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1. 发明专利

JP2012069691A Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2012069691A
公开(公告)日：2012-04-05
申请号：JP2010212558
申请日：2010-09-22
申请人： Toshiba Corp , 株式会社東芝
发明人： IGUCHI TOMOHIRO , HIGUCHI KAZUTO , TOJO HIROSHI , HONNA MASARU , TSUKAMOTO TEPPEI , KITAMURA TOKUHIDE
IPC分类号： H01L21/60 , H01L21/3205 , H01L23/52
CPC分类号： H01L2224/05644 , H01L2224/45 , H01L2224/45147 , H01L2224/48 , H01L2224/48463 , H01L2224/48844 , H01L2924/01005 , H01L2924/01006 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of being efficiently manufactured with regard to bonding using a Cu wire, and to provide a method of manufacturing the same.SOLUTION: A semiconductor device comprises: a Cu electrode pad 3 formed on a substrate 2; an Au metal layer 4 provided so as to cover the electrode pad 3; and a Cu wire 5 bonded on the metal layer 4.
摘要翻译：要解决的问题：提供一种能够使用Cu线进行接合而能够有效地制造的半导体器件，并提供其制造方法。解决方案：半导体器件包括：形成在衬底2上的Cu电极焊盘3; 设置为覆盖电极焊盘3的Au金属层4; 以及结合在金属层4上的Cu线5.版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2009224601A Ultrasonic wave bonding apparatus, and method of manufacturing semiconductor apparatus using the same 审中-公开
标题翻译：超声波接合装置及使用其制造半导体装置的方法
公开(公告)号：JP2009224601A
公开(公告)日：2009-10-01
申请号：JP2008068205
申请日：2008-03-17
申请人： Toshiba Corp , 株式会社東芝
发明人： IGUCHI TOMOHIRO , NISHIUCHI HIDEO , KITANI TOMOYUKI , AIZAWA TAKAHIRO , TOJO HIROSHI , OISHI MASAKO
IPC分类号： H01L21/607
CPC分类号： H01L2224/37124 , H01L2224/40 , H01L2224/40245 , H01L2224/77 , H01L2224/84205 , H01L2924/00014 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide an ultrasonic wave bonding apparatus capable of improving productivity and production efficiency, and to provide a method of manufacturing a semiconductor apparatus, using this ultrasonic wave bonding apparatus. SOLUTION: The ultrasonic wave bonding apparatus has: an ultrasonic wave vibration generator 21 generating ultrasonic wave vibration; a bar-shaped ultrasonic wave horn 22 to which the ultrasonic wave vibration is propagated from the ultrasonic wave vibration generator 21; and an application block 23 which is attached to the ultrasonic wave horn 22 and has an application surface to be brought into contact with a bonding target 3. A plurality of convex parts 26, grasping the bonding target 3, is provided to the application surface, and a value indicating the height from the application surface of the convex parts 26 to the head is smaller than the value indicating the thickness of the bonding target 3. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种能够提高生产率和生产效率的超声波接合装置，并提供使用该超声波接合装置的半导体装置的制造方法。解决方案：超声波接合装置具有：产生超声波振动的超声波振动发生器21; 从超声波振动发生器21传播超声波振动的棒状超声波波峰22; 以及安装在超声波波峰22上并且具有与接合目标3接触的施加面的施加块23.在施加面上设置有夹持接合目标3的多个凸部26，并且表示从凸部26的涂布面到头部的高度的值小于表示接合目标3的厚度的值。（C）2010，JPO＆INPIT

3. 发明专利

JP2008252058A Semiconductor device and method of manufacturing same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2008252058A
公开(公告)日：2008-10-16
申请号：JP2007245852
申请日：2007-09-21
申请人： Toshiba Corp , 株式会社東芝
发明人： TOJO HIROSHI , KITANI TOMOYUKI , IGUCHI TOMOHIRO , HIRAHARA MASAKO , NISHIUCHI HIDEO
IPC分类号： H01L23/48
CPC分类号： H01L2224/48091 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a structure employing no bonding wire, the semiconductor device adapted to enable improving electrical characteristics, while ensuring high reliability and also enhancing production yield to improve the productivity, and to provide a method of manufacturing the semiconductor device. SOLUTION: The semiconductor device includes a semiconductor chip 5, having a first electrode 5a1 of a semiconductor component arranged on a first surface 5a and a second electrode 5b1 of a semiconductor component arranged on a second surface 5b opposite to the first surface 5a; a first conductive member 6a connected to the first surface 5a; a second conductive member 6b, connected to the second surface 5b; a first external electrode 2a connected to the first conductive member 6a and having a connection area larger than the first conductive member 6a; a second external electrode 2b, connected to the second conductive member 6b and having a connection area larger than the second conductive member 6b; and sealing materials 3 for sealing the semiconductor chip 5 and the conductive members 6, in between the first and second external electrodes 2b, 2b by melting through heating and hardening. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种具有不使用接合线的结构的半导体器件，该半导体器件适于提高电气特性，同时确保高可靠性并且还提高生产率以提高生产率，并提供一种制造半导体器件的方法。解决方案：半导体器件包括半导体芯片5，其具有布置在第一表面5a上的半导体部件的第一电极5a1和布置在与第一表面5a相对的第二表面5b上的半导体部件的第二电极5b1 ; 连接到第一表面5a的第一导电构件6a; 连接到第二表面5b的第二导电构件6b; 连接到第一导电构件6a并且具有大于第一导电构件6a的连接区域的第一外部电极2a; 连接到第二导电构件6b并且具有大于第二导电构件6b的连接区域的第二外部电极2b; 以及用于通过加热和硬化熔化来密封第一和第二外部电极2b，2b之间的半导体芯片5和导电构件6的密封材料3。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2007319876A Ultrasonic bonding device, and semi-conductor device manufacturing method 审中-公开
标题翻译：超声波接合装置及半导体装置的制造方法
公开(公告)号：JP2007319876A
公开(公告)日：2007-12-13
申请号：JP2006150612
申请日：2006-05-30
申请人： Toshiba Corp , 株式会社東芝
发明人： TOJO HIROSHI , AIZAWA TAKAHIRO , KITANI TOMOYUKI , NISHIUCHI HIDEO
IPC分类号： B23K20/10 , B23K101/42 , H01L21/60 , H01L21/607
摘要： PROBLEM TO BE SOLVED: To change a component corresponding to a worn application unit at low cost when the application unit for applying ultrasonic waves in an ultrasonic bonding device is worn. SOLUTION: The ultrasonic bonding device comprises an ultrasonic horn 12 in which the ultrasonic vibration is propagated from an ultrasonic vibration generation unit, a mounting recessed part 15 formed in the ultrasonic horn 12 and having a tapered side wall surface 15a at least in a part thereof, an application block 13 having an insertion head part 19 having a truncated conical shape, a shaft part 20 extending from the insertion head part 19, and an application unit 21 formed on a fore end side of the shaft part 20 and abutted on an object 3 to be joined, a female screw part 16 formed on a part opposite to the circumference of the shaft part 20 when the insertion head part 19 is inserted in the mounting recessed part 15, and a fixing member 13 having a pass-through hole part 25 for passing the shaft part 20 therethrough, a male screw part 26 to be screwed to the female screw part 16, and a pressing part 28 to press the insertion head part 19 against the side wall surface 15a of the mounting recessed part 15. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：当在超声波接合装置中施加超声波的施加单元被磨损时，以低成本改变与磨损的应用单元相对应的部件。解决方案：超声波接合装置包括超声波喇叭12，其中超声波振动从超声波振动发生单元传播，安装凹部15形成在超声波喇叭12中，并且具有锥形侧壁表面15a至少在其一部分具有具有截头圆锥形状的插入头部19，从插入头部19延伸的轴部20和形成在轴部20的前端侧的施加单元21，并且抵接在要被接合的物体3上，当插入头部19插入到安装凹部15中时，形成在与轴部20的圆周相对的部分上的阴螺纹部16以及具有通孔的固定构件13，用于使轴部20穿过的通孔部25，与螺纹部16螺合的阳螺纹部26，以及将插入头部19压靠在内螺纹部16的侧壁面15a上的按压部28。安装凹部15.版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2011159761A Surface mounting diode and method of manufacturing the same 有权
标题翻译：表面安装二极管及其制造方法
公开(公告)号：JP2011159761A
公开(公告)日：2011-08-18
申请号：JP2010019681
申请日：2010-01-29
申请人： Toshiba Corp , 株式会社東芝
发明人： KITANI TOMOYUKI , TOJO HIROSHI , ATAGI TAKAO , HIGUCHI KAZUTO , IGUCHI TOMOHIRO , FUKUMITSU MASAKO , OBATA SUSUMU , ASANO YUSAKU
IPC分类号： H01L21/329 , H01L23/48 , H01L29/861
CPC分类号： H01L21/782 , H01L23/48 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device, the polarities of which can be identified easily by appearance without causing tombstone, and to provide a method of manufacturing the semiconductor device. SOLUTION: A surface mounting diode includes: a diode chip 2 having a first main surface A1 and a second main surface A2 that face with each other; a cathode electrode 3 having an internal electrode part 3a provided on the first main surface A1 and an external electrode part 3b provided on a surface of the internal electrode part 3a; an anode electrode 4 having an internal electrode part 4a provided on a surface of the second main surface A2 and an external electrode part 4b provided on a surface of the internal electrode part 4a, wherein a thickness of the external electrode part 4b is the same as that of the external electrode part 3b of the cathode electrode; a first coating member 5 coating a peripheral surface of the internal electrode part 3a of one of either the cathode electrode and the anode electrode and a peripheral surface of the diode chip 2; and a second coating member 6 coating a peripheral surface of the internal electrode part 4a of the other of the cathode electrode and the anode electrode and having a color different from that of the first coating member 5. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以通过外观容易地识别其极性而不产生墓碑的半导体器件，并提供一种半导体器件的制造方法。解决方案：表面安装二极管包括：具有彼此面对的第一主表面A1和第二主表面A2的二极管芯片2; 设置在第一主面A1上的内部电极部分3a和设置在内部电极部分3a的表面上的外部电极部分3b的阴极电极3; 设置在第二主面A2的表面上的内部电极部分4a和设置在内部电极部分4a的表面上的外部电极部分4b的阳极电极4，其中外部电极部分4b的厚度与阴极电极的外部电极部分3b; 涂覆阴极电极和阳极电极之一的内部电极部分3a的外周表面和二极管芯片2的外围表面的第一涂覆部件5; 以及第二涂覆部件6，其涂覆阴极电极和阳极电极中的另一个的内部电极部分4a的周面，并且具有与第一涂覆部件5不同的颜色。版权所有（C）2011 ，JPO＆INPIT

6. 发明专利

JP2011066346A Semiconductor device and method of manufacturing semiconductor device 审中-公开
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：JP2011066346A
公开(公告)日：2011-03-31
申请号：JP2009217884
申请日：2009-09-18
申请人： Toshiba Corp , 株式会社東芝
发明人： IGUCHI TOMOHIRO , HIGUCHI KAZUTO , KITANI TOMOYUKI , NISHIUCHI HIDEO , FUKUMITSU MASAKO , TOJO HIROSHI , KATO KYOKO
IPC分类号： H01L23/12
CPC分类号： H01L2224/34 , H01L2224/37599 , H01L2224/37647 , H01L2224/8385 , H01L2924/00014 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the semiconductor device, in which further reduction in size of the device and reduction of internal resistance are attained while the effects of manufacturing at low cost and improvement of manufacturing efficiency are maintained. SOLUTION: A semiconductor device comprises: a semiconductor element 2; a first wiring layer 3 connected with a first electrode 2a on a side of a first surface A1; a second wiring layer 4 connected with a second electrode 2b at a side of a second surface A2; an insulating layer 5 provided around the semiconductor element 2 excluding the first surface A1 and the second surface A2; a through-hole 6 passing through the side of the first surface A1 and the side of the second surface A2 in the insulating layer 5; a third wiring layer 7 provided at the side of the first surface A1 and connected with the second wiring layer 4; external electrodes 8 provided on the first wiring layer 3 and the third wiring layer 7 respectively; and an enclosure 9 sealing the side of the second surface A2 including the second wiring layer 4 and sealing the periphery of the external electrodes 8 excluding an area exposed at the side of the first surface A1, the semiconductor element 2, the first wiring layer 3, and the third wiring layer 7. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：将要解决的问题：提供一种半导体器件和半导体器件的制造方法，其中，在制造成本低且制造性能提高的同时，实现器件尺寸的进一步减小和内阻的降低保持效率。解决方案：半导体器件包括：半导体元件2; 与第一面A1一侧的第一电极2a连接的第一布线层3; 与第二表面A2侧的第二电极2b连接的第二布线层4; 设置在除了第一面A1和第二面A2之外的半导体元件2周围的绝缘层5; 穿过绝缘层5中的第一表面A1侧和第二表面A2侧的通孔6; 设置在第一表面A1侧并与第二布线层4连接的第三布线层7; 设置在第一布线层3和第三布线层7上的外部电极8; 以及密封包括第二布线层4的第二表面A2的侧面并且密封外部电极8的外围的外壳9，除了暴露在第一表面A1，半导体元件2，第一布线层3 ，和第三布线层7.版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2010123680A Semiconductor device, connection conductor, and method of manufacturing semiconductor device 审中-公开
标题翻译：半导体器件，连接导体及制造半导体器件的方法
公开(公告)号：JP2010123680A
公开(公告)日：2010-06-03
申请号：JP2008294673
申请日：2008-11-18
申请人： Toshiba Corp , 株式会社東芝
发明人： NISHIUCHI HIDEO , KITANI TOMOYUKI , IGUCHI TOMOHIRO , AIZAWA TAKAHIRO , OISHI MASAKO , TOJO HIROSHI
IPC分类号： H01L23/48 , H01L21/60
CPC分类号： H01L2224/35 , H01L2224/37 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/40 , H01L2224/40091 , H01L2224/40245 , H01L2224/40247 , H01L2224/83801 , H01L2224/84 , H01L2224/84205 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device reducing package loss by reducing electric resistance in a conduction state and reducing manufacturing man-hours, to provide a connection conductor, and to provide a method of manufacturing the semiconductor device. SOLUTION: This semiconductor device 1 includes: a lead frame 20 having drain terminals 12, a source terminal 13 and a gate terminal 14; a semiconductor chip 10 arranged on the lead frame 20, having a drain electrode 15c on one surface on the lead frame 20 side, and having a source electrode 15a and a gate electrode 15b on the other surface; and a plate-like connection conductor 16 where a conductive strip-like conduction part 16a for a source extending in a first direction, and having one end side connected to the source terminal 13 and the other end side connected to the source electrode 15a, and a strip-like conductive conduction part 16b for a gate extending in the first direction, and having one end side connected to the gate terminal 14, and the other end side connected to the gate electrode 15b are integrally formed by being arranged side by side in a second direction intersecting the first direction while interposing an insulation part 16c therebetween. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种半导体器件，通过降低导通状态下的电阻和减少制造工时来减小封装损耗，提供连接导体，并提供制造半导体器件的方法。解决方案：该半导体器件1包括：具有漏极端子12的引线框架20，源极端子13和栅极端子14; 布置在引线框架20上的半导体芯片10，在引线框架20侧的一个表面上具有漏电极15c，并且在另一个表面上具有源电极15a和栅极电极15b; 以及板状连接导体16，其中用于沿第一方向延伸的源极的导电条状导电部分16a，其一端侧连接到源极端子13，另一端侧连接到源极电极15a，以及用于在第一方向延伸的栅极的带状导电部分16b，并且具有连接到栅极端子14的一端侧，与栅极电极15b连接的另一端侧通过并排布置而一体地形成，与第一方向相交的第二方向，同时在其间插入绝缘部分16c。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2010062316A Semiconductor device and method for manufacturing the semiconductor device 有权
标题翻译：用于制造半导体器件的半导体器件和方法
公开(公告)号：JP2010062316A
公开(公告)日：2010-03-18
申请号：JP2008226236
申请日：2008-09-03
申请人： Toshiba Corp , 株式会社東芝
发明人： TOJO HIROSHI , KITANI TOMOYUKI , IGUCHI TOMOHIRO , AIZAWA TAKAHIRO , NISHIUCHI HIDEO , OISHI MASAKO
IPC分类号： H01L23/48 , H01L21/301 , H01L21/56
CPC分类号： H01L21/561 , H01L23/3107 , H01L24/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/181 , H01L2924/19041 , H01L2924/3025 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a structure of not using a bonding wire, thereby enhancing an electric characteristic while securing the reliability, and improved in productivity by reducing a manufacturing time, and also to provide a method for manufacturing the same. SOLUTION: The semiconductor device includes: a semiconductor chip 5 in which a first electrode 5a1 of a semiconductor element is arranged on a first surface 5a, and a second electrode 5b1 of the semiconductor element is arranged on a second surface 5b opposing to the first surface 5a; a sealer 3 which is molten and hardened by heating the semiconductor chip 5 for sealing, and is provided with a first hole 3a1 and a second hole 3b1 so as to expose regions of the first electrode 5a1 and the second electrode 5b1; a first conductive member 2a connected to the first surface 5a of the semiconductor chip 5 through the first hole 3a1; a second conductive member 2b connected to the second surface 5b of the semiconductor chip 5 through the second hole 3b1; and a plating film 4 coating five faces which do not come into contact with the sealers 3 of the first conductive member 2a and the second conductive member 2b. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有不使用接合线的结构的半导体器件，从而在确保可靠性的同时提高电特性，并且通过缩短制造时间来提高生产率，并且还提供一种方法制造相同。解决方案：半导体器件包括：半导体芯片5，其中半导体元件的第一电极5a1布置在第一表面5a上，半导体元件的第二电极5b1布置在与半导体元件相对的第二表面5b上第一表面5a; 通过加热用于密封的半导体芯片5熔融和硬化的密封件3，并且设置有第一孔3a1和第二孔3b1，以暴露第一电极5a1和第二电极5b1的区域; 通过第一孔3a1连接到半导体芯片5的第一表面5a的第一导电构件2a; 通过第二孔3b1连接到半导体芯片5的第二表面5b的第二导电构件2b; 以及涂覆不与第一导电部件2a和第二导电部件2b的密封件3接触的五个面的镀膜4。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2010056517A Semiconductor apparatus and method for manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：JP2010056517A
公开(公告)日：2010-03-11
申请号：JP2009058708
申请日：2009-03-11
申请人： Toshiba Corp , 株式会社東芝
发明人： ATAGI TAKAO , KITANI TOMOYUKI , TOJO HIROSHI , SUGA KENTARO
IPC分类号： H01L23/48
CPC分类号： H01L23/051 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/32 , H01L24/94 , H01L2221/68327 , H01L2221/68372 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/94 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/12042 , H01L2924/15747 , H01L2924/181 , H01L2224/03 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor apparatus for decreasing the size of the apparatus as a whole and reducing material cost and production cost, and a method for manufacturing the same. SOLUTION: To provide the semiconductor apparatus includes: a semiconductor device 11 which includes electrodes on front and back surfaces respectively; a first external electrode 12; a second external electrode 13; and an insulator 17. The first external electrode includes a first main surface substantially in parallel with the surface of semiconductor device, a first side face substantially perpendicular to the first main surface and a projection 12a projected in a direction vertical to the first main surface and connected with the electrode on the front surface. The second external electrode includes a second main surface substantially in parallel with the back surface, and a second side face substantially perpendicular to the second main surface, and are connected with the electrode on the back surface of the semiconductor device. The insulator covers the semiconductor device and the projection. The first side face and the second side face are used as mount surfaces, and the semiconductor device is arranged between the first external electrode and the second external electrode. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种用于整体减小设备尺寸并降低材料成本和生产成本的半导体装置及其制造方法。解决方案：提供半导体器件包括：半导体器件11，其分别包括前表面和后表面上的电极; 第一外部电极12; 第二外部电极13; 第一外部电极包括与半导体器件的表面大致平行的第一主表面，基本上垂直于第一主表面的第一侧面和沿垂直于第一主表面的方向突出的突起12a，以及与前表面上的电极连接。第二外部电极包括基本上与背面平行的第二主表面和与第二主表面基本垂直的第二侧面，并且与半导体器件的背面上的电极连接。绝缘体覆盖半导体器件和投影。第一侧面和第二侧面用作安装表面，并且半导体器件布置在第一外部电极和第二外部电极之间。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2013219324A Semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：JP2013219324A
公开(公告)日：2013-10-24
申请号：JP2013006553
申请日：2013-01-17
申请人： Toshiba Corp , 株式会社東芝
发明人： TOJO HIROSHI , HIGUCHI KAZUTO , IGUCHI TOMOHIRO , FUKUMITSU MASAKO , HIRATSUKA DAISUKE , SASAKI AKIHIRO , UCHIDA MASAYUKI
IPC分类号： H01L23/12 , H01L23/48
CPC分类号： H01L23/4952 , H01L21/50 , H01L23/051 , H01L23/49844 , H01L23/5389 , H01L24/19 , H01L24/20 , H01L24/97 , H01L2224/04105 , H01L2224/24137 , H01L2224/2518 , H01L2224/45124 , H01L2924/00014 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/15787 , H01L2924/181 , H01L2924/00 , H01L2224/48
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having high connection reliability and high mounting property, and a method for manufacturing a semiconductor device.SOLUTION: A semiconductor device of an embodiment includes a chip having a first chip electrode on a first surface of one side and a second chip electrode on a second surface of the other side, a conductive frame of conductivity arranged at a side periphery of the chip, an insulation side part provided between the conductive frame and the side periphery of the chip, and a re-wiring for electrically connecting the second chip electrode and the conductive frame in the other side of the chip.
摘要翻译：要解决的问题：提供具有高连接可靠性和高安装性能的半导体器件及其半导体器件的制造方法。一种实施方式的半导体器件包括在第一表面上具有第一芯片电极的芯片在另一侧的第二表面上具有导电性框架，设置在芯片的侧面的导电性框架，设置在导体框架与芯片侧面之间的绝缘侧部，用于将第二芯片电极和芯片的另一侧中的导电框架电连接的布线。

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