专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2012064818A Magnetoresistive element 有权
标题翻译：磁电元件
公开(公告)号：JP2012064818A
公开(公告)日：2012-03-29
申请号：JP2010208616
申请日：2010-09-16
申请人： Toshiba Corp , 株式会社東芝
发明人： KITAGAWA EIJI , DAIBO TATATOMI , KAI TADASHI , NAGASE TOSHIHIKO , NOMA KENJI , YODA HIROAKI
IPC分类号： H01L27/105 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L29/82 , H01L43/08
CPC分类号： H01L43/02 , G01R33/091 , G01R33/093 , G11B5/66 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/30 , H01L27/228 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To reduce the write current.SOLUTION: A magnetoresistive element 10 comprises: a recording layer 13 having magnetic anisotropy in the direction normal to a film surface and a variable magnetization direction; a reference layer 15 having magnetic anisotropy in the direction normal to a film surface and a variable magnetization direction; an intermediate layer 14 provided between the recording layer 13 and the reference layer 15; and an underlying layer 12 provided on a surface of the recording layer 13 opposite from a surface where the intermediate layer 14 is provided. The recording layer 13 has a magnetic layer 13C provided on the intermediate layer 14 side and containing CoFe as a main component, and a magnetic layer 13A provided on the underlying layer 12 side and containing CoFe as a main component, where the concentration of Fe in the magnetic layer 13C is higher than the concentration of Fe in the magnetic layer 13A. The underlying layer 12 consists of a nitride compound.
摘要翻译：要解决的问题：减少写入电流。解决方案：磁阻元件10包括：在垂直于膜表面的方向和可变的磁化方向上具有磁各向异性的记录层13; 在垂直于膜表面的方向和可变的磁化方向上具有磁各向异性的参考层15; 设置在记录层13和参考层15之间的中间层14; 以及设置在与设置中间层14的表面相反的记录层13的表面上的下层12。记录层13具有设置在中间层14侧并含有CoFe作为主要成分的磁性层13C和设置在下层12侧并含有CoFe作为主要成分的磁性层13A，其中Fe的浓度磁性层13C比磁性层13A中的Fe的浓度高。底层12由氮化物组成。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2011071352A Magnetoresistive element and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2011071352A
公开(公告)日：2011-04-07
申请号：JP2009221569
申请日：2009-09-25
申请人： National Institute Of Advanced Industrial Science & Technology , Toshiba Corp , 株式会社東芝 , 独立行政法人産業技術総合研究所
发明人： KAI TADASHI , NISHIYAMA KATSUYA , NAGASE TOSHIHIKO , YOSHIKAWA MASAHISA , KITAGAWA EIJI , DAIBO TATATOMI , NAGAMINE MAKOTO , NAKAYAMA MASAHIKO , SHIMOMURA NAOHARU , YODA HIROAKI , YAKUSHIJI HIROSHI , YUASA SHINJI , KUBOTA HITOSHI , NAGAHAMA TARO , FUKUSHIMA AKIO , ANDO KOJI
IPC分类号： H01L43/08 , G11C11/15 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105
CPC分类号： H01L43/10 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228 , Y10S977/935
摘要： PROBLEM TO BE SOLVED: To provide a spin-transfer-torque writing type magnetoresistive element with thermal stability and low current consumption. SOLUTION: The magnetoresistive element includes a first magnetic layer 3 which has an easy axis of magnetization in a direction vertical to a film surface and has variable magnetization direction, a second magnetic layer 2 which has an easy axis of magnetization in the direction vertical to the film surface, and a first nonmagnetic layer 4 provided between the first magnetic layer 3 and second magnetic layer 2. The first magnetic layer 3 is made of a ferromagnetic material which includes a CoPd alloy or CoPt alloy having Co and Pd or Co and Pt laminated alternately on an atomically close-packed plane thereof, and has a (c) axis in the direction vertical to the film surface. The magnetization direction of the first magnetic layer 3 varies with a bidirectional current penetrating the first magnetic layer 3, first nonmagnetic layer 4 and second magnetic layer 2. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供具有热稳定性和低电流消耗的自旋转矩扭矩书写型磁阻元件。解决方案：磁阻元件包括第一磁性层3，其在垂直于膜表面的方向上具有易磁化轴并且具有可变的磁化方向;第二磁性层2，其在方向上具有易磁化轴设置在第一磁性层3和第二磁性层2之间的第一非磁性层4.第一磁性层3由包含Co和Pd或Co的CoPd合金或CoPt合金的铁磁材料制成并且Pt在其原子紧密堆积的平面上交替层压，并且在垂直于膜表面的方向上具有（c）轴。第一磁性层3的磁化方向随着穿过第一磁性层3，第一非磁性层4和第二磁性层2的双向电流而变化。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2009081314A Magnetoresistive element, and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2009081314A
公开(公告)日：2009-04-16
申请号：JP2007250283
申请日：2007-09-26
申请人： Toshiba Corp , 株式会社東芝
发明人： NAGASE TOSHIHIKO , YOSHIKAWA MASAHISA , KITAGAWA EIJI , NISHIYAMA KATSUYA , DAIBO TATATOMI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , H01F10/13 , H01F10/14 , H01F10/16 , H01F10/28 , H01F10/30 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/10
CPC分类号： H01L43/10 , B82Y25/00 , G11C11/161 , H01F10/123 , H01F10/3254 , H01F10/3286 , H01L27/228
摘要： PROBLEM TO BE SOLVED: To secure a high magnetoresistance ratio and thermal disturbance resistance even when a memory cell is microfabricated. SOLUTION: A magnetoresistive element 10 includes a first underlying layer 23 having an NaCl structure and containing a nitride orienting in a (001) plane, a first magnetic layer 14 provided on the first underlying layer 23, having magnetic anisotropy perpendicular to a film surface, having an L1 0 structure, and containing a ferromagnetic alloy orienting in a (001) plane, a first nonmagnetic layer 16 provided on the first magnetic layer 14, and a second magnetic layer 17 provided on the first nonmagnetic layer 16 and having magnetic anisotropy perpendicular to a film surface. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：即使当存储器单元被微加工时，也可以确保高的磁阻比和热干扰电阻。解决方案：磁阻元件10包括具有NaCl结构并且包含在（001）面中定向的氮化物的第一下层23，设置在第一下层23上的第一磁性层14具有垂直于（001）面的磁性各向异性膜表面，具有L1 0 结构，并且包含在（001）面中定向的铁磁性合金，设置在第一磁性层14上的第一非磁性层16和设置在第一磁性层17上的第二磁性层17 第一非磁性层16并具有垂直于膜表面的磁各向异性。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2012195485A Magnetic storage element and nonvolatile storage device 有权
标题翻译：磁性存储元件和非易失存储器件
公开(公告)号：JP2012195485A
公开(公告)日：2012-10-11
申请号：JP2011059179
申请日：2011-03-17
申请人： Toshiba Corp , 株式会社東芝
发明人： SAIDA DAISUKE , AMANO MINORU , ITO JUNICHI , OSAWA YUICHI , KASHIWADA SAORI , KAMATA SHINGI , DAIBO TATATOMI
IPC分类号： H01L27/105 , H01L21/8246 , H01L29/82 , H01L43/08
CPC分类号： G11B5/66 , G11C11/161 , H01L27/228 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic storage element and a nonvolatile storage device in which flux reversal in write time occurs at higher speed.SOLUTION: According to an embodiment, a magnetic storage element provided with a laminated body is provided. The laminated body includes a first lamination part and a second lamination part. The first lamination part includes: a first ferromagnetic layer with magnetization fixed to a first direction having a vertical component with respect to a film surface; a second ferromagnetic layer with a magnetization direction variable in a direction perpendicular to the film surface; and a first non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer. The second lamination part includes: a third ferromagnetic layer with a magnetization direction variable in a direction parallel with the film surface; a fourth ferromagnetic layer with magnetization fixed to a second direction having a vertical component with respect to the film surface; and a second non-magnetic layer between the third ferromagnetic layer and the fourth ferromagnetic layer. In a plane having a normal line along a lamination axis, an outer edge of the fourth ferromagnetic layer has a portion outer than an outer edge of the first lamination part.
摘要翻译：要解决的问题：提供一种磁存储元件和非易失性存储装置，其中在较高速度下发生写入时间内的磁通反转。解决方案：根据一个实施例，提供一种设置有层压体的磁存储元件。层叠体包括第一层叠部和第二层叠部。第一层压部件包括：具有固定到第一方向的磁化的第一铁磁层，具有相对于膜表面的垂直分量; 第二铁磁层，其磁化方向在与膜表面垂直的方向上可变; 以及在第一铁磁层和第二铁磁层之间的第一非磁性层。第二层压部件包括：在与膜表面平行的方向上具有可变化磁化方向的第三铁磁层; 具有固定到第二方向的磁化的第四铁磁层，具有相对于膜表面的垂直分量; 以及在第三铁磁层和第四铁磁层之间的第二非磁性层。在沿着层叠轴线具有法线的平面中，第四铁磁层的外边缘具有比第一层叠部分的外边缘外的部分。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2010238769A Magnetoresistive element, and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2010238769A
公开(公告)日：2010-10-21
申请号：JP2009082741
申请日：2009-03-30
申请人： Toshiba Corp , 株式会社東芝
发明人： DAIBO TATATOMI , NAGASE TOSHIHIKO , KITAGAWA EIJI , YOSHIKAWA MASAHISA , NISHIYAMA KATSUYA , NAGAMINE MAKOTO , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , G11B5/39 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1659 , G11C11/1673 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive element which has vertical magnetic anisotropy and exhibits larger magnetoresistance effect.
SOLUTION: The magnetoresistive element 10 includes a stabilization layer 11, a nonmagnetic layer 13, a spin-polarization layer 12 provided between the stabilization layer 11 and the nonmagnetic layer 13, and having magnetic anisotropy in a direction perpendicular to a film surface, and a magnetic layer 14 provided on a side of the nonmagnetic layer 13 opposite to a side on which the spin-polarization layer 12 is provided. The stabilization layer 11 has a lattice constant smaller than that of the spin-polarization layer 12 in an in-plane direction. The spin-polarization layer 12 contains at least one or more elements selected from a group consisting of cobalt (Co) and iron (Fe), has a BCT (body-centered tetragonal) structure, and has a lattice constant ratio c/a of 1.10 to 1.35 when a direction perpendicular to the film surface is denoted by a c-axis and an in-plane direction is denoted by an a-axis.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供具有垂直磁各向异性并具有更大磁阻效应的磁阻元件。解决方案：磁阻元件10包括稳定层11，非磁性层13，设置在稳定层11和非磁性层13之间的自旋极化层12，并且在垂直于膜表面的方向上具有磁各向异性以及设置在与设置有自旋极化层12的一侧相反的非磁性层13侧的磁性层14。稳定层11的晶格常数小于自旋极化层12在面内方向的晶格常数。自旋极化层12含有选自由钴（Co）和铁（Fe）组成的组中的至少一种以上的元素，具有BCT（体心四方晶）结构，并具有晶格常数比c / a 当垂直于膜表面的方向由c轴表示并且面内方向由a轴表示时，为1.10至1.35。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2009239121A Magnetoresistive element and magnetic random access memory 审中-公开
标题翻译：磁性元件和磁性随机存取存储器
公开(公告)号：JP2009239121A
公开(公告)日：2009-10-15
申请号：JP2008084939
申请日：2008-03-27
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIKAWA MASAHISA , KITAGAWA EIJI , DAIBO TATATOMI , NAGAMINE MAKOTO , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , G11B5/39 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/10
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3909 , G11C11/161 , G11C11/1675 , H01F10/123 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01F41/307 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To permit spin implantation flux to be reversal, al at high TMR (tunnel magneto-resistance) ratio and low current. SOLUTION: Magneto-resistance effect element is provided with the stack structure of base layer 11, a first magnetic layer 12, a tunnel barrier layer 13 and a second magnetic layer 14. The remanent magnetization of the first and second magnetic layers 12, 14 faces a direction which is l to the film surfaces of them, and the magnetization direction is not changed in one of the first and second magnetic layers 12, 14, while the magnetization direction is variable in the other of them. The first magnetic layer 12 is a ferromagnetic metal, consisting of not less than one element selected from the first group of Co, Fe and Ni, as well as, not less than one element selected from a second group of Cu, Ag, Au, Pd, Pt, Ru, Rh, Ir and Os while the base layer 11 is a metal containing one element selected from among the third group of Al, Ni, Co, Fe, Mn, Cr and V or a metal containing more than two kinds of elements selected from among a third group. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了允许自旋注入通量反转，在高TMR（隧道磁阻）比和低电流下。解决方案：磁阻效应元件设置有基极层11，第一磁性层12，隧道势垒层13和第二磁性层14的堆叠结构。第一和第二磁性层12的剩余磁化强度 14表示与它们的膜表面1相对的方向，并且在第一和第二磁性层12,14中的一个中磁化方向不改变，而另一个磁化方向是可变的。第一磁性层12是由不少于一种选自Co，Fe和Ni的元素组成的铁磁性金属，以及不少于一种选自Cu，Ag，Au， Pd，Pt，Ru，Rh，Ir和Os，而基层11是含有选自第三组Al，Ni，Co，Fe，Mn，Cr和V中的一种元素的金属或含有两种以上的金属的选自第三组的元素。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009212156A Magnetoresistive element and magnetic memory using the same 审中-公开
标题翻译：磁性元件和使用它的磁记忆
公开(公告)号：JP2009212156A
公开(公告)日：2009-09-17
申请号：JP2008051176
申请日：2008-02-29
申请人： Toshiba Corp , 株式会社東芝
发明人： DAIBO TATATOMI , YOSHIKAWA MASAHISA , NAGASE TOSHIHIKO , KITAGAWA EIJI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , G11B5/39 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive element that develops giant magneto-resistance.
SOLUTION: The magnetoresistive element includes a first magnetic film 11, a tunnel barrier film 14 on the first magnetic film 11, and a second magnetic film 16 on the tunnel barrier film 14. The first magnetic film 11 contains at least one element selected out of C, P, As, Sn, Sb, Te, and Pb. The tunnel barrier film 14 has, on the film surface of the first magnetic film 11 on an interface between the first magnetic film 11 and tunnel barrier film 14, an NaCl type crystal structure (001) oriented in its normal direction.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供开发巨磁阻的磁阻元件。解决方案：磁阻元件包括第一磁性膜11，第一磁性膜11上的隧道阻挡膜14和隧道阻挡膜14上的第二磁性膜16.第一磁性膜11包含至少一个元件选自C，P，As，Sn，Sb，Te和Pb。隧道阻挡膜14在第一磁性膜11和隧道阻挡膜14之间的界面上的第一磁性膜11的膜表面上具有沿其法线方向取向的NaCl型晶体结构（001）。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2014241449A 磁気抵抗素子及び磁気メモリ审中-公开
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2014241449A
公开(公告)日：2014-12-25
申请号：JP2014189473
申请日：2014-09-17
申请人：株式会社東芝 , Toshiba Corp
发明人： DAIBO TATATOMI , KITAGAWA EIJI , KAMATA SHINGI , KASHIWADA SAORI , KATO YUSHI , YAKABE KEIYA
IPC分类号： H01L21/8246 , H01L21/318 , H01L27/105 , H01L43/08 , H01L43/10 , H01L43/12
摘要：【課題】磁気抵抗素子の絶縁不良を抑制する。【解決手段】実施形態による磁気抵抗素子は、第1の磁性層13と、第2の磁性層15と、第1の磁性層と第2の磁性層との間に設けられた中間層14と、第1の磁性層の中間層が設けられた面と反対面に設けられ、Hf、Al、Mg及びTiの中から選択された1つ以上の元素とBとを含む第1の層12Aと、第1の層の第1の磁性層が設けられた面と反対面に設けられ、Hf、Al及びMgの中から選択された1つ以上の元素とBとを含む第2の層12Bと、中間層の側壁に設けられ、第2の層に含まれるHf、Al及びMgの中から選択された1つ以上の元素を含む絶縁層20と、を具備する。【選択図】図1
摘要翻译：要解决的问题：抑制磁阻元件的绝缘故障。解决方案：根据实施例的磁阻元件包括：第一磁性层13; 第二磁性层15; 设置在第一磁性层和第二磁性层之间的中间层14; 第一层12A，其设置在与设置有中间层的第一磁性层的与该表面相反的表面上，并且包含B和选自Hf，Al，Mg和Ti的一种或多种元素; 第二层12B，其设置在与设置有第一磁性层的第一层的表面相反的表面上，并且包含B和选自Hf，Al和Mg的一种或多种元素; 以及绝缘层20，其设置在中间层的侧壁上，并且包含选自第二层中所含的Hf，Al和Mg中的一种或多种元素。

9. 发明专利

JP2014099497A Magnetoresistive element and magnetic memory 有权
公开(公告)号：JP2014099497A
公开(公告)日：2014-05-29
申请号：JP2012250338
申请日：2012-11-14
申请人： Toshiba Corp , 株式会社東芝
发明人： DAIBO TATATOMI , KITAGAWA EIJI , KAMATA SHINGI , KASHIWADA SAORI , KATO YUSHI , YAKABE KEIYA
IPC分类号： H01L43/10 , H01L21/3065 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08 , H01L43/12
CPC分类号： H01L43/08 , H01L27/228 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To suppress insulation failure of a magnetoresistive element.SOLUTION: A magnetoresistive element according to an embodiment comprises: a first magnetic layer 13; a second magnetic layer 15; an intermediate layer 14 provided between the first magnetic layer and the second magnetic layer; a first layer 12A which is provided on a surface opposite to that surface of the first magnetic layer on which the intermediate layer is provided, and contains B and one or more elements selected from Hf, Al, Mg, and Ti; a second layer 12B which is provided on a surface opposite to that surface of the first layer on which the first magnetic layer is provided, and contains B and one or more elements selected from Hf, Al, and Mg; and an insulating layer 20 which is provided on a side wall of the intermediate layer and contains the one or more elements selected from Hf, Al, and Mg contained in the second layer.

10. 发明专利

JP2012069595A Magnetoresistive element and magnetic random access memory 有权
标题翻译：磁性元件和磁性随机存取存储器
公开(公告)号：JP2012069595A
公开(公告)日：2012-04-05
申请号：JP2010211204
申请日：2010-09-21
申请人： Toshiba Corp , 株式会社東芝
发明人： UEDA KOJI , KAI TADASHI , NAGASE TOSHIHIKO , NISHIYAMA KATSUYA , KITAGAWA EIJI , DAIBO TATATOMI , NAGAMINE MAKOTO , YODA HIROAKI
IPC分类号： H01L27/105 , H01L21/8246 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： H01L43/08 , G11C11/16 , G11C11/1659 , H01F10/123 , H01F10/3254 , H01F10/3263 , H01F10/3286 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive element with a large thermal agitation resistance in which spin injection flux reversal writing is possible with a low current.SOLUTION: The magnetoresistive element includes: an electrode layer having a metal layer containing any one of Mo, Nb, and W; a memory layer 3 which is arranged on the metal layer in contact the metal layer, has an easy axis of magnetization in a direction perpendicular to a film surface and has a variable magnetization direction; a reference layer 2 which is arranged on the memory layer 3, has an easy axis of magnetization in a direction perpendicular to the film surface and has an invariable magnetization direction; and a first nonmagnetic layer 4 provided between the memory layer 3 and the reference layer 2. The magnetization direction of the memory layer 3 can be varied by current penetrating the memory layer 3, the first nonmagnetic layer 4, and the reference layer 2.
摘要翻译：要解决的问题：提供具有大的热搅拌电阻的磁阻元件，其中以低电流可以进行自旋注入通量反转写入。解决方案：磁阻元件包括：具有包含Mo，Nb和W中的任一种的金属层的电极层; 布置在与金属层接触的金属层上的记忆层3在垂直于膜表面的方向上具有容易的磁化轴并且具有可变的磁化方向; 布置在存储层3上的参考层2在垂直于膜表面的方向上具有容易的磁化轴并且具有不变的磁化方向; 以及设置在存储层3和参考层2之间的第一非磁性层4.存储层3的磁化方向可以通过穿过存储层3，第一非磁性层4和参考层2的电流而改变。 P>版权所有（C）2012，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式