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1. 发明授权

US4809075A Solid-state imaging device having an amplifying means in the matrix arrangement of picture elements 失效
标题翻译：具有在像素的矩阵排列中的放大装置的固态成像装置
公开(公告)号：US4809075A
公开(公告)日：1989-02-28
申请号：US109319
申请日：1987-10-19
申请人： Hajime Akimoto , Toshifumi Ozaki , Shinya Ohba
发明人： Hajime Akimoto , Toshifumi Ozaki , Shinya Ohba
IPC分类号： H01L27/146 , H01L27/148 , H04N5/335 , H04N5/357 , H04N5/359 , H04N5/363 , H04N5/374 , H04N5/3745 , H04N5/378 , H04N3/14
CPC分类号： H04N5/37457 , H01L27/14818 , H01L27/14831 , H04N5/378
摘要： A solid-state imaging device is constructed by integrating a plurality of face plate elements of an imager in the shape of a matrix on a semiconductor substrate. The face plate elements are formed of photodiodes, in which charges corresponding to incident light are accumulated. The charges are converted into currents or voltages by a plurality of amplifying means disposed in the matrix and which are provided adjacent to the photodiodes. The currents or the voltages obtained through conversion are delivered out of the matrix through signal lines. To the signal lines a correlated double sampling circuit is connected, and this curcuit detects a difference in outputs of the amplifying means between a case when the charges of the photodiodes are not present in the input portions of the amplifying means and a case when they are present therein.
摘要翻译：固态成像装置通过在半导体衬底上集成成像器形状的成像器的多个面板元件而构成。面板元件由光电二极管形成，其中对应于入射光的电荷被累积。通过设置在矩阵中并与光电二极管相邻设置的多个放大装置将电荷转换成电流或电压。通过转换获得的电流或电压通过信号线传送出矩阵。对于信号线，连接相关的双采样电路，并且该电路在放大装置的输入部分中不存在光电二极管的电荷的情况与它们之间的情况下检测放大装置的输出的差异在其中存在。

2. 发明授权

US4908684A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4908684A
公开(公告)日：1990-03-13
申请号：US70552
申请日：1987-07-07
申请人： Norio Koike , Toshifumi Ozaki , Masaaki Nakai , Haruhisa Ando , Shinya Ohba , Hideyuki Ono , Hajime Akimoto , Hajime Kinugasa
发明人： Norio Koike , Toshifumi Ozaki , Masaaki Nakai , Haruhisa Ando , Shinya Ohba , Hideyuki Ono , Hajime Akimoto , Hajime Kinugasa
IPC分类号： H01L27/146 , H01L27/148
CPC分类号： H01L27/14887
摘要： A solid-state imaging device includes a vertical CCD shift register for transferring electric charge. The electrode of the vertical CCD located nearest to the substrate is extended outside of the region of the vertical CCD to a region of a layer where isolation is required. The layer is thus imparted with two functions, that is, the function of the CCD electrode and that of the iolation electrode. An overflow transistor is also provided to discharge excess charge produced by high intensity light.
摘要翻译：固态成像装置包括用于传送电荷的垂直CCD移位寄存器。位于最靠近基板的垂直CCD的电极在垂直CCD的区域的外部延伸到需要隔离的层的区域。因此，该层具有两种功能，即CCD电极和绝缘电极的功能。还提供溢流晶体管以排出由高强度光产生的过量电荷。

3. 发明授权

US4942474A Solid-state imaging device having photo-electric conversion elements and other circuit elements arranged to provide improved photo-sensitivity 失效
标题翻译：具有光电转换元件和其它电路元件的固态成像装置被布置成提供改善的光敏性
公开(公告)号：US4942474A
公开(公告)日：1990-07-17
申请号：US281220
申请日：1988-12-08
申请人： Hajime Akimoto , Shinya Ohba , Toshifumi Ozaki
发明人： Hajime Akimoto , Shinya Ohba , Toshifumi Ozaki
IPC分类号： H04N5/3745
CPC分类号： H04N3/1512
摘要： A solid-state imaging device including a plurality of photoelectric conversion elements (for example, photodiodes) arranged on a semiconductor substrate so as to form a matrix and read-out means for reading out signal charges which are stored in the photodiodes in accordance with incident light, in a predetermined order, is disclosed in which device the read-out means is made up of a plurality of active elements such as a MOS transistor connected to a photodiode, part of the active elements are used as a pixel amplifier for amplifying the signal charge of the photodiode in such a manner that the signal charge is converted into a current or voltage, the output of the pixel amplifier at a time the signal charge of the photodiode is not applied to the input part of the pixel amplifier and the output of the pixel amplifier at a time the signal charge of the photodiode is applied to the input part of the pixel amplifier are separately stored in a pair of storage means, and the outputs of a plurality of pairs of storage means are successively taken out in accordance with a scanning signal.
摘要翻译：一种固态成像装置，其包括布置在半导体衬底上的多个光电转换元件（例如，光电二极管），以形成矩阵和读出装置，用于根据事件读出存储在光电二极管中的信号电荷公开了以预定顺序的光，读出装置由多个有源元件（例如连接到光电二极管的MOS晶体管）构成，其中有源元件的一部分用作像素放大器，用于放大光电二极管的信号电荷使得信号电荷被转换为电流或电压，在光电二极管的信号电荷未被施加到像素放大器的输入部分的时间处的像素放大器的输出和输出在光电二极管的信号电荷施加到像素放大器的输入部分的时间分别存储在一对存储装置中，并且输出的像素放大器的输出根据扫描信号依次取出多对存储装置。

4. 发明授权

US4814848A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4814848A
公开(公告)日：1989-03-21
申请号：US58825
申请日：1987-06-05
申请人： Hajime Akimoto , Harushisa Ando , Toshifumi Ozaki , Hideyuki Ono , Shinya Ohba , Masaaki Nakai , Norio Koike
发明人： Hajime Akimoto , Harushisa Ando , Toshifumi Ozaki , Hideyuki Ono , Shinya Ohba , Masaaki Nakai , Norio Koike
IPC分类号： H01L27/146 , H01L27/148 , H01L29/78 , H01L27/14 , H01L29/06
CPC分类号： H01L27/14887
摘要： A solid-state imaging device having a plurality of semiconductor layers of a first conductivity type for photo-electric conversion provided on the surface of a first semiconductor layer of a second conductivity type which is formed on a part of one surface of a semiconductor substrate of the first conductivity type, a semiconductor layer of the first conductivity type for charge transfer provided on the surface of a second semiconductor layer of the second conductivity type which is formed on a part of the surface of the substrate, and a signal output means. The first semiconductor layer of the second conductivity type and the second semiconductor layer of the second conductivity type are formed in different steps so that the first semiconductor layer is disposed deeper than the second semiconductor layer.
摘要翻译：一种具有多个第一导电类型的用于光电转换的半导体层的固态成像装置，其设置在第二导电类型的第一半导体层的表面上，该第二半导体层形成在半导体衬底的一个表面的一部分上第一导电型，形成在基板表面的一部分上的第二导电类型的第二半导体层的表面上的用于电荷转移的第一导电类型的半导体层和信号输出装置。第二导电类型的第一半导体层和第二导电类型的第二半导体层以不同的步骤形成，使得第一半导体层被设置为比第二半导体层更深。

5. 发明授权

US5144447A Solid-state image array with simultaneously activated line drivers 失效
标题翻译：具有同时激活的线驱动器的固态图像阵列
公开(公告)号：US5144447A
公开(公告)日：1992-09-01
申请号：US330314
申请日：1989-03-29
申请人： Hajime Akimoto , Shinya Ohba , Mitsuyuki Mitsui
发明人： Hajime Akimoto , Shinya Ohba , Mitsuyuki Mitsui
IPC分类号： H04N5/357 , H04N5/3745
CPC分类号： H04N5/35518 , H04N3/1512 , H04N3/155
摘要： The present invention relates to an improved solid-state imaging device having pixel amplifiers. The higher definition of the device results in the increase in number of pixels as large as not less than two million. When a solid-state imaging device having such a large number of pixels is provided with pixel amplifiers, there arise various problems associated with a power source and a power supply line as well as a problem inherent to the pixel amplifier type of solid-state imaging device. The present invention provides a solid-state imaging device in which noises or the like are prevented and a picture or image quality having high definition can be obtained, by suppressing a voltage drop of the power supply line and by compensating fluctuations in outputs of the pixel amplifiers.
摘要翻译：本发明涉及具有像素放大器的改进的固态成像装置。器件的高清晰度导致像素数量的增加不少于200万像素。当具有这样大量像素的固态成像装置设置有像素放大器时，会出现与电源和电源线相关的各种问题以及像素放大器类型的固态成像固有的问题设备。本发明提供一种通过抑制电源线的电压降和补偿像素的输出的波动来防止噪声等的固态成像装置，并且可以获得具有高清晰度的图像或图像质量放大器

6. 发明授权

US5016108A Solid-state imaging device having series-connected pairs of switching MOS transistors for transferring signal electric charges therethrough 失效
标题翻译：固态成像装置具有串联连接的开关MOS晶体管对，用于传送信号电荷
公开(公告)号：US5016108A
公开(公告)日：1991-05-14
申请号：US214514
申请日：1988-07-01
申请人： Hajime Akimoto , Shinya Ohba
发明人： Hajime Akimoto , Shinya Ohba
IPC分类号： H01L27/146
CPC分类号： H01L27/14643
摘要： A solid-state imaging device has a plurality of light receiving elements formed in a semiconductor substrate. Signal electric charges generated by light incident upon the light receiving elements and stored in the individual light receiving elements are sequentially read out through signal lines by scanning a plurality of switches. Each of the switches includes a series connection of a first MOS transistor switching element formed in the semiconductor substrate and a second MOS transistor formed in a semiconductor provided above the semiconductor substrate through an insulator. The first switching element is disposed on the side of the light receiving element and the second switching element is disposed on the side of the signal output terminal.
摘要翻译：固态成像装置具有形成在半导体衬底中的多个光接收元件。通过扫描多个开关，通过信号线顺序读出入射在光接收元件上并存储在各个光接收元件中的光产生的信号电荷。每个开关包括通过绝缘体形成在半导体衬底中形成的第一MOS晶体管开关元件和形成在半导体衬底之上的半导体中的第二MOS晶体管的串联连接。第一开关元件设置在光接收元件的侧面上，第二开关元件设置在信号输出端子的一侧。

7. 发明授权

US4954895A Solid-state imaging device including photoelectric conversion elements integrated at a surface of a semiconductor substrate 失效
标题翻译：固态成像装置，其包括集成在半导体基板的表面的光电转换元件
公开(公告)号：US4954895A
公开(公告)日：1990-09-04
申请号：US278844
申请日：1988-12-02
申请人： Hajime Akimoto , Shinya Ohba
发明人： Hajime Akimoto , Shinya Ohba
IPC分类号： H01L27/00 , H01L27/146 , H04N5/335 , H04N5/365 , H04N5/369 , H04N5/374
CPC分类号： H01L27/14643
摘要： A solid-state imaging device has a plurality of photodiodes (photoelectric conversion elements) formed in a surface of a semiconductor substrate in a matrix configuration and reading means for reading out signal charges stored in the photodiodes in accordance with the incident lights in a predetermined order. This reading means includes active elements, such as MOS type transistors, connected to each of the photodiodes. A MOS type transistor constituting part of theses active elements is provided in the path of the transmitting incident light for the associated photodiode. By this configuration, the area occupied by one picture element is reduced as far as the processing steps allow.
摘要翻译：固态成像装置具有以矩阵形式形成在半导体衬底的表面中的多个光电二极管（光电转换元件）和用于按照预定顺序根据入射光读出存储在光电二极管中的信号电荷的读取装置。该读取装置包括连接到每个光电二极管的有源元件，例如MOS型晶体管。构成这些有源元件的一部分的MOS型晶体管设置在用于相关光电二极管的透射入射光的路径中。通过该配置，只要处理步骤允许，就减少一个图像元素所占据的面积。

8. 发明授权

US5063581A Semiconductor imaging device having a plurality of photodiodes and charge coupled devices 失效
标题翻译：具有多个光电二极管和电荷耦合器件的半导体成像器件
公开(公告)号：US5063581A
公开(公告)日：1991-11-05
申请号：US557699
申请日：1990-07-25
申请人： Hajime Akimoto , Toshifumi Ozaki , Kazuya Tokumasu , Hideyuki Ono , Haruhiko Tanaka
发明人： Hajime Akimoto , Toshifumi Ozaki , Kazuya Tokumasu , Hideyuki Ono , Haruhiko Tanaka
IPC分类号： H01L21/339 , H01L27/148 , H01L29/762 , H04N5/335 , H04N5/361 , H04N5/369 , H04N5/3728
CPC分类号： H01L27/14831
摘要： The semiconductor device having both vertically arranged CCDs and a horizontal CCD, such as, in connection with a solid state image pickup device, is provided with a horizontal CCD in which the transfer speed and the transfer efficiency of a horizontal CCD thereof is improved substantially. In such a device, a plurality of photodiodes are provided on a semiconductor substrate, vertical CCDs are provided on the semiconductor substrate for transferring signal charges of the photodiodes and a horizontal CCD is provided on the semiconductor substrate for transferring signal charges received from the vertical CCDs. The vertical and horizontal CCDs of such a semiconductor device are formed in a well structure provided on the substrate such that the depletion region extending from the channel of the horizontal CCD and a depletion region produced between the underlying substrate and the well are configured to meet each other under each of the transfer electrodes of the horizontal CCD. The depletion region extending from a channel of the vertical CCDs and the depletion region produced between the underlying substrate and the well, however, do not meet each other under each of the transfer electrodes thereof.
摘要翻译：具有垂直配置的CCD和水平CCD的半导体器件（例如与固态图像拾取器件相关联）设置有水平CCD，其中水平CCD的传输速度和传输效率基本上得到改善。在这种器件中，在半导体衬底上设置多个光电二极管，在半导体衬底上设置垂直CCD以转移光电二极管的信号电荷，并且在半导体衬底上设置水平CCD以传送从垂直CCDs接收的信号电荷。这样的半导体器件的垂直和水平CCD形成在设置在衬底上的阱结构中，使得从水平CCD的沟道延伸的耗尽区域和在下面的衬底和阱之间产生的耗尽区被配置为满足每个在水平CCD的每个转移电极下方。然而，从垂直CCD的通道延伸的耗尽区域和在下面的衬底和阱之间产生的耗尽区域在其每个转移电极之间不相互满足。

9. 发明授权

US08743155B2 Circuit and driving method for correcting tone output of a pixel 有权
标题翻译：用于校正像素的色调输出的电路和驱动方法
公开(公告)号：US08743155B2
公开(公告)日：2014-06-03
申请号：US12849136
申请日：2010-08-03
申请人： Masato Ishii , Naruhiko Kasai , Hajime Akimoto
发明人： Masato Ishii , Naruhiko Kasai , Hajime Akimoto
IPC分类号： G09G5/10 , G09G3/36
CPC分类号： G09G3/3208 , G09G3/2092 , G09G2310/0275 , G09G2320/0233 , G09G2320/0242 , G09G2320/0271 , G09G2320/0276 , G09G2320/0285 , G09G2320/0295 , G09G2320/043 , G09G2320/0693 , G09G2360/16
摘要： A display device capable of correcting display of deteriorated pixels without causing a nonconstant tonality or improper color balance is provided. The display device includes a display section with plural pixels; signal lines; a data generation circuit; a D/A converter for sequentially converting a tone data to an analog voltage and outputting the analog voltage to the signal lines; a switch circuit for outputting a signal corresponding to the pixel state by switching the signal lines; an A/D converter for sequentially detecting the signal; and a detection circuit for estimating the state of the pixel from the signal. The D/A converter includes an output range setting means for setting an allowed output range of the analog voltage. The display device includes an output correction circuit that controls the output range setting means in accordance with the state of the pixel detected by the detection circuit.
摘要翻译：提供能够校正恶化像素的显示而不引起不均匀色调或不正确色彩平衡的显示装置。显示装置包括具有多个像素的显示部分; 信号线数据生成电路; D / A转换器，用于将音调数据顺序地转换为模拟电压并将模拟电压输出到信号线; 开关电路，用于通过切换信号线来输出与像素状态对应的信号; 用于顺序地检测信号的A / D转换器; 以及检测电路，用于根据该信号估计像素的状态。 D / A转换器包括用于设置模拟电压的允许输出范围的输出范围设置装置。显示装置包括输出校正电路，其根据由检测电路检测的像素的状态来控制输出范围设定装置。

10. 发明授权

US08610646B2 Organic electroluminescence display device 有权
公开(公告)号：US08610646B2
公开(公告)日：2013-12-17
申请号：US12318852
申请日：2009-01-09
申请人： Tohru Kohno , Hajime Akimoto , Naruhiko Kasai , Masato Ishii
发明人： Tohru Kohno , Hajime Akimoto , Naruhiko Kasai , Masato Ishii
IPC分类号： G09G3/30
CPC分类号： G09G3/3233 , G09G2300/0814 , G09G2320/0295 , G09G2320/041 , G09G2320/045 , G09G2320/046
摘要： An organic electroluminescence display device is provided having a display section including a plurality of pixels arranged in a matrix; and a detection section for detecting a luminance characteristic of an OLED element in each of the pixels. The detection section includes a first path for allowing a detected characteristic value to pass therethrough and a second path for attenuating the detected characteristic value. A first switch is provided for the first path whereas a second switch is provided for the second path, the second switch being opened when the first switch is closed. The detected characteristic value having passed through any one of the first path and the second path is input to a same analog-to-digital converter to be converted into a digital quantity.

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