一种具有由光电二极管和绝缘栅极MOST形成的像素阵列的区域成像装置，其由移位寄存器垂直扫描并由电荷转移装置（CTD）水平扫描。根据本发明的固态成像装置具有设置在垂直信号输出线和水平开关MOST之间的转移MOST，连接到所述传输MOST和水平开关MOST之间的连接处的复位MOST，以及用于设置在信号传输之前的垂直信号线处于参考电位。连接在水平开关MOST和复位MOST的连接点与垂直信号线之间的传输MOST是由传输门和另一个传输门的串联连接形成的双栅极MOST。因此，为了降低固定噪声，可以去除传输MOST的栅极下的电荷。

7. 发明授权

US4908684A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4908684A
公开(公告)日：1990-03-13
申请号：US70552
申请日：1987-07-07
申请人： Norio Koike , Toshifumi Ozaki , Masaaki Nakai , Haruhisa Ando , Shinya Ohba , Hideyuki Ono , Hajime Akimoto , Hajime Kinugasa
发明人： Norio Koike , Toshifumi Ozaki , Masaaki Nakai , Haruhisa Ando , Shinya Ohba , Hideyuki Ono , Hajime Akimoto , Hajime Kinugasa
IPC分类号： H01L27/146 , H01L27/148
CPC分类号： H01L27/14887
摘要： A solid-state imaging device includes a vertical CCD shift register for transferring electric charge. The electrode of the vertical CCD located nearest to the substrate is extended outside of the region of the vertical CCD to a region of a layer where isolation is required. The layer is thus imparted with two functions, that is, the function of the CCD electrode and that of the iolation electrode. An overflow transistor is also provided to discharge excess charge produced by high intensity light.
摘要翻译：固态成像装置包括用于传送电荷的垂直CCD移位寄存器。位于最靠近基板的垂直CCD的电极在垂直CCD的区域的外部延伸到需要隔离的层的区域。因此，该层具有两种功能，即CCD电极和绝缘电极的功能。还提供溢流晶体管以排出由高强度光产生的过量电荷。

8. 发明授权

US4532549A Solid-state imaging device with high quasi-signal sweep-out efficiency and high signal charge transfer efficiency 失效
标题翻译：具有高准信号扫频效率和高信号电荷转移效率的固态成像装置
公开(公告)号：US4532549A
公开(公告)日：1985-07-30
申请号：US473865
申请日：1983-03-10
申请人： Toshifumi Ozaki , Shinya Ohba , Iwao Takemoto , Masaaki Nakai , Haruhisa Ando , Shusaku Nagahara , Takuya Imaide , Kenji Takahashi , Toshiyuki Akiyama
发明人： Toshifumi Ozaki , Shinya Ohba , Iwao Takemoto , Masaaki Nakai , Haruhisa Ando , Shusaku Nagahara , Takuya Imaide , Kenji Takahashi , Toshiyuki Akiyama
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/365 , H04N5/369 , H04N5/372 , H04N5/374 , H04N5/378 , H04N5/30
CPC分类号： H01L27/14643
摘要： Disclosed is a solid-state imaging device wherein optical information of a number of photo-electric conversion elements arranged in a matrix is read into vertical signal lines by a vertical shift register and then the optical information on the vertical signal lines is horizontally scanned by a horizontal register of a charge transfer device. Bias charge storage means and quasi-signal sweep-out drains are disposed between the horizontal register and the vertical signal lines, and a bias charge input means is arranged in the horizontal register. In order to ensure high efficiency in transferring signals between the vertical lines to the storage means, the sweep-out drains and the charge transfer device, it is arranged for bias charges to be provided at each stage of transfer. Thus, bias charges supplied from the storage means are used to transfer charges from the vertical lines to the storage means. Similarly bias charges directly injected from the quasi-signal sweep-out drains are used to sweep out quasi-signals from the storage means to the quasi-signal sweep-out drains. Finally bias charges supplied from the bias charge input means of the charge transfer device are used to read signals from the storage means into the charge transfer device. By virtue of this, the sweep-out efficiency of the quasi-signals from the capacitances which supply the bias charges and a read-out efficiency of the signal charges are enhanced and a high quality of video signal is produced.
摘要翻译：公开了一种固态成像装置，其中以矩阵形式布置的多个光电转换元件的光学信息被垂直移位寄存器读入垂直信号线，然后垂直信号线上的光信息被水平扫描电荷转移装置的水平寄存器。偏置电荷存储装置和准信号扫除漏极设置在水平寄存器和垂直信号线之间，偏置电荷输入装置布置在水平寄存器中。为了确保在垂直线之间向存储装置，扫除漏极和电荷转移装置传输信号的高效率，布置为在每个转移阶段提供偏置电荷。因此，使用从存储装置提供的偏置电荷将电荷从垂直线传送到存储装置。类似地，从准信号扫除漏极直接注入的偏置电荷用于将准信号从存储装置扫除到准信号扫除漏极。最后，从电荷转移装置的偏置电荷输入装置提供的偏置电荷用于从存储装置读取信号到电荷转移装置中。由此，来自提供偏置电荷的电容的准信号的扫除效率和信号电荷的读出效率被增强，并且产生高质量的视频信号。

9. 发明授权

US4443818A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4443818A
公开(公告)日：1984-04-17
申请号：US329609
申请日：1981-12-10
申请人： Shinya Ohba , Masaaki Nakai , Toshifumi Ozaki , Kenji Takahashi
发明人： Shinya Ohba , Masaaki Nakai , Toshifumi Ozaki , Kenji Takahashi
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/369 , H04N5/372 , H04N3/14 , G11C7/06
CPC分类号： H04N3/1512 , H01L27/14643 , H04N3/1568
摘要： A solid-state imaging device comprises an array of picture elements and a horizontal CTD shift register. In a horizontal blanking period, two or more sets of signals from vertical signal output lines coupled to the picture element array are stored in the horizontal CTD shift register. In a horizontal scanning period, the horizontal CTD shift register operates in a 3-phase (or 4-phase) driving fashion to deliver picture image information signal to its output part.
摘要翻译：固态成像装置包括像素阵列和水平CTD移位寄存器。在水平消隐期间，耦合到像素阵列的垂直信号输出线的两组或更多组信号存储在水平CTD移位寄存器中。在水平扫描周期中，水平CTD移位寄存器以三相（或四相）驱动方式工作，以将图像信息信号传送到其输出部分。

10. 发明授权

US4862487A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4862487A
公开(公告)日：1989-08-29
申请号：US178197
申请日：1988-04-06
申请人： Haruhisa Ando , Masaaki Nakai , Hideyuki Ono , Toshifumi Ozaki , Shinya Ohba , Norio Koike
发明人： Haruhisa Ando , Masaaki Nakai , Hideyuki Ono , Toshifumi Ozaki , Shinya Ohba , Norio Koike
IPC分类号： G11C19/28 , G11C27/04 , H01L27/148 , H04N5/335 , H04N5/341 , H04N5/353 , H04N5/369 , H04N5/3728
CPC分类号： H04N3/1525 , G11C19/282 , G11C27/04 , H01L27/14831 , H04N3/1556
摘要： Vertical CCD registers constituting parts of an interline type CCD imaging device hold independently the signal charges transferred from photoelectric conversion elements and having different storage durations. Transfer of charge to the vertical CCD registers from the photoelectric conversion element is performed at least twice during one field period. The vertical CCD registers transfer the signal charges of different storage durations independent of one another.
摘要翻译：构成行间CCD型CCD成像装置的垂直CCD寄存器独立地保持从光电转换元件传送的信号电荷并具有不同的存储持续时间。从光电转换元件向垂直CCD寄存器的电荷转移至少在一个场期间进行两次。垂直CCD寄存器将不同存储持续时间的信号电荷彼此独立地传输。

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