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1. 发明授权

US4908684A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4908684A
公开(公告)日：1990-03-13
申请号：US70552
申请日：1987-07-07
申请人： Norio Koike , Toshifumi Ozaki , Masaaki Nakai , Haruhisa Ando , Shinya Ohba , Hideyuki Ono , Hajime Akimoto , Hajime Kinugasa
发明人： Norio Koike , Toshifumi Ozaki , Masaaki Nakai , Haruhisa Ando , Shinya Ohba , Hideyuki Ono , Hajime Akimoto , Hajime Kinugasa
IPC分类号： H01L27/146 , H01L27/148
CPC分类号： H01L27/14887
摘要： A solid-state imaging device includes a vertical CCD shift register for transferring electric charge. The electrode of the vertical CCD located nearest to the substrate is extended outside of the region of the vertical CCD to a region of a layer where isolation is required. The layer is thus imparted with two functions, that is, the function of the CCD electrode and that of the iolation electrode. An overflow transistor is also provided to discharge excess charge produced by high intensity light.
摘要翻译：固态成像装置包括用于传送电荷的垂直CCD移位寄存器。位于最靠近基板的垂直CCD的电极在垂直CCD的区域的外部延伸到需要隔离的层的区域。因此，该层具有两种功能，即CCD电极和绝缘电极的功能。还提供溢流晶体管以排出由高强度光产生的过量电荷。

2. 发明授权

US4862487A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4862487A
公开(公告)日：1989-08-29
申请号：US178197
申请日：1988-04-06
申请人： Haruhisa Ando , Masaaki Nakai , Hideyuki Ono , Toshifumi Ozaki , Shinya Ohba , Norio Koike
发明人： Haruhisa Ando , Masaaki Nakai , Hideyuki Ono , Toshifumi Ozaki , Shinya Ohba , Norio Koike
IPC分类号： G11C19/28 , G11C27/04 , H01L27/148 , H04N5/335 , H04N5/341 , H04N5/353 , H04N5/369 , H04N5/3728
CPC分类号： H04N3/1525 , G11C19/282 , G11C27/04 , H01L27/14831 , H04N3/1556
摘要： Vertical CCD registers constituting parts of an interline type CCD imaging device hold independently the signal charges transferred from photoelectric conversion elements and having different storage durations. Transfer of charge to the vertical CCD registers from the photoelectric conversion element is performed at least twice during one field period. The vertical CCD registers transfer the signal charges of different storage durations independent of one another.
摘要翻译：构成行间CCD型CCD成像装置的垂直CCD寄存器独立地保持从光电转换元件传送的信号电荷并具有不同的存储持续时间。从光电转换元件向垂直CCD寄存器的电荷转移至少在一个场期间进行两次。垂直CCD寄存器将不同存储持续时间的信号电荷彼此独立地传输。

3. 发明授权

US4689687A Charge transfer type solid-state imaging device 失效
标题翻译：电荷转移型固态成像装置
公开(公告)号：US4689687A
公开(公告)日：1987-08-25
申请号：US796752
申请日：1985-11-12
申请人： Norio Koike , Masaaki Nakai , Haruhisa Ando , Toshifumi Ozaki , Shinya Ohba , Hideyuki Ono , Toshiyuki Akiyama
发明人： Norio Koike , Masaaki Nakai , Haruhisa Ando , Toshifumi Ozaki , Shinya Ohba , Hideyuki Ono , Toshiyuki Akiyama
IPC分类号： H01L27/148 , H04N5/359 , H04N5/3728 , H04N3/14
CPC分类号： H01L27/14831 , H04N5/3595 , H04N5/3728
摘要： A charge transfer type solid-state device incorporating a charge coupled device (CCD). In order to eliminate field after image and smear, at least two electrode pairs are provided in a vertical CCD shift register for transferring the signal charges stored in photoelectric conversion elements, the electrode pairs being disposed within the vertical pitch of the photoelectric conversion elements. P
摘要翻译：包含电荷耦合器件（CCD）的电荷转移型固态器件。为了消除图像和污迹后的场，在垂直CCD移位寄存器中提供至少两个电极对，用于传送存储在光电转换元件中的信号电荷，电极对设置在光电转换元件的垂直间距内。

4. 发明授权

US4814848A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4814848A
公开(公告)日：1989-03-21
申请号：US58825
申请日：1987-06-05
申请人： Hajime Akimoto , Harushisa Ando , Toshifumi Ozaki , Hideyuki Ono , Shinya Ohba , Masaaki Nakai , Norio Koike
发明人： Hajime Akimoto , Harushisa Ando , Toshifumi Ozaki , Hideyuki Ono , Shinya Ohba , Masaaki Nakai , Norio Koike
IPC分类号： H01L27/146 , H01L27/148 , H01L29/78 , H01L27/14 , H01L29/06
CPC分类号： H01L27/14887
摘要： A solid-state imaging device having a plurality of semiconductor layers of a first conductivity type for photo-electric conversion provided on the surface of a first semiconductor layer of a second conductivity type which is formed on a part of one surface of a semiconductor substrate of the first conductivity type, a semiconductor layer of the first conductivity type for charge transfer provided on the surface of a second semiconductor layer of the second conductivity type which is formed on a part of the surface of the substrate, and a signal output means. The first semiconductor layer of the second conductivity type and the second semiconductor layer of the second conductivity type are formed in different steps so that the first semiconductor layer is disposed deeper than the second semiconductor layer.
摘要翻译：一种具有多个第一导电类型的用于光电转换的半导体层的固态成像装置，其设置在第二导电类型的第一半导体层的表面上，该第二半导体层形成在半导体衬底的一个表面的一部分上第一导电型，形成在基板表面的一部分上的第二导电类型的第二半导体层的表面上的用于电荷转移的第一导电类型的半导体层和信号输出装置。第二导电类型的第一半导体层和第二导电类型的第二半导体层以不同的步骤形成，使得第一半导体层被设置为比第二半导体层更深。

5. 发明授权

US4621291A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4621291A
公开(公告)日：1986-11-04
申请号：US462763
申请日：1983-02-01
申请人： Iwao Takemoto , Shinya Ohba , Masakazu Aoki , Haruhisa Ando , Masaaki Nakai , Toshifumi Ozaki , Takuya Imaide
发明人： Iwao Takemoto , Shinya Ohba , Masakazu Aoki , Haruhisa Ando , Masaaki Nakai , Toshifumi Ozaki , Takuya Imaide
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/365 , H04N5/372 , H04N5/374 , H04N5/378 , H04N3/14
CPC分类号： H04N3/1568
摘要： This invention relates to an area imaging device having an array of picture elements formed of photodiodes and insulated-gate MOSTs which is vertically scanned by a shift register and horizontally scanned by a charge transfer device (CTD). The solid-state imaging device according to this invention has a transfer MOST provided between a vertical signal output line and a horizontal switch MOST, a resetting MOST connected to the junction between said transfer MOST and the horizontal switch MOST, and a mechanism for setting the vertical signal line at a reference potential just before signal transfer. The transfer MOST connected between the junction of the horizontal switch MOST and the resetting MOST and the vertical signal line is a double-gate MOST formed of a series connection of a transfer gate and another transfer gate. Therefore, the charges under the gate of the transfer MOST can be removed for fixed noise to be greatly reduced.
摘要翻译：本发明涉及一种具有由光电二极管和绝缘栅极MOST形成的像素阵列的区域成像装置，其由移位寄存器垂直扫描并由电荷转移装置（CTD）水平扫描。根据本发明的固态成像装置具有设置在垂直信号输出线和水平开关MOST之间的转移MOST，连接到所述传输MOST和水平开关MOST之间的连接处的复位MOST，以及用于设置在信号传输之前的垂直信号线处于参考电位。连接在水平开关MOST和复位MOST的连接点与垂直信号线之间的传输MOST是由传输门和另一个传输门的串联连接形成的双栅极MOST。因此，为了降低固定噪声，可以去除传输MOST的栅极下的电荷。

6. 发明授权

US4532549A Solid-state imaging device with high quasi-signal sweep-out efficiency and high signal charge transfer efficiency 失效
标题翻译：具有高准信号扫频效率和高信号电荷转移效率的固态成像装置
公开(公告)号：US4532549A
公开(公告)日：1985-07-30
申请号：US473865
申请日：1983-03-10
申请人： Toshifumi Ozaki , Shinya Ohba , Iwao Takemoto , Masaaki Nakai , Haruhisa Ando , Shusaku Nagahara , Takuya Imaide , Kenji Takahashi , Toshiyuki Akiyama
发明人： Toshifumi Ozaki , Shinya Ohba , Iwao Takemoto , Masaaki Nakai , Haruhisa Ando , Shusaku Nagahara , Takuya Imaide , Kenji Takahashi , Toshiyuki Akiyama
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/365 , H04N5/369 , H04N5/372 , H04N5/374 , H04N5/378 , H04N5/30
CPC分类号： H01L27/14643
摘要： Disclosed is a solid-state imaging device wherein optical information of a number of photo-electric conversion elements arranged in a matrix is read into vertical signal lines by a vertical shift register and then the optical information on the vertical signal lines is horizontally scanned by a horizontal register of a charge transfer device. Bias charge storage means and quasi-signal sweep-out drains are disposed between the horizontal register and the vertical signal lines, and a bias charge input means is arranged in the horizontal register. In order to ensure high efficiency in transferring signals between the vertical lines to the storage means, the sweep-out drains and the charge transfer device, it is arranged for bias charges to be provided at each stage of transfer. Thus, bias charges supplied from the storage means are used to transfer charges from the vertical lines to the storage means. Similarly bias charges directly injected from the quasi-signal sweep-out drains are used to sweep out quasi-signals from the storage means to the quasi-signal sweep-out drains. Finally bias charges supplied from the bias charge input means of the charge transfer device are used to read signals from the storage means into the charge transfer device. By virtue of this, the sweep-out efficiency of the quasi-signals from the capacitances which supply the bias charges and a read-out efficiency of the signal charges are enhanced and a high quality of video signal is produced.
摘要翻译：公开了一种固态成像装置，其中以矩阵形式布置的多个光电转换元件的光学信息被垂直移位寄存器读入垂直信号线，然后垂直信号线上的光信息被水平扫描电荷转移装置的水平寄存器。偏置电荷存储装置和准信号扫除漏极设置在水平寄存器和垂直信号线之间，偏置电荷输入装置布置在水平寄存器中。为了确保在垂直线之间向存储装置，扫除漏极和电荷转移装置传输信号的高效率，布置为在每个转移阶段提供偏置电荷。因此，使用从存储装置提供的偏置电荷将电荷从垂直线传送到存储装置。类似地，从准信号扫除漏极直接注入的偏置电荷用于将准信号从存储装置扫除到准信号扫除漏极。最后，从电荷转移装置的偏置电荷输入装置提供的偏置电荷用于从存储装置读取信号到电荷转移装置中。由此，来自提供偏置电荷的电容的准信号的扫除效率和信号电荷的读出效率被增强，并且产生高质量的视频信号。

7. 发明授权

US4577231A High sensitivity solid-state imaging device 失效
标题翻译：高灵敏度固态成像装置
公开(公告)号：US4577231A
公开(公告)日：1986-03-18
申请号：US476415
申请日：1983-03-17
申请人： Shinya Ohba , Haruhisa Ando , Masaaki Nakai , Toshifumi Ozaki , Koichi Seki , Kenji Takahashi , Toshiyuki Akiyama , Iwao Takemoto , Takuya Imaide , Akihide Okuda , Masaharu Kubo
发明人： Shinya Ohba , Haruhisa Ando , Masaaki Nakai , Toshifumi Ozaki , Koichi Seki , Kenji Takahashi , Toshiyuki Akiyama , Iwao Takemoto , Takuya Imaide , Akihide Okuda , Masaharu Kubo
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/365 , H04N5/372 , H04N3/14
CPC分类号： H04N3/1512 , H01L27/14643
摘要： Disclosed is a two-dimensionally arrayed solid-state imaging device for a television camera having a photodiode array arranged at a photo-sensing section and a readout horizontal register constructed by a charge transfer device (CTD) such as a BCD, CCD or BBD. An inverter circuit is provided for each of the vertical signal lines. An input of the inverter circuit is connected to a vertical signal line drain of at least one transfer transistor arranged between the vertical signal line and the CTD, and an output of the inverter circuit is connected to a gate of the transfer transistor. Transfer efficiency is improved by the insertion of the inverter circuit and fixed pattern noise is substantially reduced by supplying bias currents.
摘要翻译：公开了一种用于电视摄像机的二维阵列固态成像装置，其具有布置在感光部分的光电二极管阵列和由诸如BCD，CCD或BBD的电荷转移装置（CTD）构成的读出水平寄存器。为每条垂直信号线提供一个反相器电路。逆变器电路的输入端连接在布置在垂直信号线和CTD之间的至少一个传输晶体管的垂直信号线漏极，反相器电路的输出端连接到转移晶体管的栅极。通过插入逆变器电路来提高转移效率，并且通过提供偏置电流大大减少固定图案噪声。

8. 发明授权

US4349743A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4349743A
公开(公告)日：1982-09-14
申请号：US206865
申请日：1980-11-14
申请人： Shinya Ohba , Shoji Hanamura , Toshifumi Ozaki , Masaharu Kubo , Masaaki Nakai , Kenji Takahashi , Masakazu Aoki , Iwao Takemoto , Haruhisa Ando , Ryuichi Izawa
发明人： Shinya Ohba , Shoji Hanamura , Toshifumi Ozaki , Masaharu Kubo , Masaaki Nakai , Kenji Takahashi , Masakazu Aoki , Iwao Takemoto , Haruhisa Ando , Ryuichi Izawa
IPC分类号： H01L27/14 , H01L27/146 , H04N3/14 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/365 , H04N5/372 , H04N5/374 , H04N5/378
CPC分类号： H01L27/14643 , H04N3/1512 , H04N3/1568
摘要： A solid-state imaging device wherein a MOS sensor is employed for a photosensor part, a CTD shift register is employed for a read-out circuit, first and second transfer gates are connected between vertical signal output lines and the CTD, and a reset gate is connected between a juncture of the first and second transfer gates and a reset voltage line. A method is adopted in which signal outputs of a plurality of rows are transferred to the CTD in a horizontal blanking period, and signals of a plurality of rows are simultaneously read out in a horizontal scanning period. At the signal transfer, bias charges are dumped into the vertical signal output lines from the CTD, and mixed charges consisting of the bias charges and signal charges are transferred to the CTD. Thereafter, the signals are read out.
摘要翻译：一种固态成像装置，其中MOS传感器用于光电传感器部分，CTD移位寄存器用于读出电路，第一和第二传输门连接在垂直信号输出线和CTD之间，复位门连接在第一和第二传输门的接合点与复位电压线之间。采用在水平消隐期间将多行的信号输出传送到CTD的方法，并且在水平扫描期间同时读出多行的信号。在信号传输中，偏置电荷从CTD倾倒到垂直信号输出线路中，由偏置电荷和信号电荷组成的混合电荷转移到CTD。此后，读出信号。

9. 发明授权

US4295055A Circuit for generating scanning pulses 失效
标题翻译：用于产生扫描脉冲的电路
公开(公告)号：US4295055A
公开(公告)日：1981-10-13
申请号：US46028
申请日：1979-06-06
申请人： Iwao Takemoto , Norio Koike , Shinya Ohba , Haruhisa Ando , Masaaki Nakai , Syoji Hanamura , Ryuichi Izawa , Masaharu Kubo , Masakazu Aoki , Shuhei Tanaka
发明人： Iwao Takemoto , Norio Koike , Shinya Ohba , Haruhisa Ando , Masaaki Nakai , Syoji Hanamura , Ryuichi Izawa , Masaharu Kubo , Masakazu Aoki , Shuhei Tanaka
IPC分类号： G11C19/00 , G11C19/18 , G11C19/28 , H01L27/146 , H01L31/10 , H03K5/15 , H04N3/14
CPC分类号： H03K5/15093 , G11C19/184 , G11C19/28
摘要： A circuit for generating scanning pulses comprising a plurality of stages of basic circuits connected in series, said each basic circuit comprising first, second and third insulated gate field-effect transistors (MISTs) each of which has first and second terminals each being either of source and drain terminals and a gate terminal, said first terminal of said first MIST being used as a clock pulse-applying terminal, said gate terminal of said first MIST being used as an input terminal, said second terminal of said first MIST and said first terminal and said gate terminal of said second MIST being connected and used as a scanning pulse output terminal, said second terminal of said second MIST and said first terminal of said third MIST being connected and used as an output terminal, said second terminal of said third MIST being used as a ground terminal, said gate terminal of said third MIST being used as a feedback input terminal.
摘要翻译：一种用于产生扫描脉冲的电路，包括串联连接的多级基本电路，所述每个基本电路包括第一，第二和第三绝缘栅极场效应晶体管（MIST），每个绝缘栅场效应晶体管的第一和第二端子均为源极所述第一MIST的所述第一端子用作时钟脉冲施加端子，所述第一MIST的所述栅极端子用作输入端子，所述第一MIST的所述第二端子和所述第一端子的所述第一端子并且所述第二MIST的所述栅极端子被连接并用作扫描脉冲输出端子，所述第二MIST的所述第二端子和所述第三MIST的所述第一端子被连接并用作输出端子，所述第三MIST的所述第二端子被用作接地端子，所述第三MIST的所述栅极端子用作反馈输入端子。

10. 发明授权

US4578707A Method of reducing vertical smears of a solid state image sensor 失效
标题翻译：降低固态图像传感器垂直涂片的方法
公开(公告)号：US4578707A
公开(公告)日：1986-03-25
申请号：US662133
申请日：1984-10-18
申请人： Naoki Ozawa , Toshiyuki Akiyama , Shuusaku Nagahara , Shinya Ohba , Haruhisa Ando , Toshifumi Ozaki
发明人： Naoki Ozawa , Toshiyuki Akiyama , Shuusaku Nagahara , Shinya Ohba , Haruhisa Ando , Toshifumi Ozaki
IPC分类号： H04N5/217 , H04N3/12
CPC分类号： H04N5/2175
摘要： Herein disclosed is a method of reducing the vertical smears which are generated in a solid state image sensor including a plurality of vertical signal lines for transferring signal charges in a vertical direction and at least one charge transfer device for transferring the signal charges in a horizontal direction.The smear charges stored in the vertical signal lines and the signal charges generated in a photoelectric conversion element in response to an incident ray are inputted separately of each other for a horizontal blanking period to the charge transfer device for the horizontal transfer. During a tracing period, a smear voltage and a signal voltage are outputted separately of each other from said charge transfer device. The smear voltage adjusted is subtracted from the signal voltage to eliminate the smear component which has been mixed into the signal voltage.
摘要翻译：这里公开了一种减少在包括用于在垂直方向上传送信号电荷的多个垂直信号线的固态图像传感器中产生的垂直涂片的方法，以及用于在水平方向上传送信号电荷的至少一个电荷转移装置。存储在垂直信号线中的拖尾电荷和在光电转换元件中产生的响应于入射光线的信号电荷在水平消隐期间彼此分开地输入到用于水平传送的电荷转移装置。在跟踪期间，污染电压和信号电压彼此分离地从所述电荷转移装置输出。从信号电压中减去调整的污迹电压，以消除已混入信号电压的污迹分量。

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