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1. 发明授权

US4480284A Electrostatic chuck plate 失效
标题翻译：静电吸盘
公开(公告)号：US4480284A
公开(公告)日：1984-10-30
申请号：US428341
申请日：1982-09-29
申请人： Toru Tojo , Ichiro Mori , Shunichi Sano
发明人： Toru Tojo , Ichiro Mori , Shunichi Sano
IPC分类号： B23Q3/15 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6831 , H01L21/6833
摘要： An electrostatic chuck plate comprises an electrode plate made of electrically conductive material and a dielectric layer formed on one surface of the electrode plate by flame-spraying dielectric material. The surface region of the dielectric layer is impregnated with plastic material, and the surface of the dielectric layer is smooth and flat. A sample is electrostatically attracted toward the electrode plate and is thus held on the smooth and flat surface of the dielectric layer.
摘要翻译：静电卡盘包括由导电材料制成的电极板和通过火焰喷涂介电材料形成在电极板的一个表面上的电介质层。电介质层的表面区域用塑料材料浸渍，电介质层的表面光滑平坦。样品被静电吸引到电极板上，因此被保持在电介质层的光滑平坦的表面上。

2. 发明授权

US4467210A Electron-beam image transfer device 失效
标题翻译：电子束图像传输装置
公开(公告)号：US4467210A
公开(公告)日：1984-08-21
申请号：US379712
申请日：1982-05-18
申请人： Kazuyoshi Sugihara , Toru Tojo , Ichiro Mori , Toshiaki Shinozaki
发明人： Kazuyoshi Sugihara , Toru Tojo , Ichiro Mori , Toshiaki Shinozaki
IPC分类号： H01L21/027 , B65G49/07 , H01J37/18 , H01L21/30 , H01L21/677 , H01L21/68 , B23Q3/157
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F7/2037 , H01J37/18 , H01L21/30 , H01L21/67766 , H01L21/67796 , H01L21/682
摘要： An electron-beam image transfer device includes an evacuated vessel having a main chamber and spare chamber extended therefrom and a specimen holder and mask holder disposed in the main chamber. A subchamber is formed near the spare chamber to house a specimen. The specimen in the subchamber is transferred to the spare chamber by a movable support through an opening which is always kept in an airtight state, and then brought to the specimen holder by a transferring mechanism.
摘要翻译：电子束图像转印装置包括具有从其延伸的主室和备用室的抽真空容器和设置在主室中的试样保持器和掩模保持架。在备用室附近形成一个子室以容纳样品。子室中的样品通过可移动的支撑件通过总是保持在气密状态的开口转移到备用室，然后通过传送机构带到样品保持器。

3. 发明授权

US4572956A Electron beam pattern transfer system having an autofocusing mechanism 失效
标题翻译：具有自动聚焦机构的电子束图案转印系统
公开(公告)号：US4572956A
公开(公告)日：1986-02-25
申请号：US525419
申请日：1983-08-22
申请人： Toru Tojo , Ichiro Mori , Toshiaki Shinozaki , Kazuyoshi Sugihara , Mitsuo Tabata , Chikara Itoh
发明人： Toru Tojo , Ichiro Mori , Toshiaki Shinozaki , Kazuyoshi Sugihara , Mitsuo Tabata , Chikara Itoh
IPC分类号： G03F7/207 , H01J37/21 , H01J37/304 , H01J37/317 , H01J37/30
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/21 , H01J37/304 , H01J37/3175 , H01J2237/216 , H01J2237/30455 , H01J2237/31779 , Y10S505/879
摘要： An electron beam pattern transfer system is disclosed which includes a photoelectric transducing mask disposed within a vacuum container and adapted to transfer a photoelectron beam pattern corresponding to a pattern of the mask onto a sample according to an amount of an incident light, a DC voltage generator connected to vary a voltage applied between the mask and the sample, and a focusing coil of a superconductive magnet for creating a magnetic field of a predetermined intensity between the mask and the sample. When a mask-to-sample distance and/or magnetic field intensity varies undesirably, the variation is electrically detected by detectors. In order to compensate for the defocusing of the photoelectron beam pattern on the sample due to the above-mentioned variation, a microprocessor automatically calculates an amount of correction with respect to the intensity of the electric field between the mask and the sample, on a real-time basis and supplies its control signal to the DC voltage generator.
摘要翻译：公开了一种电子束图案转印系统，其包括设置在真空容器内并适于根据入射光量将对应于掩模图案的光电子束图案转移到样品上的光电转换掩模，直流电压发生器连接以改变施加在掩模和样品之间的电压，以及用于在掩模和样品之间产生预定强度的磁场的超导磁体的聚焦线圈。当掩模到采样距离和/或磁场强度变化不期望时，变化由检测器电检测。为了补偿由于上述变化而导致的样品上的光电子束图案的散焦，微处理器自动地计算相对于掩模和样品之间的电场强度的校正量，实际上并将其控制信号提供给直流电压发生器。

4. 发明授权

US4469949A Electron beam pattern transfer device and method for aligning mask and semiconductor wafer 失效
标题翻译：用于对准掩模和半导体晶片的电子束图案转移装置和方法
公开(公告)号：US4469949A
公开(公告)日：1984-09-04
申请号：US374724
申请日：1982-05-04
申请人： Ichiro Mori , Kazuyoshi Sugihara , Toshiaki Shinozaki , Toru Tojo
发明人： Ichiro Mori , Kazuyoshi Sugihara , Toshiaki Shinozaki , Toru Tojo
IPC分类号： H01L21/027 , H01J37/304 , H01L21/30 , H01J37/00
CPC分类号： H01L21/30 , H01J37/3045
摘要： According to the invention an electron beam pattern transfer device with an improved alignment means is provided.A first and a second mark M.sub.1, M.sub.2 for alignment purposes are formed on the surface of the wafer and the wafer holder, respectively. The first mark M.sub.1 is formed on the wafer by conventional lithographic technique and the second mark M.sub.2 consists of a hole or a heavy metal, such as Ta or Ta.sub.2 O.sub.5. A third alignment mark M.sub.3 is provided on the photocathode mask having a position corresponding to M.sub.2 on the wafer holder and spaced a known distance L.sub.2 from an imaginary reference position M.sub.4 on the mask. The first step of the alignment process requires the detection of a relative distance L.sub.1 between the first and second marks M.sub.1, M.sub.2 by conventional detecting means, such as an optical measuring means. In the next step, the relative position of the photocathode mask and the wafer holder is adjusted so that the distance between the marks M.sub.2 and M.sub.3 is made substantially equal to the difference between the distance L.sub.1 and the known distance L.sub. 2.
摘要翻译：根据本发明，提供了具有改进的对准装置的电子束图案转印装置。分别在晶片和晶片保持器的表面上形成用于对准目的的第一和第二标记M1，M2。第一标记M1通过常规平版印刷技术在晶片上形成，第二标记M2由孔或重金属如Ta或Ta2O5组成。第三对准标记M3设置在光电阴极掩模上，其具有对应于晶片保持器上的M2的位置，并且与掩模上的假想参考位置M4隔开已知距离L2。对准处理的第一步骤需要通过诸如光学测量装置的常规检测装置检测第一和第二标记M1，M2之间的相对距离L1。在下一步骤中，调整光电阴极掩模和晶片保持器的相对位置，使得标记M2和M3之间的距离基本上等于距离L1和已知距离L 2之间的差。

5. 发明授权

US07590277B2 Pattern inspecting method 失效
标题翻译：模式检查方法
公开(公告)号：US07590277B2
公开(公告)日：2009-09-15
申请号：US11175360
申请日：2005-07-07
申请人： Junji Oaki , Shinji Sugihara , Ikunao Isomura , Toru Tojo
发明人： Junji Oaki , Shinji Sugihara , Ikunao Isomura , Toru Tojo
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G06T2207/30148
摘要： The present invention is to allow rapid detection of such a defect as buried in a pixel positional deviation, expansion/contraction noise or sensing noise on an image. A relationship between an inspection reference pattern image and a pattern image to be inspected is identified during inspection to construct a mathematical model obtained by absorbing (applying fitting on) a pixel positional deviation, expansion/contraction noise or sensing noise on an image, and a defect is detected by comparing a new inspection reference pattern image (model image) obtained by simulating the mathematical model and a pattern image to be inspected.
摘要翻译：本发明可以快速检测像图像中的像素位置偏差，扩张/收缩噪声或感测噪声那样的缺陷。在检查中识别出检查基准图案图像与待检查图案图像之间的关系，构成通过吸收（贴合）图像上的像素位置偏差，扩张/收缩噪声或感测噪声而获得的数学模型，以及通过比较通过模拟数学模型获得的新的检查参考图案图像（模型图像）和待检查的图案图像来检测缺陷。

6. 发明申请

US20080166054A1 PATTERN INSPECTION APPARATUS 有权
标题翻译：图案检查装置
公开(公告)号：US20080166054A1
公开(公告)日：2008-07-10
申请号：US12040541
申请日：2008-02-29
申请人： Hideo Tsuchiya , Kyoji Yamashita , Toshiyuki Watanabe , Ikunao Isomura , Toru Tojo , Yasushi Sanada
发明人： Hideo Tsuchiya , Kyoji Yamashita , Toshiyuki Watanabe , Ikunao Isomura , Toru Tojo , Yasushi Sanada
IPC分类号： G06K9/46
CPC分类号： G06T7/0004 , G06T2207/30148
摘要： A pattern inspection apparatus uses a die-to-database comparison method which compares detected pattern data obtained from an optical image of a pattern of a plate to be inspected with first reference pattern data obtained from designed pattern data in combination with a die-to-die comparison method which compares the detected pattern data with second reference pattern data obtained by detecting an area to be a basis for repetition. A computer detects presence of a plurality of repeated pattern areas from layout information contained in the designed pattern data, reads the arrangement, the number, the dimension and the repeated pitch of the repeated pattern areas, and automatically fetches an inspection area of the die-to-die comparison method.
摘要翻译：图案检查装置使用芯片对数据库比较方法，将从被检查板的图案的光学图像获得的检测图案数据与从设计图案数据获得的第一参考图案数据结合，芯片比较方法，其将检测到的图案数据与通过检测作为重复基础的区域获得的第二参考图案数据进行比较。计算机从包含在设计图案数据中的布局信息中检测多个重复图案区域的存在，读取重复图案区域的布置，数量，尺寸和重复间距，并且自动取出模具数据的检查区域，对比方法。

7. 发明申请

US20080151230A1 PATTERN INSPECTION METHOD 有权
标题翻译：模式检验方法
公开(公告)号：US20080151230A1
公开(公告)日：2008-06-26
申请号：US12033599
申请日：2008-02-19
申请人： Toru Tojo , Toshiyuki Watanabe , Ikunao Isomura , Akihiko Sekine
发明人： Toru Tojo , Toshiyuki Watanabe , Ikunao Isomura , Akihiko Sekine
IPC分类号： G01N21/00
CPC分类号： G01N21/956
摘要： A pattern inspection apparatus comprises an illumination optics applying a first inspection light on a predetermined wavelength to a surface opposite to a pattern formed surface of the substrate, and a second inspection light whose wavelength is equal to the wavelength of the first inspection light to the pattern formed surface, a detector independently detecting a transmitted light from the substrate by irradiation of the first inspection light and a reflected light from the substrate by irradiation of the second inspection light, and a space separation mechanism provided in the vicinity of an optical focal plane toward the pattern formed surface, and spatially separates an irradiation area of the first and second inspection lights such that the transmitted and reflected lights from the substrate are imaged in two discrete areas separated on the optical focal plane.
摘要翻译：图案检查装置包括将预定波长的第一检查光施加到与基板的图案形成表面相对的表面的照明光学器件以及其波长等于第一检查光的波长与图案的第二检查光形成表面，检测器，通过照射第一检查光和通过照射第二检查光的来自基板的反射光独立地检测来自基板的透射光;以及空间分离机构，设置在光学焦平面附近，朝向图案形成表面，并且在空间上分离第一和第二检查光的照射区域，使得来自基板的透射和反射光成像在在光学焦平面上分离的两个离散区域中。

8. 发明申请

US20080030719A1 Inspection apparatus having two sensors, method for inspecting an object, and a method for manufacturing a photolithography mask 审中-公开
标题翻译：具有两个传感器的检查装置，用于检查物体的方法和用于制造光刻掩模的方法
公开(公告)号：US20080030719A1
公开(公告)日：2008-02-07
申请号：US11896146
申请日：2007-08-30
申请人： Hiromu Inoue , Toru Tojo , Takehiko Nomura , Shinichi Imai
发明人： Hiromu Inoue , Toru Tojo , Takehiko Nomura , Shinichi Imai
IPC分类号： G01N21/00
CPC分类号： G01N21/956 , G01N2021/95676
摘要： A photolithography mask inspection apparatus has at least two sensors. One sensor is configured to sense light transmitted through an object to be inspected, and the other sensor senses light reflected off the object. A first optical system is arranged to expose a first portion of the object with a first light beam, and a second optical system is arranged to expose a second portion of the object, spaced form the first portion, with a second light beam. A third optical system focuses the transmitted light on to the first sensor, as well as the reflected light on to the second sensor. A defect detecting circuit is also provided to detect a defect of the object, based upon image data associated with the reflected and transmitted light.
摘要翻译：光刻掩模检查装置具有至少两个传感器。一个传感器被配置为感测通过待检查对象传播的光，另一个传感器感测从物体反射的光。第一光学系统布置成用第一光束曝光物体的第一部分，并且第二光学系统布置成用第二光束暴露出与第一部分间隔开的物体的第二部分。第三光学系统将透射光聚焦到第一传感器，以及将反射光聚焦到第二传感器上。还提供缺陷检测电路，用于基于与反射和透射光相关联的图像数据来检测物体的缺陷。

9. 发明申请

US20060239535A1 Pattern defect inspection method and apparatus 审中-公开
标题翻译：图案缺陷检查方法和装置
公开(公告)号：US20060239535A1
公开(公告)日：2006-10-26
申请号：US11373501
申请日：2006-03-13
申请人： Akira Takada , Toru Tojo
发明人： Akira Takada , Toru Tojo
IPC分类号： H04N7/18 , G06K9/00 , G06K9/62 , G01N21/00
CPC分类号： G03F1/84 , G01N21/95607 , G06K9/00 , G06K2209/19 , G06T7/001 , G06T2207/30148
摘要： A method and an apparatus for irradiating a measurement sample with an energy beam, a pattern being formed in the measurement sample, providing an optical system for detecting transmitted energy beam or reflected energy beam from the measurement sample, obtaining a pattern image, and comparing design data of the pattern and an image of the obtained image pattern to inspect a defect of the pattern formed in the measurement sample, wherein the measurement sample is a so-called photomask, a design pattern produced in producing the photomask is used as the design data of the pattern, and, in a procedure of performing inspection by comparing the obtained image and the design data, the design data is converted into an image (hereinafter referred to as wafer image) by a proper method, the wafer image being formed through a stepper used for actually forming the pattern of the photomask on a wafer, the obtained image actually measured is simultaneously converted into a wafer image by a proper method, and the defect is detected by comparing both wafer images to each other.
摘要翻译：一种用能量束照射测量样品的方法和装置，在测量样品中形成图案，提供用于检测来自测量样品的透射能量束或反射能量束的光学系统，获得图案图像和比较设计图案的数据和所获得的图像图案的图像，以检查在测量样品中形成的图案的缺陷，其中测量样本是所谓的光掩模，使用在制备光掩模中产生的设计图案作为设计数据的图案，并且在通过比较所获得的图像和设计数据进行检查的过程中，通过适当的方法将设计数据转换为图像（以下称为晶片图像），晶片图像通过用于在晶片上实际形成光掩模的图案的步进器，将所获得的实际测量的图像同时转换成晶片图像通过适当的m 并且通过将两个晶片图像彼此进行比较来检测缺陷。

10. 发明申请

US20060087649A1 Defect inspecting apparatus and defect inspection method 失效
标题翻译：缺陷检查装置和缺陷检查方法
公开(公告)号：US20060087649A1
公开(公告)日：2006-04-27
申请号：US11248124
申请日：2005-10-13
申请人： Riki Ogawa , Toru Tojo
发明人： Riki Ogawa , Toru Tojo
IPC分类号： G01N21/88
CPC分类号： G03F1/74 , G01N21/9501 , G01N21/95607
摘要： In a defect inspecting apparatus, an illumination optical system illuminate a mask having a patterned surface, the optical beam passing through the mask is split into two beam components which is guided in first and second image pickup sensors. The pickup sensors has first and second pickup fields on the patterned surface, which pick up first and second parts of the mask image. The first and second pickup fields are parallel to each other and displaced from each other by (2n+1)×d/2 in the longitudinal direction thereof, where d denotes a longitudinal dimension of each pixel image in the first and second pick up fields and n denotes an integer equal to or larger than 0. The first and second parts of the mask image are merged to form a pattern image, and a defect in the mask is detected on the basis of the pattern image.
摘要翻译：在缺陷检查装置中，照明光学系统照射具有图案化表面的掩模，通过掩模的光束被分割成在第一和第二图像拾取传感器中被引导的两个光束分量。拾取传感器在图案化表面上具有第一和第二拾取场，其拾取掩模图像的第一和第二部分。第一拾取场和第二拾取场彼此平行并且在其纵向彼此相互错位（2n + 1）xd / 2，其中d表示第一和第二拾取场中每个像素图像的纵向尺寸， n表示等于或大于0的整数。掩模图像的第一部分和第二部分被合并以形成图案图像，并且基于图案图像检测掩模中的缺陷。

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