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    • 2. 发明申请
    • SEMICONDUCTOR INTEGRATED CIRCUIT WITH VARIABLE GAIN AMPLIFIER
    • 具有可变增益放大器的半导体集成电路
    • US20090102552A1
    • 2009-04-23
    • US12252554
    • 2008-10-16
    • Nobuhiro SHIRAMIZUToru Masuda
    • Nobuhiro SHIRAMIZUToru Masuda
    • H03F3/68
    • H03F3/50H03F1/342H03F3/195H03F2200/135H03F2200/18H03F2200/294H03F2200/451H03F2203/5036H03G1/0023
    • The variable gain amplifier includes a bias circuit (BC) 1, a matching circuit (MC) 2, a variable gain resistive feedback amplifier (FA) 3 and an output follower (EA) 4. The resistance values of the load resistance Rc and feedback resistance Rf are changed in cooperation. In a case of making the load resistance Rc a high resistance to set the low noise amplifier to a high gain, the feedback resistance Rf is also made a high resistance, the feedback time constant τfb(c1)≈2π·RfCbe/(1+gmRc) of the closed loop of the resistive negative feedback amplifier 3 becomes substantially constant, and then the amplifier has a gain small in frequency dependency over a wide bandwidth. In a case of making the load resistance Rc a low resistance to set the low noise amplifier to a low gain, the feedback resistance Rf is also made a low resistance. The feedback resistance Rf with the low resistance increases the negative feedback quantity, and thus the amplifier is set to a low gain. Also, the load resistance Rc is made a low resistance, and the feedback time constant τfb(c1) becomes substantially constant. The gain is not lowered further in a high frequency region.
    • 可变增益放大器包括偏置电路(BC)1,匹配电路(MC)2,可变增益电阻反馈放大器(FA)3和输出跟随器(EA)4.负载电阻Rc和反馈的电阻值 电阻Rf随之改变。 在使负载电阻Rc为高电平的情况下,将低噪声放大器设定为高增益的情况下,反馈电阻Rf也变为高电阻,反馈时间常数τfb(c1)≈2pi.RfCbe/(1+ 电阻性负反馈放大器3的闭环的gmRc变得基本恒定,然后放大器在宽带宽上具有小的频率依赖性的增益。 在将负载电阻Rc设置为低电阻以将低噪声放大器设置为低增益的情况下,反馈电阻Rf也被制成低电阻。 具有低电阻的反馈电阻Rf增加负反馈量,因此放大器被设置为低增益。 此外,使负载电阻Rc为低电阻,反馈时间常数τfb(c1)变得基本恒定。 增益在高频区域不会进一步降低。
    • 3. 发明申请
    • VARIABLE FREQUENCY OSCILLATOR AND COMMUNICATION CIRCUIT WITH IT
    • 可变频率振荡器及其通信电路
    • US20080122546A1
    • 2008-05-29
    • US11771403
    • 2007-06-29
    • Nobuhiro SHIRAMIZUToru Masuda
    • Nobuhiro SHIRAMIZUToru Masuda
    • H03L7/099H03K3/03
    • H03L7/0995H03K3/0322H03K3/35613H03K5/133H03K2005/00208H03K2005/00234H03L1/00H03L7/0891H03L7/18H03M9/00
    • In a variable frequency oscillator in a semiconductor device, as the variation of an oscillation frequency caused by the variation of temperature and supply voltage and process variation is large, it is difficult to reduce the conversion ratio of control voltage dependent upon phase noise and the oscillation frequency and therefore, phase noise is large. The variation of the oscillation frequency is suppressed and phase noise is reduced by connecting a voltage-to-current conversion circuit that converts input control voltage to control current of a ring oscillator to the ring oscillator where delay circuits a delay time of which increases and decreases according to the amplitude of input control current are cascade-connected by a plurality of stages in a ring and increasing/decreasing current dependent upon any of temperature, supply voltage and the threshold voltage of a transistor inside the voltage-to-current conversion circuit.
    • 在半导体器件的可变频率振荡器中,随着由温度和电源电压的变化引起的振荡频率的变化和工艺变化的变化大,难以根据相位噪声和振荡来降低控制电压的转换比 因此,相位噪声较大。 通过连接将输入控制电压转换为环形振荡器的控制电流的电压 - 电流转换电路,振荡频率的变化被抑制,并且相位噪声减小,其中延迟电路的延迟时间增加和减小 根据输入控制电流的幅度通过环中的多个级级联连接,并且取决于电压 - 电流转换电路内的晶体管的温度,电源电压和阈值电压中的任一个的增加/减少电流。