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    • 5. 发明授权
    • Semiconductor imaging device having a plurality of photodiodes and
charge coupled devices
    • 具有多个光电二极管和电荷耦合器件的半导体成像器件
    • US5063581A
    • 1991-11-05
    • US557699
    • 1990-07-25
    • Hajime AkimotoToshifumi OzakiKazuya TokumasuHideyuki OnoHaruhiko Tanaka
    • Hajime AkimotoToshifumi OzakiKazuya TokumasuHideyuki OnoHaruhiko Tanaka
    • H01L21/339H01L27/148H01L29/762H04N5/335H04N5/361H04N5/369H04N5/3728
    • H01L27/14831
    • The semiconductor device having both vertically arranged CCDs and a horizontal CCD, such as, in connection with a solid state image pickup device, is provided with a horizontal CCD in which the transfer speed and the transfer efficiency of a horizontal CCD thereof is improved substantially. In such a device, a plurality of photodiodes are provided on a semiconductor substrate, vertical CCDs are provided on the semiconductor substrate for transferring signal charges of the photodiodes and a horizontal CCD is provided on the semiconductor substrate for transferring signal charges received from the vertical CCDs. The vertical and horizontal CCDs of such a semiconductor device are formed in a well structure provided on the substrate such that the depletion region extending from the channel of the horizontal CCD and a depletion region produced between the underlying substrate and the well are configured to meet each other under each of the transfer electrodes of the horizontal CCD. The depletion region extending from a channel of the vertical CCDs and the depletion region produced between the underlying substrate and the well, however, do not meet each other under each of the transfer electrodes thereof.
    • 具有垂直配置的CCD和水平CCD的半导体器件(例如与固态图像拾取器件相关联)设置有水平CCD,其中水平CCD的传输速度和传输效率基本上得到改善。 在这种器件中,在半导体衬底上设置多个光电二极管,在半导体衬底上设置垂直CCD以转移光电二极管的信号电荷,并且在半导体衬底上设置水平CCD以传送从垂直CCDs接收的信号电荷 。 这样的半导体器件的垂直和水平CCD形成在设置在衬底上的阱结构中,使得从水平CCD的沟道延伸的耗尽区域和在下面的衬底和阱之间产生的耗尽区被配置为满足每个 在水平CCD的每个转移电极下方。 然而,从垂直CCD的通道延伸的耗尽区域和在下面的衬底和阱之间产生的耗尽区域在其每个转移电极之间不相互满足。
    • 9. 发明授权
    • Gate protection diode for high-frequency power amplifier
    • 门极保护二极管用于高频功率放大器
    • US07932562B2
    • 2011-04-26
    • US12251790
    • 2008-10-15
    • Hideyuki OnoTetsuya Iida
    • Hideyuki OnoTetsuya Iida
    • H01L27/06
    • H01L27/0629H01L27/0255H01L29/0692H01L29/4175H01L29/66121H01L29/66659H01L29/7835H01L29/861H01L29/8611H03F1/523H03F3/195H03F2200/444
    • A high-frequency power amplifier of the type to be mounted in an RF module for mobile phones having high-frequency power field effect transistors and gate protective diodes which are coupled between the gates and the sources of the high-frequency power field effect transistors. The gate protective diodes have an n type region formed over the main surface of a p type epitaxial layer, a first p type region formed at the center of the main surface of the n type region, a second p type region formed over the main surface of the epitaxial layer around the n type region from the periphery of the main surface of the n type region, and p+ type buried layers for coupling the second p type region to a substrate body. The distance between the end portions of the p+ type buried layers and the n+ type region is 7 μm or more.
    • 一种高频功率放大器,其类型安装在具有高频功率场效应晶体管和栅极保护二极管的手机的RF模块中,高频功率场效应晶体管和栅极保护二极管耦合在高频功率场效应晶体管的栅极和源极之间。 栅极保护二极管具有形成在p型外延层的主表面上的n型区域,形成在n型区域的主表面中心的第一p型区域,形成在n型区域的主表面上的第二p型区域 从n型区域的主表面周围的n型区域周围的外延层和用于将第二p型区域耦合到衬底本体的p +型掩埋层。 p +型掩埋层的端部与n +型区域之间的距离为7μm以上。