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1. 发明专利

JP2013084889A Semiconductor light-emitting device and method of manufacturing the same 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：JP2013084889A
公开(公告)日：2013-05-09
申请号：JP2012078364
申请日：2012-03-29
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKAYAMA TOSHIYA , HIGUCHI KAZUTO , KOIZUMI HIROSHI , NISHIUCHI HIDEO , OBATA SUSUMU , KIMURA AKIYA , SUGIZAKI YOSHIAKI , KOJIMA AKIHIRO , AKIMOTO YOSUKE
IPC分类号： H01L33/52 , H01L23/29 , H01L23/31 , H01L33/50
CPC分类号： H01L33/56 , H01L27/15 , H01L33/502 , H01L33/505 , H01L33/508 , H01L33/54 , H01L2933/0041
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device that allows improving the yield and to provide a method of manufacturing the same.SOLUTION: A semiconductor light-emitting device includes: a light-emitting part 2 that emits light; a wavelength conversion part 8 that is provided on one primary surface M1 of the light-emitting part 2 and contains a fluorescent material; and a transparent resin part 9 that is provided on the wavelength conversion part 8. At least one of the values of the elastic modulus and the Shore hardness of the transparent resin part 9 is higher than one of the values of the wavelength conversion part 8.
摘要翻译：解决的问题：提供一种允许提高产率并提供其制造方法的半导体发光器件。解决方案：半导体发光器件包括：发光部的发光部2; 波长转换部8，其设置在发光部2的一个主面M1上并含有荧光体; 以及设置在波长转换部8上的透明树脂部9.透明树脂部9的弹性模量和肖氏硬度的值中的至少一个高于波长转换部8的值之一。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2011258673A Semiconductor light-emitting device and method of manufacturing the same 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：JP2011258673A
公开(公告)日：2011-12-22
申请号：JP2010130521
申请日：2010-06-07
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKAYAMA TOSHIYA , OBATA SUSUMU , NISHIUCHI HIDEO , HIGUCHI KAZUTO
IPC分类号： H01L33/38
CPC分类号： H01L2224/11
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device suitable for down-sizing in which discrimination of electrodes is facilitated, and to provide a method of manufacturing te same.SOLUTION: The semiconductor light-emitting device comprises a light-emitting part 10d, a first conductive part 30a, a second conductive part 30b, an encapsulation part 50, and an optical layer 60. The light-emitting part includes a semiconductor laminate having a first principal surface 10b and a second principal surface 10a on the reverse side of the first principal surface, and first and second electrodes provided on the second principal surface 10a. The first and second conductive parts are electrically connected, respectively, with the first and second electrodes and include first and second column parts standing on the second principal surface. The encapsulation part covers the lateral face of the first and second conductive parts. The optical layer is provided on the first principal surface of the semiconductor laminate, and includes a wavelength conversion part which converts the wavelength of light emitted from the light-emitting part. A first end face 31ae of the first conductive part on the reverse side of the semiconductor laminate, and a second end face 31be of the second conductive part on the reverse side of the semiconductor laminate are asymmetrical.
摘要翻译：要解决的问题：提供一种适用于便于鉴别电极的缩小尺寸的半导体发光器件，并提供一种制造方法。解决方案：半导体发光器件包括发光部分10d，第一导电部分30a，第二导电部分30b，封装部分50和光学层60.发光部分包括半导体层叠体具有在第一主表面的相反侧的第一主表面10b和第二主表面10a，以及设置在第二主表面10a上的第一和第二电极。第一和第二导电部分分别与第一和第二电极电连接，并且包括站在第二主表面上的第一和第二列部分。封装部分覆盖第一和第二导电部件的侧面。光学层设置在半导体层叠体的第一主表面上，并且包括波长转换部分，其转换从发光部分发射的光的波长。半导体层叠体的背面的第一导电部的第一端面31ae和半导体层叠体的反面的第二导电部的第二端面31be是不对称的。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2007033194A Test substrate and stress measuring method of joint 审中-公开
标题翻译：接头的测试基板和应力测量方法
公开(公告)号：JP2007033194A
公开(公告)日：2007-02-08
申请号：JP2005215945
申请日：2005-07-26
申请人： Toshiba Corp , 株式会社東芝
发明人： NISHIUCHI HIDEO
IPC分类号： G01L1/16
摘要： PROBLEM TO BE SOLVED: To provide a test substrate and a stress measuring method capable of measuring accurately a stress caused by drop impact applied to a joint between an electronic component and a substrate.
SOLUTION: This test substrate 1 is equipped with the substrate 2, the first electrode 9 provided on the substrate 2 surface, a piezoelectric element 10 laminated on the first electrode 9, the second electrode 11 laminated on the piezoelectric element 10, the first external terminal 5 provided on the substrate 2 and connected to the first electrode 9, and the second external terminal 6 provided on the substrate 2 and connected to the second electrode 11.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够精确地测量由施加到电子部件和基板之间的接合处的液滴冲击引起的应力的测试基板和应力测量方法。解决方案：该测试基板1配备有基板2，设置在基板2表面上的第一电极9，层叠在第一电极9上的压电元件10，层压在压电元件10上的第二电极11，第一外部端子5设置在基板2上并连接到第一电极9，第二外部端子6设置在基板2上并连接到第二电极11.版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2014160717A Power conversion device and semiconductor device 审中-公开
标题翻译：功率转换器件和半导体器件
公开(公告)号：JP2014160717A
公开(公告)日：2014-09-04
申请号：JP2013030062
申请日：2013-02-19
申请人： Toshiba Corp , 株式会社東芝
发明人： HISADA HIDEKI , TANAKA SHOICHIRO , NISHIUCHI HIDEO
IPC分类号： H01L23/40 , H01L25/07 , H01L25/18 , H02M7/48 , H05K7/20
CPC分类号： H01L2924/0002 , Y02T10/6204 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a power conversion device which is low cost and has an improved cooling performance without causing increase in size.SOLUTION: According to an embodiment, a power conversion device comprises: a cooler 12 having a cooling surface 18a; a semiconductor device 16 which includes a semiconductor element and at least two power terminals 46a, 46b and is arranged on the cooling surface of the cooler; and a main circuit bus bar which has a plurality of connection terminals 24 connected to the power terminals of the semiconductor device. Each power terminal of the semiconductor device includes a contact part 47a which extends in a substantially perpendicular direction with respect to the cooling surface of the cooler; and a spring part 48a which is formed at a part of the contact part and elastically deformed in the perpendicular direction. The contact part of each power terminal is joined to the connection terminal of the main circuit bus bar and the spring part is elastically deformed in a compression direction.
摘要翻译：要解决的问题：提供一种低成本并且具有改善的冷却性能而不引起尺寸增加的电力转换装置。解决方案：根据实施例，电力转换装置包括：具有冷却表面18a的冷却器12; 包括半导体元件和至少两个电源端子46a，46b并布置在冷却器的冷却表面上的半导体器件16; 以及主电路母线，其具有连接到半导体器件的电源端子的多个连接端子24。半导体器件的每个电源端子包括相对于冷却器的冷却表面沿大致垂直的方向延伸的接触部分47a; 以及形成在接触部的一部分并且沿垂直方向弹性变形的弹簧部48a。每个电源端子的接触部分连接到主电路母线的连接端子，弹簧部分沿压缩方向弹性变形。

5. 发明专利

JP2014093411A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2014093411A
公开(公告)日：2014-05-19
申请号：JP2012242865
申请日：2012-11-02
申请人： Toshiba Corp , 株式会社東芝
发明人： MASUNAGA TAKAYUKI , UEDA KAZUHIRO , WATANABE NAOTAKE , SHIMIZU SADAYUKI , NISHIUCHI HIDEO , TOGASAKI TAKASHI , SAYAMA SATOSHI
IPC分类号： H01L25/07 , H01L21/56 , H01L23/28 , H01L23/29 , H01L23/48 , H01L25/18
CPC分类号： H01L23/495 , H01L23/492 , H01L23/49562 , H01L23/49575 , H01L23/49811 , H01L25/115 , H01L25/18 , H01L2924/0002 , H01L2924/1815 , H02M7/003 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device that can be miniaturized, be improved in its reliability, and be densely installed.SOLUTION: According to an embodiment, the semiconductor device comprises a first conductor, a second conductor, a first semiconductor element and a second semiconductor element which are bonded between the first conductor and the second conductor, a first power terminal 46a, a second power terminal 46b, a signal terminal 50, and a rectangular parallelepiped shaped insulator 52 covering these component members. The insulator has a flat bottom surface from which the first and second conductors are exposed, a flat first side surface 52a extending perpendicularly to the bottom surface, a second side surface 52b that extends perpendicularly to the bottom surface and is opposed in parallel to the first side surface, a ceiling surface 52d, a first end surface 52e, and a second end surface 52e. The first power terminal extends outward from the first end surface. The second power terminal extends outward from the second end surface. The signal terminal extends outward from the ceiling surface. A parting line 54 is formed over the first end surface, the ceiling surface, and the second end surface of the insulator.
摘要翻译：要解决的问题：提供可以小型化的半导体器件，其可靠性提高并且被紧密地安装。解决方案：根据实施例，半导体器件包括第一导体，第二导体，第一半导体元件和接合在第一导体和第二导体之间的第二半导体元件，覆盖这些部件的第一电源端子46a，第二电源端子46b，信号端子50和矩形平行六面体形状的绝缘体52。绝缘体具有平坦的底表面，第一和第二导体从该底表面露出，垂直于底表面延伸的平坦的第一侧表面52a，垂直于底表面延伸且平行于第一侧表面，天花板表面52d，第一端面52e和第二端面52e。第一电源端子从第一端面向外延伸。第二电源端子从第二端面向外延伸。信号端子从天花板表面向外延伸。分离线54形成在绝缘体的第一端面，天花板表面和第二端面之上。

6. 发明专利

JP2013077852A Light source device using semiconductor light-emitting device 有权
标题翻译：使用半导体发光器件的光源器件
公开(公告)号：JP2013077852A
公开(公告)日：2013-04-25
申请号：JP2013016224
申请日：2013-01-30
申请人： Toshiba Corp , 株式会社東芝
发明人： NISHIUCHI HIDEO , HIGUCHI KAZUTO , OBATA SUSUMU , NAKAYAMA TOSHIYA
IPC分类号： H01L33/64
摘要： PROBLEM TO BE SOLVED: To provide a light source device using a small semiconductor light-emitting device and having a high heat radiation property.SOLUTION: According to one embodiment, provided is a light source device having a semiconductor light-emitting device, a mounting substrate, a first connection material, and a second connection material. The semiconductor light-emitting device includes a light-emission part, a first conductive part, a second conductive part, an encapsulation part, and an optical layer. The mounting substrate includes a base substance, a first substrate electrode and a second substrate electrode. The connection materials electrically connect between the conductive parts and the substrate electrodes. The first and second conductive parts include first and second pillar parts electrically connected with an electrode of the light-emission part and erected on a second principal surface. The encapsulation part covers lateral faces of the first and second conductive parts. The optical layer includes a wavelength converter and is provided on an opposite side to the second principal surface, of a semiconductor lamination body. An area of the second substrate electrode is one hundred times as large as a cross sectional area of the second pillar part. A vertical length and a lateral length of a planar shape of the first substrate electrode and the second substrate electrode are equal to each other.
摘要翻译：解决的问题：提供一种使用小型半导体发光装置并具有高散热性的光源装置。解决方案：根据一个实施例，提供了一种具有半导体发光器件，安装衬底，第一连接材料和第二连接材料的光源器件。半导体发光器件包括发光部分，第一导电部分，第二导电部分，封装部分和光学层。安装基板包括基体，第一基板电极和第二基板电极。连接材料在导电部件和基板电极之间电连接。第一和第二导电部分包括与发光部分的电极电连接并竖立在第二主表面上的第一和第二柱部分。封装部分覆盖第一和第二导电部件的侧面。光学层包括波长转换器，并且设置在半导体层叠体的与第二主表面相对的一侧。第二基板电极的面积是第二柱部的截面积的一百倍。第一基板电极和第二基板电极的平面形状的垂直长度和横向长度彼此相等。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2013065529A Illuminating device 有权
标题翻译：照明设备
公开(公告)号：JP2013065529A
公开(公告)日：2013-04-11
申请号：JP2011204898
申请日：2011-09-20
申请人： Toshiba Corp , 株式会社東芝
发明人： NISHIUCHI HIDEO , KOMATSU IZURU , SUZUKI DAIGO , TATEYAMA KAZUKI
IPC分类号： F21S2/00 , F21V19/00 , F21V29/00 , F21Y101/02 , H01L33/64
CPC分类号： F21V29/83 , F21K9/23 , F21K9/238 , F21V7/22 , F21V23/006 , F21V29/505 , F21V29/508 , F21V29/87 , F21V29/89 , F21Y2107/20 , F21Y2115/10
摘要： PROBLEM TO BE SOLVED: To provide an illuminating device that can improve heat dissipation properties.SOLUTION: The illuminating device of the embodiment has a base part and multiple light emitting elements; the illuminating device includes a supporting part having an outer surface in contact with the outside air, which is arranged on one end of the base part, and which encloses an internal space. The multiple light emitting elements are disposed on the inner surface side of the supporting part so that at least light emitting surfaces of the light emitting elements are in contact with the supporting part.
摘要翻译：解决的问题：提供能够提高散热性的照明装置。解决方案：本实施例的照明装置具有基部和多个发光元件; 所述照明装置包括支撑部，所述支撑部具有与所述外部空气接触的外表面，所述外表面布置在所述基部的一端并且包围内部空间。多个发光元件设置在支撑部件的内表面侧，使得至少发光元件的发光表面与支撑部件接触。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2012181952A Lighting apparatus 有权
标题翻译：照明设备
公开(公告)号：JP2012181952A
公开(公告)日：2012-09-20
申请号：JP2011042629
申请日：2011-02-28
申请人： Toshiba Corp , 株式会社東芝
发明人： IOKA KUMIKO , INOUE MICHINOBU , NISHIUCHI HIDEO , TATEYAMA KAZUKI , MORIYA KIMIMOTO
IPC分类号： F21S2/00 , F21V15/01 , F21V29/00 , F21Y101/02
CPC分类号： F21K9/1355 , F21K9/23 , F21V23/02 , F21V29/75 , F21V29/76 , F21Y2115/10
摘要： PROBLEM TO BE SOLVED: To provide a lighting apparatus with heat radiation properties improved.SOLUTION: The lighting apparatus is provided with a case, a power source unit, and a light-emitting unit. The power source unit is housed inside the case. The light-emitting unit, fitted on the power source unit, contains light-emitting elements emitting light by current supplied from the power source unit. The case has a side part surrounding the power source unit around a first axis parallel to a direction headed from the power source unit to the light-emitting unit. The side part consists of a first part with a longer distance from a center axis arranged around the center axis passing a center of a circumcircle in contact with a top end of the case as seen along the first axis and parallel to the first axis, and a second part with a shorter distance from the center axis. An end part of an inner side face as the inner side face opposed to the power source unit of the second part is cut at a cross section orthogonal to the center axis has at least either an orthogonal part or a concave part with respect to the center axis.
摘要翻译：要解决的问题：提供改善了散热性能的照明装置。 <解决方案>照明装置设置有壳体，电源单元和发光单元。电源单元容纳在外壳内。安装在电源单元上的发光单元包含通过从电源单元提供的电流发光的发光元件。该壳体具有围绕与从电源单元朝向发光单元的方向平行的第一轴线围绕电源单元的侧部。侧部包括第一部分，其距中心轴线更长的距离，该中心轴线绕着沿着第一轴线并平行于第一轴线观察的通过与壳体的顶端接触的外接圆的中心的中心轴线，并且距中心轴距离较短的第二部分。作为与第二部分的电源单元相对的内侧面的内侧面的端部在与中心轴线正交的横截面上被切割，具有相对于中心的至少一个正交部分或凹部轴。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2010087490A Semiconductor device and semiconductor device manufacturing method 有权
标题翻译：半导体器件和半导体器件制造方法
公开(公告)号：JP2010087490A
公开(公告)日：2010-04-15
申请号：JP2009201415
申请日：2009-09-01
申请人： Toshiba Corp , 株式会社東芝
发明人： TOJO HIROSHI , KITANI TOMOYUKI , HIGUCHI KAZUTO , OISHI MASAKO , IGUCHI TOMOHIRO , NISHIUCHI HIDEO , KATO KYOKO
IPC分类号： H01L23/48
CPC分类号： H01L24/97 , H01L21/561 , H01L21/568 , H01L23/3107 , H01L23/544 , H01L24/03 , H01L24/48 , H01L2223/54433 , H01L2223/54486 , H01L2224/04042 , H01L2224/274 , H01L2224/48091 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/181 , H01L2924/19041 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which improves an electric characteristic and keeps high reliability by means of a structure without using a bonding wire, and which can improve a productivity by removing a laser machining process and shortening a manufacturing time, and to provide its manufacturing method. SOLUTION: The semiconductor device includes a semiconductor chip 2 in which a first electrode 2a1 is located on a first surface 2a and a second electrode 2b1 is located on a second surface 2b opposed to the first surface 2a, a sealing component 3 which exposes only areas of the first electrode 2a1 and second electrode 2b1 to seal the other surface of the semiconductor chip 2, an internal electrode 4 which is connected with the first electrode 2a1 or the second electrode 2b1, and a thickness from the first surface 2a and second surface 2b is the same as the thickness of the sealing component 3, an external electrode 5 which is connected with the internal electrode 4, is formed on the sealing component 3 too, and is at least wider than the width of the semiconductor chip 2, and external plating films 6 which cover five surfaces except for the surface of the external electrode 5 connected with the internal electrode 4. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过不使用接合线的结构提高电特性并保持高可靠性的半导体器件，并且可以通过去除激光加工过程并缩短制造时间来提高生产率并提供其制造方法。解决方案：半导体器件包括半导体芯片2，其中第一电极2a1位于第一表面2a上，第二电极2b1位于与第一表面2a相对的第二表面2b上，密封部件3 仅露出第一电极2a1和第二电极2b1的区域，以密封半导体芯片2的另一个表面，与第一电极2a1或第二电极2b1连接的内部电极4和来自第一表面2a和第二表面2b与密封部件3的厚度相同，与内部电极4连接的外部电极5也形成在密封部件3上，并且至少比半导体芯片2的宽度宽，以及外部电镀膜6，其覆盖与内部电极4连接的外部电极5的表面以外的五个表面。（C）2010，JPO＆INPIT

10. 发明专利

JP2009194153A Method of manufacturing semiconductor device and ultrasonic joining apparatus 审中-公开
标题翻译：制造半导体器件和超声波接合装置的方法
公开(公告)号：JP2009194153A
公开(公告)日：2009-08-27
申请号：JP2008033316
申请日：2008-02-14
申请人： Toshiba Corp , 株式会社東芝
发明人： NISHIUCHI HIDEO , IGUCHI TOMOHIRO , KITANI TOMOYUKI , AIZAWA TAKAHIRO , OISHI MASAKO , TOJO HIROSHI
IPC分类号： H01L21/60 , H01L21/607
CPC分类号： H01L24/40 , B23K20/004 , B23K20/10 , B23K20/106 , B23K2201/42 , H01L24/37 , H01L24/45 , H01L24/48 , H01L24/77 , H01L24/84 , H01L2224/05554 , H01L2224/05644 , H01L2224/371 , H01L2224/37124 , H01L2224/37599 , H01L2224/40091 , H01L2224/40247 , H01L2224/451 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73219 , H01L2224/73221 , H01L2224/83801 , H01L2224/84205 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of excellently bonding a connection conductor 16 to lead terminals 13. SOLUTION: The method of manufacturing the semiconductor device 1 is configured so that lead terminals 13 formed on a lead frame 20 exhibiting an elongated plate shape and having one end solely supported in the longitudinal direction and an upper surface electrode 15 of a semiconductor chip 10 mounted on the lead frame 20 are connected by ultrasonic joining to a connection conductor 16 as a plate-like or strip-like connection conductor. The method comprises a step of pressing a part of the connection conductor 16 so that it contacts with the lead terminals 13, and a step of applying ultrasonic vibration in a direction substantially following the longitudinal direction in a plane crossing the pressing direction to the connection conductor 16 in a pressed state. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决方案：提供一种制造半导体器件的方法，该半导体器件能够将连接导体16极好地接合到引线端子13.解决方案：制造半导体器件1的方法被配置为使得引线端子13 形成在引线框架20上，其呈现出细长的板状，并且一端仅沿纵向方向支撑，并且安装在引线框架20上的半导体芯片10的上表面电极15通过超声波接合连接到连接导体16，如板状或带状连接导体。该方法包括将连接导体16的一部分按压使其与引线端子13接触的步骤，以及在与该连接导体交叉的方向上沿大致沿着长度方向的方向上施加超声波振动的步骤 16处于按压状态。版权所有（C）2009，JPO＆INPIT

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