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1. 发明专利

JP2011238967A Liquid processing apparatus 有权
标题翻译：液体加工设备
公开(公告)号：JP2011238967A
公开(公告)日：2011-11-24
申请号：JP2011173580
申请日：2011-08-09
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： AKUMOTO MASAMI , TOSHIMA TAKAYUKI , KANEKO SATOSHI , MATSUMOTO KAZUHISA , ITO NORIHIRO , NANBA HIROMITSU
IPC分类号： H01L21/304 , B08B3/02 , H01L21/027 , H01L21/306
CPC分类号： H01L21/67051 , H01L21/6715 , H01L21/68728
摘要： PROBLEM TO BE SOLVED: To provide a liquid processing apparatus which can make a footprint small and does not require provision of a special mechanism for separating exhaust and drainage.SOLUTION: An exhaust/drainage section 6 includes an annular drainage cup 41 configured to mainly take in and drain the process liquid shaken off from a wafer W, and an exhaust cup 42 provided so as to surround the outside of the drainage cup 41 and configured to mainly take in and exhaust gas components from inside and around a rotary cup 3. The rotary cup 3 includes an annular canopy member 32. The drainage cup 41 takes in the process liquid which has been shaken off from the wafer W through discharge holes 33 and 34 formed in the rotary cup 3 at a lower side of the canopy member 32, and drains the process liquid from a drainage port 43. The exhaust cup 42 takes in the gas components around the rotary cup 3 through an introduction port 42b formed in the exhaust cup 42 at an upper side of the canopy member 32, and exhausts the gas components from an exhaust port 45. Liquid-draining from the drainage cup 41 and gas-exhausting from the exhaust cup 42 are performed independently of each other.
摘要翻译：要解决的问题：提供一种液体处理设备，其可以使足迹小，并且不需要设置用于分离排气和排水的特殊机构。解决方案：排气/排水部分6包括环形排水杯41，其构造成主要从晶片W中取出和排出处理液体;以及排气杯42，其设置成围绕排水杯的外部并且构造成主要从旋转杯3的内部和周围吸入和排出气体组分。旋转杯3包括环形冠层构件32.排水杯41吸收已经从晶片W摆脱的处理液体，通过在顶盖32的下侧形成在旋转杯3中的排出孔33和34，并从排水口43排出处理液。排气杯42通过导入口 42b在顶盖32的上侧形成在排气杯42中，并从排气口45排出气体成分。从排水杯41排出液体并排出排气杯42的气体排出独立于eac h其他。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2011199299A Coating/developing system 有权
标题翻译：涂料/开发体系
公开(公告)号：JP2011199299A
公开(公告)日：2011-10-06
申请号：JP2011103236
申请日：2011-05-02
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： AKUMOTO MASAMI , HAYASHI SHINICHI , HAYASHIDA YASUSHI , MATSUOKA NOBUAKI , KIMURA YOSHIO , UEDA KAZUNARI , ITO AKIRA
IPC分类号： H01L21/027 , H01L21/677
CPC分类号： H01L21/67184 , H01L21/67173 , H01L21/67178
摘要： PROBLEM TO BE SOLVED: To reduce the depth dimension of a coating/developing system that forms a resist film on a substrate and performs a developing process to the substrate subjected to light exposure.SOLUTION: A plurality of coating process unit blocks each containing a plurality of coating process units for forming a coating film on a substrate are stacked in a layered form, and a plurality of developing process unit blocks each containing a plurality of developing units are stacked on the coating process unit blocks. Liquid process units in respective coating process unit blocks and liquid process units in respective developing process unit blocks are so arranged as to construct a layered form. Likewise, heating process units in respective coating process unit blocks and heating process units in respective developing process unit blocks are so arranged as to construct a layered form. The layered form structure of the liquid process units and the layered form structure of the heating process units are so arranged as to face each other via a straight-line-shaped substrate transfer path.
摘要翻译：要解决的问题：减少在基板上形成抗蚀剂膜的涂覆/显影系统的深度尺寸，并对经过曝光的基板进行显影处理。解决方案：多个涂覆处理单元块，每个包含多个用于在基板上形成涂膜的涂布处理单元以层叠形式堆叠，并且在涂布处理单元块上堆叠多个包含多个显影单元的显影处理单元块。相应的显影处理单元块中相应涂布处理单元块和液体处理单元中的液体处理单元布置成构成分层形式。同样，相应的显影处理单元块中的各涂布处理单元块和加热处理单元中的加热处理单元被布置成构成分层形式。液体处理单元的层状结构和加热处理单元的分层结构被布置为经由直线状的基板传送路径彼此面对。

3. 发明专利

JP2011187975A Coating and developing system 有权
标题翻译：涂料与开发体系
公开(公告)号：JP2011187975A
公开(公告)日：2011-09-22
申请号：JP2011103228
申请日：2011-05-02
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： AKUMOTO MASAMI , HAYASHI SHINICHI , HAYASHIDA YASUSHI , MATSUOKA NOBUAKI , KIMURA YOSHIO , UEDA KAZUNARI , ITO AKIRA
IPC分类号： H01L21/027 , H01L21/677
CPC分类号： H01L21/67184 , H01L21/67173 , H01L21/67178
摘要： PROBLEM TO BE SOLVED: To reduce the depth dimension of a device in a coating and developing system for performing a process to form an antireflection film on a substrate, a process to form a resist film thereon, and a process to carry out developing on a substrate after exposure. SOLUTION: A COT layer B4 for forming the resist film on the substrate, a BCT layer B5 for forming the antireflection film underlying the resist film, a TCT layer B3 for forming the antireflection film overlying the resist film, and DEV layers B1 and B2 for carrying out developing processing are mutually laminated. A delivery stage group laminated with delivery stages corresponding to each layer is provided in the front and rear of these laminates. Thus, the substrate can be delivered between respective layers via the delivery stage. Further, a protective film formation unit for forming a protective film to immersion exposure on the surface of the substrate is provided on any of the COT layer B4, the BCT layer B5 and TCT layer B3. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题为了减少用于进行在基板上形成抗反射膜的工艺的涂布和显影系统中的装置的深度尺寸，在其上形成抗蚀剂膜的工艺以及执行方法曝光后在底物上显影。解决方案：用于在基板上形成抗蚀剂膜的COT层B4，用于在抗蚀剂膜下形成抗反射膜的BCT层B5，用于形成覆盖抗蚀剂膜的抗反射膜的TCT层B3和DEV层B1 和B2进行显影处理相互层叠。在这些层叠体的前后设置有与各层对应的输送台层叠的输送阶段组。因此，可以经由输送阶段将基板输送到相应的层之间。此外，在COT层B4，BCT层B5和TCT层B3中的任一个上设置用于在基板表面上形成浸渍曝光的保护膜的保护膜形成单元。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2010041059A Coating and developing apparatus 审中-公开
标题翻译：涂料和开发设备
公开(公告)号：JP2010041059A
公开(公告)日：2010-02-18
申请号：JP2009211791
申请日：2009-09-14
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： AKUMOTO MASAMI , HAYASHI SHINICHI , HAYASHIDA YASUSHI , MATSUOKA NOBUAKI , KIMURA YOSHIO , UEDA KAZUNARI , ITO AKIRA
IPC分类号： H01L21/677 , B65G49/06 , B65G49/07 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To achieve high carrying efficiency and high throughput in a coating and developing apparatus that performs a developing process on an exposed substrate after forming a coating layer including a resist layer on the substrate.
SOLUTION: A carrier block S1, a processing block S2 and an interface are disposed in a single line. In the processing block S2, two unit blocks are aligned in the front-back direction. The unit block includes a wafer transfer path that extends horizontally and linearly from the carrier block S1 towards the interface block S3, a coating processing unit that applies a coating solution on a substrate before exposure, and a heat processing unit that performs heat processing on the substrate. Rows of the two unit blocks are stacked vertically. The front unit block and the back unit block in the row of unit blocks in each layer are successively processed. The transfer of substrates between both unit blocks is performed via an intermediate stage.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了在形成包括在基板上的抗蚀剂层的涂层之后在暴露的基板上进行显影处理的涂覆和显影装置中实现高承载效率和高生产率。解决方案：载体块S1，处理块S2和接口设置在一条线上。在处理块S2中，两个单位块在前后方向上排列。单元块包括从载体块S1朝向界面块S3水平且线性延伸的晶片传送路径，在曝光之前将涂布溶液涂布在基板上的涂布处理单元，以及对该基板进行热处理的热处理单元基质。两个单元块的行垂直堆叠。连续处理每层中单元块行中的前单元块和后单元块。在两个单元块之间的衬底的转移通过中间阶段进行。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2009278138A Coating and developing apparatus, and method therefor 有权
标题翻译：涂料和开发设备及其方法
公开(公告)号：JP2009278138A
公开(公告)日：2009-11-26
申请号：JP2009193367
申请日：2009-08-24
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： AKUMOTO MASAMI , HAYASHI SHINICHI , HAYASHIDA YASUSHI , MATSUOKA NOBUAKI , KIMURA YOSHIO , UEDA KAZUNARI , ITO AKIRA
IPC分类号： H01L21/027 , H01L21/677
摘要： PROBLEM TO BE SOLVED: To suppress throughput deterioration when trouble occurs in a processing unit for performing development processing or a conveying mechanism, in an apparatus which carries out resist film formation on a substrate and development of the substrate subjected to exposure. SOLUTION: Three-layer unit blocks B3 to B5 for forming a coating film and two-layer unit blocks B1, B2 for development processing are mutually laminated on a treatment block S2. Each of the unit blocks B1, B2 for development processing is provided with a developing liquid processing unit, a heating unit, a cooling unit and a main arm A1 or the like which moves along a conveying area extending horizontally and linearly from a carrier block side toward an interface block side. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了在用于进行显影处理的处理单元或输送机构中发生故障时抑制生产率恶化，在基板上进行抗蚀剂膜形成的设备和经受曝光的基板的显影。解决方案：用于形成涂膜的三层单元块B3至B5和用于显影处理的两层单元块B1，B2彼此层压在处理块S2上。用于显影处理的单元块B1，B2设置有沿着从承载块侧水平和线性延伸的输送区域移动的显影液处理单元，加热单元，冷却单元和主臂A1等朝向接口块侧。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2008300452A Substrate-treating device and substrate treatment method 有权
标题翻译：基板处理装置和基板处理方法
公开(公告)号：JP2008300452A
公开(公告)日：2008-12-11
申请号：JP2007142589
申请日：2007-05-29
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： AMANO YOSHIFUMI , TOJIMA JIRO , KANEKO SATOSHI , AKUMOTO MASAMI , TOSHIMA TAKAYUKI
IPC分类号： H01L21/306 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To properly treat a prescribed range of the periphery of a substrate with precision.
SOLUTION: A substrate-treating device 1 for performing treatment, such as, etching and cleaning with respect to the periphery of a substrate (wafer W) comprises a periphery-treating device 4 for treating the periphery of the substrate W, and a substrate holding device 3 for holding the substrate W rotating relative to the periphery-treating device 4. The periphery-treating device 4 comprises a treatment liquid supply section 9 for supplying a treatment liquid to the periphery of the substrate W; and a gas-jetting section 10 for jetting a gas towards the substrate W. The gas-jetting section 10 is provided adjacent, inside the periphery of the substrate W as compared with the treatment liquid supply section 9. Then, the substrate W is rotated relative to the periphery-treating device 4, the treatment liquid is supplied from the treatment liquid supply section 9 to the periphery of the substrate W, and a gas is jetted toward the substrate W from the gas-jetting section 10 provided adjacent in the inside of the substrate W, as compared with the treatment liquid supply section 9, thus treating the periphery of the substrate W.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：精确地适当地处理基板周边的规定范围。解决方案：用于进行相对于基板（晶片W）的周边的蚀刻和清洁的处理的基板处理装置1包括用于处理基板W的周边的周边处理装置4，以及用于保持相对于周边处理装置4旋转的基板W的基板保持装置3.周边处理装置4包括：处理液供给部9，其将处理液供给到基板W的周围; 以及用于向基板W喷射气体的气体喷射部10.与处理液供给部9相比，气体喷射部10与基板W的周围相邻设置。然后，基板W旋转相对于周边处理装置4，将处理液从处理液供给部9供给到基板W的周围，从设置在内侧的气体喷射部10朝向基板W喷射气体与处理液供给部9相比，由此处理基板W的周边。（C）2009，JPO＆INPIT

7. 发明专利

JP2007194508A Substrate transport device, substrate transport method, and computer program 审中-公开
标题翻译：基板运输装置，基板运输方法和计算机程序
公开(公告)号：JP2007194508A
公开(公告)日：2007-08-02
申请号：JP2006013141
申请日：2006-01-20
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： AKUMOTO MASAMI , IIDA NARIAKI
IPC分类号： H01L21/677 , B65G49/07 , B65G51/03
摘要： PROBLEM TO BE SOLVED: To provide a gas-floatation substrate transport device capable of stably transporting a substrate. SOLUTION: The substrate transport device is configured so as to provide a transport path formation member that is extended in the transport direction of the substrate, and has a transport surface becoming lower as it becomes closer to the central section, and the heights of both ends are the same as that of the floated substrate or are higher than that of the substrate as viewed in cross-section; and a group of gas delivering holes that are provided along the transport direction of the substrate on the transport surface of the substrate, and deliver the gas upwardly to float the substrate. The gas delivered onto the transport surface to float the substrate is stored on the transport surface, forms a gas layer so as to enclose the transported substrate, and the substrate is transported at the central section of the transport path while the substrate is receiving the pressure of the stored gas from the right/left hands, thereby suppressing the right/left off-positioning of the substrate, thus enabling the system to stably transport the substrate. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供能够稳定地输送基板的气浮基板输送装置。解决方案：基板输送装置构造成提供沿基板的输送方向延伸的输送路径形成部件，并且随着其越接近中心部分，输送面越低，高度越高的两端与浮动基板相同或高于基板的横截面; 以及一组气体输送孔，其沿着基板的输送方向设置在基板的输送表面上，并向上输送气体以使基板浮起。输送到输送面上以使基板漂浮的气体被储存在输送表面上，形成气体层以封闭输送的基板，并且基板在输送路径的中心部分被输送，同时基板承受压力的左/右手的储存气体，从而抑制基板的右/右偏离，从而使系统能够稳定地输送基板。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2007184429A Heating device and heating method 有权
标题翻译：加热装置和加热方法
公开(公告)号：JP2007184429A
公开(公告)日：2007-07-19
申请号：JP2006001873
申请日：2006-01-06
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： AKUMOTO MASAMI , HAYASHI SHINICHI , IIDA NARIAKI , INATOMI HIROAKI
IPC分类号： H01L21/027
CPC分类号： F27B17/0025 , F27B5/04 , F27D5/0037 , F27D15/02 , H01L21/67109 , H01L21/67748 , H01L21/67784 , Y10S414/139
摘要： PROBLEM TO BE SOLVED: To move the substrate between the cooling plate and the heating plate, and to contrive thinning of a heating device, by levitating a substrate from a cooling plate and a heating plate by gas and moving the substrate into horizonal direction, in the heating device equipped with the cooling plate and the heating plate. SOLUTION: In the heating device 2, discharging holes 3a, 6a are formed for discharging gas to levitate the substrate obliquely upward toward the cooling plate 3 side of a wafer W moving passage, on the cooling plate 3 and the heating plate 6 along the moving passage of the wafer W. The rear side of the wafer W is pushed upon moving the wafer W by a pushing member 51 against a pushing force of the wafer W, by discharging gas from the discharging holes 3a, 6a to move the wafer W to the side of the heating plate 6, on the side opposite to the discharge direction of the gas. Furthermore, the pushing member 51 is moved to the side of the cooling plate 3 in the same direction as the gas discharge direction, under the conditions that the pushing member 51 is pushed by the front side of the wafer W upon moving the wafer W by the discharge of gas from the discharging holes 3a, 6a. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了在冷却板和加热板之间移动基板，并且通过气体将冷却板和加热板悬浮在基板上，并使基板移动到水平面上，从而使加热装置变薄方向，在装有冷却板和加热板的加热装置中。解决方案：在加热装置2中，形成用于排出气体的排出孔3a，6a，以使冷却板3和加热板6向晶片W移动通道的冷却板3侧倾斜向上倾斜基板沿着晶片W的移动通道移动晶片W的后侧，通过抵抗晶片W的推力使推动构件51移动晶片W，通过从排出孔3a，6a排出气体来移动晶片W在加热板6的与气体的排出方向相反的一侧。此外，在将晶片W移动的状态下，推动构件51沿着与气体排出方向相同的方向移动到冷却板3侧，从排出孔3a，6a排出气体。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2007067178A Heating apparatus, coating apparatus, and developing apparatus 有权
标题翻译：加热装置，涂装装置和开发装置
公开(公告)号：JP2007067178A
公开(公告)日：2007-03-15
申请号：JP2005251389
申请日：2005-08-31
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： FUKUOKA TETSUO , AKUMOTO MASAMI , KITANO TAKAHIRO , KIMURA YOSHIO , HAYASHI SHINICHI , ITO AKIRA
IPC分类号： H01L21/027
CPC分类号： C30B33/02 , C30B35/00 , H01L21/67098 , H01L21/67748
摘要： PROBLEM TO BE SOLVED: To provide devices which so cut down the overhead time of a heating apparatus as to improve its throughput, and reduce the sticking amount of particles to a substrate, in the heating apparatus having hot plates and a cooling plate. SOLUTION: The heating apparatus 2 has a flat heating chamber 4 provided in a housing and for heating a wafer W of a substrate on whose one side an opening is provided for carrying the wafer W thereinto/therefrom, hot plates 44, 45 so provided in the heating chamber 4 as to heat the wafer W from its upside and downside, a cooling plate 3 so provided as to adjoin to the side of the opening of the heating chamber 4 for cooling the wafer W heated by the hot plates 44, 45, and a carrying means provided in the housing for so carrying the wafer W between the upside position of the cooling plate 3 and the inside of the heating chamber 4 as to perform the heat treatment of the substrate in the heating chamber 4 in the state of holding the wafer W. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：在具有加热板和冷却板的加热装置中，提供一种能够降低加热装置的开销时间以提高其生产量并减少颗粒到基板的粘附量的装置。解决方案：加热装置2具有设置在壳体中的平坦加热室4，用于加热其一侧设置有用于承载晶片W的开口的基板的晶片W，热板44,45 设置在加热室4中以从上下侧加热晶片W;冷却板3，设置成与加热室4的开口侧邻接，用于冷却由热板44加热的晶片W 45，以及设置在壳体中用于将晶片W承载在冷却板3的上侧位置和加热室4的内部之间的承载装置，以便在加热室4中对基板进行热处理持有晶圆的状态。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2007042860A Developing device and developing method 有权
标题翻译：开发设备和开发方法
公开(公告)号：JP2007042860A
公开(公告)日：2007-02-15
申请号：JP2005225249
申请日：2005-08-03
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KITANO TAKAHIRO , AKUMOTO MASAMI , NISHIKIDO SHUICHI , KUMAGAI MASARU
IPC分类号： H01L21/027
摘要： PROBLEM TO BE SOLVED: To prevent the occurrence of particles in a developing device which does not make a wafer rotate.
SOLUTION: The developing device for substrates has a delivery unit 11 and a developing unit 12 formed in parallel in a process chamber 10, a transporting mechanism 13 for transporting a wafer W between the delivery unit 11 and the developing unit 12 in the condition that both outer sides of the wafer W are gripped from both sides, and a developer supply nozzle 50 and an air blowing nozzle 51 provided above the wafer transport path of the transporting mechanism 13 between the delivery unit 11 and the developing unit 12. The developing unit 12 includes a cleaning liquid supply nozzle 80 formed approximately in U shape, with the upper and lower surface of the wafer W held in-between. The nozzle 80 moves along the wafer W with discharging the cleaning liquid to supply the cleaning liquid to the both sides of the wafer W.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了防止不使晶片旋转的显影装置中的颗粒的出现。解决方案：用于基板的显影装置具有在处理室10中平行形成的输送单元11和显影单元12，用于在输送单元11和显影单元12之间输送晶片W的输送机构13 条件是从两侧夹紧晶片W的两个外侧，以及在输送单元11和显影单元12之间设置在输送机构13的晶片输送路径上方的显影剂供给喷嘴50和送风喷嘴51。显影单元12包括形成为大致U形的清洁液供给喷嘴80，其中晶片W的上表面和下表面保持在其间。喷嘴80沿着晶片W移动，同时排出清洁液体以将清洁液体供应到晶片W的两侧。版权所有（C）2007，JPO＆INPIT

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