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1. 发明申请

US20080030719A1 Inspection apparatus having two sensors, method for inspecting an object, and a method for manufacturing a photolithography mask 审中-公开
标题翻译：具有两个传感器的检查装置，用于检查物体的方法和用于制造光刻掩模的方法
公开(公告)号：US20080030719A1
公开(公告)日：2008-02-07
申请号：US11896146
申请日：2007-08-30
申请人： Hiromu Inoue , Toru Tojo , Takehiko Nomura , Shinichi Imai
发明人： Hiromu Inoue , Toru Tojo , Takehiko Nomura , Shinichi Imai
IPC分类号： G01N21/00
CPC分类号： G01N21/956 , G01N2021/95676
摘要： A photolithography mask inspection apparatus has at least two sensors. One sensor is configured to sense light transmitted through an object to be inspected, and the other sensor senses light reflected off the object. A first optical system is arranged to expose a first portion of the object with a first light beam, and a second optical system is arranged to expose a second portion of the object, spaced form the first portion, with a second light beam. A third optical system focuses the transmitted light on to the first sensor, as well as the reflected light on to the second sensor. A defect detecting circuit is also provided to detect a defect of the object, based upon image data associated with the reflected and transmitted light.
摘要翻译：光刻掩模检查装置具有至少两个传感器。一个传感器被配置为感测通过待检查对象传播的光，另一个传感器感测从物体反射的光。第一光学系统布置成用第一光束曝光物体的第一部分，并且第二光学系统布置成用第二光束暴露出与第一部分间隔开的物体的第二部分。第三光学系统将透射光聚焦到第一传感器，以及将反射光聚焦到第二传感器上。还提供缺陷检测电路，用于基于与反射和透射光相关联的图像数据来检测物体的缺陷。

2. 发明申请

US20050002020A1 Inspection apparatus having two sensors, method for inspecting an object, and a method for manufacturing a photolithography mask 有权
标题翻译：具有两个传感器的检查装置，用于检查物体的方法和用于制造光刻掩模的方法
公开(公告)号：US20050002020A1
公开(公告)日：2005-01-06
申请号：US10852434
申请日：2004-05-25
申请人： Hiromu Inoue , Toru Tojo , Takehiko Nomura , Shinichi Imai
发明人： Hiromu Inoue , Toru Tojo , Takehiko Nomura , Shinichi Imai
IPC分类号： G01N21/956 , G03F1/84 , H01L21/66 , G01N21/88
CPC分类号： G01N21/956 , G01N2021/95676
摘要： A photolithography mask inspection apparatus has at least two sensors. One sensor is configured to sense light transmitted through an object to be inspected, and the other sensor senses light reflected off the object. A first optical system is arranged to expose a first portion of the object with a first light beam, and a second optical system is arranged to expose a second portion of the object, spaced form the first portion, with a second light beam. A third optical system focuses the transmitted light on to the first sensor, as well as the reflected light on to the second sensor. A defect detecting circuit is also provided to detect a defect of the object, based upon image data associated with the reflected and transmitted light.
摘要翻译：光刻掩模检查装置具有至少两个传感器。一个传感器被配置为感测通过待检查对象传播的光，另一个传感器感测从物体反射的光。第一光学系统布置成用第一光束曝光物体的第一部分，并且第二光学系统布置成用第二光束暴露出与第一部分间隔开的物体的第二部分。第三光学系统将透射光聚焦到第一传感器，以及将反射光聚焦到第二传感器上。还提供缺陷检测电路，用于基于与反射和透射光相关联的图像数据来检测物体的缺陷。

3. 发明授权

US07304730B2 Inspection apparatus having two sensors, method for inspecting an object, and a method for manufacturing a photolithography mask 有权
标题翻译：具有两个传感器的检查装置，用于检查物体的方法和用于制造光刻掩模的方法
公开(公告)号：US07304730B2
公开(公告)日：2007-12-04
申请号：US10852434
申请日：2004-05-25
申请人： Hiromu Inoue , Toru Tojo , Takehiko Nomura , Shinichi Imai
发明人： Hiromu Inoue , Toru Tojo , Takehiko Nomura , Shinichi Imai
IPC分类号： G01N21/00
CPC分类号： G01N21/956 , G01N2021/95676
摘要： A photolithography mask inspection apparatus has at least two sensors. One sensor is configured to sense light transmitted through an object to be inspected, and the other sensor senses light reflected off the object. A first optical system is arranged to expose a first portion of the object with a first light beam, and a second optical system is arranged to expose a second portion of the object, spaced form the first portion, with a second light beam. A third optical system focuses the transmitted light on to the first sensor, as well as the reflected light on to the second sensor. A defect detecting circuit is also provided to detect a defect of the object, based upon image data associated with the reflected and transmitted light.
摘要翻译：光刻掩模检查装置具有至少两个传感器。一个传感器被配置为感测通过待检查对象传播的光，另一个传感器感测从物体反射的光。第一光学系统布置成用第一光束曝光物体的第一部分，并且第二光学系统布置成用第二光束暴露出与第一部分间隔开的物体的第二部分。第三光学系统将透射光聚焦到第一传感器，以及将反射光聚焦到第二传感器上。还提供缺陷检测电路，用于基于与反射和透射光相关联的图像数据来检测物体的缺陷。

4. 发明申请

US20050196059A1 Image input apparatus and inspection apparatus 审中-公开
标题翻译：图像输入装置和检查装置
公开(公告)号：US20050196059A1
公开(公告)日：2005-09-08
申请号：US11064014
申请日：2005-02-24
申请人： Hiromu Inoue , Tsuneo Terasawa , Shinichi Imai , Takehiko Nomura
发明人： Hiromu Inoue , Tsuneo Terasawa , Shinichi Imai , Takehiko Nomura
IPC分类号： G01B11/24 , G01N21/956 , G06K9/36 , G06T1/00 , H01L21/66
CPC分类号： G03F7/70616 , G01N21/9501 , G01N21/956 , G01N2021/95676
摘要： An image input apparatus for inputting an image of an object and outputting the image as an electric signal, the image input apparatus comprises a stage which supports the object, a laser interferometer which measures a position of the stage, a light source which emits a pulse light, an illumination optical system which irradiates the object with an illuminating light, a sensor which converts an image-formed optical image into an electric image signal, an imaging optical system which forms an image of the object on the sensor, a synchronization control circuit which controls a light-emission interval of the light source and synchronization of the sensor on the basis of position information of the laser interferometer, a light quantity monitor which measures a quantity of light, and a light quantity correction circuit which corrects the electric image signal on the basis of an output of the light quantity monitor.
摘要翻译：一种用于输入对象的图像并输出图像作为电信号的图像输入装置，所述图像输入装置包括支撑所述对象的平台，测量所述平台位置的激光干涉仪，发出脉冲的光源光，将照明光照射到物体上的照明光学系统，将图像形成的光学图像转换为电子图像信号的传感器，在传感器上形成物体的图像的成像光学系统，同步控制电路其基于激光干涉仪的位置信息，测量光量的光量监视器和校正电图像信号的光量校正电路来控制光源的发光间隔和传感器的同步基于光量监视器的输出。

5. 发明申请

US20100219455A1 III-NITRIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR 审中-公开
标题翻译： III-NITRIDE半导体场效应晶体管
公开(公告)号：US20100219455A1
公开(公告)日：2010-09-02
申请号：US12699957
申请日：2010-02-04
申请人： Yuki Niiyama , Seikoh Yoshida , Takehiko Nomura , Hiroshi Kambayashi
发明人： Yuki Niiyama , Seikoh Yoshida , Takehiko Nomura , Hiroshi Kambayashi
IPC分类号： H01L29/20 , H01L29/78
CPC分类号： H01L29/0847 , H01L29/2003 , H01L29/66659 , H01L29/7835
摘要： An active layer of a first conductive-type includes a channel area. A first contact area and a second contact area of a second conductive-type are formed at positions across the channel area. A source electrode is formed on the first contact area. A drain electrode is formed on the second contact area. A gate electrode is formed above the channel area via a gate insulating layer. A reduced surface field zone of the second conductive-type is formed in the channel area at a position close to the second contact area. Thickness of the reduced surface field zone is 30 nanometers to 100 nanometers.
摘要翻译：第一导电类型的有源层包括沟道区域。第二导电类型的第一接触区域和第二接触区域形成在穿过沟道区域的位置处。源电极形成在第一接触区域上。漏电极形成在第二接触区域上。栅极通过栅极绝缘层形成在沟道区的上方。第二导电类型的减小的表面场区形成在靠近第二接触区域的位置处的通道区域中。还原表面场区的厚度为30纳米至100纳米。

6. 发明申请

US20100219451A1 FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US20100219451A1
公开(公告)日：2010-09-02
申请号：US12648564
申请日：2009-12-29
申请人： Tat-Sing Paul Chow , Takehiko Nomura , Yuki Niiyama , Hiroshi Kambayashi , Seikoh Yoshida
发明人： Tat-Sing Paul Chow , Takehiko Nomura , Yuki Niiyama , Hiroshi Kambayashi , Seikoh Yoshida
IPC分类号： H01L29/78 , H01L21/335
CPC分类号： H01L29/0847 , H01L29/0657 , H01L29/2003 , H01L29/4236 , H01L29/42368 , H01L29/66659 , H01L29/7787 , H01L29/7835
摘要： A p-type nitride compound semiconductor layer is formed on a buffer formed on a substrate. An n-type contact region is formed by ion implantation under a source electrode and a drain electrode. An electric-field reducing layer made of an n-type nitride compound semiconductor is formed on the p-type nitride compound semiconductor layer. A career density of the electric-field reducing layer is lower than that of the n-type contact region. A first end portion of the electric-field reducing layer contacts with the n-type contact region, and a second end portion of the electric-field reducing layer overlaps with a gate electrode.
摘要翻译：在形成在基板上的缓冲液上形成p型氮化物化合物半导体层。在源电极和漏电极下通过离子注入形成n型接触区域。在p型氮化物半导体层上形成由n型氮化物化合物半导体构成的电场减少层。电场降低层的职业密度低于n型接触区域的职业密度。电场减少层的第一端部与n型接触区域接触，并且电场减少层的第二端部与栅电极重叠。

7. 发明申请

US20100210080A1 METHOD OF MANUFACTURING GAN-BASED TRANSISTORS 有权
标题翻译：制造基于GAN的晶体管的方法
公开(公告)号：US20100210080A1
公开(公告)日：2010-08-19
申请号：US12707376
申请日：2010-02-17
申请人： Takehiko Nomura , Nariaki Ikeda , Shusuke Kaya , Sadahiro Kato
发明人： Takehiko Nomura , Nariaki Ikeda , Shusuke Kaya , Sadahiro Kato
IPC分类号： H01L21/336
CPC分类号： H01L29/66522 , H01L29/2003 , H01L29/78
摘要： A method of manufacturing a GaN-based field effect transistor is provided by which a lower resistance and a higher breakdown voltage are obtained and which is less affected by a current collapse. A method of manufacturing the GaN-based field effect transistor(s) can comprise performing an epitaxial growth of an AlN layer (102), of a buffer layer (103), of a channel layer (104), of a drift layer (105) and of an electron supplying layer (106) in such the order on to a substrate (101) respectively; forming a recess part (108) thereon; performing an alloying process for performing an annealing in order to obtain an ohmic contact; forming a passivation layer (113) at a period of performing the annealing in the alloying process in order to protect the electron supplying layer (106) on to a surface of the recess part (108), on to the electron supplying layer (106), on to a source electrode (109) and on to a drain electrode (110), respectively; removing the passivation layer (113); forming a gate insulating film on to a surface at the inner side of the recess part (108), on to the electron supplying layer (106), on to the source electrode (109) and on to the drain electrode (110), respectively; and forming a gate electrode on to the gate insulating film at a part of the recess part (108).
摘要翻译：提供一种制造GaN基场效应晶体管的方法，通过该方法获得较低的电阻和较高的击穿电压，并且其受电流崩溃的影响较小。一种制造GaN基场效应晶体管的方法可以包括执行漂移层（105）的沟道层（104）的缓冲层（103）的AlN层（102）的外延生长）和电子供应层（106）分别依次连接到基板（101）上; 在其上形成凹部（108）; 进行合金化处理以进行退火以获得欧姆接触; 在合金化工艺中进行退火的时间段，以形成钝化层（113），以保护电子供给层（106）到凹部（108）的表面上，到电子供给层（106）上，分别连接到源电极（109）和漏电极（110）上; 去除钝化层（113）; 在所述凹部（108）的内侧的表面上分别在所述电子供给层（106）上向所述源极（109）和所述漏电极（110）分别形成栅极绝缘膜 ; 以及在所述凹部（108）的一部分处在所述栅极绝缘膜上形成栅电极。

8. 发明授权

US06905261B2 Optical fiber module lead frame and optical fiber module 失效
标题翻译：光纤模块引线框架和光纤模块
公开(公告)号：US06905261B2
公开(公告)日：2005-06-14
申请号：US10100283
申请日：2002-03-15
申请人： Sonomi Ishii , Takehiko Nomura , Masayuki Iwase
发明人： Sonomi Ishii , Takehiko Nomura , Masayuki Iwase
IPC分类号： G02B6/42 , G02B6/36
CPC分类号： G02B6/4246 , G02B6/4201 , G02B6/4249 , H01L2224/48091 , H01L2224/48137 , H01L2924/00014
摘要： An optical fiber module lead frame has a plurality of lead terminals. One of the plurality of lead terminals functions as a lead terminal for inputting transmit signals for feeding electricity to a light emitting device from outside. One of the other lead terminals functions as a lead terminal for outputting received signals for sending electrical signals outputted from a photodetector to outside. An electric field between the lead terminal for inputting transmit signals and the lead terminal for outputting received signals is one source of crosstalk from the light emitting device side to the photodetector side. Then, provided is the configuration of suppressing the electric field between the lead terminal for inputting transmit signals and the lead terminal for outputting received signals.
摘要翻译：光纤模块引线框架具有多个引线端子。多个引线端子中的一个用作用于从外部输入用于向发光器件供电的发送信号的引线端子。其他引线端子中的一个用作用于将从光电检测器输出的电信号发送到外部的接收信号的引线端子。用于输入发送信号的引线端子和用于输出接收信号的引线端子之间的电场是从发光器件侧到光电检测器侧的串扰的一个源。然后，提供抑制用于输入发送信号的引线端子与用于输出接收信号的引线端子之间的电场的结构。

9. 发明授权

US5926585A Waveguide type light receiving element 失效
标题翻译：波导型光接收元件
公开(公告)号：US5926585A
公开(公告)日：1999-07-20
申请号：US849189
申请日：1997-07-18
申请人： Michinori Irikawa , Kazuaki Nishikata , Takehiko Nomura
发明人： Michinori Irikawa , Kazuaki Nishikata , Takehiko Nomura
IPC分类号： H01L31/10 , G02F1/017 , H01L31/0232 , H01L31/109 , G02B6/12
CPC分类号： H01L31/109 , B82Y20/00 , H01L31/0232 , G02F1/01708 , G02F2001/01766
摘要： A waveguide type light receiving element (10) comprises a photodetector section (14), a photo-attenuator section (18), and an electrical isolation section (20) having a light transmission property which electrically isolates the photodetector section from the photo-attenuator section for allowing light transmission. The photodetector section comprises n-type light guide layer (28) and i-type light absorption layer (30) formed on a substrate (22), and a pair of n- and p-type light confinement layers (26 and 32) which sandwich the light guide layer and the light absorption layer therebetween, thereby forming a double hetero junction structure. The photo-attenuator section has a layer structure similar to the photodetector section except for a strained MQW layer disposed instead of the light absorption layer and has an absorption controlling electrode (16) and an electrode (40) disposed on the top and bottom, respectively, of the substrate. The light absorption layer and the waveguide of the photodetector section and the photo-attenuator section form a ridge structure to have a light confinement structure in a horizontal direction as well as a light confinement structure in a vertical direction. By applying a reverse bias voltage between the electrodes of the photo-attenuator section, the amount of absorption of the incident light by the photo-attenuator section can be controlled, thereby controlling the intensity of light propagated to the photodetector section.
摘要翻译： PCT No.PCT / JP96 / 02425 Sec。 371日期1997年7月18日 102（e）1997年7月18日PCT PCT 1996年8月29日PCT公布。公开号WO97 / 08757 日期1997年3月6日一种波导型光接收元件（10）包括光电检测器部分（14），光衰减器部分（18）和具有光透射特性的电隔离部分（20），其将光电检测器部分来自用于允许光透射的光衰减器部分。光电检测器部分包括形成在基板（22）上的n型光导层（28）和i型光吸收层（30），以及一对n型和p型光限制层（26和32），其中将导光层和光吸收层夹在其间，由此形成双异质结结构。光衰减器部分具有类似于光检测器部分的层结构，除了代替光吸收层设置的应变MQW层，并且分别具有设置在顶部和底部的吸收控制电极（16）和电极（40）的底物。光检测器部分和光衰减器部分的光吸收层和波导形成了在垂直方向上具有在水平方向上的光限制结构和光限制结构的脊结构。通过在光衰减器部分的电极之间施加反向偏置电压，可以控制光衰减器部分的入射光的吸收量，从而控制传播到光电检测器部分的光的强度。

10. 发明授权

US5087307A Method of manufacturing semiconductor substrate 失效
标题翻译：制造半导体基板的方法
公开(公告)号：US5087307A
公开(公告)日：1992-02-11
申请号：US620450
申请日：1990-12-03
申请人： Takehiko Nomura , Yoshinori Natsume , Yoshinori Hosoki
发明人： Takehiko Nomura , Yoshinori Natsume , Yoshinori Hosoki
IPC分类号： B24B9/06 , H01L21/02 , H01L21/18 , H01L21/20 , H01L21/208 , H01L21/304 , H01L29/06
CPC分类号： H01L21/02008 , B24B9/065 , H01L21/187 , H01L29/0657 , Y10T156/1064
摘要： A method of manufacturing a semiconductor substrate comprises a first step of preparing one hundred silicon bodies each having two silicon wafers held together by cohesion after polishing and heating processes. The method further comprises a second step of stacking the silicon bodies in their thickness direction to form a stacked body, and a third step of cylindrically grinding the side surface of the stacked body by a predetermined amount.
摘要翻译：制造半导体衬底的方法包括：第一步骤，通过在抛光和加热工艺之后通过内聚制备每个具有两个硅晶片的硅体。该方法还包括在其厚度方向堆叠硅体以形成层叠体的第二步骤，以及将堆叠体的侧表面圆柱形研磨预定量的第三步骤。

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