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1. 发明授权

US4808258A Plasma processing method and apparatus for carrying out the same 失效
标题翻译：等离子体处理方法及其执行装置
公开(公告)号：US4808258A
公开(公告)日：1989-02-28
申请号：US662014
申请日：1984-10-18
申请人： Toru Otsubo , Susumu Aiuchi , Takashi Kamimura , Minoru Noguchi , Teru Fujii
发明人： Toru Otsubo , Susumu Aiuchi , Takashi Kamimura , Minoru Noguchi , Teru Fujii
IPC分类号： H01L21/302 , C23C16/517 , H01J37/32 , C23F1/02 , H01L21/306
CPC分类号： H01J37/32146 , C23C16/517 , H01J37/32155 , H01J37/32165
摘要： A plasma processing method and an apparatus for carrying out the method in which a processing gas is introduced into a processing chamber, and periodically an amplitude modulated or frequency-modulated high-frequency voltage is applied to plasma generating means, to generate a discharge plasma and to carry out predetermined processing by the plasma.
摘要翻译：一种等离子体处理方法和装置，用于执行将处理气体引入处理室，并周期性地将调幅或调频的高频电压施加到等离子体产生装置，以产生放电等离子体和以进行等离子体的预定处理。

2. 发明授权

US4487678A Dry-etching apparatus 失效
标题翻译：干式蚀刻装置
公开(公告)号：US4487678A
公开(公告)日：1984-12-11
申请号：US597749
申请日：1984-04-06
申请人： Minori Noguchi , Toru Otsubo , Susumu Aiuchi , Takashi Kamimura , Teru Fujii
发明人： Minori Noguchi , Toru Otsubo , Susumu Aiuchi , Takashi Kamimura , Teru Fujii
IPC分类号： H01J37/18 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/677 , C23C15/00
CPC分类号： H01L21/302 , H01J37/185 , H01L21/67069 , H01L21/67126 , H01L21/67745
摘要： The invention is directed to a dry-etching apparatus used for etching an aluminum wiring film formed on a wafer, and more particularly to a dry-etching apparatus which can remove chlorides deposited on the surface of the wafer during the dry etching thereof, as well as an etching resist film, without having to take the wafer out. This dry-etching apparatus is provided with an etching chamber, a vacuum antechamber attached to the etching chamber by a gate valve, and a post-treatment chamber attached to the vacuum antechamber. The apparatus is so formed that etched wafers removed to the vacuum antechamber can be sent therefrom to the post-treatment chamber, and then the post-treated wafers can be removed to the vacuum antechamber again, and then removed therefrom to the atmosphere.
摘要翻译：本发明涉及一种用于蚀刻形成在晶片上的铝布线膜的干蚀刻装置，更具体地说涉及一种能够在其干蚀刻期间去除沉积在晶片表面上的氯化物的干蚀刻装置，以及作为抗蚀剂膜，而不必将晶片取出。该干式蚀刻装置设置有蚀刻室，通过闸阀附着到蚀刻室的真空室以及与真空前厅连接的后处理室。该设备被形成为将去除到真空前厅的蚀刻的晶片从其中被送到后处理室，然后将经后处理的晶片再次移至真空前厅，然后从其中移除到大气中。

3. 发明授权

US4479848A Etching method and apparatus 失效
标题翻译：蚀刻方法和装置
公开(公告)号：US4479848A
公开(公告)日：1984-10-30
申请号：US579941
申请日：1984-02-14
申请人： Toru Otsubo , Susumu Aiuchi , Takashi Kamimura
发明人： Toru Otsubo , Susumu Aiuchi , Takashi Kamimura
IPC分类号： C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/306 , B44C1/22 , C03C15/00 , C23F1/02
CPC分类号： H01J37/32935 , H01L21/302
摘要： The present invention consists in an etching method and apparatus wherein an optical image which is reflected from a region of a dicing stripe pattern on a substrate to-be-etched, such as a semiconductor wafer, is focused by a projecting optical system during selective etching. The focused pattern is converted into an image signal by an image detector, and a change of contrast in the region of the dicing stripe pattern is determined from the image signal. Based on this, an ending time for the etching can be decided from the change of contrast.
摘要翻译：本发明是一种蚀刻方法和装置，其中在选择性刻蚀中通过投影光学系统聚焦由半导体晶片等待刻蚀的基板上的切割条纹图案的区域反射的光学图像。通过图像检测器将聚焦图案转换为图像信号，并根据图像信号确定切割条纹图案区域中的对比度变化。基于此，可以根据对比度的变化来确定蚀刻的结束时间。

4. 发明授权

US4420233A Projecting apparatus 失效
标题翻译：投影仪
公开(公告)号：US4420233A
公开(公告)日：1983-12-13
申请号：US381675
申请日：1982-05-24
申请人： Mineo Nomoto , Katsuhiro Iwashita , Toru Otsubo , Susumu Aiuchi
发明人： Mineo Nomoto , Katsuhiro Iwashita , Toru Otsubo , Susumu Aiuchi
IPC分类号： G03B13/36 , G02B7/28 , G03B3/10 , G03F7/20 , G03F7/207 , G03F9/00 , H01L21/027 , H01L21/30 , G03B27/34 , G03B21/28
CPC分类号： G03F7/70891 , G03B3/10 , G03F9/70
摘要： A projecting apparatus for forming an image of a mask on a wafer by a projector of a unit magnification reflection system having a concave spherical mirror and a convex spherical mirror. The distance from the projector to the mask or the upper side of a mask holder for holding the mask and the distance from the projector to the wafer are measured. An error of the image-forming position is computed from the distance measurements. At least one of the mask, the wafer and the projector is moved along the direction of projection in a manner to eliminate the error of the image-forming position computed, thus attaining automatic focus adjustment.
摘要翻译：一种用于通过具有凹球面镜和凸球面镜的单元放大反射系统的投影仪在晶片上形成掩模图像的投影设备。测量从投影仪到掩模的距离或用于保持面罩的掩模支架的上侧以及从投影仪到晶片的距离。从距离测量计算图像形成位置的误差。掩模，晶片和投影仪中的至少一个沿着投影方向移动，以消除所计算的图像形成位置的误差，从而获得自动聚焦调整。

5. 发明授权

US4744660A Apparatus for measuring difference in shallow level 失效
标题翻译：用于测量浅层差异的装置
公开(公告)号：US4744660A
公开(公告)日：1988-05-17
申请号：US850683
申请日：1986-04-11
申请人： Minori Noguchi , Toru Otsubo , Susumu Aiuchi
发明人： Minori Noguchi , Toru Otsubo , Susumu Aiuchi
IPC分类号： G01B11/22 , G01B9/02
CPC分类号： G01B11/22
摘要： An apparatus for measuring a difference in level in a sample comprises a light source section which provides illumination light of a variable-wavelength. The illumination light is irradiated onto the sample. A group of filters is provided for shielding diffraction light rays of O-order or other than O-order of the light reflected from the sample. The intensity of interference light of the light rays not shielded by the filter group is detected by a light detector which in turn converts it into an electric signal. An arithmetic operation unit receives the electric signal while the wavelength of the illumination light from the light source section is continuously varied. In the arithmetic unit, wavelengths at which the electric signal or detected light intensity takes extreme values are determined, and the level difference in the sample is determined on the basis of those wavelengths.
摘要翻译：用于测量样品中的电平差的装置包括提供可变波长的照明光的光源部分。将照明光照射到样品上。提供了一组滤光器，用于屏蔽从样品反射的光的O级或O级的衍射光线。不被滤光器组屏蔽的光线的干涉光的强度由光检测器检测，光检测器又将其转换为电信号。算术运算单元接收电信号，同时来自光源部分的照明光的波长连续变化。在算术单元中，确定电信号或检测光强取极值的波长，并根据这些波长确定样本中的电平差。

6. 发明授权

US4615620A Apparatus for measuring the depth of fine engraved patterns 失效
标题翻译：用于测量精细雕刻图案深度的装置
公开(公告)号：US4615620A
公开(公告)日：1986-10-07
申请号：US685550
申请日：1984-12-24
申请人： Minori Noguchi , Toru Otsubo , Susumu Aiuchi
发明人： Minori Noguchi , Toru Otsubo , Susumu Aiuchi
IPC分类号： G01B11/22
CPC分类号： G01B11/22
摘要： An apparatus for measuring in a non-contact manner the depth of pits and grooves formed by etching in periodic patterns on the surface of a substrate. The measurement is based on the detection of the intensity of a diffraction ray excluding that of the 0th order through the irradiation of a light beam with variable wave length to the sample. Whereas, the conventional measuring system is sensitive to a diffraction ray of the 0th order, i.e., the major component of the reflected light, that hampers the detection of a higher order diffraction ray carrying information of the depth.
摘要翻译：一种用于以非接触方式测量在衬底的表面上以周期性图案蚀刻形成的凹坑和凹槽的深度的装置。该测量基于通过对样品照射具有可变波长的光束而不考虑第0级的衍射强度的检测。而传统的测量系统对第0级的衍射光线（即反射光的主要分量）敏感，这阻碍了检测到承载深度信息的较高阶衍射光线。

7. 再颁专利

USRE33424E Apparatus and method for measuring the depth of fine engraved patterns 失效
标题翻译：用于测量精细雕刻图案深度的装置和方法
公开(公告)号：USRE33424E
公开(公告)日：1990-11-06
申请号：US254964
申请日：1988-10-07
申请人： Minori Noguchi , Toru Otsubo , Susumu Aiuchi
发明人： Minori Noguchi , Toru Otsubo , Susumu Aiuchi
IPC分类号： G01B11/22
CPC分类号： G01B11/22
摘要： An apparatus .Iadd.and method .Iaddend.for measuring in a non-contact manner the depth of pits and grooves formed by etching in periodic patterns on the surface of a substrate. The measurement is based on the detection of the intensity of a diffraction ray excluding that of the 0th order through the irradiation of a light beam with variable wave length to the sample. Whereas, the conventional measuring system is sensitive to a diffraction ray of the 0th order, i.e., the major component of the reflected light, that hampers the detection of a higher order diffraction ray carrying information of the depth.

8. 发明授权

US4840487A Measuring apparatus for etching pits 失效
标题翻译：用于蚀刻凹坑的测量装置
公开(公告)号：US4840487A
公开(公告)日：1989-06-20
申请号：US875980
申请日：1986-06-19
申请人： Minori Noguchi , Toru Otsubo , Susumu Aiuchi
发明人： Minori Noguchi , Toru Otsubo , Susumu Aiuchi
IPC分类号： H01L21/66 , G01B11/00 , G01B11/22 , H01J37/32
CPC分类号： H01J37/32935 , G01B11/22
摘要： An apparatus for measuring dry etching pits formed in a semiconductor device during the manufacture thereof by employing optical means. Wiring on semiconductor devices increasingly become fine or minute, i.e., the size of wiring of some devices is less than 1 .mu.m. A technical matter to be solved is to effect highly accurate dimensional measurement in such submicron region. The apparatus has a .theta. stage which is additionally provided on an XY stage, and a mechanism which provides excellent selectivity in detection of interference intensity of diffracted beam. In addition, a short wavelength laser, such as a He-Ne, He-Cd, N.sub.2 or Ar laser, is employed as a laser source. As a practical advantage, it is possible to monitor etching of a pit with a depth on the order of 10 .mu.m with respect to a pattern with a planar dimension of 0.3 .mu.m to 1.0 .mu.m.
摘要翻译：一种用于测量在其制造期间在半导体器件中形成的干蚀刻凹坑的装置，其通过采用光学装置。半导体器件上的布线越来越细微或微小，即某些器件的布线尺寸小于1μm。要解决的技术问题是在这样的亚微米区域中实现高度精确的尺寸测量。该装置具有另外设置在XY平台上的θ级，以及在检测衍射光束的干涉强度方面提供优异的选择性的机构。此外，使用诸如He-Ne，He-Cd，N2或Ar激光器的短波长激光器作为激光源。作为实际的优点，可以相对于平面尺寸为0.3μm〜1.0μm的图案来监视深度为10μm左右的凹坑的蚀刻。

9. 发明授权

US5759424A Plasma processing apparatus and processing method 失效
标题翻译：等离子体处理装置及处理方法
公开(公告)号：US5759424A
公开(公告)日：1998-06-02
申请号：US409077
申请日：1995-03-22
申请人： Mitsuko Imatake , Ichiro Sasaki , Toru Otsubo , Hitoshi Tamura , Takashi Kamimura
发明人： Mitsuko Imatake , Ichiro Sasaki , Toru Otsubo , Hitoshi Tamura , Takashi Kamimura
IPC分类号： H01J37/32 , H05H1/00 , G01N21/00
CPC分类号： H01J37/32935 , H01J37/3299
摘要： A plasma processing apparatus is provided with a processing chamber having at least a pair of opposing windows to allow observation of the interior thereof, a plasma generation unit for generating a plasma in the processing chamber, a plasma light emission monitoring unit arranged externally of the processing chamber for monitoring the light emission of the plasma through one of the pair of opposing windows, a reference light irradiation unit for irradiating a reference light to the plasma light emission monitoring unit from that window of the pair of opposing windows which is opposite to the plasma light emission monitoring unit through the pair of opposing windows, and a control for controlling a plasma processing state of the substrate to be processed by comparing the data on the light emission of the plasma monitored by the plasma light emission unit and the reference light.
摘要翻译：等离子体处理装置具有处理室，该处理室具有至少一对相对的窗口以允许观察其内部;等离子体产生单元，用于在所述处理室中产生等离子体;等离子体发光监测单元，其布置在所述处理的外部用于通过所述一对相对窗口中的一个监视等离子体的发光的参考光照射单元，用于从与所述等离子体相对的所述一对相对窗口的所述窗口向等离子体发光监测单元照射参考光通过一对相对窗口的发光监视单元，以及用于通过比较由等离子体发光单元监视的等离子体的发光的数据和参考光来控制待处理的基板的等离子体处理状态的控制。

10. 发明申请

US20060144518A1 Plasma processing apparatus and plasma processing method 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20060144518A1
公开(公告)日：2006-07-06
申请号：US11366621
申请日：2006-03-03
申请人： Tetsunori Kaji , Shinichi Tachi , Toru Otsubo , Katsuya Watanabe , Katsuhiko Mitani , Junichi Tanaka
发明人： Tetsunori Kaji , Shinichi Tachi , Toru Otsubo , Katsuya Watanabe , Katsuhiko Mitani , Junichi Tanaka
IPC分类号： C23F1/00
CPC分类号： H01J37/32082 , H01J37/32623 , H01J37/32678 , H01L21/67069
摘要： A plasma processing apparatus includes a vacuum processing chamber having a pair of opposing electrodes for plasma generation, one electrode serving as a sample table for a sample including an insulator film. An electrostatic adsorption film is arranged at the sample table electrode to supply a thermal conductive gas between the film and the sample rear surface. A pressure reducing element is also provided. In addition, arrangements are provided to set a gas pressure within said vacuum processing chamber to 0.5 to 4.0 Pa and to apply a high frequency power of 30 MHz to 200 MHz between the electrodes. An electrode cover is disposed at the other electrode, and a clearance between the electrodes is 30 mm to 100 mm. The electrode cover includes fine apertures to introduce a fluorine-containing etching gas, and a power supply accelerates ions in the plasma
摘要翻译：等离子体处理装置包括具有一对用于等离子体产生的相对电极的真空处理室，一个用作用于包括绝缘膜的样品的样品台的电极。在样品台电极处设置静电吸附膜，以在膜和样品后表面之间提供导热气体。还提供减压元件。此外，提供了将所述真空处理室内的气体压力设定为0.5〜4.0Pa并在电极之间施加30MHz〜200MHz的高频功率的结构。电极盖设置在另一个电极处，电极间的间隙为30mm至100mm。电极盖包括用于引入含氟蚀刻气体的细孔，并且电源加速等离子体中的离子

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