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1. 发明专利

JP2012185080A Reactivity control facility and fast reactor 审中-公开
标题翻译：反应活性控制设施和快速反应器
公开(公告)号：JP2012185080A
公开(公告)日：2012-09-27
申请号：JP2011049275
申请日：2011-03-07
申请人： Toshiba Corp , 株式会社東芝
发明人： KOBAYASHI HIDEO , MATSUMOTO KOJI , INATOMI TAKAYA , SUZUKI TOSHIYUKI , NAKAMURA HIROSHI
IPC分类号： G21C7/10
CPC分类号： Y02E30/34 , Y02E30/39
摘要： PROBLEM TO BE SOLVED: To assure soundness of a neutron absorber and an insertion property of a reactor stop bar to improve reliability even in occurrence of an earthquake at suspended states of the neutron absorbers.SOLUTION: A reactivity control facility has: a reactivity control assembly 29 which is constituted by arranging a reactor stop bar 32 in a wrapper tube 31 provided at the center part of the reactor core 12 and arranging a plurality of neutron absorbers 33 in the surroundings of the reactor stop bar; a reactor stop bar drive mechanism 43 which drops an inner extension tube 53 to separate the reactor stop bar 32 held by a gripper 55 at the lowermost end of an outer extension tube 54 including the inner extension tube in a scrum; and a plurality of neutron absorber drive mechanisms 44 which hold handling heads 42 of handling rods 41 of the neutron absorbers 33 with a gripper 66 at the lowermost end of an inner extended shaft 60 to be suspended, and individually lift up and down the neutron absorbers, in which a part of the handling rods 41 of the neutron absorbers 33 is constituted of wire 70 with flexibility capable of absorbing displacement in the horizontal direction at suspended states of the neutron absorbers.
摘要翻译：要解决的问题：为了确保中子吸收器的良好性和反应器止动杆的插入性能，即使在发生中子吸收器的悬浮状态的地震时也提高可靠性。反应性控制设备具有：反应性控制组件29，其通过将反应器止动杆32设置在设置在反应堆堆芯12的中心部分的包裹管31中并将多个中子吸收体33布置在反应堆周围的停止条; 反应器停止棒驱动机构43，其将内部延伸管53落下，以在由包括内部延伸管的外部延伸管54的最下端分离由夹持器55保持的反应器止动杆32; 以及多个中子吸收器驱动机构44，其在内延伸轴60的最下端用夹具66保持中子吸收器33的操纵杆41的操纵头42，并且单独地提升和降低中子吸收体其中中子吸收器33的处理杆41的一部分由具有能够吸收中子吸收体的悬挂状态的水平方向的位移的柔性的导线70构成。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2012009192A Cold-cathode tube lighting device and cold-cathode tube lighting method 审中-公开
标题翻译：冷阴极管照明装置和冷阴极管照明方法
公开(公告)号：JP2012009192A
公开(公告)日：2012-01-12
申请号：JP2010142352
申请日：2010-06-23
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKAMURA HIROSHI
IPC分类号： H05B37/02
摘要： PROBLEM TO BE SOLVED: To provide a cold-cathode tube lighting device and a cold-cathode tube lighting method which enable quick and reliable lighting of a cold-cathode tube even under a low-temperature environment by properly compensating a temperature of the cold-cathode tube by a simple constitution and low power consumption.SOLUTION: The cold-cathode tube lighting device comprises: a temperature sensor 5 for detecting the environmental temperature of a cold-cathode tube 2; and a processor 7 which, when the environmental temperature detected by the temperature sensor 5 is lower than a first predetermined temperature, generates heat by predetermined calculation and heats the cold-cathode tube 2 using the generated heat.
摘要翻译：要解决的问题：提供一种冷阴极管照明装置和冷阴极管照明方法，其能够即使在低温环境下也可以通过适当地补偿冷阴极管的温度来快速可靠地照明冷阴极管冷阴极管采用简单的结构和低功耗。解决方案：冷阴极管照明装置包括：用于检测冷阴极管2的环境温度的温度传感器5; 以及处理器7，当由温度传感器5检测到的环境温度低于第一预定温度时，通过预定的计算产生热量，并使用所产生的热量加热冷阴极管2。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2010276602A Fast reactor 审中-公开
标题翻译：快速反应器
公开(公告)号：JP2010276602A
公开(公告)日：2010-12-09
申请号：JP2010101267
申请日：2010-04-26
申请人： Toshiba Corp , 株式会社東芝
发明人： INATOMI TAKAYA , EBIHARA AYANO , NAKAMURA HIROSHI , KOBAYASHI HIDEO , HASEGAWA KATSUJI
IPC分类号： G21C1/02 , G21C15/02
CPC分类号： G21C1/322 , G21C1/02 , G21C11/022 , G21C15/02 , G21C15/247 , Y02E30/34
摘要： PROBLEM TO BE SOLVED: To provide a fast reactor having high sealability of primary coolant, as well as, high maintainability. SOLUTION: The fast reactor 1 includes a reactor vessel 7 containing a core 2 and the primary coolant 21; a core support 13 which is arranged in the reactor vessel 7 and supports the core 2 from below; and a partition 6 arranged above the core support 13 and extends upward while laterally surrounding the core 2. An intermediate heat exchanger 15 which cools the primary coolant 21 and an electromagnetic pump 14 which pressurizes the cooled primary coolant 21 are arranged between the inner surface of the reactor vessel 7 and the partition 6. A neutron shield 8, supported by an upper support plate 29 from above, is arranged below the electromagnetic pump 14. The upper support plate 29 is provided with an opening 29a, and a coolant guide mechanism 17 which guides the pressurized primary coolant 21 from the electromagnetic pump 14 to the neutron shield 8 side via the opening 29a of the upper supporting plate 29 is provided between the electromagnetic pump outlet 14b and the upper support plate 29. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一次冷却剂具有高密封性的快速反应器以及高可维护性。解决方案：快堆1包括容纳核心2和主冷却剂21的反应器容器7; 芯支撑件13布置在反应器容器7中并从下方支撑芯2; 以及布置在芯支撑件13上方并在横向包围芯2的同时向上延伸的分隔件6.冷却主冷却剂21的中间热交换器15和对冷却的一次冷却剂21加压的电磁泵14设置在反应堆容器7和分隔件6.由电磁泵14的下方配置有由上部支撑板29支撑的中子屏蔽8.上部支撑板29设置有开口29a和冷却剂引导机构17 其通过上支撑板29的开口29a将加压的主冷却剂21从电磁泵14引导到中子屏蔽8侧设置在电磁泵出口14b和上支撑板29之间。版权所有（C））2011，JPO＆INPIT

4. 发明专利

JP2009266351A Semiconductor memory device and method of controlling the same 审中-公开
标题翻译：半导体存储器件及其控制方法
公开(公告)号：JP2009266351A
公开(公告)日：2009-11-12
申请号：JP2008117784
申请日：2008-04-28
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKANO TAKESHI , NAKAMURA HIROSHI , HOSONO KOJI
IPC分类号： G11C16/06 , G11C16/04
CPC分类号： G11C16/08
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor memory device having improved operation reliability, and a method of controlling the same. SOLUTION: The semiconductor memory device includes a transfer circuit 30 and a control circuit 31. The transfer circuit 30 includes a MOS transistor 42 having a source to which a first voltage is applied, and a MOS transistor 45 having a gate connected to the drain of the MOS transistor 42, and to which a first voltage is transfered, a source to which a second voltage is applied, and a drain connected to a load. The control circuit 31 turns the MOS transistor 42 on and off. The control circuit 31 turns the MOS transistor 42 on to transfer the second voltage to the load, and turns the MOS transistor 42 off during the transfer to set the gate of the MOS transistor 45 to a floating state at the first voltage. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有改善的操作可靠性的半导体存储器件及其控制方法。解决方案：半导体存储器件包括转移电路30和控制电路31.转移电路30包括具有施加第一电压的源极的MOS晶体管42和具有栅极的MOS晶体管45 MOS晶体管42的漏极，第一电压被传送到其上，施加第二电压的源极和连接到负载的漏极。控制电路31使MOS晶体管42接通和断开。控制电路31接通MOS晶体管42，将第二电压转移到负载，并且在传输期间使MOS晶体管42截止，以将MOS晶体管45的栅极设置为第一电压的浮置状态。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2008128574A Heat exchanger 审中-公开
标题翻译：热交换器
公开(公告)号：JP2008128574A
公开(公告)日：2008-06-05
申请号：JP2006314864
申请日：2006-11-21
申请人： Toshiba Corp , 株式会社東芝
发明人： INATOMI TAKAYA , NAKAMURA HIROSHI , AOKI KAZUYOSHI , MARUYAMA SHIGEKI
IPC分类号： F28F3/04 , F28F21/08
CPC分类号： F28D9/0037 , F28F3/04 , F28F2250/102
摘要： PROBLEM TO BE SOLVED: To provide a heat exchanger, achieving compactness under the high-temperature and high-pressure conditions, and having high performance and excellent structural soundness.
SOLUTION: This plate stacked type heat exchanger has such compactness that the exchange calorie per unit volume is 10 MWt/m
3 or more. The heat exchanger is used under such high-temperature and high-pressure condition that a differential pressure between the primary system fluid and the secondary system fluid ranges from 4 to 7 MPa, and the highest working temperature ranges from 500 to 900°C. In the heat exchanger, the board thickness of a metal plate is 0.3 times or more as large as the passage equivalent diameter, and the inter-passage pitch along the board thickness direction of the metal plate is 0.5 times as large as the passage equivalent diameter.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种热交换器，在高温高压条件下实现紧凑性，并且具有高性能和优异的结构稳定性。解决方案：该板式堆叠式热交换器具有如下的紧凑性，使得每单位体积的交换热量为10MWt / m 3 / SP>以上。在这种高温高压条件下使用热交换器，使得主系统流体和二次系统流体之间的压差为4至7MPa，最高工作温度范围为500至900℃。在热交换器中，金属板的板厚为通道当量直径的0.3倍以上，沿金属板的板厚方向的通道间距为通道当量直径的0.5倍。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2008122248A Fast reactor 审中-公开
标题翻译：快速反应器
公开(公告)号：JP2008122248A
公开(公告)日：2008-05-29
申请号：JP2006306809
申请日：2006-11-13
申请人： Toshiba Corp , 株式会社東芝
发明人： INATOMI TAKAYA , SUZUKI TOSHIYUKI , NAKAMURA HIROSHI , FUKAMICHI KENJIRO
IPC分类号： G21C1/02 , G21C13/073
CPC分类号： G21C1/02 , Y02E30/34
摘要： PROBLEM TO BE SOLVED: To provide a fast reactor having high structural reliability and which is superior in safety.
SOLUTION: The fast reactor 1 comprises a reactor vessel 7 for storing a core 2 and primary coolant 5, an intermediate heat exchanger 15 arranged inside the reactor vessel 7, and transferring heat energy of the primary coolant 5 heated by the core 2 to secondary coolant 45, and an upper barrel 15a of the intermediate heat exchanger, disposed in the upper part of the intermediate heat exchanger 15. An upper plug 10, having neutron-shielding function, and heat-shielding function is disposed above the upper barrel 15a of the intermediate heat exchanger. A thermal expansion absorbing means 46 that absorbs the axial and radial thermal expansion of the upper barrel 15a of the intermediate heat exchanger and forms a reactor cover gas boundary is disposed in between the upper barrel 15a of the intermediate heat exchanger and the upper plug 10.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供具有高结构可靠性并且安全性优异的快速反应器。解决方案：快堆1包括用于储存核心2和一次冷却剂5的反应器容器7，布置在反应容器7内部的中间热交换器15，并传递由核心2加热的一次冷却剂5的热能设置在中间热交换器15的上部的二次冷却剂45和中间热交换器的上筒15a。具有中子屏蔽功能的上塞子10和隔热功能设置在上筒体 15a的中间热交换器。吸收中间热交换器的上筒15a的轴向和径向热膨胀并形成反应器盖气体边界的热膨胀吸收装置46设置在中间热交换器的上筒15a和上塞10之间。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2007323782A Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：JP2007323782A
公开(公告)日：2007-12-13
申请号：JP2006155407
申请日：2006-06-02
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKAGAWA MICHIO , NAKAMURA HIROSHI
IPC分类号： G11C16/06
CPC分类号： G11C16/08
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device in which Vpp can be transferred without voltage drop of Vth (threshold voltage) of a transfer transistor, also processes are decreased and a cost is reduced by using normal LVP (low voltage P type transistor), in a transfer circuit for transferring Vpp selectively or a decode circuit. SOLUTION: A bi-directional diode of which the threshold value is approximately Vdd is inserted between a gate and a drain using the LVP (low voltage P type transistor) instead of HVP (high voltage P type transistor) of a transfer circuit. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种不传输晶体管的Vth（阈值电压）的电压降而不传输Vpp的非易失性半导体存储器件，通过使用正常的LVP（低）来降低处理并降低成本电压P型晶体管），用于选择性传输Vpp的传输电路或解码电路。解决方案：使用LVP（低电压P型晶体管）代替传输电路的HVP（高压P型晶体管）将阈值近似为Vdd的双向二极管插入栅极和漏极之间。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2006313925A Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：JP2006313925A
公开(公告)日：2006-11-16
申请号：JP2006175635
申请日：2006-06-26
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKAMURA HIROSHI , ARITOME SEIICHI , IMAMIYA KENICHI , OHIRA HIDEKO , TAKEUCHI TAKESHI , SHIMIZU KAZUHIRO , NARITA KAZUHITO
IPC分类号： H01L21/8247 , G11C16/04 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of preventing a failure caused by deterioration of etching accuracy in a region at a memory cell array end. SOLUTION: The semiconductor memory device includes first blocks 2-0, 2-N composed of first memory cell units to which a plurality of memory cells M 1 to M 8 are connected, and second blocks 2-1 to 2-(N-1) composed of second memory cell units to which a plurality of memory cells M 1 to M 8 are connected. A memory cell array 2 is constituted by disposing the first block at opposite ends and the second block at other portions. Constitution of the first memory cell unit on the side of the memory cell array end is different from that of the second memory cell unit. It is possible to prevent a failure caused by deterioration of etching accuracy of the region at the memory cell array end, and to realize high yield operation and high reliability operation substantially without causing an increase of a chip size. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够防止由存储单元阵列端的区域中的蚀刻精度劣化引起的故障的半导体存储器件。解决方案：半导体存储器件包括由第一存储单元单元组成的第一块2-0，2-N，多个存储单元M 1 至M SB 8 >与第二存储单元组合的第二块2-1至2-（N-1），多个存储单元M SB1至SBB < 被连接。存储单元阵列2通过将第一块布置在相对端部而将第二块布置在其它部分而构成。存储单元阵列端侧的第一存储单元单元的结构与第二存储单元单元的结构不同。可以防止由于存储单元阵列端的区域的蚀刻精度的劣化而导致的故障，并且实质上不会导致芯片尺寸的增加而实现高产量操作和高可靠性操作。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2006164408A Nonvolatile semiconductor memory device, and data erasure method therefor 审中-公开
标题翻译：非易失性半导体存储器件及其数据擦除方法
公开(公告)号：JP2006164408A
公开(公告)日：2006-06-22
申请号：JP2004354943
申请日：2004-12-08
申请人： Toshiba Corp , 株式会社東芝
发明人： FUJITA NORIHIRO , NAKAMURA HIROSHI
IPC分类号： G11C16/02 , G11C16/04
CPC分类号： G11C16/107 , G11C16/0483 , G11C16/10 , G11C16/16 , G11C16/3445
摘要： PROBLEM TO BE SOLVED: To make a nonvolatile semiconductor memory device high in operating speed. SOLUTION: The nonvolatile semiconductor memory device of this invention has a memory cell array consisting of a plurality of memory blocks in which electrically rewritable memory cells are arranged and performs a pre-program in which thresholds of all the memory cells in a selected memory block are considered as positive before erasing pieces of data about all the memory cells in the selected memory block among the plurality of memory blocks. COPYRIGHT: (C)2006,JPO&NCIPI

10. 发明专利

JP2006156786A Electronic equipment 审中-公开
标题翻译：电子设备
公开(公告)号：JP2006156786A
公开(公告)日：2006-06-15
申请号：JP2004346560
申请日：2004-11-30
申请人： Toshiba Corp , 株式会社東芝
发明人： SETO MASA , NAKAMURA HIROSHI
IPC分类号： H05K7/20 , G06F1/20
CPC分类号： G06F1/203 , G06F2200/202
摘要： PROBLEM TO BE SOLVED: To obtain electronic equipment effectively thinned. SOLUTION: A portable computer 10 has a first box body 21, a second box body 51, and an air blower device 30. The first box body 21 has an air-blower housing 26 while housing a CPU 24. The second box body 51 is connected rotatably to the air-blower housing 26. The air blower device 30 is housed in the air-blower housing 26, and sends air into the first box body 21. The air blower device 30 is extended in the cross direction B of the first box body 21 and the second box body 51 while having a plurality of blades 31b arranged in a concentric circle shape H. The air blower device 30 sucks air from the rotating direction of the rotating shaft G of a plurality of the blades 31b, and discharges air in the direction crossing with the rotating shaft G. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：获得有效减薄的电子设备。便携式计算机10具有第一盒体21，第二箱体51和鼓风装置30.第一盒体21具有鼓风机壳体26，同时容纳CPU 24.第二盒主体51可旋转地连接到鼓风机壳体26.鼓风机装置30容纳在鼓风机壳体26中，并且将空气送入第一箱体21.鼓风装置30沿横向方向B延伸同时具有以同心圆形H布置的多个叶片31b。吹风装置30从多个叶片31b的旋转轴G的旋转方向吸入空气并且在与旋转轴G交叉的方向上排出空气。版权所有（C）2006，JPO＆NCIPI

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