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1. 发明专利

JP2013150006A Light-emitting device 审中-公开
标题翻译：发光装置
公开(公告)号：JP2013150006A
公开(公告)日：2013-08-01
申请号：JP2013085925
申请日：2013-04-16
申请人： Toshiba Corp , 株式会社東芝
发明人： ISOMOTO KENJI , FURUKAWA CHISATO
IPC分类号： H01L33/16 , C30B29/40 , H01L33/30
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting device that allows reduction in variation in characteristic distribution in a wafer surface.SOLUTION: A light-emitting device includes: a GaP substrate in which Zn and Si having a concentration lower than the Zn concentration and having a concentration larger than or equal to 1×10cmand lower than or equal to 1.5×10cmare doped; and a stack formed on the GaP substrate, having at least a light-emitting layer, and containing In(GaAl)P (where, 0≤x≤1 and 0≤y≤1). The GaP substrate can transmit emission light from the light-emitting layer.
摘要翻译：要解决的问题：提供一种能够减少晶片表面的特性分布的变化的发光装置。解决方案：发光装置包括：GaP衬底，其中Zn和Si的浓度低于Zn浓度并且具有大于或等于1×10cm的浓度并且低于或等于1.5×10cm的掺杂; 和形成在GaP基板上的堆叠体，其至少具有发光层，并且含有In（GaAl）P（其中，0≤x≤1且0≤y≤1）。 GaP衬底可以发射来自发光层的发射光。

2. 发明专利

JP2010219320A Method of manufacturing light-emitting element and light-emitting element 审中-公开
标题翻译：制造发光元件和发光元件的方法
公开(公告)号：JP2010219320A
公开(公告)日：2010-09-30
申请号：JP2009064651
申请日：2009-03-17
申请人： Toshiba Corp , 株式会社東芝
发明人： ISOMOTO KENJI , FURUKAWA CHISATO
IPC分类号： H01L33/30 , H01L21/02 , H01L21/205
CPC分类号： C30B29/40 , C30B23/02 , C30B25/18 , C30B29/42 , C30B29/44 , H01L33/0079 , H01L33/025 , H01L33/16
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a light-emitting element capable of reducing the fluctuation of characteristic distribution in a wafer plane, and the light-emitting element. SOLUTION: The method includes steps of: preparing a first inclined substrate cut out from a single crystal ingot pulled up in a direction inclined to a first plane orientation by slicing the ingot in a direction substantially vertical to the pull-up direction; preparing a second inclined substrate with a principal plane in a plane orientation substantially parallel to that of the first inclined substrate; growing a lamination body having a light-emitting layer on the second inclined substrate; and adhering the lamination body and the first inclined substrate while superposing and heating them, then removing the second inclined substrate. The plane orientation of the first inclined substrate is one of a plain orientation inclined from (100) plane to a [011] direction and a plain orientation inclined from a (-100) plane to a [0-1-1] direction, and the plane orientation of the second inclined substrate is the other of the plain orientation inclined from a (100) plane to the [011] direction and the plain orientation inclined from the (-100) plane to the [0-1-1] direction. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种能够减少晶片平面中的特性分布的波动和发光元件的发光元件的制造方法。解决方案：该方法包括以下步骤：通过在与上拉方向基本垂直的方向上切割锭来制备从沿着与第一平面取向倾斜的方向上拉的单晶锭切出的第一倾斜基板; 准备具有基本上平行于第一倾斜衬底的平面取向的主平面的第二倾斜衬底; 在所述第二倾斜基板上生长具有发光层的层压体; 并且在层叠体和第一倾斜基板重叠加热的同时粘合，然后除去第二倾斜基板。第一倾斜基板的平面取向是从（100）面向[011]方向倾斜的平坦取向和从（-100）面向[0-1-1]方向倾斜的平坦取向的平面取向，以及第二倾斜基板的平面取向是从（100）面向[011]方向倾斜的平坦取向中的另一个，并且平面取向从（-100）面倾斜到[0-1-1]方向。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2006032837A Semiconductor luminous element 审中-公开
标题翻译：半导体元器件
公开(公告)号：JP2006032837A
公开(公告)日：2006-02-02
申请号：JP2004212885
申请日：2004-07-21
申请人： Toshiba Corp , 株式会社東芝
发明人： NITTA KOICHI , NAKAMURA TAKAFUMI , ISOMOTO KENJI
IPC分类号： H01L33/06 , H01L33/14 , H01L33/30 , H01L33/40
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor luminous element that never shows thyristor characteristics. SOLUTION: The semiconductor luminous element is provided with a first trap relaxing layer 1 adhered onto a GaP substrate 100 through a first adhesive layer 101, a first clad layer 103 laminated and formed on the first trap relaxing layer 102, a luminous layer 104 laminated and formed on the first clad layer 103, a second clad layer 105 laminated and formed on the luminous layer 104, a second trap relaxing layer 106 laminated and formed on the second clad layer 105, a GaP window layer 108 which adheres to the second trap relaxing layer 106 through a second adhesive layer 107 and is provided on the surface side of the luminous layer 104, and electrodes 109, 110. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：获得从不显示晶闸管特性的半导体发光元件。解决方案：半导体发光元件设置有通过第一粘合层101粘合到GaP基板100上的第一陷阱缓和层1，层叠并形成在第一陷阱缓和层102上的第一覆盖层103，发光层 104层叠并形成在第一包层103上，层叠并形成在发光层104上的第二包覆层105，层叠并形成在第二包层105上的第二陷阱缓和层106，GaP窗口层108，第二陷阱缓和层106穿过第二粘合剂层107并且设置在发光层104的表面侧以及电极109,110上。（C）2006，JPO和NCIPI

4. 发明专利

JPH10189562A COMPOUND SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH10189562A
公开(公告)日：1998-07-21
申请号：JP27921197
申请日：1997-10-13
申请人： TOSHIBA ELECTRONIC ENG , TOSHIBA CORP
发明人： FURUKAWA CHISATO , ISHIKAWA MASAYUKI , SUGAWARA HIDETO , ISOMOTO KENJI
IPC分类号： H01L21/205 , H01L21/31 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a compound semiconductor device and a method for manufacturing the same by decreasing the number of manufacturing processes and protecting the surface of a growth layer to improve quality. SOLUTION: A substrate 21 is placed in a deposition chamber, and a GaN buffer layer, an n-GaN layer, an InGaN active layer, a p-AlGaN layer and a p -GaN contact layer are grown by MOCVD method using growth materials of TMG(trimethyl gallium), TMI(trimethyl indium), TMA(trimethyl aluminum), NH3 gas, and SiH4 gas. SiH4 gas is supplied with the compound semiconductor device placed in the deposition chamber to successively grow a protective thin film on the surface of the p -GaN contact layer.

5. 发明专利

JPH1098213A SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 失效
公开(公告)号：JPH1098213A
公开(公告)日：1998-04-14
申请号：JP20282097
申请日：1997-07-29
申请人： TOSHIBA CORP
发明人： ISOMOTO KENJI , SUGAWARA HIDETO , NITTA KOICHI
IPC分类号： H01L33/06 , H01L33/32 , H01L33/36 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To improve ohmic characteristics, lower the operating voltage and increase light extraction efficiency by providing a semiconductor light-emitting device, wherein an oxide film is prevented from being formed on the surface of a p-type contact layer. SOLUTION: An n-type contact layer 10 and a p-type contact layer 12 are formed with a light-emitting layer, including Inx Aly Ga1-x-y (0

6. 发明专利

JP2003100705A DEVICE FOR RECOVERING ELEMENT IN COMPOUND SEMICONDUCTOR, METHOD FOR RECOVERING ELEMENT, METHOD FOR DECOMPOSING AND REFINING ELEMENT, DEVICE AND METHOD FOR ETCHING COMPOUND SEMICONDUCTOR, AND METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：JP2003100705A
公开(公告)日：2003-04-04
申请号：JP2001298401
申请日：2001-09-27
申请人： TOSHIBA CORP
发明人： KITA TORU , KINUGAWA YOSHIYUKI , NISHIWAKI WAKANA , AKAIKE YASUHIKO , ISOMOTO KENJI , ISHIKAWA HIROCHIKA , FURUKAWA KAZUYOSHI , WASHITSUKA SHOICHI
IPC分类号： C22B7/00 , C22B9/02 , C22B9/04 , C22B30/04 , C22B58/00 , H01L21/302 , H01L21/306 , H01L33/30 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To recover elements with high purity in a compound semiconductor substrate without exposing a film formed on the compound semiconductor substrate to an etchant. SOLUTION: While an atmosphere surrounding a compound semiconductor substrate is substituted by an inert atmosphere, the compound semiconductor substrate is hearted so as to be thermally decomposed into solid state power elements and liquid state elements. The solid state powder elements are collected, and then, the liquid state elements are collected.

7. 发明专利

JP2001081569A VAPOR PHASE GROWTH SYSTEM 失效
公开(公告)号：JP2001081569A
公开(公告)日：2001-03-27
申请号：JP26191699
申请日：1999-09-16
申请人： TOSHIBA CORP
发明人： ISHIKAWA HIROCHIKA , KATAOKA TAKASHI , ISOMOTO KENJI , KINUGAWA YOSHIYUKI , SATO HIROSUKE
IPC分类号： H01L21/205 , C23C16/455
摘要： PROBLEM TO BE SOLVED: To provide a vapor phase glowth system capable of executing the measurement of temperature in a wide range at the optional position of a sub strate in a vapor phase growth system for feeding plural kinds of gaseous starting materials high in reactivity with good accuracy. SOLUTION: In a vapor phase growth system provided with a temperature measuring means 13 measuring the temperature of a substrate 2 placed on a substrate holder 3 or of the substrate holder 3 in a non-contact state and a window 14 provided on the part in which a member composing a reaction furnace 1 and an electromagnetic wave path for measuring temperature to the substrate 2 are crossed, at least two among plural gas diffusion chambers 10 are arranged on the face parallel to the substrate plating face of the substrate holder 3 in a row.

8. 发明专利

JPH1174560A GAN COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND ITS MANUFACTURE 失效
公开(公告)号：JPH1174560A
公开(公告)日：1999-03-16
申请号：JP23439097
申请日：1997-08-29
申请人： TOSHIBA CORP
发明人： ISHIKAWA HIROCHIKA , ISOMOTO KENJI
IPC分类号： C23C16/34 , H01L33/12 , H01L33/32 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To improve light emitting characteristics and electric characteristics, by providing a butter layer composed of a compound semiconductor that contains at least either phosphorus (P) or arsenic (As) on a substrate. SOLUTION: For instance, on a substrate 1, an n-type GaN1-x Px (or GaN1-y Asy ) low temperature buffer layer 2, an n-type GaN1-x Px (or GaN1-y Asy ) layer 3, an n-type GaN layer 4, an InGaN active layer 5, a p-type GaN layer 6, are formed in this order. On the n-type GaN1-x Px (or GaN1-y Asy ) layer 3 which is partially exposed by etching, an n-type electrode 7 is formed, while on the p-type GaN layer 6, a p-type electrode 8 is formed, and the pair of electrodes are constituted. The difference between the lattice constant of the InGaN layer can be reduced by the composition (x) of the buffer layer or the increase of (y). Therefore, the distortion of a light emitting layer can be reduced and the high quality light emitting layer is obtained.

9. 发明专利

JPH1041549A LIGHT EMITTING ELEMENT AND ITS MANUFACTURE 失效
公开(公告)号：JPH1041549A
公开(公告)日：1998-02-13
申请号：JP10480497
申请日：1997-04-22
申请人： TOSHIBA ELECTRONIC ENG , TOSHIBA CORP
发明人： FURUKAWA CHISATO , ISHIKAWA MASAYUKI , SUGAWARA HIDETO , ISOMOTO KENJI
IPC分类号： H01L33/12 , H01L33/32 , H01S5/00 , H01S5/323 , H01L33/00 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device using a known gallium nitride compound semiconductor, which can avoid reduction of throughput and deterioration of a grown layer caused by formation of an undoped single crystalline GaN layer, for the purpose of improving the crystallization of a high- concentration N type layer under an active layer. SOLUTION: A light emitting element includes gallium nitride compound semiconductor layers 12 to 14 of an N type formed on a substrate 11, and a gallium nitride compound semiconductor layer 16 of a P type formed above the N type layers. The N type gallium nitride compound semiconductor layers include a region 13 in which an impurity concentration increases gradually from the substrate side according to the film thickness. In the method for fabricating the light emitting element, the gallium primary nitride compound semiconductor layer 12 is formed on the substrate in a reaction chamber, a silane gas as the doping gas is introduced onto the gallium primary nitride compound semiconductor layer to form the gallium secondary nitride compound semiconductor layer 13 doped with N type impurity, by changing the amount of silane gas introduced into the reaction chamber to increase its impurity concentration gradually from its substrate side.

10. 发明专利

JPH10294490A P-TYPE GALLIUM NITRIDE COMPOUND SEMICONDUCTOR, MANUFACTURE THEREOF, AND BLUE LIGHT-EMITTING ELEMENT 失效
公开(公告)号：JPH10294490A
公开(公告)日：1998-11-04
申请号：JP10050697
申请日：1997-04-17
申请人： TOSHIBA ELECTRONIC ENG , TOSHIBA CORP
发明人： FURUKAWA CHISATO , ISHIKAWA MASAYUKI , SUGAWARA HIDETO , ISOMOTO KENJI
IPC分类号： H01L21/205 , H01L33/06 , H01L33/32 , H01L33/36 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To activate a p-type impurity that is added into a gallium nitride compound semiconductor more efficiently, by performing setting so that a larger fixed amount of inert gas than the specific amount of p-type impurity being added into gallium nitride compound semiconductor film can be electrically activated. SOLUTION: A GaN film including a p-type impurity is formed on a sapphire substrate. Then, an annealing treatment is performed to a substrate where the GaN film is formed. A substrate 30 is installed at the center of a crystal tube, and the inside of the crystal tube is substituted with N2 . While a constant amount of N2 that flows in parallel on a substrate surface is being supplied, a substrate temperature is increased and the temperature is maintained. After that, the temperature of a substrate is cooled to a room temperature. The ratio of an acceptor concentration to the Mg impurity concentration in a GaN film is increased by approximately 1%, thus obtaining a stable and high activation rate.

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