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1. 发明授权

US08121579B2 Active mixer circuit and a receiver circuit or a millimeter-wave communication unit using it 有权
标题翻译：有源混频器电路和接收器电路或使用它的毫米波通信单元
公开(公告)号：US08121579B2
公开(公告)日：2012-02-21
申请号：US12370159
申请日：2009-02-12
申请人： Nobuhiro Shiramizu , Toru Masuda , Takahiro Nakamura , Katsuyoshi Washio , Masamichi Tanabe
发明人： Nobuhiro Shiramizu , Toru Masuda , Takahiro Nakamura , Katsuyoshi Washio , Masamichi Tanabe
IPC分类号： H04B1/16 , H04B1/26 , H03D7/16
CPC分类号： H04B1/28 , H03D7/1433 , H03D7/1441 , H03D7/1458 , H03D2200/0023 , H03D2200/0043
摘要： The present invention provides a semiconductor integrated circuit including an active mixer circuit that is operated at low voltage, low noise, and low power consumption. It includes a transconductance amplifier, a transformer, and a multiplier, connects a transformer between the transconductance amplifier and the multiplier, and separates between the transconductance amplifier and the multiplier with respect to direct current inside the transformer. Further, each of the tranconductance amplifier and the multiplier is configured of transistors that are single-stacked between the supply voltage terminal and ground terminal.
摘要翻译：本发明提供一种半导体集成电路，包括以低电压，低噪声和低功耗工作的有源混频器电路。它包括跨导放大器，变压器和乘法器，连接跨导放大器和乘法器之间的变压器，并且相对于变压器内部的直流电流在跨导放大器和乘法器之间分离。此外，跨导放大器和乘法器中的每一个由在电源电压端子和接地端子之间单层堆叠的晶体管构成。

2. 发明申请

US20100271122A1 VARIABLE-GAIN AMPLIFIER CIRCUIT AND WIRELESS COMMUNICATION DEVICE INTEGRATED CIRCUIT EQUIPPED THEREWITH 有权
标题翻译：可变增益放大器电路和无线通信设备集成电路
公开(公告)号：US20100271122A1
公开(公告)日：2010-10-28
申请号：US12765010
申请日：2010-04-22
申请人： Toru MASUDA , Nobuhiro Shiramizu , Takahiro Nakamura , Katsuyoshi Washio
发明人： Toru MASUDA , Nobuhiro Shiramizu , Takahiro Nakamura , Katsuyoshi Washio
IPC分类号： H03G3/20
CPC分类号： H03G3/3052
摘要： There is disclosed a variable-gain amplifier circuit that operates on a low voltage, exhibits low distortion, provides a wide range of variation, and is suitable for use in a low-power-consumption wireless communication system. The variable-gain amplifier circuit is configured so that a variable-load circuit, which includes three reactance function elements and provides a wide range of impedance variation, is connected to a conductor circuit whose output terminal generates a positive-phase output current proportional to conductance with respect to an input voltage.
摘要翻译：公开了一种在低电压下操作的可变增益放大器电路，具有低失真，提供宽范围的变化，并且适用于低功耗无线通信系统。可变增益放大器电路被配置为使得包括三个电抗功能元件并提供宽范围的阻抗变化的可变负载电路连接到其输出端产生与电导成比例的正相输出电流的导体电路相对于输入电压。

3. 发明授权

US07214973B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07214973B2
公开(公告)日：2007-05-08
申请号：US11070229
申请日：2005-03-03
申请人： Makoto Miura , Katsuyoshi Washio , Hiromi Shimamoto
发明人： Makoto Miura , Katsuyoshi Washio , Hiromi Shimamoto
IPC分类号： H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L29/7378 , H01L29/0821 , H01L29/66242
摘要： A bipolar type semiconductor device capable of attaining high current gain and high cut-off frequency and performing a satisfactory transistor operation also in a high current region while maintaining a high breakdown voltage performance, as well as a method of manufacturing the semiconductor device, are provided. In a collector comprising a first semiconductor layer and a second semiconductor layer narrower in band gap than the first semiconductor layer, an impurity is doped so as to have a peak of impurity concentration within the second collector layer and so that the value of the peak is higher than the impurity concentration at any position within the first collector layer. It is preferable to adjust the concentration of the doped impurity in such a manner that a collector-base depletion layer extends up to the first collector layer.
摘要翻译：提供一种能够在保持高的击穿电压性能的同时在高电流区域中获得高电流增益和高截止频率并执行令人满意的晶体管操作的双极型半导体器件，以及制造半导体器件的方法。在包含比第一半导体层窄的带隙的第一半导体层和第二半导体层的集电体中，掺杂杂质以使第二集电极层内的杂质浓度的峰值为峰值，高于第一收集层内任何位置的杂质浓度。优选以使得集电极 - 基极耗尽层向上延伸到第一集电极层的方式调节掺杂杂质的浓度。

4. 发明申请

US20070045664A1 Semiconductor device and manufacturing method of the same 失效
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20070045664A1
公开(公告)日：2007-03-01
申请号：US11485287
申请日：2006-07-13
申请人： Markoto Miura , Katsuyoshi Washio , Hiromi Shimamoto
发明人： Markoto Miura , Katsuyoshi Washio , Hiromi Shimamoto
IPC分类号： H01L31/00
CPC分类号： H01L29/7378 , Y10S438/936
摘要： A semiconductor device capable of avoiding generation of a barrier in a conduction band while maintaining high withstanding voltage and enabling high speed transistor operation at high current in a double hetero bipolar transistor, as well as a manufacturing method thereof, wherein a portion of the base and the collector is formed of a material with a forbidden band width narrower than that of a semiconductor substrate, a region where the forbidden band increases stepwise and continuously from the emitter side to the collector side is disposed in the inside of the base and the forbidden band width at the base-collector interface is designed so as to be larger than the minimum forbidden band width in the base, whereby the forbidden band width at the base layer edge on the collector side can be made closer to the forbidden band width of the semiconductor substrate than usual while sufficiently maintaining the hetero effect near the emitter-base thereby capable of decreasing the height of the energy barrier generated upon increase of the collector current and enabling satisfactory transistor operation at high current.
摘要翻译：一种半导体器件及其制造方法，其能够在保持高耐受电压的同时避免在导带中产生阻挡层并能够在高电流下进行高速晶体管的操作，以及其制造方法，其中，集电体由禁带宽度窄于半导体衬底的材料形成，禁带从发射极侧向集电极侧逐步且连续地增加的区域设置在基体的内部，禁带在基极集电体界面的宽度被设计为大于基极中的最小禁带宽度，由此集电极侧的基底边缘处的禁带宽度可以更接近半导体的禁带宽度衬底，同时充分保持发射极基极附近的杂质效应，从而能够降低高度在集电极电流增加时产生能量势垒，并且能够在高电流下令人满意的晶体管工作。

5. 发明申请

US20060169987A1 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060169987A1
公开(公告)日：2006-08-03
申请号：US11072279
申请日：2005-03-07
申请人： Makoto Miura , Katsuya Oda , Katsuyoshi Washio
发明人： Makoto Miura , Katsuya Oda , Katsuyoshi Washio
IPC分类号： H01L33/00 , H01S5/20
CPC分类号： H01L21/0262 , H01L21/02381 , H01L21/0243 , H01L21/02433 , H01L21/02447 , H01L21/0245 , H01L21/02502 , H01L21/02505 , H01L21/02529 , H01L33/12
摘要： A high quality silicon carbide (SiC) layer being substantially lower in threading dislocation density than a prior layer is formed on silicon (Si) substrate. A semiconductor device is fabricated in such a way that a semiconductor buffer layer containing Si in part and being higher in defect density than a Si substrate is formed on the Si substrate on the upper portion of which are formed a plurality of pairs of facets being mirror-symmetrical to the surface orientation of a semiconductor substrate, further on the top of the layer a SiC layer is sequentially formed.
摘要翻译：在硅（Si）衬底上形成了高于先有层的穿透位错密度较低的高质量碳化硅（SiC）层。以这样的方式制造半导体器件，即在Si衬底上形成有部分地Si密度高于Si衬底的半导体缓冲层，其半导体缓冲层的缺陷密度高于Si衬底，其上部形成有成对的多对面与半导体衬底的表面取向对称，此外在层的顶部依次形成SiC层。

6. 发明授权

US07045412B2 Field-effect type semiconductor device for power amplifier 有权
公开(公告)号：US07045412B2
公开(公告)日：2006-05-16
申请号：US10898257
申请日：2004-07-26
申请人： Nobuyuki Sugii , Masatoshi Morikawa , Isao Yoshida , Katsuyoshi Washio
发明人： Nobuyuki Sugii , Masatoshi Morikawa , Isao Yoshida , Katsuyoshi Washio
IPC分类号： H01L21/8238
CPC分类号： H01L29/66659 , H01L29/1045 , H01L29/1087 , H01L29/165 , H01L29/7835 , H03F3/601 , Y10S438/933
摘要： In a semiconductor multi-layer structure in which a first SiGe layer having a first conductivity-type and high impurity concentration, a second SiGe layer having the first conductivity-type and a low impurity concentration and a Si layer having a low impurity concentration are formed one on another in this order on a Si substrate of the first conductivity-type, a channel is formed in a part of the Si layer and a source electrode passes through the second SiGe layer of low impurity concentration to electrically contact the first SiGe layer of high impurity concentration or the substrate.

7. 发明授权

US06956255B2 Semiconductor device and drive circuit using the semiconductor devices 失效
标题翻译：使用半导体器件的半导体器件和驱动电路
公开(公告)号：US06956255B2
公开(公告)日：2005-10-18
申请号：US10289306
申请日：2002-11-07
申请人： Eiji Oue , Katsuyoshi Washio , Masao Kondo , Hiromi Shimamoto
发明人： Eiji Oue , Katsuyoshi Washio , Masao Kondo , Hiromi Shimamoto
IPC分类号： H01L21/331 , H01L21/76 , H01L21/822 , H01L21/8234 , H01L21/8249 , H01L23/367 , H01L27/04 , H01L27/06 , H01L29/73 , H01L29/732 , H01L29/786 , H01L29/80 , H01L39/112
CPC分类号： H01L29/7322 , H01L21/8249 , H01L23/3677 , H01L29/7317 , H01L2224/82 , H01L2924/1305 , H01L2924/13091 , H01L2924/00
摘要： A high-speed bipolar transistor is provided which is improved in the effect of heat radiation without increasing the substrate capacitance. The heat radiation connection between a base region and a silicon substrate includes a p+ extrinsic base polysilicon electrode and a polysilicon layer buried in an isolation groove with a very thin silicon dioxide side wall. Accordingly, the heat generated at the base is radiated through this path to the silicon substrate. Further, the film thickness of the silicon dioxide on the inner wall of the isolation groove is sufficiently increased compared with previous structures to prevent an increase in the substrate capacitance. Consequently, there can be obtained a bipolar transistor which operates at high speed, and is improved in the effect of heat radiation without increasing the substrate capacitance.
摘要翻译：提供了高速双极晶体管，其在不增加衬底电容的情况下改善了散热的效果。基极区域和硅衬底之间的热辐射连接包括一个非本征基极多晶硅电极和一个埋在具有非常薄的二氧化硅侧壁的隔离槽中的多晶硅层。因此，在基底处产生的热量通过该路径被辐射到硅衬底。此外，与以前的结构相比，隔离槽的内壁上的二氧化硅的膜厚度充分增加，以防止衬底电容的增加。因此，可以获得高速工作的双极晶体管，并且在不增加衬底电容的情况下提高散热的效果。

8. 发明授权

US06936875B2 Insulated-gate field-effect transistor, method of fabricating same, and semiconductor device employing same 有权
标题翻译：绝缘栅场效应晶体管，其制造方法以及采用该绝缘栅场效应晶体管的半导体器件
公开(公告)号：US06936875B2
公开(公告)日：2005-08-30
申请号：US10673789
申请日：2003-09-30
申请人： Nobuyuki Sugii , Kazuhiro Ohnishi , Katsuyoshi Washio
发明人： Nobuyuki Sugii , Kazuhiro Ohnishi , Katsuyoshi Washio
IPC分类号： H01L21/764 , H01L21/02 , H01L21/20 , H01L21/336 , H01L21/762 , H01L21/8234 , H01L27/08 , H01L27/088 , H01L27/12 , H01L29/10 , H01L29/786 , H01L29/80
CPC分类号： H01L29/785 , H01L29/1054 , H01L29/66795 , H01L29/7842 , H01L29/78648 , H01L29/78687 , H01L29/802
摘要： With the invention, it is possible to avoid deterioration in short-channel characteristics, caused by a silicon germanium layer coming into contact with the channel of a strained SOI transistor. Further, it is possible to fabricate a double-gate type of strained SOI transistor or to implement mixedly mounting the strained SOI transistor and a conventional silicon or SOI transistor on the same wafer. According to the invention, for example, a strained silicon layer is grown on a strain-relaxed silicon germanium layer, and subsequently, portions of the silicon germanium layer are removed, thereby constituting a channel layer in the strained silicon layer.
摘要翻译：利用本发明，可以避免由与应变SOI晶体管的沟道接触的硅锗层引起的短沟道特性的劣化。此外，可以制造双栅型应变SOI晶体管，或者在同一晶片上实现将应变SOI晶体管和常规硅或SOI晶体管混合安装。根据本发明，例如，在应变松弛硅锗层上生长应变硅层，随后去除硅锗层的部分，从而在应变硅层中构成沟道层。

9. 发明申请

US20050003573A1 Field-effect type semiconductor device for power amplifier 有权
标题翻译：功率放大器的场效应半导体器件
公开(公告)号：US20050003573A1
公开(公告)日：2005-01-06
申请号：US10898257
申请日：2004-07-26
申请人： Nobuyuki Sugii , Masatoshi Morikawa , Isao Yoshida , Katsuyoshi Washio
发明人： Nobuyuki Sugii , Masatoshi Morikawa , Isao Yoshida , Katsuyoshi Washio
IPC分类号： H01L21/336 , H01L21/8234 , H01L21/8238 , H01L27/088 , H01L27/092 , H01L29/10 , H01L29/165 , H01L29/78 , H03F3/60 , H01L29/06
CPC分类号： H01L29/66659 , H01L29/1045 , H01L29/1087 , H01L29/165 , H01L29/7835 , H03F3/601 , Y10S438/933
摘要： In a semiconductor multi-layer structure in which a first SiGe layer having a first conductivity-type and high impurity concentration, a second SiGe layer having the first conductivity-type and a low impurity concentration and a Si layer having a low impurity concentration are formed one on another in this order on a Si substrate of the first conductivity-type, a channel is formed in a part of the Si layer and a source electrode passes through the second SiGe layer of low impurity concentration to electrically contact the first SiGe layer of high impurity concentration or the substrate.
摘要翻译：在具有第一导电型和高杂质浓度的第一SiGe层的半导体多层结构中，形成具有第一导电型和低杂质浓度的第二SiGe层和具有低杂质浓度的Si层在第一导电类型的Si衬底上依次另一个，在Si层的一部分中形成沟道，并且源极通过低杂质浓度的第二SiGe层，以电接触第一SiGe层的第一SiGe层高杂质浓度或底物。

10. 发明授权

US06658217B2 Optical receiver 失效
公开(公告)号：US06658217B2
公开(公告)日：2003-12-02
申请号：US09946450
申请日：2001-09-06
申请人： Kenichi Ohhata , Ryoji Takeyari , Toru Masuda , Katsuyoshi Washio , Yasushi Hatta
发明人： Kenichi Ohhata , Ryoji Takeyari , Toru Masuda , Katsuyoshi Washio , Yasushi Hatta
IPC分类号： H04B1006
CPC分类号： H04B10/6932 , H04B10/6933 , H04B10/695
摘要： An optical receiver generates a voltage signal having a predetermined swing from a current signal, and feeds the voltage signal to a decision circuit. An optical receiving element receives the input optical signal, converts the optical signal to a current signal, and provides the current signal to a preamplifier, which converts the input current signal into a voltage signal. The voltage signal is input to an amplifier having a limiting function, which linearly amplifies the voltage signal when the swing of the voltage signal is smaller than a predetermined value, and limitedly amplifies the voltage signal when the voltage signal is greater than the predetermined value. An automatic-gain-control amplifier receives the output from the amplifier with the limiting function, and amplifies the input voltage signal to a voltage signal having a constant swing. The decision circuit receives the output of the automatic-gain-control amplifier and decides the binary nature of the voltage, and thus of the input optical signal.

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