专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090000741A1 Vacuum prcessing apparatus and vacuum processing method of sample 审中-公开
标题翻译：真空加工设备和样品的真空处理方法
公开(公告)号：US20090000741A1
公开(公告)日：2009-01-01
申请号：US12230465
申请日：2008-08-29
申请人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Shigeru Shirayone , Hideki Kihara
发明人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Shigeru Shirayone , Hideki Kihara
IPC分类号： C23F1/08
CPC分类号： H01L21/31116 , C23F4/00 , H01J37/32192 , H01J37/32935 , H01J2237/2001 , H01L21/31144 , H01L21/67109 , H01L21/67248 , H01L21/76802 , H01L21/76807 , H01L21/76831
摘要： A vacuum processing apparatus includes a vacuum container which can be depressurized, a sample holder inside of the vacuum container for mounting a sample to be processed, wherein films laid over a surface of the sample are etched with plasma generated in a space above the sample holder. The apparatus further includes a gas supply channel for feeding a heat conducting gas between a sample mounting surface and the backside of the sample, and a pressure control unit for changing stepwise the pressure of the gas supply channel between the sample mounting surface and the backside of the sample in accordance with the progress of the processing of the films of the sample by the etching.
摘要翻译：真空处理装置包括可以减压的真空容器，用于安装待处理样品的真空容器内部的样品保持器，其中在样品保持器上方的空间中产生的等离子体蚀刻样品表面上的膜。该设备还包括用于在样品安装表面和样品的背面之间供给导热气体的气体供给通道，以及用于逐步改变样品安装表面和背面之间的气体供应通道的压力的压力控制单元样品根据通过蚀刻处理样品膜的进度。

2. 发明授权

US07947189B2 Vacuum processing apparatus and vacuum processing method of sample 失效
标题翻译：真空加工设备和真空加工方法的样品
公开(公告)号：US07947189B2
公开(公告)日：2011-05-24
申请号：US11696922
申请日：2007-04-05
申请人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Shigeru Shirayone , Hideki Kihara
发明人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Shigeru Shirayone , Hideki Kihara
IPC分类号： C03C25/68 , H01L21/461 , C23F1/00
CPC分类号： H01L21/31116 , C23F4/00 , H01J37/32192 , H01J37/32935 , H01J2237/2001 , H01L21/31144 , H01L21/67109 , H01L21/67248 , H01L21/76802 , H01L21/76807 , H01L21/76831
摘要： A vacuum processing method includes mounting a sample to be processed on a sample mounting surface on a sample holder placed in a vacuum container whose inside can be depressurized, feeding a processing gas and electric field to a space above the sample holder inside of the vacuum container to generate plasma, and etching films of a plurality of layers laid over the surface of the sample into a predetermined shape. A heat conducting gas is fed between the sample mounting surface and the backside of the sample, and at the same time, the pressure of the heat conducting gas is changed stepwise in accordance with the progress of the processing of the films of a plurality of layers of the sample.
摘要翻译：一种真空处理方法，其特征在于，将被处理样品安装在放置在能够减压内部的真空容器内的样品架上的样品安装面上，将处理气体和电场供给到真空容器内的样品保持体的上方的空间以产生等离子体，并且将在样品表面上铺设的多层蚀刻成预定形状的膜。在样品安装表面和样品的背面之间供给导热气体，同时根据多层膜的处理进度，导热气体的压力逐步变化的样品。

3. 发明申请

US20070170149A1 Vacuum Processing Apparatus And Vacuum Processing Method Of Sample 失效
标题翻译：真空加工设备及样品真空处理方法
公开(公告)号：US20070170149A1
公开(公告)日：2007-07-26
申请号：US11696922
申请日：2007-04-05
申请人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Shigeru Shirayone , Hideki Kihara
发明人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Shigeru Shirayone , Hideki Kihara
IPC分类号： C03C25/68 , H01L21/461 , C23F1/00
CPC分类号： H01L21/31116 , C23F4/00 , H01J37/32192 , H01J37/32935 , H01J2237/2001 , H01L21/31144 , H01L21/67109 , H01L21/67248 , H01L21/76802 , H01L21/76807 , H01L21/76831
摘要： A vacuum processing method includes mounting a sample to be processed on a sample mounting surface on a sample holder placed in a vacuum container whose inside can be depressurized, feeding a processing gas and electric field to a space above the sample holder inside of the vacuum container to generate plasma, and etching films of a plurality of layers laid over the surface of the sample into a predetermined shape. A heat conducting gas is fed between the sample mounting surface and the backside of the sample, and at the same time, the pressure of the heat conducting gas is changed stepwise in accordance with the progress of the processing of the films of a plurality of layers of the sample.
摘要翻译：一种真空处理方法，其特征在于，将被处理样品安装在放置在能够减压内部的真空容器内的样品架上的样品安装面上，将处理气体和电场供给到真空容器内的样品保持体的上方的空间以产生等离子体，并且将在样品表面上铺设的多层蚀刻成预定形状的膜。在样品安装表面和样品的背面之间供给导热气体，同时根据多层膜的处理进度，导热气体的压力逐步变化的样品。

4. 发明申请

US20060237391A1 Vacuum processing apparatus and vacuum processing method of sample 审中-公开
标题翻译：真空加工设备和真空加工方法的样品
公开(公告)号：US20060237391A1
公开(公告)日：2006-10-26
申请号：US11213736
申请日：2005-08-30
申请人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Shigeru Shirayone , Hideki Kihara
发明人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Shigeru Shirayone , Hideki Kihara
IPC分类号： B44C1/22 , H01L21/306 , H01L21/461 , C23F1/00
CPC分类号： H01L21/31116 , C23F4/00 , H01J37/32192 , H01J37/32935 , H01J2237/2001 , H01L21/31144 , H01L21/67109 , H01L21/67248 , H01L21/76802 , H01L21/76807 , H01L21/76831
摘要： Provided is a vacuum processing apparatus or processing method which, when films of a plurality of layers are etched into a predetermined shape, eliminates a deficiency in shape formed by sample processing, increases the aspect ratio of the processed shape, and provides a more precise shape. The vacuum processing apparatus of the present invention comprises a vacuum container the inside of which can be depressurized and a sample holder located inside of the vacuum container to place thereon a sample to be processed; is used for etching, into a predetermined shape, films of a plurality of layers laid over the sample surface with plasma formed using an electric field and a processing gas fed in a space above the sample holder inside of the vacuum container; and is equipped with a heat conducting gas feed means for feeding a heat conducting gas between a sample mounting surface and the backside of the sample, wherein the apparatus is equipped further with a heat-conducting-gas pressure control function for changing stepwise the pressure of the heat conducting gas fed between the sample mounting surface and the backside of the sample in accordance with the progress of the processing of the films of a plurality of layers of the sample.
摘要翻译：提供一种真空处理装置或处理方法，当多层的膜被蚀刻成预定形状时，消除由样品处理形成的形状不足，增加加工形状的纵横比，并提供更精确的形状。本发明的真空处理装置包括一个其内部可被减压的真空容器和一个位于真空容器内部的样品架，放置在待处理样品上; 用于将采用电场形成的等离子体放置在样品表面上的多层的薄膜和在真空容器内的样品架上方的空间内供给的处理气体进行蚀刻，形成预定的形状; 并且配备有用于在样品安装表面和样品的背面之间供给导热气体的导热气体供给装置，其中该装置还具有用于逐步改变样品的压力的导热气体压力控制功能导热气体根据样品的多个层的膜的处理进程而在样品安装表面和样品的背面之间供给。

5. 发明申请

US20090065145A1 Plasma Processing Apparatus And Method Capable Of Adjusting Temperature Within Sample Table 审中-公开
标题翻译：等离子体处理装置和能够调节样品表内温度的方法
公开(公告)号：US20090065145A1
公开(公告)日：2009-03-12
申请号：US12267813
申请日：2008-11-10
申请人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Kenetsu Yokogawa
发明人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Kenetsu Yokogawa
IPC分类号： C23F1/08
CPC分类号： H01L21/67069 , H01J37/32091 , H01J37/32192 , H01J37/32935 , H01J2237/2001 , H01L21/67109 , H01L21/67248
摘要： A plasma processing apparatus includes a processing chamber disposed within a vacuum vessel for forming therein a plasma, a sample table disposed beneath the processing chamber for mounting on its upper surface a workpiece to be processed, an electrode disposed within the sample table for allowing application of high frequency power for adjustment of a surface potential of the workpiece, a passage disposed within the sample table for causing a refrigerant to flow therein, and a control device for adjusting a temperature of the refrigerant flowing in the passage. The workpiece is processed using a plasma created within the processing chamber under application of the high frequency power. Before application of the high frequency power, the control device starts to adjust the temperature of the refrigerant based on information of the high frequency power so that it has a predetermined value.
摘要翻译：等离子体处理装置包括设置在真空容器内用于在其中形成等离子体的处理室，设置在处理室下方的样品台，用于在其上表面上安装待处理的工件，设置在样品台内的电极，用于调整工件的表面电位的高频电力，设置在样品台内以使制冷剂流动的通道，以及用于调节在通道中流动的制冷剂的温度的控制装置。使用在施加高频功率的处理室内产生的等离子体处理工件。在施加高频电力之前，控制装置基于高频功率的信息开始调节制冷剂的温度，使其具有预定值。

6. 发明申请

US20060283549A1 Plasma processing apparatus and method capable of adjusting temperature within sample table 审中-公开
标题翻译：能够调节样品台内温度的等离子体处理装置和方法
公开(公告)号：US20060283549A1
公开(公告)日：2006-12-21
申请号：US11209743
申请日：2005-08-24
申请人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Kenetsu Yokogawa
发明人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Kenetsu Yokogawa
IPC分类号： G01L21/30 , C23F1/00
CPC分类号： H01L21/67069 , H01J37/32091 , H01J37/32192 , H01J37/32935 , H01J2237/2001 , H01L21/67109 , H01L21/67248
摘要： A plasma processing apparatus includes a processing chamber disposed within a vacuum vessel for forming therein a plasma, a sample table disposed beneath the processing chamber for mounting on its upper surface a workpiece to be processed, an electrode disposed within the sample table for allowing application of high frequency power for adjustment of a surface potential of the workpiece, a passage disposed within the sample table for causing a refrigerant to flow therein, and a control device for adjusting a temperature of the refrigerant flowing in the passage. The workpiece is processed using a plasma created within the processing chamber under application of the high frequency power. Before application of the high frequency power, the control device starts to adjust the temperature of the refrigerant based on information of the high frequency power so that it has a predetermined value.
摘要翻译：等离子体处理装置包括设置在真空容器内用于在其中形成等离子体的处理室，设置在处理室下方的样品台，用于在其上表面上安装待处理的工件，设置在样品台内的电极，用于调整工件的表面电位的高频电力，设置在样品台内以使制冷剂流动的通道，以及用于调节在通道中流动的制冷剂的温度的控制装置。使用在施加高频功率的处理室内产生的等离子体处理工件。在施加高频电力之前，控制装置基于高频功率的信息开始调节制冷剂的温度，使其具有预定值。

7. 发明申请

US20090078563A1 Plasma Processing Apparatus And Method Capable of Adjusting Temperature Within Sample Table 审中-公开
标题翻译：等离子体处理装置和能够调节样品表内温度的方法
公开(公告)号：US20090078563A1
公开(公告)日：2009-03-26
申请号：US12267880
申请日：2008-11-10
申请人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Kenetsu Yokogawa
发明人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Kenetsu Yokogawa
IPC分类号： C23C14/28
CPC分类号： H01L21/67069 , H01J37/32091 , H01J37/32192 , H01J37/32935 , H01J2237/2001 , H01L21/67109 , H01L21/67248
摘要： A plasma processing method includes mounting a workpiece to be processed on an upper surface of a sample table disposed at a lower portion of an interior of a processing chamber disposed within a vacuum vessel and processing the workpiece by use of plasma formed within the processing chamber while applying thereto a first high frequency power for adjustment of a surface potential of the workpiece which is disposed on the sample table. The method further includes starting, prior to application of the first high frequency power, to adjust a temperature of a heat exchange medium flowing in a passage disposed inside of the sample table so as to have a predetermined value based on information of this high frequency power.
摘要翻译：等离子体处理方法包括将待处理的工件安装在设置在设置在真空容器内的处理室的内部的下部的样品台的上表面上，并且通过使用在处理室内形成的等离子体来处理工件，同时向其施加用于调整设置在样品台上的工件的表面电位的第一高频电力。该方法还包括在施加第一高频功率之前，开始在设置在样品台内部的通道中流动的热交换介质的温度，以便基于该高频功率的信息具有预定值。

8. 发明申请

US20080121344A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20080121344A1
公开(公告)日：2008-05-29
申请号：US12023874
申请日：2008-01-31
申请人： Tooru Aramaki , Tsunehiko Tsubone , Ryujiro Udo , Motohiko Yoshigai , Takashi Fujii
发明人： Tooru Aramaki , Tsunehiko Tsubone , Ryujiro Udo , Motohiko Yoshigai , Takashi Fujii
IPC分类号： C23F1/00 , C23C16/513
CPC分类号： C23C16/4581 , C23C16/4586 , C23C16/46 , H01J2237/2001 , H01L21/67109 , H01L21/6719
摘要： A plasma processing method for processing a sample by reducing a pressure within a processing chamber, including mounting the sample on a sample holder disposed in the processing chamber, and processing using a plasma generated in the processing chamber above the sample holder while supplying a gas for heat transfer to a space between a surface of the sample holder having the sample mounted thereon and a rear surface of the sample. The sample holder has a plurality of substantially ring-shaped depressed portions at the surface where the sample is mounted. A pressure in a space between the depressed portions arranged at a central portion of the sample holder with respect to outer circumferential portion and the sample is set to be lower than a pressure in a space between the depressed portions at the outer circumferential portion and the sample.
摘要翻译：一种用于通过减小处理室内的压力来处理样品的等离子体处理方法，包括将样品安装在设置在处理室中的样本保持器上，以及使用在样品架上方的处理室中产生的等离子体进行处理，同时为热传递到安装有样品的样品保持器的表面与样品的后表面之间的空间。样品保持器在样品安装的表面具有多个基本环形的凹陷部分。设置在样品保持架的中心部分相对于外周部分的凹陷部分和样品之间的空间中的压力被设定为低于外周部分的凹陷部分和样品之间的空间中的压力。

9. 发明申请

US20060291132A1 Electrostatic chuck, wafer processing apparatus and plasma processing method 审中-公开
标题翻译：静电卡盘，晶片加工装置和等离子体处理方法
公开(公告)号：US20060291132A1
公开(公告)日：2006-12-28
申请号：US11370102
申请日：2006-03-08
申请人： Seiichiro Kanno , Tsunehiko Tsubone , Masakazu Isozaki , Toshio Masuda , Go Miya , Hiroho Kitada , Tooru Aramaki
发明人： Seiichiro Kanno , Tsunehiko Tsubone , Masakazu Isozaki , Toshio Masuda , Go Miya , Hiroho Kitada , Tooru Aramaki
IPC分类号： H01T23/00
CPC分类号： H01L21/67109 , H01L21/67103 , H01L21/6831
摘要： An electrostatic chuck which is built in a heater and can change, at a high speed, the temperature distribution of a wafer being processed by a plasma is provided at low cost. Also, there is provided a processing method which realizes uniform etching by suppressing CD variations in the plane of the wafer even when etching conditions change. The electrostatic chuck includes a base material in which multiple coolant grooves are formed, a high resistance layer which is formed on the base material, multiple heaters which are formed by thermally spraying conductors within the high resistance layer, multiple electrostatic chuck electrodes which are formed similarly by thermally spraying conductors within the high resistance layer, and temperature measuring means, and adjusts outputs of the heaters on the basis of temperature information of the temperature measuring means.
摘要翻译：以低成本提供内置在加热器中并能够以高速度改变由等离子体处理的晶片的温度分布的静电卡盘。此外，提供了一种通过抑制晶片的平面中的CD变化即使在蚀刻条件改变时实现均匀蚀刻的处理方法。静电卡盘包括形成有多个冷却剂槽的基材，形成在基材上的高电阻层，通过热喷涂高电阻层内的导体形成的多个加热器，形成类似的多个静电卡盘电极通过热电喷涂高电阻层内的导体和温度测量装置，并且基于温度测量装置的温度信息来调节加热器的输出。

10. 发明授权

US07303998B2 Plasma processing method 失效
标题翻译：等离子体处理方法
公开(公告)号：US07303998B2
公开(公告)日：2007-12-04
申请号：US11002265
申请日：2004-12-03
申请人： Tooru Aramaki , Tsunehiko Tsubone , Ryujiro Udo , Motohiko Yoshigai , Takashi Fujii
发明人： Tooru Aramaki , Tsunehiko Tsubone , Ryujiro Udo , Motohiko Yoshigai , Takashi Fujii
IPC分类号： H01L21/302
CPC分类号： C23C16/4581 , C23C16/4586 , C23C16/46 , H01J2237/2001 , H01L21/67109 , H01L21/6719
摘要： A plasma processing method for processing a sample by reducing a pressure within a processing chamber, including mounting the sample on a sample holder disposed in the processing chamber, and processing using a plasma generated in the processing chamber above the sample holder while supplying a gas for heat transfer to a space between a surface of the sample holder having the sample mounted thereon and a rear surface of the sample. The sample holder has a plurality of substantially ring-shaped depressed portions at the surface where the sample is mounted. A pressure in a space between the depressed portions arranged at a central portion of the sample holder with respect to outer circumferential portion and the sample is set to be lower than a pressure in a space between the depressed portions at the outer circumferential portion and the sample.
摘要翻译：一种用于通过减小处理室内的压力来处理样品的等离子体处理方法，包括将样品安装在设置在处理室中的样本保持器上，以及使用在样品架上方的处理室中产生的等离子体进行处理，同时为热传递到安装有样品的样品保持器的表面与样品的后表面之间的空间。样品保持器在样品安装的表面具有多个基本环形的凹陷部分。设置在样品保持架的中心部分相对于外周部分的凹陷部分和样品之间的空间中的压力被设定为低于外周部分的凹陷部分和样品之间的空间中的压力。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式