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1. 发明专利

JP2009218280A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2009218280A
公开(公告)日：2009-09-24
申请号：JP2008058197
申请日：2008-03-07
申请人： Toshiba Corp , 株式会社東芝
发明人： ENDO YOSHINORI , MIYAKE EITARO , IWAGAMI YASUYUKI , USUDA OSAMU
IPC分类号： H01L21/52 , H01L23/12 , H05K3/34
CPC分类号： H01L24/32 , H01L2224/26175 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a highly accurate semiconductor device for preventing generation of solder balls and reducing positional deviation including θ rotation of a chip. SOLUTION: The semiconductor device includes a mounting member 120 having a mounting surface 121, and a semiconductor chip 140 bonded on the mounting surface 121 by solder, wherein a first region 141 and a second region 160 surrounding the semiconductor chip 140 and having wettability to the solder lower than the first region 141 are provided around the semiconductor chip 140 of the mounting surface 121. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于防止焊球产生的高精度半导体器件，并且减少包括芯片的θ旋转的位置偏差。解决方案：半导体器件包括具有安装表面121的安装构件120和通过焊料接合在安装表面121上的半导体芯片140，其中第一区域141和围绕半导体芯片140的第二区域160具有设置在安装面121的半导体芯片140周围的比焊料低于第一区域141的润湿性。（C）2009，JPO＆INPIT

2. 发明专利

JP2009016380A Semiconductor apparatus and manufacturing method thereof 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2009016380A
公开(公告)日：2009-01-22
申请号：JP2007173032
申请日：2007-06-29
申请人： Toshiba Corp , 株式会社東芝
发明人： MIYAKE EITARO , ENDO YOSHINORI
IPC分类号： H01L23/48
CPC分类号： H01L2224/32245 , H01L2224/34 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/00014 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/37099 , H01L2224/37599
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor apparatus excellent in heat radiation and a manufacturing method thereof. SOLUTION: A first electrode plate 2 is arranged on the surface of a semiconductor device 6 having a gate electrode 6A and a source electrode 6B thereof, and a second electrode plate 4 is arranged on the backside having a drain electrode 6C thereof. Second legs 4B of the second electrode plate 4 are arranged to be nearly flush with first legs 2B of the first electrode plate 2. The first electrode plate 2 side is mounted on a printed wiring board. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种散热优良的半导体装置及其制造方法。解决方案：第一电极板2设置在具有栅电极6A和源电极6B的半导体器件6的表面上，第二电极板4布置在其背面，具有漏电极6C。第二电极板4的第二支腿4B布置成与第一电极板2的第一支腿2B几乎齐平。第一电极板2侧安装在印刷线路板上。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2008117825A Power semiconductor device 审中-公开
标题翻译：功率半导体器件
公开(公告)号：JP2008117825A
公开(公告)日：2008-05-22
申请号：JP2006297334
申请日：2006-11-01
申请人： Toshiba Corp , 株式会社東芝
发明人： MIYAGAWA TAKESHI , ENDO YOSHINORI , MIYAKE EITARO
IPC分类号： H01L21/60 , H01L25/07 , H01L25/18
CPC分类号： H01L24/73 , H01L2224/32245 , H01L2224/37 , H01L2224/37147 , H01L2224/40 , H01L2224/40091 , H01L2224/40245 , H01L2224/45 , H01L2224/45014 , H01L2224/45015 , H01L2224/45033 , H01L2224/45124 , H01L2224/48091 , H01L2224/48472 , H01L2224/49426 , H01L2224/49427 , H01L2224/73219 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01082 , H01L2924/07802 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/2076 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a power semiconductor device that is high in reliability. SOLUTION: A semiconductor chip 4 is mounted to a lead frame 2 in the power semiconductor device 11. A source electrode 4s is formed on the surface of the semiconductor chip 4. In addition, a thin conductive ribbon 6 is provided on the source electrode 4s, and it is bonded to the source electrode 4s by ultrasonic bonding. A conductive ribbon 8 thicker than the conductive ribbon 6 is provided thereon, and it is bonded to the conductive ribbon 6 by ultrasonic bonding while pinching that ribbon 6 between the source electrode 4s and itself. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供可靠性高的功率半导体器件。解决方案：半导体芯片4安装在功率半导体器件11中的引线框架2上。源电极4s形成在半导体芯片4的表面上。另外，在源电极4s，通过超声波接合与源电极4s接合。在导电带6上设置比导电带6厚的导电带8，并且通过超声波接合将导电带6与源极电极4s本身夹在一起。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2009076675A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2009076675A
公开(公告)日：2009-04-09
申请号：JP2007244260
申请日：2007-09-20
申请人： Toshiba Corp , 株式会社東芝
发明人： ENDO YOSHINORI , MIYAKE EITARO
IPC分类号： H01L21/60
CPC分类号： H01L2224/0603 , H01L2224/37 , H01L2224/371 , H01L2224/37147 , H01L2224/37155 , H01L2224/3754 , H01L2224/40 , H01L2224/40247 , H01L2224/48091 , H01L2224/48247 , H01L2224/83801 , H01L2224/84801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15747 , H01L2924/181 , H01L2924/3511 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device. SOLUTION: The semiconductor device has a conductive base 11; a semiconductor chip 14 having a first electrode 12 formed on a first surface and a second electrode 13 formed on a second surface opposed to the first surface, the second surface side being mounted on the conductive base 11; and a plate-like connection conductor 17 such that one end portion 17a is opposed to the first electrode 12 of the semiconductor chip at an interval, a plurality of leg-shaped wiring leads 15a to 15d extending from the one end portion 17a and bent toward the first electrode 12 are connected to the first electrode 12, and the other end portion 17b is connected to an external electrode lead 16. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供高可靠性的半导体器件。
解决方案：半导体器件具有导电基底11; 半导体芯片14具有形成在第一表面上的第一电极12和形成在与第一表面相对的第二表面上的第二电极13，第二表面侧安装在导电基底11上; 以及板状连接导体17，使得一个端部17a以一定间隔与半导体芯片的第一电极12相对，从该一个端部17a延伸的多个腿状的布线引线15a〜15d朝向第一电极12连接到第一电极12，另一端部17b连接到外部电极引线16.版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2008034514A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2008034514A
公开(公告)日：2008-02-14
申请号：JP2006204559
申请日：2006-07-27
申请人： Toshiba Corp , 株式会社東芝
发明人： ENDO YOSHINORI
IPC分类号： H01L21/52
CPC分类号： H01L2224/29076 , H01L2224/29078 , H01L2224/291 , H01L2924/01079 , H01L2924/01327 , H01L2924/10158 , H01L2924/00 , H01L2924/014
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device with lead-free solder formed therein, which is capable of suppressing a crack in a semiconductor chip. SOLUTION: The semiconductor device includes: the semiconductor chip 21; a die pad 12 opposing to the rear surface of the semiconductor chip 21; and a joint member 17 for joining the rear surface of the semiconductor chip 21 with the opposing die pad 12 by arranging an intermetallic compound 19 with Cu-Sn as a main component, in a part between the peripheral part of the rear surface of the semiconductor chip 21 and the die pad 12, and arranging an Sn solder 18 with Sn as the main component in a part between the center of the rear surface of the semiconductor chip 21 and the die pad 12. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够抑制半导体芯片中的裂纹的在其中形成的无铅焊料的半导体器件。解决方案：半导体器件包括：半导体芯片21; 与半导体芯片21的后表面相对的芯片焊盘12; 以及通过以Cu-Sn为主要成分配置金属间化合物19作为主要成分，将半导体芯片21的后表面与相对的芯片焊盘12接合的接合部件17，在半导体的背面的周围部分芯片21和芯片焊盘12，并且以Sn为主要成分的锡焊料18配置在半导体芯片21的后表面的中心与芯片焊盘12之间的部分。（C）2008 ，JPO＆INPIT

6. 发明专利

JP2014187264A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2014187264A
公开(公告)日：2014-10-02
申请号：JP2013061864
申请日：2013-03-25
申请人： Toshiba Corp , 株式会社東芝
发明人： FUKUYOSHI HIROSHI , NAKAO JUNICHI , ENDO YOSHINORI , MIYAKE EITARO
IPC分类号： H01L25/07 , H01L25/18
CPC分类号： H01L23/34 , H01L23/049 , H01L23/24 , H01L23/3735 , H01L23/4006 , H01L24/34 , H01L24/37 , H01L24/40 , H01L25/072 , H01L2224/371 , H01L2224/4007 , H01L2224/40095 , H01L2224/40225 , H01L2224/48091 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2224/8592 , H01L2924/1305 , H01L2924/13055 , H01L2924/15787 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device with high reliability to a thermal cycle test.SOLUTION: A semiconductor device includes an insulating substrate and at least one semiconductor chip provided on the insulating substrate. The device includes a wiring terminal having a connection portion electrically connected to the semiconductor chip, and an enclosure frame enclosing the semiconductor chip and the connection portion. The device further includes a burying material provided in the enclosure frame so as to cover the semiconductor chip and the connection portion, and a pressing portion provided on a surface of the burying material.
摘要翻译：要解决的问题：提供对热循环测试具有高可靠性的半导体器件。解决方案：半导体器件包括绝缘衬底和设置在绝缘衬底上的至少一个半导体芯片。该装置包括具有与半导体芯片电连接的连接部分的接线端子和封装半导体芯片和连接部分的外壳框架。该装置还包括设置在外壳框架中以覆盖半导体芯片和连接部分的掩埋材料以及设置在掩埋材料的表面上的按压部分。

7. 发明专利

JP2008311326A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2008311326A
公开(公告)日：2008-12-25
申请号：JP2007155928
申请日：2007-06-13
申请人： Toshiba Corp , 株式会社東芝
发明人： ENDO YOSHINORI
IPC分类号： H01L23/28
CPC分类号： H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which suppresses peeling of a sealing resin for high reliability. SOLUTION: The semiconductor device comprises a heat radiation plate, a semiconductor chip mounted on the surface of it, a buffer plate which is thinner than the heat radiation plate and is provided around such part of the surface of the heat radiation plate as the semiconductor chip is mounted, and a sealing resin which covers the surface of the heat radiation plate, the semiconductor chip, and the buffer plate. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供抑制密封树脂剥离以获得高可靠性的半导体器件。解决方案：半导体器件包括散热板，安装在其表面上的半导体芯片，比散热板薄的缓冲板，并且设置在散热板的表面的这一部分周围，如安装半导体芯片，以及覆盖散热板，半导体芯片和缓冲板的表面的密封树脂。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2003338637A Semiconductor luminous element and semiconductor light- emitting device 有权
标题翻译：半导体元件和半导体发光器件
公开(公告)号：JP2003338637A
公开(公告)日：2003-11-28
申请号：JP2003062079
申请日：2003-03-07
申请人： Toshiba Corp , 株式会社東芝
发明人： NITTA KOICHI , NAKAMURA TAKAFUMI , KONNO KUNIAKI , AKAIKE YASUHIKO , ENDO YOSHINORI
IPC分类号： H01L33/06 , H01L33/10 , H01L33/16 , H01L33/20 , H01L33/22 , H01L33/30 , H01L33/00
CPC分类号： H01L33/20 , H01L33/22 , H01L33/38 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/10155 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element and a semiconductor light-emitting device that have high light emitting efficiency, a high yield, and a long life. SOLUTION: In the semiconductor light-emitting element having a light generation layer for radiating light and a translucent substrate to the light at the side of the substrate, there are a first side that is formed by cleavage and prevents a crystal defect, a second side for injecting one portion of the light from the light generation layer to the outside, and a third side for facilitating mounting. Additionally, on the side of the substrate, there are a first side for preventing the peel-off between the element and a lead frame, a second side for injecting one portion of the light from the light generation layer to the outside, and a third side for facilitating mounting. COPYRIGHT: (C)2004,JPO
摘要翻译：解决的问题：提供发光效率高，产率高，寿命长的半导体发光元件和半导体发光元件。解决方案：在具有用于照射光的发光层和对基板一侧的光的透光性基板的半导体发光元件中，存在通过切割而形成的第一面，防止晶体缺陷，用于将一部分光从光产生层注入外部的第二侧和用于便于安装的第三侧。此外，在基板侧，存在用于防止元件和引线框架之间的剥离的第一侧，用于将来自光产生层的一部分光注入外部的第二侧，以及第三侧侧面，便于安装。版权所有（C）2004，JPO

9. 发明专利

JP2006073664A Semiconductor module 有权
标题翻译：半导体模块
公开(公告)号：JP2006073664A
公开(公告)日：2006-03-16
申请号：JP2004253276
申请日：2004-08-31
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIMOKAWA KAZUO , KOBARIGAWA TAKASHI , OISHI MASAKO , YAMADA TATSUYA , USUDA OSAMU , ENDO YOSHINORI , MIURA YASUKI , TOYOSHIMA MASANORI , OMURA ICHIRO , NAKAGAWA AKIO , MATSUSHITA KENICHI , KAWAGUCHI YUSUKE , ARAI HARUKI , TAKEI HIROSHI , KAWANO TOMOHIRO , YOSHIKAWA NORIO , TAKAHASHI MORIO , SAITO YASUTO , URASE MASAHIRO
IPC分类号： H01L25/07 , H01L25/18
CPC分类号： H01L23/3121 , H01L21/565 , H01L23/36 , H01L23/367 , H01L23/4822 , H01L23/49805 , H01L23/49844 , H01L24/16 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/84 , H01L25/0655 , H01L25/165 , H01L29/4175 , H01L29/7802 , H01L29/7806 , H01L29/7809 , H01L29/7813 , H01L29/7835 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/16225 , H01L2224/32225 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/40225 , H01L2224/73153 , H01L2224/73204 , H01L2224/73253 , H01L2224/83801 , H01L2224/84801 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12032 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19105 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2224/05599
摘要： PROBLEM TO BE SOLVED: To achieve reduction in mounting areal space and in wiring impedance as well as an improvement in heat dissipation in a semiconductor module for a DC-DC converter. SOLUTION: A power MOS chip 5 at the high potential side, a power MOS chip 7 at the low potential side, and an IC chip 9 for driving MOSFET gates formed in these chips, are mounted by flip chip bonding to a mounting board 3. On rear faces of the power MOS chips 5 and 7, heatsinks 53 and 55 are arranged. The heatsink 55 is fixed to the mounting board 3 at two places. The power MOS chips 5, 7 and IC chip 9 for driving are sealed as one package by a resin member 61. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了实现DC-DC转换器的半导体模块中的安装面积空间和布线阻抗的降低以及散热的改善。解决方案：在高电位侧的功率MOS芯片5，低电位侧的功率MOS芯片7和用于驱动形成在这些芯片中的MOSFET栅极的IC芯片9通过倒装芯片焊接安装到安装在功率MOS芯片5和7的后表面上布置有散热片53和55。散热器55在两处固定在安装板3上。用于驱动的功率MOS芯片5,7和用于驱动的IC芯片9由树脂构件61作为一个封装密封。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2002222916A PRESSURE WELDED SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2002222916A
公开(公告)日：2002-08-09
申请号：JP2001015044
申请日：2001-01-23
申请人： TOSHIBA CORP
发明人： MIYAKE EITARO , ENDO YOSHINORI , OMURA ICHIRO , DOMON TOMOKAZU
IPC分类号： H01L29/74 , H01L21/60 , H01L23/051 , H01L25/07 , H01L25/18 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a pressure welded semiconductor device that allows reduction in inductance and the enhancement of ease of assembly. SOLUTION: The pressure welded semiconductor device 1 is provided with at least a common control signal/principal current board 30, conductive connecting bodies 40, and conductive elastic bodies 45. The common control signal/principal current board 30 is provided with principal current wiring layers 320, 322, and 324 electrically connected with the first main electrodes on semiconductor chips 70, and control signal wiring layers 321 and 323 electrically connected with control electrodes. The principal current wiring layer 324 is electrically and mechanically connected with a first common main power supply board 10 with conductive elastic bodies 45 and the conductive connecting bodies 40 in-between. For example, screw members are used for the conductive connecting bodies 40 and washers are used for the conductive elastic bodies 45.

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