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1. 发明授权

US07821335B2 Semiconductor integrated circuit with variable gain amplifier 有权
标题翻译：具有可变增益放大器的半导体集成电路
公开(公告)号：US07821335B2
公开(公告)日：2010-10-26
申请号：US12252554
申请日：2008-10-16
申请人： Nobuhiro Shiramizu , Toru Masuda
发明人： Nobuhiro Shiramizu , Toru Masuda
IPC分类号： H03F1/24
CPC分类号： H03F3/50 , H03F1/342 , H03F3/195 , H03F2200/135 , H03F2200/18 , H03F2200/294 , H03F2200/451 , H03F2203/5036 , H03G1/0023
摘要： The variable gain amplifier includes a bias circuit (BC) 1, a matching circuit (MC) 2, a variable gain resistive feedback amplifier (FA) 3 and an output follower (EA) 4. The resistance values of the load resistance Rc and feedback resistance Rf are changed in cooperation. In a case of making the load resistance Rc a high resistance to set the low noise amplifier to a high gain, the feedback resistance Rf is also made a high resistance, the feedback time constant τfb(c1)≈2π·RfCbe/(1+gmRc) of the closed loop of the resistive negative feedback amplifier 3 becomes substantially constant, and then the amplifier has a gain small in frequency dependency over a wide bandwidth. In a case of making the load resistance Rc a low resistance to set the low noise amplifier to a low gain, the feedback resistance Rf is also made a low resistance. The feedback resistance Rf with the low resistance increases the negative feedback quantity, and thus the amplifier is set to a low gain. Also, the load resistance Rc is made a low resistance, and the feedback time constant τfb(c1) becomes substantially constant. The gain is not lowered further in a high frequency region.
摘要翻译：可变增益放大器包括偏置电路（BC）1，匹配电路（MC）2，可变增益电阻反馈放大器（FA）3和输出跟随器（EA）4.负载电阻Rc和反馈的电阻值电阻Rf随之改变。在使负载电阻Rc为高电平的情况下，将低噪声放大器设定为高增益的情况下，反馈电阻Rf也变为高电阻，反馈时间常数τfb（c1）≈2＆pgr·RfCbe /（1 电阻性负反馈放大器3的闭环的+ gmRc变得基本恒定，然后放大器在宽带宽上具有小的频率依赖性的增益。在将负载电阻Rc设置为低电阻以将低噪声放大器设置为低增益的情况下，反馈电阻Rf也被制成低电阻。具有低电阻的反馈电阻Rf增加负反馈量，因此放大器被设置为低增益。此外，使负载电阻Rc为低电阻，反馈时间常数τfb（c1）变得基本恒定。增益在高频区域不会进一步降低。

2. 发明授权

US4493526A Jack 失效
标题翻译：插口
公开(公告)号：US4493526A
公开(公告)日：1985-01-15
申请号：US458518
申请日：1983-01-17
申请人： Toru Masuda
发明人： Toru Masuda
IPC分类号： H01R13/703 , H01R13/71 , H01R17/18
CPC分类号： H01R24/58 , H01R2107/00
摘要： In a jack in which a movable contact piece mounted therein is displaced by a plug inserted thereinto and a coiled spring for supplementing the resiliency of the movable contact piece is interposed between a movable part of the movable contact piece and the body of the jack, there is disposed a spring holder between the movable part and the body, whereby the coiled spring is held and excessive displacement of the movable part is prevented.
摘要翻译：在其中安装在其中的可移动接触片通过插入其中的插塞而移位的插座中，并且用于补充可动触头的弹性的螺旋弹簧介于可动触头的可移动部分和插座主体之间在可动部和主体之间设置有弹簧保持架，由此可以保持螺旋弹簧，防止可动部的过度位移。

3. 发明授权

US4393283A Jack with plug actuated slide switch 失效
标题翻译：插头带插头式滑动开关
公开(公告)号：US4393283A
公开(公告)日：1983-07-12
申请号：US271945
申请日：1981-06-09
申请人： Toru Masuda
发明人： Toru Masuda
IPC分类号： H01R13/703 , H01H13/50 , H01H15/10 , H01H9/02
CPC分类号： H01H13/503 , H01H15/10 , H01R2103/00 , H01R24/58
摘要： A jack for receiving a plug includes a detachable slide switch operated by a contact strip which engages the plug. Additional slide switches may be nested below the first slide switch, the entire stack being operated by the contact strip as the plug is inserted in the jack.
摘要翻译：用于接收插头的插座包括由接合插头操作的可拆卸滑动开关。附加的滑动开关可以嵌套在第一滑动开关下方，当插头插入插孔时，整个叠层由接触片操作。

4. 发明申请

US20090102552A1 SEMICONDUCTOR INTEGRATED CIRCUIT WITH VARIABLE GAIN AMPLIFIER 有权
标题翻译：具有可变增益放大器的半导体集成电路
公开(公告)号：US20090102552A1
公开(公告)日：2009-04-23
申请号：US12252554
申请日：2008-10-16
申请人： Nobuhiro SHIRAMIZU , Toru Masuda
发明人： Nobuhiro SHIRAMIZU , Toru Masuda
IPC分类号： H03F3/68
CPC分类号： H03F3/50 , H03F1/342 , H03F3/195 , H03F2200/135 , H03F2200/18 , H03F2200/294 , H03F2200/451 , H03F2203/5036 , H03G1/0023
摘要： The variable gain amplifier includes a bias circuit (BC) 1, a matching circuit (MC) 2, a variable gain resistive feedback amplifier (FA) 3 and an output follower (EA) 4. The resistance values of the load resistance Rc and feedback resistance Rf are changed in cooperation. In a case of making the load resistance Rc a high resistance to set the low noise amplifier to a high gain, the feedback resistance Rf is also made a high resistance, the feedback time constant τfb(c1)≈2π·RfCbe/(1+gmRc) of the closed loop of the resistive negative feedback amplifier 3 becomes substantially constant, and then the amplifier has a gain small in frequency dependency over a wide bandwidth. In a case of making the load resistance Rc a low resistance to set the low noise amplifier to a low gain, the feedback resistance Rf is also made a low resistance. The feedback resistance Rf with the low resistance increases the negative feedback quantity, and thus the amplifier is set to a low gain. Also, the load resistance Rc is made a low resistance, and the feedback time constant τfb(c1) becomes substantially constant. The gain is not lowered further in a high frequency region.
摘要翻译：可变增益放大器包括偏置电路（BC）1，匹配电路（MC）2，可变增益电阻反馈放大器（FA）3和输出跟随器（EA）4.负载电阻Rc和反馈的电阻值电阻Rf随之改变。在使负载电阻Rc为高电平的情况下，将低噪声放大器设定为高增益的情况下，反馈电阻Rf也变为高电阻，反馈时间常数τfb（c1）≈2pi.RfCbe/（1+ 电阻性负反馈放大器3的闭环的gmRc变得基本恒定，然后放大器在宽带宽上具有小的频率依赖性的增益。在将负载电阻Rc设置为低电阻以将低噪声放大器设置为低增益的情况下，反馈电阻Rf也被制成低电阻。具有低电阻的反馈电阻Rf增加负反馈量，因此放大器被设置为低增益。此外，使负载电阻Rc为低电阻，反馈时间常数τfb（c1）变得基本恒定。增益在高频区域不会进一步降低。

5. 发明申请

US20080122546A1 VARIABLE FREQUENCY OSCILLATOR AND COMMUNICATION CIRCUIT WITH IT 失效
标题翻译：可变频率振荡器及其通信电路
公开(公告)号：US20080122546A1
公开(公告)日：2008-05-29
申请号：US11771403
申请日：2007-06-29
申请人： Nobuhiro SHIRAMIZU , Toru Masuda
发明人： Nobuhiro SHIRAMIZU , Toru Masuda
IPC分类号： H03L7/099 , H03K3/03
CPC分类号： H03L7/0995 , H03K3/0322 , H03K3/35613 , H03K5/133 , H03K2005/00208 , H03K2005/00234 , H03L1/00 , H03L7/0891 , H03L7/18 , H03M9/00
摘要： In a variable frequency oscillator in a semiconductor device, as the variation of an oscillation frequency caused by the variation of temperature and supply voltage and process variation is large, it is difficult to reduce the conversion ratio of control voltage dependent upon phase noise and the oscillation frequency and therefore, phase noise is large. The variation of the oscillation frequency is suppressed and phase noise is reduced by connecting a voltage-to-current conversion circuit that converts input control voltage to control current of a ring oscillator to the ring oscillator where delay circuits a delay time of which increases and decreases according to the amplitude of input control current are cascade-connected by a plurality of stages in a ring and increasing/decreasing current dependent upon any of temperature, supply voltage and the threshold voltage of a transistor inside the voltage-to-current conversion circuit.
摘要翻译：在半导体器件的可变频率振荡器中，随着由温度和电源电压的变化引起的振荡频率的变化和工艺变化的变化大，难以根据相位噪声和振荡来降低控制电压的转换比因此，相位噪声较大。通过连接将输入控制电压转换为环形振荡器的控制电流的电压 - 电流转换电路，振荡频率的变化被抑制，并且相位噪声减小，其中延迟电路的延迟时间增加和减小根据输入控制电流的幅度通过环中的多个级级联连接，并且取决于电压 - 电流转换电路内的晶体管的温度，电源电压和阈值电压中的任一个的增加/减少电流。

6. 发明申请

US20070103248A1 Oscillator and data processing equipment using the same and voltage control oscillator and data processing equipment using voltage control oscillator 失效
标题翻译：振荡器和数据处理设备使用相同的压控振荡器和数据处理设备使用压控振荡器
公开(公告)号：US20070103248A1
公开(公告)日：2007-05-10
申请号：US11594102
申请日：2006-11-08
申请人： Takahiro Nakamura , Toru Masuda , Tomomitsu Kitamura , Norio Hayashi , Hiroshi Mori
发明人： Takahiro Nakamura , Toru Masuda , Tomomitsu Kitamura , Norio Hayashi , Hiroshi Mori
IPC分类号： H03B5/08
CPC分类号： H03J3/20 , H03B5/1215 , H03B5/1218 , H03B5/1228 , H03B5/1231 , H03B5/1243 , H03B5/1253 , H03B5/1265 , H03B5/1293 , H03B5/1296 , H03B2201/0208 , H03B2201/0216 , H03D3/007 , H03J2200/10
摘要： An LC resonant circuit of an oscillator includes a parallel circuit of an inductor, a first fine adjustable capacitor and a first capacitor bank, and a series circuit of a second fine adjustable capacitor and a second capacitor bank. A frequency conversion gain of the oscillator is the sum of a frequency conversion gain of the oscillator based upon the first fine adjustable capacitor which decreases according to increase of a capacitance value of the capacitor bank and a frequency conversion gain based upon the second fine adjustable capacitor which increases according to increase of a capacitance value of the second capacitor bank. Accordingly, an LC resonant circuit for an oscillator with reduced fluctuation of a frequency conversion gain, and an oscillator and a data processing equipment using the same are provided.
摘要翻译：振荡器的LC谐振电路包括电感器的并联电路，第一微调可调电容器和第一电容器组，以及第二精细可调电容器和第二电容器组的串联电路。振荡器的变频增益是基于根据电容器组的电容值的增加而减小的第一微调电容器的振荡器的频率转换增益和基于第二微调电容器的频率转换增益的和其根据第二电容器组的电容值的增加而增加。因此，提供了一种用于具有降低的变频增益波动的振荡器的LC谐振电路，以及使用其的振荡器和数据处理设备。

7. 发明授权

US07177612B2 Frequency generator and communication system using the same 失效
标题翻译：频率发生器和通信系统使用相同
公开(公告)号：US07177612B2
公开(公告)日：2007-02-13
申请号：US10901966
申请日：2004-07-30
申请人： Takahiro Nakamura , Kenichi Ohhata , Toru Masuda
发明人： Takahiro Nakamura , Kenichi Ohhata , Toru Masuda
IPC分类号： H04B7/00 , H04B1/18 , H04B1/16
CPC分类号： H03F3/345 , H03B5/1215 , H03B5/1221 , H03B5/1228 , H03B5/1231 , H03B5/1243 , H03F1/30 , H03F3/3435 , H03F3/4508 , H03F3/50 , H03F2200/372 , H03F2203/45264
摘要： A frequency generator which can perform stable frequency oscillation unaffected by temperature variation.A frequency generator having a differential amplifier (1) having an LC resonance circuit (10) as a load and buffer circuits (21, 22) feeding back an output of the differential amplifier to its input, wherein a temperature coefficient converter (5) converting an output voltage of a reference voltage generator (4) and its temperature dependence to a voltage having a predetermined voltage and temperature coefficient and outputting it is provided to control bias currents IEF of emitter follower circuits to be in proportion to temperature variation. There are a characteristic in which delay time of the emitter follower circuits constructing the buffer circuits is in inverse proportion to a transconductance of transistors and a characteristic in which the transconductance is in inverse proportion to temperature and is in proportion to the bias currents IEF. An oscillation frequency stable to temperature variation can be obtained.
摘要翻译：频率发生器，可以进行不受温度变化影响的稳定频率振荡。一种频率发生器，具有作为负载的LC谐振电路（10）的差分放大器（1）和将差分放大器的输出反馈到其输入端的缓冲电路（21,22），其中温度系数转换器（5）转换参考电压发生器（4）的输出电压及其与具有预定电压和温度系数的电压的温度依赖性并输出，以将射极跟随器电路的偏置电流IEF控制为与温度变化成比例。构成缓冲电路的射极跟随器电路的延迟时间与晶体管的跨导成反比的特性以及跨导与温度成反比并与偏置电流IEF成比例的特性。可以得到温度变化稳定的振荡频率。

8. 发明申请

US20060261902A1 Voltage controlled oscillator and wireless transceiver using the same 有权
公开(公告)号：US20060261902A1
公开(公告)日：2006-11-23
申请号：US11435757
申请日：2006-05-18
申请人： Toru Masuda , Hiroshi Mori
发明人： Toru Masuda , Hiroshi Mori
IPC分类号： H03B5/12
CPC分类号： H03B5/1231 , H03B5/1215 , H03B5/1243 , H03B5/1265 , H03B2201/0208 , H03J2200/10
摘要： The capacitance of the capacitor with the constant capacitance is equivalently reduced in the capacitance of a resonant capacitor in a voltage control oscillator to increase the variable amount of the capacitance of the resonant capacitor, and to expand an oscillation frequency range. There are provided a differential negative conductance generator circuit having two resonation nodes for differential output, a differential resonant circuit having a variable capacitance that is controlled by voltage control and an inductance connected in parallel to each other, and a differential negative impedance circuit. A resonant circuit and a negative impedance circuit are connected between the resonation nodes. The capacitor with the constant capacitance that occurs between the resonation nodes is reduced by the negative impedance of the negative impedance circuit. The capacitor with the constant capacitance is represented by floating capacitors that occur between one of the resonation nodes and a ground potential and between the other resonation node and the ground potential, respectively.

9. 发明授权

US06785477B1 Optical receiver using variable negative-capacitance circuit 失效
标题翻译：光接收机采用可变负电容电路
公开(公告)号：US06785477B1
公开(公告)日：2004-08-31
申请号：US09646509
申请日：2000-09-19
申请人： Toru Masuda , Katsuyoshi Washio , Taizo Yoshikawa , Eiji Ohue , Kenichi Ohhata
发明人： Toru Masuda , Katsuyoshi Washio , Taizo Yoshikawa , Eiji Ohue , Kenichi Ohhata
IPC分类号： H04B1006
CPC分类号： H04B10/6932 , H03F3/08 , H03F3/082 , H03F3/343 , H03F3/3432 , H03F3/345 , H04B10/6931
摘要： A large time constant is caused due to parasitic capacitance at an anode terminal of a photodetector of an optical receiver. Therefore, an optical receiver wherein a variable negative capacitor mainly including an NPN-type transistor operable at high speed is configured and is connected to the input terminal of a preamplifier to which the output of the photodetector is input so that parasitic capacitance caused in the photodetector and due to packaging is equivalently reduced and the fluctuation of parasitic capacitance caused due to manufacturing dispersion is also compensated is provided.
摘要翻译：由于光接收器的光电检测器的阳极端子处的寄生电容引起大的时间常数。因此，其中主要包括以高速工作的NPN型晶体管的可变负电容器的光接收器被配置并连接到前置放大器的输入端子，输入光电检测器的输出端，使得在光电探测器中产生的寄生电容并且由于封装等效地减少，并且还补偿了由于制造分散引起的寄生电容的波动。

10. 发明授权

US5523966A Memory cell and a memory device having reduced soft error 失效
标题翻译：存储单元和具有降低的软错误的存储器件
公开(公告)号：US5523966A
公开(公告)日：1996-06-04
申请号：US530421
申请日：1995-09-18
申请人： Youji Idei , Hiroaki Nambu , Kazuo Kanetani , Toru Masuda , Kunihiko Yamaguchi , Kenichi Ohhata , Takeshi Kusunoki
发明人： Youji Idei , Hiroaki Nambu , Kazuo Kanetani , Toru Masuda , Kunihiko Yamaguchi , Kenichi Ohhata , Takeshi Kusunoki
IPC分类号： G11C11/41 , G11C11/412 , H01L21/8244 , H01L27/11 , G11C11/00
CPC分类号： G11C11/4125 , H01L27/11 , H01L27/1104
摘要： Disclosed is a static type memory cell with high immunity from alpha ray-induced soft errors. The memory cell has a coupling capacitance C.sub.c between two data storage nodes 1 and 2. The p-well (or p-substrate) in which the driver-MOS transistors MN3, MN4 and the transfer MOS transistors MN1, MN2 are formed is connected to a V.sub.bb generator. The voltage V.sub.bb is set lower than the low level V.sub.L of the memory cell signal potential. Even when the potential variation .DELTA.V.sub.L of the low-voltage side node 2 is large, the parasitic diode present between the n-type diffusion layer corresponding to the source or drain of MN1-MN4 and the p-well (or p-substrate) does not turn on. Erroneous operations can therefore be prevented.
摘要翻译：公开了一种具有高抗α射线诱导的软错误免疫力的静态型记忆体。存储单元在两个数据存储节点1和2之间具有耦合电容Cc。其中形成驱动器MOS晶体管MN3，MN4和传输MOS晶体管MN1，MN2的p阱（或p衬底）连接到一个Vbb发生器。电压Vbb被设定为低于存储单元信号电位的低电平VL。即使当低电压侧节点2的电位变化量DELTA VL大时，存在于与MN1-MN4的源极或漏极对应的n型扩散层与p阱（或p-衬底）之间的寄生二极管，不打开因此可以防止错误的操作。

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