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1. 发明专利

JP2011071352A Magnetoresistive element and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2011071352A
公开(公告)日：2011-04-07
申请号：JP2009221569
申请日：2009-09-25
申请人： National Institute Of Advanced Industrial Science & Technology , Toshiba Corp , 株式会社東芝 , 独立行政法人産業技術総合研究所
发明人： KAI TADASHI , NISHIYAMA KATSUYA , NAGASE TOSHIHIKO , YOSHIKAWA MASAHISA , KITAGAWA EIJI , DAIBO TATATOMI , NAGAMINE MAKOTO , NAKAYAMA MASAHIKO , SHIMOMURA NAOHARU , YODA HIROAKI , YAKUSHIJI HIROSHI , YUASA SHINJI , KUBOTA HITOSHI , NAGAHAMA TARO , FUKUSHIMA AKIO , ANDO KOJI
IPC分类号： H01L43/08 , G11C11/15 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105
CPC分类号： H01L43/10 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228 , Y10S977/935
摘要： PROBLEM TO BE SOLVED: To provide a spin-transfer-torque writing type magnetoresistive element with thermal stability and low current consumption. SOLUTION: The magnetoresistive element includes a first magnetic layer 3 which has an easy axis of magnetization in a direction vertical to a film surface and has variable magnetization direction, a second magnetic layer 2 which has an easy axis of magnetization in the direction vertical to the film surface, and a first nonmagnetic layer 4 provided between the first magnetic layer 3 and second magnetic layer 2. The first magnetic layer 3 is made of a ferromagnetic material which includes a CoPd alloy or CoPt alloy having Co and Pd or Co and Pt laminated alternately on an atomically close-packed plane thereof, and has a (c) axis in the direction vertical to the film surface. The magnetization direction of the first magnetic layer 3 varies with a bidirectional current penetrating the first magnetic layer 3, first nonmagnetic layer 4 and second magnetic layer 2. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供具有热稳定性和低电流消耗的自旋转矩扭矩书写型磁阻元件。解决方案：磁阻元件包括第一磁性层3，其在垂直于膜表面的方向上具有易磁化轴并且具有可变的磁化方向;第二磁性层2，其在方向上具有易磁化轴设置在第一磁性层3和第二磁性层2之间的第一非磁性层4.第一磁性层3由包含Co和Pd或Co的CoPd合金或CoPt合金的铁磁材料制成并且Pt在其原子紧密堆积的平面上交替层压，并且在垂直于膜表面的方向上具有（c）轴。第一磁性层3的磁化方向随着穿过第一磁性层3，第一非磁性层4和第二磁性层2的双向电流而变化。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2012064903A Magnetoresistance effect element, magnetic memory and method of manufacturing magnetoresistance effect element 有权
标题翻译：磁阻效应元件，磁记忆和制造磁阻效应元件的方法
公开(公告)号：JP2012064903A
公开(公告)日：2012-03-29
申请号：JP2010210180
申请日：2010-09-17
申请人： National Institute Of Advanced Industrial & Technology , Toshiba Corp , 株式会社東芝 , 独立行政法人産業技術総合研究所
发明人： KITAGAWA EIJI , DAIBO TATATOMI , HASHIMOTO YUTAKA , TOKO MASARU , KAI TADASHI , NAGAMINE MAKOTO , NAGASE TOSHIHIKO , NISHIYAMA KATSUYA , UEDA KOJI , YODA HIROAKI , YAKUSHIJI KEI , YUASA SHINJI , KUBOTA HITOSHI , NAGAHAMA TARO , FUKUSHIMA AKIO , ANDO KOJI
IPC分类号： H01L27/105 , H01F10/14 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L43/08
CPC分类号： H01L43/10 , B82Y40/00 , G11C11/161 , H01F10/133 , H01F10/3286 , H01F41/307 , H01L27/228 , H01L29/82 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To improve the device characteristics of a magnetoresistance effect element.SOLUTION: The magnetoresistance effect element includes a second magnetic layer 92 having magnetic anisotropy in the direction perpendicular to the film surface and an invariable orientation of magnetization, a first magnetic layer 91 having magnetic anisotropy in the direction perpendicular to the film surface and a variable orientation of magnetization, and a nonmagnetic layer 93 provided between the first and second magnetic layers 91, 92. The first magnetic layer 91 has a magnetization film 21 containing at least one element selected from a first group consisting of Tb, Gd and Dy, and at least one element selected from a second group consisting of Co and Fe. The magnetization film 21 contains an amorphous phase 29 and a crystal 28 having a particle size of 1 nm or less.
摘要翻译：要解决的问题：提高磁阻效应元件的器件特性。解决方案：磁阻效应元件包括在垂直于膜表面的方向上具有磁各向异性的第二磁性层92和磁化的不变取向，在垂直于膜表面的方向上具有磁各向异性的第一磁性层91和磁化的可变取向以及设置在第一和第二磁性层91,92之间的非磁性层93.第一磁性层91具有包含至少一种选自Tb，Gd和Dy的元素的磁化膜21 ，以及选自Co和Fe组成的第二组中的至少一种元素。磁化膜21包含非晶相29和粒径为1nm以下的晶体28。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2012064774A Magnetic resistance element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆
公开(公告)号：JP2012064774A
公开(公告)日：2012-03-29
申请号：JP2010208042
申请日：2010-09-16
申请人： National Institute Of Advanced Industrial & Technology , Toshiba Corp , 株式会社東芝 , 独立行政法人産業技術総合研究所
发明人： NAGASE TOSHIHIKO , KAI TADASHI , NAGAMINE MAKOTO , NISHIYAMA KATSUYA , KITAGAWA EIJI , DAIBO TADAOMI , UEDA KOJI , YODA HIROAKI , YAKUSHIJI KEI , YUASA SHINJI , KUBOTA HITOSHI , NAGAHAMA TARO , FUKUSHIMA AKIO , ANDO KOJI
IPC分类号： H01L27/105 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L29/82 , H01L43/08
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a spin-implantation writing magnetic resistance element, which is thermally stable and which can be reversed in magnetization with a low current.SOLUTION: A magnetic resistance element according to an embodiment comprises: a first magnetic layer having an axis of easy magnetization in a film surface perpendicular direction; a second magnetic layer having an axis of easy magnetization in a film surface perpendicular direction; and a non-magnetic layer provided between the first and second magnetic layers. At least one of the first and second magnetic layers has a structure in which a first magnetic film and a second magnetic film provided on the non-magnetic layer side are stacked. The second magnetic film has a structure in which a magnetic material layer and a non-magnetic material layer are stacked on each other repeatedly for at least two cycles. The non-magnetic material layer of the second magnetic film contains at least one element selected from the group consisting of Ta, W, Hf, Zr, Nb, Mo, Ti, V and Cr. The direction magnetization of one of the first and second magnetic layers can be made variable by forcing electric current to flow between the first and second magnetic layers through the non-magnetic layer.
摘要翻译：要解决的问题：提供一种热稳定的自旋注入写入磁阻元件，并且可以以低电流在磁化中反转。解决方案：根据实施例的磁阻元件包括：在膜表面垂直方向上具有容易磁化的轴的第一磁性层; 在膜表面垂直方向具有易磁化轴的第二磁性层; 以及设置在第一和第二磁性层之间的非磁性层。第一和第二磁性层中的至少一个具有其中堆叠设置在非磁性层侧的第一磁性膜和第二磁性膜的结构。第二磁性膜具有其中磁性材料层和非磁性材料层重复堆叠至少两个循环的结构。第二磁性膜的非磁性材料层含有选自Ta，W，Hf，Zr，Nb，Mo，Ti，V和Cr中的至少一种元素。可以通过迫使电流通过非磁性层在第一和第二磁性层之间流动来使得第一和第二磁性层之一的方向磁化可变。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2009081314A Magnetoresistive element, and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2009081314A
公开(公告)日：2009-04-16
申请号：JP2007250283
申请日：2007-09-26
申请人： Toshiba Corp , 株式会社東芝
发明人： NAGASE TOSHIHIKO , YOSHIKAWA MASAHISA , KITAGAWA EIJI , NISHIYAMA KATSUYA , DAIBO TATATOMI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , H01F10/13 , H01F10/14 , H01F10/16 , H01F10/28 , H01F10/30 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/10
CPC分类号： H01L43/10 , B82Y25/00 , G11C11/161 , H01F10/123 , H01F10/3254 , H01F10/3286 , H01L27/228
摘要： PROBLEM TO BE SOLVED: To secure a high magnetoresistance ratio and thermal disturbance resistance even when a memory cell is microfabricated. SOLUTION: A magnetoresistive element 10 includes a first underlying layer 23 having an NaCl structure and containing a nitride orienting in a (001) plane, a first magnetic layer 14 provided on the first underlying layer 23, having magnetic anisotropy perpendicular to a film surface, having an L1 0 structure, and containing a ferromagnetic alloy orienting in a (001) plane, a first nonmagnetic layer 16 provided on the first magnetic layer 14, and a second magnetic layer 17 provided on the first nonmagnetic layer 16 and having magnetic anisotropy perpendicular to a film surface. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：即使当存储器单元被微加工时，也可以确保高的磁阻比和热干扰电阻。解决方案：磁阻元件10包括具有NaCl结构并且包含在（001）面中定向的氮化物的第一下层23，设置在第一下层23上的第一磁性层14具有垂直于（001）面的磁性各向异性膜表面，具有L1 0 结构，并且包含在（001）面中定向的铁磁性合金，设置在第一磁性层14上的第一非磁性层16和设置在第一磁性层17上的第二磁性层17 第一非磁性层16并具有垂直于膜表面的磁各向异性。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2008098523A Magneto-resistance effect element, and magnetic memory 审中-公开
标题翻译：磁阻效应元件和磁记忆
公开(公告)号：JP2008098523A
公开(公告)日：2008-04-24
申请号：JP2006280620
申请日：2006-10-13
申请人： Toshiba Corp , 株式会社東芝
发明人： KITAGAWA EIJI , NAGASE TOSHIHIKO , YOSHIKAWA MASAHISA , NISHIYAMA KATSUYA , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/10 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： G11C11/16 , B82Y25/00 , H01F10/123 , H01F10/3236 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01L43/08 , Y10S977/935
摘要： PROBLEM TO BE SOLVED: To improve thermal stability and reduce an inversion current density in magnetization inversion. SOLUTION: The magneto-resistance effect element includes: a magnetization-free layer 12 which contains a magnetic material, has magnetization of the direction vertical to a film surface, changes the direction of magnetization by an action of a spin-polarized electron, and has a fct-type crystal structure that a (001) surface is oriented; a first and second non-magnetic layers 13, 14 which are located to sandwich the magnetization-free layer 12 and has a tetragonal or cubic system crystal structure; and a magnetization fixed layer 11 which is located only on one side of the magnetization-free layer 12, moreover, is located on the surface opposite to the surface of the first non-magnetic layer 13 that the magnetization-free layer 12 is located, contains a magnetic material, has magnetization in the direction vertical to the film surface, and the direction of magnetization is fixed. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提高热稳定性并降低磁化反转中的反转电流密度。解决方案：磁阻效应元件包括：含磁性材料的无磁化层12具有垂直于膜表面的方向的磁化，通过自旋极化电子的作用改变磁化方向并具有（001）面取向的fct型晶体结构。第一和第二非磁性层13,14位于夹着无磁化层12并具有四方晶系或立方晶系晶体结构; 此外，仅位于无磁化层12的一侧的磁化固定层11位于与无磁化层12所位于的第一非磁性层13的表面相反的表面上，含有磁性材料，在垂直于膜表面的方向上具有磁化，并且磁化方向固定。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2007005555A Magnetoresistive-effect element and magnetic random-access memory 有权
标题翻译：磁感应元件和磁性随机存取存储器
公开(公告)号：JP2007005555A
公开(公告)日：2007-01-11
申请号：JP2005183718
申请日：2005-06-23
申请人： Toshiba Corp , 株式会社東芝
发明人： NAGAMINE MAKOTO , NAGASE TOSHIHIKO , IKEGAWA SUMIO , NISHIYAMA KATSUYA , YOSHIKAWA MASAHISA
IPC分类号： H01L43/08 , G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/10
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , H01L27/224 , H01L27/228
摘要： PROBLEM TO BE SOLVED: To propose a magnetoresistive-effect element capable of making an improvement in a heat resistance and the improvement in an MR ratio compatible. SOLUTION: The magnetoresistive-effect element has a first surface and a second surface, and has a first magnetic layer 113 having a first standard-electrode potential V, a second magnetic layer 111, and a barrier layer 112 formed between the first surface of the first magnetic layer 113 and the second magnetic layer 111. The magnetoresistive-effect element further has a cap layer 114 brought into contact with the second surface of the first magnetic layer 113 formed of the alloy of a first metallic material M1 having a second standard-electrode potential V1 lower than the first standard-electrode potential V, and a second metallic material M2 having a third standard-electrode potential V2 higher than the first standard-electrode potential V and composed of a non-magnetic material. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提出能够提高耐热性和改善MR比的兼容性的磁阻效应元件。解决方案：磁阻效应元件具有第一表面和第二表面，并且具有第一磁性层113，其具有第一标准电极电位V，第二磁性层111和形成在第一和第二表面之间的阻挡层112 第一磁性层113和第二磁性层111的表面。磁阻效应元件还具有与第一金属材料M1的合金形成的第一磁性层113的第二表面接触的盖层114，第一金属材料M1具有第二标准电极电位V1低于第一标准电极电位V，第二金属材料M2具有比第一标准电极电位V高的第三标准电极电位V2并由非磁性材料构成。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2013053324A Sputtering target and method of manufacturing magnetic memory using the same 有权
标题翻译：溅射目标和使用其制造磁记忆的方法
公开(公告)号：JP2013053324A
公开(公告)日：2013-03-21
申请号：JP2011190868
申请日：2011-09-01
申请人： Toshiba Corp , 株式会社東芝 , Ube Material Industries Ltd , 宇部マテリアルズ株式会社
发明人： KITAGAWA EIJI , DAIBO TATATOMI , NOMA KENJI , KAI TADASHI , YAMAKAWA KOJI , NAGASE TOSHIHIKO , NISHIYAMA KATSUYA , UEDA KOJI , WATANABE DAISUKE , YODA HIROAKI , SANO SATOSHI , NISHIMURA YOSHIHIRO , WATANABE TAKAYUKI , KATO YUZO , UEKI AKIRA
IPC分类号： C23C14/34 , C04B35/053 , C23C14/08 , H01L21/8246 , H01L27/105 , H01L43/10 , H01L43/12
CPC分类号： C23C14/082 , C23C14/3414 , G11C11/161 , H01L27/228 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a sputtering target that can improve an MR ratio of a magnet tunnel junction element, and to provide a method of manufacturing a magnetic memory using the same.SOLUTION: There are provided the sputtering target including a target body 10 that has MgO as a main component and a thickness of 3 mm or smaller, and also the method of manufacturing a magnetic memory using the sputtering target which can improve an MR ratio.
摘要翻译：要解决的问题：提供能够提高磁体隧道结元件的MR比的溅射靶，并提供使用该溅射靶的磁性存储器的制造方法。解决方案：提供了包括具有MgO作为主要成分并且厚度为3mm以下的靶体10的溅射靶，以及使用能够改善MR的溅射靶的磁性存储器的制造方法比。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2013016644A Magnetoresistive element and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2013016644A
公开(公告)日：2013-01-24
申请号：JP2011148445
申请日：2011-07-04
申请人： Toshiba Corp , 株式会社東芝
发明人： NAGASE TOSHIHIKO , KITAGAWA EIJI , NISHIYAMA KATSUYA , KAI TADASHI , UEDA KOJI , WATANABE DAISUKE
IPC分类号： H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： H01L43/08 , G11C11/161 , H01F10/123 , H01F10/3272 , H01F10/3286 , H01L43/02 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive element capable of reducing a leaked magnetic field from a fixed layer which increases as the magnetoresistive element makes microfabricated, and allowing two magnetization states, which are a parallel state and an antiparallel state, in a storage layer to stably exist.SOLUTION: A magnetoresistive element 1 comprises a fixed layer 2, a storage layer 3, and non-magnetic layer 4. The fixed layer 2 includes a first ferromagnetic material 31 contacting the non-magnetic layer 4, a second ferromagnetic material 32, and a first non-magnetic material 33 provided between the first ferromagnetic material 31 and the second ferromagnetic material 32. The first ferromagnetic material 31 contains at least one element from a group of Zr, Nb, Mo, Hf, Ta and W, and Co.
摘要翻译：要解决的问题：提供一种磁阻元件，其能够减小来自固定层的泄漏磁场，随着磁阻元件微制造而增加，并且允许两个平行状态和反平行状态的磁化状态存储层稳定存在。解决方案：磁阻元件1包括固定层2，存储层3和非磁性层4.固定层2包括与非磁性层4接触的第一铁磁材料31，第二铁磁材料32 以及设置在第一铁磁材料31和第二铁磁材料32之间的第一非磁性材料33.第一铁磁材料31包含来自Zr，Nb，Mo，Hf，Ta和W的组中的至少一种元素，以及有限公司版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2013016560A Magnetoresistive element and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2013016560A
公开(公告)日：2013-01-24
申请号：JP2011146718
申请日：2011-06-30
申请人： Toshiba Corp , 株式会社東芝
发明人： NISHIYAMA KATSUYA , AIKAWA HISANORI , KAI TADASHI , NAGASE TOSHIHIKO , UEDA KOJI , YODA HIROAKI
IPC分类号： H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To cancel a leaked magnetic field which increases as a magnetoresistive element makes microfabricated.SOLUTION: A magnetoresistive element according to an embodiment comprises: a storage layer 2, magnetization of which is vertical and variable; a reference layer 4, magnetization of which is vertical and invariant; a shift adjustment layer 6, magnetization of which is vertical, invariant, and reverse to the magnetization of the reference layer 3; a first non-magnetic layer 3 provided between the storage layer 2 and the reference layer 4; and a second non-magnetic layer 5 provided between the reference layer 4 and the shift adjustment layer 6. A reverse magnetic field of the reference layer 4 is equal to or smaller than a reverse magnetic field of the storage layer 2. A magnetic relaxation constant of the reference layer 4 is bigger than a magnetic relaxation constant of the storage layer 2.
摘要翻译：要解决的问题：消除随着磁阻元件微制造而增加的泄漏磁场。解决方案：根据实施例的磁阻元件包括：存储层2，其磁化是垂直的和可变的; 参考层4，其磁化是垂直和不变的; 移位调整层6，其磁化是垂直的，不变的，并且与参考层3的磁化相反; 设置在存储层2和参考层4之间的第一非磁性层3; 以及设置在参考层4和移位调整层6之间的第二非磁性层5.参考层4的反向磁场等于或小于存储层2的反向磁场。磁性弛豫常数参考层4的厚度大于存储层2的磁性松弛常数。版权所有：（C）2013，JPO＆INPIT

10. 发明专利

JP2013016542A Magnetoresistive element and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2013016542A
公开(公告)日：2013-01-24
申请号：JP2011146329
申请日：2011-06-30
申请人： Toshiba Corp , 株式会社東芝
发明人： UEDA KOJI , NISHIYAMA KATSUYA , NAGASE TOSHIHIKO , WATANABE DAISUKE , KITAGAWA EIJI , KAI TADASHI
IPC分类号： H01L43/08 , G11C11/15 , H01L21/8246 , H01L27/105
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive element capable of reducing a thickness of a shift adjustment layer which cancels a leaked magnetic field applied to a storage layer from a reference layer.SOLUTION: There is provided a magnetoresistive element comprising: a reference layer 3, a direction of magnetization of which is fixed to one direction; a storage layer 2, a direction of magnetization of which is variable; a non-magnetic layer 4 provided between the reference layer 3 and the storage layer 2; an upper shift layer 6 which is arranged on a surface of the reference layer 3 opposite to a surface on which the non-magnetic layer 4 is arranged, and a direction of magnetization of which is antiparallel to the direction of magnetization of the reference layer 3; a lower shift layer 8 which is arranged on a surface of the storage layer 2 opposite to the surface on which the non-magnetic layer 4 is arranged, and a direction of magnetization of which is antiparallel to the direction of magnetization of the reference layer 3; a non-magnetic layer 5 arranged between the reference layer 3 and the upper shift layer 6; and a non-magnetic layer 7 arranged between the storage layer 2 and the lower shift layer 8. A thickness of the lower shift layer 8 is thinner than a thickness of the upper shift layer 6.
摘要翻译：要解决的问题：提供一种能够减小移位调节层的厚度的磁阻元件，其抵消从参考层施加到存储层的泄漏磁场。解决方案：提供一种磁阻元件，包括：参考层3，其磁化方向固定在一个方向上; 存储层2，其磁化方向是可变的; 设置在参考层3和存储层2之间的非磁性层4; 布置在参考层3的与非磁性层4的表面相对的表面上的上移位层6，其磁化方向与参考层3的磁化方向反平行 ; 布置在与设置有非磁性层4的表面相对的存储层2的表面上的下移位层8，其磁化方向与参考层3的磁化方向反平行 ; 布置在参考层3和上移位层6之间的非磁性层5; 以及布置在存储层2和下移位层8之间的非磁性层7.下变换层8的厚度比上层6的厚度薄。版权所有（C）2013， JPO和INPIT

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