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1. 发明专利

JP2011071352A Magnetoresistive element and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2011071352A
公开(公告)日：2011-04-07
申请号：JP2009221569
申请日：2009-09-25
申请人： National Institute Of Advanced Industrial Science & Technology , Toshiba Corp , 株式会社東芝 , 独立行政法人産業技術総合研究所
发明人： KAI TADASHI , NISHIYAMA KATSUYA , NAGASE TOSHIHIKO , YOSHIKAWA MASAHISA , KITAGAWA EIJI , DAIBO TATATOMI , NAGAMINE MAKOTO , NAKAYAMA MASAHIKO , SHIMOMURA NAOHARU , YODA HIROAKI , YAKUSHIJI HIROSHI , YUASA SHINJI , KUBOTA HITOSHI , NAGAHAMA TARO , FUKUSHIMA AKIO , ANDO KOJI
IPC分类号： H01L43/08 , G11C11/15 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105
CPC分类号： H01L43/10 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228 , Y10S977/935
摘要： PROBLEM TO BE SOLVED: To provide a spin-transfer-torque writing type magnetoresistive element with thermal stability and low current consumption. SOLUTION: The magnetoresistive element includes a first magnetic layer 3 which has an easy axis of magnetization in a direction vertical to a film surface and has variable magnetization direction, a second magnetic layer 2 which has an easy axis of magnetization in the direction vertical to the film surface, and a first nonmagnetic layer 4 provided between the first magnetic layer 3 and second magnetic layer 2. The first magnetic layer 3 is made of a ferromagnetic material which includes a CoPd alloy or CoPt alloy having Co and Pd or Co and Pt laminated alternately on an atomically close-packed plane thereof, and has a (c) axis in the direction vertical to the film surface. The magnetization direction of the first magnetic layer 3 varies with a bidirectional current penetrating the first magnetic layer 3, first nonmagnetic layer 4 and second magnetic layer 2. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供具有热稳定性和低电流消耗的自旋转矩扭矩书写型磁阻元件。解决方案：磁阻元件包括第一磁性层3，其在垂直于膜表面的方向上具有易磁化轴并且具有可变的磁化方向;第二磁性层2，其在方向上具有易磁化轴设置在第一磁性层3和第二磁性层2之间的第一非磁性层4.第一磁性层3由包含Co和Pd或Co的CoPd合金或CoPt合金的铁磁材料制成并且Pt在其原子紧密堆积的平面上交替层压，并且在垂直于膜表面的方向上具有（c）轴。第一磁性层3的磁化方向随着穿过第一磁性层3，第一非磁性层4和第二磁性层2的双向电流而变化。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2012064903A Magnetoresistance effect element, magnetic memory and method of manufacturing magnetoresistance effect element 有权
标题翻译：磁阻效应元件，磁记忆和制造磁阻效应元件的方法
公开(公告)号：JP2012064903A
公开(公告)日：2012-03-29
申请号：JP2010210180
申请日：2010-09-17
申请人： National Institute Of Advanced Industrial & Technology , Toshiba Corp , 株式会社東芝 , 独立行政法人産業技術総合研究所
发明人： KITAGAWA EIJI , DAIBO TATATOMI , HASHIMOTO YUTAKA , TOKO MASARU , KAI TADASHI , NAGAMINE MAKOTO , NAGASE TOSHIHIKO , NISHIYAMA KATSUYA , UEDA KOJI , YODA HIROAKI , YAKUSHIJI KEI , YUASA SHINJI , KUBOTA HITOSHI , NAGAHAMA TARO , FUKUSHIMA AKIO , ANDO KOJI
IPC分类号： H01L27/105 , H01F10/14 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L43/08
CPC分类号： H01L43/10 , B82Y40/00 , G11C11/161 , H01F10/133 , H01F10/3286 , H01F41/307 , H01L27/228 , H01L29/82 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To improve the device characteristics of a magnetoresistance effect element.SOLUTION: The magnetoresistance effect element includes a second magnetic layer 92 having magnetic anisotropy in the direction perpendicular to the film surface and an invariable orientation of magnetization, a first magnetic layer 91 having magnetic anisotropy in the direction perpendicular to the film surface and a variable orientation of magnetization, and a nonmagnetic layer 93 provided between the first and second magnetic layers 91, 92. The first magnetic layer 91 has a magnetization film 21 containing at least one element selected from a first group consisting of Tb, Gd and Dy, and at least one element selected from a second group consisting of Co and Fe. The magnetization film 21 contains an amorphous phase 29 and a crystal 28 having a particle size of 1 nm or less.
摘要翻译：要解决的问题：提高磁阻效应元件的器件特性。解决方案：磁阻效应元件包括在垂直于膜表面的方向上具有磁各向异性的第二磁性层92和磁化的不变取向，在垂直于膜表面的方向上具有磁各向异性的第一磁性层91和磁化的可变取向以及设置在第一和第二磁性层91,92之间的非磁性层93.第一磁性层91具有包含至少一种选自Tb，Gd和Dy的元素的磁化膜21 ，以及选自Co和Fe组成的第二组中的至少一种元素。磁化膜21包含非晶相29和粒径为1nm以下的晶体28。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2012064774A Magnetic resistance element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆
公开(公告)号：JP2012064774A
公开(公告)日：2012-03-29
申请号：JP2010208042
申请日：2010-09-16
申请人： National Institute Of Advanced Industrial & Technology , Toshiba Corp , 株式会社東芝 , 独立行政法人産業技術総合研究所
发明人： NAGASE TOSHIHIKO , KAI TADASHI , NAGAMINE MAKOTO , NISHIYAMA KATSUYA , KITAGAWA EIJI , DAIBO TADAOMI , UEDA KOJI , YODA HIROAKI , YAKUSHIJI KEI , YUASA SHINJI , KUBOTA HITOSHI , NAGAHAMA TARO , FUKUSHIMA AKIO , ANDO KOJI
IPC分类号： H01L27/105 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L29/82 , H01L43/08
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a spin-implantation writing magnetic resistance element, which is thermally stable and which can be reversed in magnetization with a low current.SOLUTION: A magnetic resistance element according to an embodiment comprises: a first magnetic layer having an axis of easy magnetization in a film surface perpendicular direction; a second magnetic layer having an axis of easy magnetization in a film surface perpendicular direction; and a non-magnetic layer provided between the first and second magnetic layers. At least one of the first and second magnetic layers has a structure in which a first magnetic film and a second magnetic film provided on the non-magnetic layer side are stacked. The second magnetic film has a structure in which a magnetic material layer and a non-magnetic material layer are stacked on each other repeatedly for at least two cycles. The non-magnetic material layer of the second magnetic film contains at least one element selected from the group consisting of Ta, W, Hf, Zr, Nb, Mo, Ti, V and Cr. The direction magnetization of one of the first and second magnetic layers can be made variable by forcing electric current to flow between the first and second magnetic layers through the non-magnetic layer.
摘要翻译：要解决的问题：提供一种热稳定的自旋注入写入磁阻元件，并且可以以低电流在磁化中反转。解决方案：根据实施例的磁阻元件包括：在膜表面垂直方向上具有容易磁化的轴的第一磁性层; 在膜表面垂直方向具有易磁化轴的第二磁性层; 以及设置在第一和第二磁性层之间的非磁性层。第一和第二磁性层中的至少一个具有其中堆叠设置在非磁性层侧的第一磁性膜和第二磁性膜的结构。第二磁性膜具有其中磁性材料层和非磁性材料层重复堆叠至少两个循环的结构。第二磁性膜的非磁性材料层含有选自Ta，W，Hf，Zr，Nb，Mo，Ti，V和Cr中的至少一种元素。可以通过迫使电流通过非磁性层在第一和第二磁性层之间流动来使得第一和第二磁性层之一的方向磁化可变。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2009099628A Magneto-resistance effect element, and magnetic random access memory 有权
标题翻译：磁阻效应元件和磁性随机存取存储器
公开(公告)号：JP2009099628A
公开(公告)日：2009-05-07
申请号：JP2007267238
申请日：2007-10-12
申请人： National Institute Of Advanced Industrial & Technology , Toshiba Corp , 株式会社東芝 , 独立行政法人産業技術総合研究所
发明人： NAKAYAMA MASAHIKO , YAKUSHIJI HIROSHI , IKEGAWA SUMIO , YUASA SHINJI , KAI TADASHI , NAGASE TOSHIHIKO , AMANO MINORU , AIKAWA HISANORI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , G11C11/15 , H01L21/8246 , H01L27/105
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/15 , G11C11/1659 , G11C11/1675 , H01F10/123 , H01F10/325 , H01F10/3254 , H01F10/3286 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magneto-resistance effect element which is improved in resistance to thermal disturbance and can be stopped from entering an intermediate value state, and to provide a magnetic random access memory. SOLUTION: The magneto-resistance effect element has a fixed layer 11 which is made of a magnetic material and has first magnetism directed at right angles to a film surface, a recording layer 13 which is made of a magnetic material and has second magnetism directed at right angles to the film surface and can invert the direction of the second magnetism, and a nonmagnetic layer 12 provided between the fixed layer 11 and recording layer 13. A critical diameter (uniaxial critical diameter Ds*) which is determined by magnetic anisotropy, saturated magnetism, and exchange-coupling of the recording layer 13 and with which a single-magnetic-domain state is the only one stable state, or a critical diameter (uniaxial inversion critical diameter Ds) with which the single-magnetic-domain state is the only one stable state and inversion is caused in an inversion process while the single-magnetic-domain state is maintained is larger than the element diameter of the magneto-resistance effect element. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种耐热扰动性提高并且可以停止进入中间值状态的磁阻效应元件，并提供磁性随机存取存储器。解决方案：磁阻效应元件具有由磁性材料制成并且具有与膜表面成直角的第一磁性的固定层11，由磁性材料制成并具有第二磁性材料的记录层13 具有与膜表面成直角的磁性并且可以反转第二磁性的方向，以及设置在固定层11和记录层13之间的非磁性层12.由磁性材料确定的临界直径（单轴临界直径Ds *）记录层13的各向异性，饱和磁性和交换耦合，单磁畴状态是唯一的一个稳定状态，或临界直径（单轴反转临界直径Ds），单磁畴状态是唯一的稳定状态，并且在反转过程中引起反转，同时保持单磁畴状态大于磁阻效应元件的元件直径 ent。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2012204683A Magnetic resistance element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆
公开(公告)号：JP2012204683A
公开(公告)日：2012-10-22
申请号：JP2011068868
申请日：2011-03-25
申请人： Toshiba Corp , Tohoku University Wpi Advanced Institute For Materials Research , National Institute Of Advanced Industrial & Technology , 国立大学法人東北大学原子分子材料科学高等研究機構 , 株式会社東芝 , 独立行政法人産業技術総合研究所
发明人： DAIBO TADAOMI , ITO JUNICHI , KAI TADASHI , AMANO MINORU , YODA HIROAKI , MIYAZAKI TERUNOBU , MIZUKAMI NARUMI , KUBOTA TAKAHIDE , YAKUSHIJI KEI , YUASA SHINJI , KUBOTA HITOSHI , FUKUSHIMA AKIO , NAGAHAMA TARO , ANDO KOJI
IPC分类号： H01L27/105 , H01F10/32 , H01L21/8246 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： H01L43/10 , H01L23/528 , H01L27/222 , H01L27/226 , H01L43/02 , H01L43/08 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a magnetic resistance element having a perpendicular magnetic anisotropy and in which a larger magnetoresistance can be achieved, and a magnetic memory thereof.SOLUTION: The magnetic resistance element comprises: an under layer; a first magnetic layer that is formed on the under layer, and has a magnetic film having a magnetization easy axis perpendicular to the film plane, and represented by MnGa(45≤x
摘要翻译：要解决的问题：提供具有垂直磁各向异性并且可以实现更大磁阻的磁阻元件及其磁存储器。解决方案：磁阻元件包括：下层; 形成在下层上的第一磁性层，具有磁化容易轴垂直于膜平面的磁性膜，由Mn ＆lt; SB＆lt; SB POS = “POST”> 100-x （45≤x<64atm％）; 形成在第一磁性层上的第一非磁性层; 以及形成在所述第一非磁性层上的第二磁性层，并且具有磁化容易轴垂直于所述膜平面的磁性膜，并且由Mn ”Ga 100-y （45≤x<64atm％）。第一和第二磁性层中的Mn的组成比不同。通过在第一和第二磁性层之间通过第一非磁性层馈送的电流来改变第一磁性层的磁化方向。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2012064818A Magnetoresistive element 有权
标题翻译：磁电元件
公开(公告)号：JP2012064818A
公开(公告)日：2012-03-29
申请号：JP2010208616
申请日：2010-09-16
申请人： Toshiba Corp , 株式会社東芝
发明人： KITAGAWA EIJI , DAIBO TATATOMI , KAI TADASHI , NAGASE TOSHIHIKO , NOMA KENJI , YODA HIROAKI
IPC分类号： H01L27/105 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L29/82 , H01L43/08
CPC分类号： H01L43/02 , G01R33/091 , G01R33/093 , G11B5/66 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/30 , H01L27/228 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To reduce the write current.SOLUTION: A magnetoresistive element 10 comprises: a recording layer 13 having magnetic anisotropy in the direction normal to a film surface and a variable magnetization direction; a reference layer 15 having magnetic anisotropy in the direction normal to a film surface and a variable magnetization direction; an intermediate layer 14 provided between the recording layer 13 and the reference layer 15; and an underlying layer 12 provided on a surface of the recording layer 13 opposite from a surface where the intermediate layer 14 is provided. The recording layer 13 has a magnetic layer 13C provided on the intermediate layer 14 side and containing CoFe as a main component, and a magnetic layer 13A provided on the underlying layer 12 side and containing CoFe as a main component, where the concentration of Fe in the magnetic layer 13C is higher than the concentration of Fe in the magnetic layer 13A. The underlying layer 12 consists of a nitride compound.
摘要翻译：要解决的问题：减少写入电流。解决方案：磁阻元件10包括：在垂直于膜表面的方向和可变的磁化方向上具有磁各向异性的记录层13; 在垂直于膜表面的方向和可变的磁化方向上具有磁各向异性的参考层15; 设置在记录层13和参考层15之间的中间层14; 以及设置在与设置中间层14的表面相反的记录层13的表面上的下层12。记录层13具有设置在中间层14侧并含有CoFe作为主要成分的磁性层13C和设置在下层12侧并含有CoFe作为主要成分的磁性层13A，其中Fe的浓度磁性层13C比磁性层13A中的Fe的浓度高。底层12由氮化物组成。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2011198809A Magnetoresistive element, method for manufacturing the same, and magnetic memory 有权
标题翻译：磁性元件，制造它们的方法和磁记忆
公开(公告)号：JP2011198809A
公开(公告)日：2011-10-06
申请号：JP2010060903
申请日：2010-03-17
申请人： Toshiba Corp , 株式会社東芝
发明人： KITAGAWA EIJI , DAIBO TADAOMI , KAI TADASHI , YODA HIROAKI , HASHIMOTO YUTAKA
IPC分类号： H01L43/12 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： H01L43/08 , H01L27/228 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive effect element having a high MR ratio, and to provide a method for manufacturing the same, and a magnetic memory.SOLUTION: The magnetoresistive effect element includes a first magnetic layer 14; a tunnel barrier layer 16 provided on the first magnetic layer; a second magnetic layer 18a provided on the tunnel barrier layer and containing CoFe; and a nonmagnetic layer 19, provided on the second magnetic layer and containing nitrogen and at least one element selected from the group consisting of B, Ta, Zr, Al, and Ce.
摘要翻译：要解决的问题：提供具有高MR比的磁阻效应元件，并提供其制造方法和磁存储器。解决方案：磁阻效应元件包括第一磁性层14; 设置在第一磁性层上的隧道势垒层16; 设置在隧道势垒层上并含有CoFe的第二磁性层18a; 以及设置在第二磁性层上并含有氮和选自B，Ta，Zr，Al和Ce中的至少一种元素的非磁性层19。

8. 发明专利

JP2010080746A Magnetoresistance effect element and magnetic memory 有权
标题翻译：磁阻效应元件和磁记忆
公开(公告)号：JP2010080746A
公开(公告)日：2010-04-08
申请号：JP2008248633
申请日：2008-09-26
申请人： Toshiba Corp , 株式会社東芝
发明人： OSEGI JUNICHI , SHIMOMURA NAOHARU , IKEGAWA SUMIO , KAI TADASHI , NAKAYAMA MASAHIKO , AIKAWA HISANORI , KISHI TATSUYA , KODA HIROAKI
IPC分类号： H01L43/08 , G11C11/15 , H01L21/8246 , H01L27/105
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1675
摘要： PROBLEM TO BE SOLVED: To reduce a leakage magnetic field applied to a storage layer as much as possible.
SOLUTION: A magnetoresistance effect element includes: a ferromagnetic layer 10 having a magnetic anisotropy in the vertical direction to a film surface; a first nonmagnetic layer 8 formed on the ferromagnetic layer; and a reference layer 6 being formed on the first nonmagnetic layer, having the magnetic anisotropy in the vertical direction of the film surface while having a magnetization antiparallel with the direction of the magnetization of the ferromagnetic layer and having a film thickness of ≥1/2.8 and ≤1/1.5 of the film thickness in the laminating direction of the ferromagnetic layer. The magnetoresistance effect element further includes: a second nonmagnetic layer 8 formed on the reference layer; and the storage layer 2 being formed on the second nonmagnetic layer and changing the direction of the magnetization by the working of electrons having the magnetic anisotropy in the vertical direction of the film surface and spin-polarized.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：尽可能减少施加到存储层的泄漏磁场。解决方案：磁阻效应元件包括：在垂直于膜表面的方向上具有磁各向异性的铁磁层10; 形成在铁磁层上的第一非磁性层8; 以及在第一非磁性层上形成的参考层6，其具有在膜表面的垂直方向上的磁各向异性，同时具有与铁磁层的磁化方向反平行并具有≥1/ 2.8的膜厚度的磁化和铁磁层的层叠方向的膜厚的≤1/ 1.5。磁阻效应元件还包括：形成在参考层上的第二非磁性层8; 并且存储层2形成在第二非磁性层上，并且通过在膜表面的垂直方向上具有磁各向异性的电子的工作和自旋极化来改变磁化方向。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2008252018A Magnetoresistance effect element, and magnetic random access memory using the same 审中-公开
标题翻译： MAGNETORESISTANCE效应元件和使用其的磁性随机存取存储器
公开(公告)号：JP2008252018A
公开(公告)日：2008-10-16
申请号：JP2007094625
申请日：2007-03-30
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIKAWA MASAHISA , KITAGAWA EIJI , KAI TADASHI , NAGASE TOSHIHIKO , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , G11B5/39 , H01F10/14 , H01F10/16 , H01F41/32 , H01L21/8246 , H01L27/105 , H01L29/82
CPC分类号： H01L43/10 , G11C11/161 , H01L27/228 , Y10S977/935
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element for spin injection writing system which is thermally stable and enables magnetization reversal of low current.
SOLUTION: The magnetresistance effect element 1 includes a first magnetization fixed layer 2 having a fixed magnetization direction. A mangnetization variable layer 3 has a variable magnetization direction, and contains at least one element selected from among Fe, Co and Ni, at least one element selected from among Ru, Rh, Pd, Ag, Re, Os, Ir, Pt and Au, and at least one element selected from among V, Cr and Mn. A first intermediate layer 4 is provided between the first magnetization fixed layer and the magnetization variable layer, and made of a non-magnetic material. The direction of magnetization of the magnetization variable layer varies depending on the bidirectional current penetrating through the first magnetization fixed layer, the first intermediate layer and the magnetization variable layer.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种热稳定的自旋注入写入系统的磁阻效应元件，并能够实现低电流的磁化反转。解决方案：磁阻效应元件1包括具有固定的磁化方向的第一磁化固定层2。锰化变性层3具有可变的磁化方向，并且包含选自Fe，Co和Ni中的至少一种元素，选自Ru，Rh，Pd，Ag，Re，Os，Ir，Pt和Au中的至少一种元素，和选自V，Cr和Mn中的至少一种元素。第一中间层4设置在第一磁化固定层和磁化变化层之间，由非磁性材料制成。磁化可变层的磁化方向根据穿透第一磁化固定层，第一中间层和磁化变化层的双向电流而变化。版权所有（C）2009，JPO＆INPIT

10. 发明专利

JP2007142364A Magnetoresistance effect element, magnetic random access memory, electronic card and electronic device 有权
标题翻译：磁阻效应元件，磁性随机存取存储器，电子卡和电子设备
公开(公告)号：JP2007142364A
公开(公告)日：2007-06-07
申请号：JP2006172845
申请日：2006-06-22
申请人： Toshiba Corp , 株式会社東芝
发明人： NAGASE TOSHIHIKO , YOSHIKAWA MASAHISA , KITAGAWA EIJI , NAKAYAMA MASAHIKO , KAI TADASHI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/10
CPC分类号： G01R33/093 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To maintain a thermal agitation resistance with high bit information and realize a large capacity, even if a memory cell is fined. SOLUTION: A magnetoresistance effect element is provided with: a fixed layer 12 which has a first magnetization 22 directed in a direction perpendicular to a film surface; a recording layer 11 which has a second magnetization 21 directed in a direction perpendicular to the film surface, in which a direction of the second magnetization 21 is reversible by a spin-polarized electron; and a nonmagnetic layer 13 which is provided between the fixed layer 12 and the recording layer 11 and has a first surface facing to the fixed layer 12 and a second surface facing to the recording layer 11. A saturation magnetization Ms of the recording layer 11 satisfies a relation 0≤Ms COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：即使存储单元被罚款，为了保持具有高位信息的热搅拌电阻并实现大容量。解决方案：磁阻效应元件设置有：固定层12，其具有指向垂直于膜表面的方向的第一磁化22; 记录层11具有在垂直于膜表面的方向上的第二磁化强度21，其中第二磁化强度21的方向由自旋极化电子可逆; 以及设置在固定层12和记录层11之间并具有面向固定层12的第一表面和面向记录层11的第二表面的非磁性层13.记录层11的饱和磁化强度Ms满足写入电流密度为Jw时，关系为0≤Ms<√äJw/（6πAt）}，记录层11的膜厚度为t，常数为A.A是g'×e×α/（h / 2π×g），其中g'是g因子，e是电量的量子，α是吉尔伯特的倾倒常数，h是普朗克常数，g是当第一和第二磁化22,21是平行排列。版权所有（C）2007，JPO＆INPIT

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