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1. 发明专利

JP2013008817A Semiconductor light emitting element and manufacturing method of the same 审中-公开
标题翻译：半导体发光元件及其制造方法
公开(公告)号：JP2013008817A
公开(公告)日：2013-01-10
申请号：JP2011140244
申请日：2011-06-24
申请人： Toshiba Corp , 株式会社東芝
发明人： NITTA KOICHI
IPC分类号： H01L33/32 , H01L33/42
CPC分类号： H01L33/385 , H01L33/405 , H01L33/42 , H01L33/44 , H01L2933/0016
摘要： PROBLEM TO BE SOLVED: To realize a semiconductor light emitting element achieving high light extraction efficiency.SOLUTION: According to one embodiment, a semiconductor light emitting element is provided with a substrate, a conductive reflection film, an active region, a first electrode, a transparent conductive film, and a second electrode. The conductive reflection film is provided on the substrate. In the active region, a first conductive type transparent electrode, a first conductive type contact layer, a light emitting layer, a second conductive type contact layer, and a second conductive type transparent electrode are formed on the conductive reflection film in the laminated state. The first electrode is provided on the conductive reflection film, separating from the active region. One end of the transparent conductive film is provided so as to cover an upper part of the second conductive type transparent electrode and the other end of the transparent conductive film is provided on the conductive reflection film through an insulation film. The transparent conductive film contacts with a side surface of the active region through the insulation film. The second electrode is provided on the other end of the transparent conductive film.
摘要翻译：要解决的问题：实现获得高光提取效率的半导体发光元件。解决方案：根据一个实施例，半导体发光元件设置有基板，导电反射膜，有源区，第一电极，透明导电膜和第二电极。导电反射膜设置在基板上。在有源区域中，在层叠状态的导电性反射膜上形成有第一导电型透明电极，第一导电型接触层，发光层，第二导电型接触层和第二导电型透明电极。第一电极设置在导电反射膜上，与有源区分离。透明导电膜的一端设置成覆盖第二导电型透明电极的上部，透明导电膜的另一端通过绝缘膜设置在导电性反射膜上。透明导电膜通过绝缘膜与有源区的侧表面接触。第二电极设置在透明导电膜的另一端上。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2007281529A Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：JP2007281529A
公开(公告)日：2007-10-25
申请号：JP2007196158
申请日：2007-07-27
申请人： Toshiba Corp , 株式会社東芝
发明人： NITTA KOICHI , ABE HIROHISA , KONNO KUNIAKI , IDEI YASUO
IPC分类号： H01L33/06 , H01L33/08 , H01L33/10 , H01L33/12 , H01L33/32 , H01L33/36 , H01L33/60
摘要： PROBLEM TO BE SOLVED: To provide a white light emitting device having high brightness. SOLUTION: The semiconductor light emitting device includes a semiconductor light emitting chip including an active layer which emits light with first wavelength by current injection, and a light emitting layer which is adhered to the surface of the substrate of the semiconductor light emitting chip and emits light with second wavelength by being exited by the light with first wavelength. The light emitting layer is formed separately in a plurality of areas of 1/3 to 2/3 of the surface of the substrate, and the light emitting layer is interposed between a pair of n-type and p-type cladding layers each having a band gap larger than that of the light emitting layer. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有高亮度的白色发光器件。解决方案：半导体发光器件包括：半导体发光芯片，其包括通过电流注入发射具有第一波长的光的有源层;以及发光层，其粘附到半导体发光芯片的基板的表面并通过被第一波长的光排出而发射具有第二波长的光。发光层分别形成在基板的表面的1/3〜2/3的多个区域中，并且发光层插入在一对n型和p型覆盖层之间，每层具有带隙大于发光层的带隙。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2006032837A Semiconductor luminous element 审中-公开
标题翻译：半导体元器件
公开(公告)号：JP2006032837A
公开(公告)日：2006-02-02
申请号：JP2004212885
申请日：2004-07-21
申请人： Toshiba Corp , 株式会社東芝
发明人： NITTA KOICHI , NAKAMURA TAKAFUMI , ISOMOTO KENJI
IPC分类号： H01L33/06 , H01L33/14 , H01L33/30 , H01L33/40
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor luminous element that never shows thyristor characteristics. SOLUTION: The semiconductor luminous element is provided with a first trap relaxing layer 1 adhered onto a GaP substrate 100 through a first adhesive layer 101, a first clad layer 103 laminated and formed on the first trap relaxing layer 102, a luminous layer 104 laminated and formed on the first clad layer 103, a second clad layer 105 laminated and formed on the luminous layer 104, a second trap relaxing layer 106 laminated and formed on the second clad layer 105, a GaP window layer 108 which adheres to the second trap relaxing layer 106 through a second adhesive layer 107 and is provided on the surface side of the luminous layer 104, and electrodes 109, 110. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：获得从不显示晶闸管特性的半导体发光元件。解决方案：半导体发光元件设置有通过第一粘合层101粘合到GaP基板100上的第一陷阱缓和层1，层叠并形成在第一陷阱缓和层102上的第一覆盖层103，发光层 104层叠并形成在第一包层103上，层叠并形成在发光层104上的第二包覆层105，层叠并形成在第二包层105上的第二陷阱缓和层106，GaP窗口层108，第二陷阱缓和层106穿过第二粘合剂层107并且设置在发光层104的表面侧以及电极109,110上。（C）2006，JPO和NCIPI

4. 发明专利

JP2007266629A Image display device 审中-公开
标题翻译：图像显示设备
公开(公告)号：JP2007266629A
公开(公告)日：2007-10-11
申请号：JP2007160782
申请日：2007-06-18
申请人： Toshiba Corp , 株式会社東芝
发明人： KAWAMOTO SATOSHI , ISHIKAWA MASAYUKI , UMEJI TADASHI , KONNO KUNIAKI , NITTA KOICHI , OKAZAKI HARUHIKO
IPC分类号： G02F1/13 , G02F1/13357 , G09F9/30 , H01L33/50 , H01L33/56 , H01L33/60 , H01L33/62
CPC分类号： H01L2224/32013 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/49107 , H01L2224/49113 , H01L2224/73265 , H01L2224/8592 , H01L2924/181 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide an image display device in which miniaturizing and lightening can be easily performed, the visual field angle is wide, the display quality is high, and reliability is high. SOLUTION: The image display device has a light source for emitting light using a semiconductor light emitting element as a light source; a light dimmer which adjusts the intensity of the incident light for every pixel, and transmits the light as a transmission light, or intercepts the light; and a wavelength converter which receives the incident light, and emits a light having a different intensity spectrum. The semiconductor light emitting element is a light emitting element, in which a peak wavelength of the light emission spectrum is in blue region. The wavelength converter has two kinds of phosphors and one kind of light transmission body arranged according to predetermined pixel pattern. Each of the two kinds of phosphors is a phosphor which transforms the incident light to visible light of red or green wavelength band. The one kind of light transmission body is constituted to transmit the transmission light. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供可以容易地进行小型化和轻量化的图像显示装置，视场角宽，显示质量高，可靠性高。解决方案：图像显示装置具有使用半导体发光元件作为光源发光的光源; 调整每个像素的入射光强度的光调光器，并且透射作为透射光的光，或截取光; 以及接收入射光并发射具有不同强度光谱的光的波长转换器。半导体发光元件是其中发光光谱的峰值波长处于蓝色区域的发光元件。波长转换器具有根据预定像素图案布置的两种荧光体和一种透光体。两种荧光体中的每一种是将入射光转换成红色或绿色波长带的可见光的荧光体。一种透光体被构造成透射透射光。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2006261688A Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：JP2006261688A
公开(公告)日：2006-09-28
申请号：JP2006129459
申请日：2006-05-08
申请人： Toshiba Corp , Toshiba Electronic Engineering Corp , 東芝電子エンジニアリング株式会社 , 株式会社東芝
发明人： FURUKAWA CHISATO , NITTA KOICHI
IPC分类号： H01L33/32 , H01L23/29 , H01L23/31 , H01L33/50 , H01L33/54 , H01L33/56 , H01L33/60 , H01L33/62
CPC分类号： H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To efficiently extract light output from a light-emitting device which is constituted by a combination of a semiconductor light-emitting chip and fluorescent substances. SOLUTION: The light-emitting device is constituted in such a way that a fluorescent-substance layer 18 is irradiated with a UV light emitted from a UV-LED, and the lights generated in the fluorescent-substrate layer 18 penetrate the UV-LED and are extracted from a plate 12 side without passing through the fluorescent-substance layer 18. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：为了有效地提取从由半导体发光芯片和荧光物质的组合构成的发光装置的输出的光。解决方案：发光装置以这样的方式构成，即，用UV-LED发射的UV光照射荧光物质层18，并且在荧光基底层18中产生的光穿透UV -LED，并且不经过荧光物质层18从板12侧提取。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2005328093A Manufacturing method for compound semiconductor equipment 有权
标题翻译：复合半导体器件的制造方法
公开(公告)号：JP2005328093A
公开(公告)日：2005-11-24
申请号：JP2005228277
申请日：2005-08-05
申请人： Toshiba Corp , 株式会社東芝
发明人： FUJIMOTO HIDETOSHI , NITTA KOICHI , ISHIKAWA MASAYUKI , SUGAWARA HIDETO , KOKUBU YOSHIHIRO , YAMAMOTO MASAHIRO
IPC分类号： H01L33/32 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide high-reliability compound semiconductor equipment. SOLUTION: The manufacturing method for this compound semiconductor equipment comprises a process of letting silica of 1×10 16 cm -3 to 8×10 17 cm -3 contained in a first semiconductor layer 25 composed of p-type nitride compound or a first semiconductor layer 26 composed of i-type nitride compound, each of which contains magnesium, and then process to etch the first semiconductor layers 25 and 26. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供高可靠性的复合半导体设备。解决方案：该化合物半导体设备的制造方法包括将1×10 3 2的二氧化硅放入8×10 17 < 包含在由p型氮化物构成的第一半导体层25或由含有镁的i型氮化物构成的第一半导体层26中的/ SP> cm -3 蚀刻第一半导体层25和26。（C）2006，JPO＆NCIPI

7. 发明专利

JP2003338637A Semiconductor luminous element and semiconductor light- emitting device 有权
标题翻译：半导体元件和半导体发光器件
公开(公告)号：JP2003338637A
公开(公告)日：2003-11-28
申请号：JP2003062079
申请日：2003-03-07
申请人： Toshiba Corp , 株式会社東芝
发明人： NITTA KOICHI , NAKAMURA TAKAFUMI , KONNO KUNIAKI , AKAIKE YASUHIKO , ENDO YOSHINORI
IPC分类号： H01L33/06 , H01L33/10 , H01L33/16 , H01L33/20 , H01L33/22 , H01L33/30 , H01L33/00
CPC分类号： H01L33/20 , H01L33/22 , H01L33/38 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/10155 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element and a semiconductor light-emitting device that have high light emitting efficiency, a high yield, and a long life. SOLUTION: In the semiconductor light-emitting element having a light generation layer for radiating light and a translucent substrate to the light at the side of the substrate, there are a first side that is formed by cleavage and prevents a crystal defect, a second side for injecting one portion of the light from the light generation layer to the outside, and a third side for facilitating mounting. Additionally, on the side of the substrate, there are a first side for preventing the peel-off between the element and a lead frame, a second side for injecting one portion of the light from the light generation layer to the outside, and a third side for facilitating mounting. COPYRIGHT: (C)2004,JPO
摘要翻译：解决的问题：提供发光效率高，产率高，寿命长的半导体发光元件和半导体发光元件。解决方案：在具有用于照射光的发光层和对基板一侧的光的透光性基板的半导体发光元件中，存在通过切割而形成的第一面，防止晶体缺陷，用于将一部分光从光产生层注入外部的第二侧和用于便于安装的第三侧。此外，在基板侧，存在用于防止元件和引线框架之间的剥离的第一侧，用于将来自光产生层的一部分光注入外部的第二侧，以及第三侧侧面，便于安装。版权所有（C）2004，JPO

8. 发明专利

JP2013175757A Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：JP2013175757A
公开(公告)日：2013-09-05
申请号：JP2013080792
申请日：2013-04-08
申请人： Toshiba Corp , 株式会社東芝
发明人： KAWAMOTO SATOSHI , NITTA KOICHI , KONNO KUNIAKI , SUZUKI NOBUHIRO
IPC分类号： H01L33/50 , H01L33/32 , H01L33/60
CPC分类号： H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element and a semiconductor device capable of emitting light at high luminance in various wavelengths from visible light to infrared region with an extremely stable emission wavelength, and to provide a method of manufacturing the semiconductor device.SOLUTION: Fluorescent material having a wavelength conversion function is properly mixed, accumulated or arranged to an inside, a surface of a semiconductor light emitting element, a resin portion of a semiconductor light emitting device, or a surface or an inside of other envelopes.
摘要翻译：要解决的问题：提供一种能够以非常稳定的发射波长的可见光到红外区域以各种波长从高亮度发光的半导体发光元件和半导体器件，并提供半导体器件的制造方法。解决方案：具有波长转换功能的荧光材料适当地混合，积聚或布置在半导体发光元件的内部，表面，半导体发光器件的树脂部分或其它信封的表面或内部。

9. 发明专利

JP2008090298A Light emitting device 审中-公开
标题翻译：发光装置
公开(公告)号：JP2008090298A
公开(公告)日：2008-04-17
申请号：JP2007234738
申请日：2007-09-10
申请人： Toshiba Corp , 株式会社東芝
发明人： KAWAMOTO SATOSHI , ISHIKAWA MASAYUKI , UMEJI TADASHI , KONNO KUNIAKI , NITTA KOICHI , OKAZAKI HARUHIKO
IPC分类号： G09F9/00 , F21V9/16 , F21Y101/02 , G02F1/13357 , H01L33/32 , H01L33/50 , H01L33/56 , H01L33/60 , H01L33/62
CPC分类号： H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/49107 , H01L2224/8592 , H01L2924/181 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a light emitting device suitable for various applications. SOLUTION: Ultraviolet light emitted from a light source part 20 provided with a light emitting element is transmitted through a dimming part 30e including a liquid crystal layer 36 and polarizing plates 31 and 39 holding the liquid crystal layer 36 between themselves and then is subjected to wavelength conversion into wavelength areas of red, green, and blue by a wavelength conversion part 40b including phosphors 44a, 44b, and 44c. An ultraviolet light absorbing filter 46 layered on the wavelength conversion part prevents leakage to the outside, of the ultraviolet light emitted from the light emitting element. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供适用于各种应用的发光装置。解决方案：从设置有发光元件的光源部分20发射的紫外光透过包括液晶层36的调光部分30e和将液晶层36保持在它们之间的偏振片31和39，然后是通过包括磷光体44a，44b和44c的波长转换部分40b将波长转换成红色，绿色和蓝色的波长区域。层叠在波长转换部上的紫外线吸收滤光器46防止从发光元件发出的紫外线向外部泄漏。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2007251209A Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：JP2007251209A
公开(公告)日：2007-09-27
申请号：JP2007160783
申请日：2007-06-18
申请人： Toshiba Corp , 株式会社東芝
发明人： KAWAMOTO SATOSHI , ISHIKAWA MASAYUKI , UMEJI TADASHI , KONNO KUNIAKI , NITTA KOICHI , OKAZAKI HARUHIKO
IPC分类号： G09F9/33 , H01L33/20 , H01L33/32 , H01L33/56 , H01L33/62
CPC分类号： H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a light emitting device suitable for a light source of a picture display device in which miniaturization and weight reduction are easily realized, the visual field angle is wide, the display quality is high, and reliability is high, and for other various uses. SOLUTION: A plurality of light-emitting diodes having different wavelength is laminated so that light-emission is blocked when viewed from a light-extraction direction. The light-emitting devices are configured so that each of the light-emission from the plurality of the light-emitting diodes is extracted in the light-extraction direction. COPYRIGHT: (C)2007,JPO&INPIT

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