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1. 发明专利

JP2012244130A Liquid processing apparatus and washing method of the same 有权
标题翻译：液体加工装置及其洗涤方法
公开(公告)号：JP2012244130A
公开(公告)日：2012-12-10
申请号：JP2011116217
申请日：2011-05-24
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KANEKO SATOSHI
IPC分类号： H01L21/304 , H01L21/027 , H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide a liquid processing apparatus capable of washing deposit inside a processing chamber and a washing method of the liquid processing apparatus.SOLUTION: In a liquid processing apparatus 1 for processing a wafer W with liquid comprises: a wafer support member 10 capable of horizontally supporting and rotating the wafer W; a cover 20 for covering the upper part of the wafer support member 10 and forming a processing chamber S for liquid-processing the wafer W together with the wafer support member 10; an elevating/lowering mechanism 132 for elevating and lowering the cover 20 between an opening position for opening an outer peripheral part 23 of the cover 20 and an outer peripheral part 13 of the wafer support member 10 and a closing position for closing them; a liquid supply member 30(40) disposed inside the processing chamber S, for supplying processing liquid to the rotated wafer W; and a controller 70 for setting the position of the cover 20 to the closing position in the state of not supporting the wafer W by the wafer support member 10, supplying a prescribed amount of washing liquid inside the processing chamber S by the liquid supply member 30(40), and then changing the position of the cover 20 to the opening position.
摘要翻译：解决的问题：提供一种能够洗涤处理室内的沉积物和液体处理设备的洗涤方法的液体处理设备。解决方案：用于用液体处理晶片W的液体处理设备1包括：晶片支撑构件10，其能够水平地支撑和旋转晶片W; 用于覆盖晶片支撑构件10的上部并形成用于与晶片支撑构件10一起对晶片W进行液体处理的处理室S的盖20; 用于在用于打开盖20的外周部分23的打开位置和晶片支撑构件10的外周部分13的打开位置和用于关闭它们的关闭位置之间升高和降低盖子20的升降机构132; 设置在处理室S内部的液体供应构件30（40），用于向旋转的晶片W供应处理液体; 以及控制器70，用于通过晶片支撑构件10在不支撑晶片W的状态下将盖20的位置设定到关闭位置，通过液体供应构件30在处理室S内供应规定量的洗涤液（40），然后将盖20的位置改变到打开位置。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2012169504A Liquid processing apparatus and liquid processing method 有权
标题翻译：液体加工设备和液体加工方法
公开(公告)号：JP2012169504A
公开(公告)日：2012-09-06
申请号：JP2011030265
申请日：2011-02-15
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KANEKO SATOSHI
IPC分类号： H01L21/304 , H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide a liquid processing apparatus and a liquid processing method which enable efficient liquid processing to be performed on a surface of a substrate while holding the substrate securely.SOLUTION: A disclosed liquid processing apparatus includes: a substrate support member supporting a substrate from a rear surface thereof; a rotation mechanism rotating the substrate support member; a process liquid supply part supplying a process liquid to the substrate supported by the substrate support member; and a gas blowout part which blows out a gas to the substrate supported by the substrate support member to press the substrate against the substrate support member, and is disposed on the upstream side of the process liquid supply part in the rotation direction of the substrate rotated by the rotation mechanism through the substrate support member.
摘要翻译：要解决的问题：提供一种液体处理装置和液体处理方法，其能够在保持基板的同时牢固地在基板的表面上进行有效的液体处理。解决方案：所公开的液体处理装置包括：从其背面支撑基板的基板支撑部件; 使所述基板支撑部件旋转的旋转机构; 将处理液供给到由所述基板支撑部件支撑的基板的工艺液供给部; 以及气体吹出部，其向由所述基板支撑部件支撑的基板吹出气体，以将所述基板压靠在所述基板支撑部件上，并且在所述基板旋转方向上设置在所述工艺液供给部的上游侧通过旋转机构穿过衬底支撑构件。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2012151439A Liquid processing apparatus and liquid processing method 有权
标题翻译：液体加工设备和液体加工方法
公开(公告)号：JP2012151439A
公开(公告)日：2012-08-09
申请号：JP2011240325
申请日：2011-11-01
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TOJIMA JIRO , OGATA NOBUHIRO , KANEKO SATOSHI , NAGAMINE SHUICHI , KAI YOSHIHIRO
IPC分类号： H01L21/304 , B05C11/08 , B05D1/40 , H01L21/306
CPC分类号： H01L21/6708 , H01L21/67051 , H01L21/68728
摘要： PROBLEM TO BE SOLVED: To provide a liquid processing apparatus which can clean the lower surface of a substrate efficiently.SOLUTION: A substrate cleaning apparatus (10) is provided with a nozzle (60) located below the lower surface of a substrate (W) held by a substrate holding mechanism and ejecting process liquid to the lower surface of the substrate. The nozzle has a plurality of first ejection ports (61) arranged between a position facing the center part of the substrate and a position facing the peripheral part of the substrate. The first ejection ports are formed so that the eject direction of process liquid being ejected toward the lower surface of the substrate has a component in the rotational direction of the substrate.
摘要翻译：要解决的问题：提供一种能够有效地清洁基板的下表面的液体处理装置。解决方案：基板清洗装置（10）设置有位于由基板保持机构保持的基板（W）的下表面下方的喷嘴（60），并将处理液喷射到基板的下表面。喷嘴具有多个第一喷射口（61），其布置在面向基板的中心部分的位置和面向基板的周边部分的位置之间。第一喷射口形成为使得朝向基板的下表面喷射的处理液的排出方向在基板的旋转方向上具有分量。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2012015180A Two-fluid nozzle, substrate processing apparatus, method of generating liquid droplet, and substrate processing method 审中-公开
标题翻译：双流体喷嘴，基板处理装置，液滴喷射法的生成方法以及基板处理方法
公开(公告)号：JP2012015180A
公开(公告)日：2012-01-19
申请号：JP2010147848
申请日：2010-06-29
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KANEKO SATOSHI , KAI YOSHIHIRO
IPC分类号： H01L21/304 , B05B7/06 , B05B7/10
摘要： PROBLEM TO BE SOLVED: To provide a two-fluid nozzle which can widen the spray range of liquid droplets sprayed to a substrate, and to provide a substrate processing apparatus, a method of generating liquid droplets, and a substrate processing method.SOLUTION: A swirling flow of liquid droplet generation gas discharged downward from a gas discharge opening 46b, and liquid discharged downward from a liquid discharge opening 44b are mixed below the body 42 of a two-fluid nozzle 40 thus generating liquid droplets. Furthermore, a pressure adjustment section which adjusts pressure on the inside of the swirling flow of liquid droplet generation gas discharged downward from the gas discharge opening 46b is provided in the body 42.
摘要翻译：要解决的问题：提供一种可以扩大喷射到基板上的液滴的喷射范围的双流体喷嘴，以及提供基板处理装置，产生液滴的方法和基板处理方法。解决方案：从气体排出口46b向下排出的液滴产生气体的旋流和从液体排出口44b向下排出的液体在双流体喷嘴40的主体42的下方混合，从而产生液滴。此外，在本体42中设置有调节从气体排出口46b向下排出的液滴产生气体的回旋流内侧的压力的压力调节部。（C）2012，JPO＆INPIT

5. 发明专利

JP2009295805A Liquid treatment apparatus and liquid treatment method 有权
标题翻译：液体处理装置和液体处理方法
公开(公告)号：JP2009295805A
公开(公告)日：2009-12-17
申请号：JP2008148175
申请日：2008-06-05
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： AMANO YOSHIFUMI , KANEKO SATOSHI
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To easily control the atmosphere in a treatment space at the periphery of an object to be treated, to reduce size in a horizontal direction, and to reduce the treatment space for treating a wafer.
SOLUTION: A liquid treatment apparatus includes: a second casing 20; a first casing 10 capable of abutting on the second one 20; a holding section 1 for holding the object W; a rotation drive section 60 for rotating the object W held by the holding section 1; surface-side treatment liquid supply nozzles 51a, 52a for supplying a treatment liquid to the periphery of the surface of the object W held by the holding section 1; and a storage section 23 that is disposed at the rear side of the object W held by the holding section 1 and stores the treatment liquid that has been used for the object W. Each of the first and second casings 10, 20 can be moved in one direction, and the first casing 10 can abut on and separate from the second one 20.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了容易地控制待处理物体周围的处理空间中的气氛，以减小水平方向的尺寸，并减少处理晶片的处理空间。解决方案：液体处理设备包括：第二壳体20; 能够邻接第二壳体20的第一壳体10; 用于保持物体W的保持部1; 用于旋转由保持部1保持的物体W的旋转驱动部60; 用于将处理液体供给到由保持部1保持的被检体W的表面的周边的表面侧处理用液体供给喷嘴51a，52a; 以及存储部23，其设置在由保持部1保持的被检体W的后侧，并且存储已经用于物体W的处理液。第一和第二壳体10,20中的每一个可以移动一个方向，并且第一壳体10可以与第二壳体10邻接并分离。20.版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2009158703A Two-fluid nozzle, substrate cleaning apparatus, and substrate cleaning method 有权
标题翻译：双流体喷嘴，基板清洗装置和基板清洗方法
公开(公告)号：JP2009158703A
公开(公告)日：2009-07-16
申请号：JP2007334492
申请日：2007-12-26
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KANEKO SATOSHI
IPC分类号： H01L21/304 , B05B7/04
摘要： PROBLEM TO BE SOLVED: To provide a two-fluid nozzle capable of improving cleaning effects to a workpiece and reducing damages to the workpiece when atomizing the liquid drops of a cleaning solution, and to provide a substrate cleaning apparatus and method.
SOLUTION: A two-fluid nozzle 20 includes a flow path 20h in which the liquid drops of a cleaning solution formed by mixing the cleaning solution and a gas for forming the liquid drops flow and a discharge opening 20j through which the liquid drops of the cleaning solution that is sent from the flow path 20h are atomized outside. At least one portion of the flow path 20h is curved, and an outlet 20i is provided outside in the diameter direction at the curved portion of the flow path 20h. The outlet 20i is formed to discharge the liquid drops of the cleaning solution flowing outside in the diameter direction at the curved portion of the flow path 20h from the flow path 20h.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够改善对工件的清洁效果并且在雾化清洁溶液的液滴时减少对工件的损害的双流体喷嘴，并且提供基板清洁装置和方法。解决方案：双流体喷嘴20包括流路20h，在该流路20h中，通过混合清洗溶液和用于形成液滴的气体形成的清洗液的液滴和液体滴下的排出口20j 从流路20h送出的清洗液在外部雾化。流路20h的至少一部分是弯曲的，并且出口20i在流路20h的弯曲部分处沿直径方向设置在外侧。出口20i形成为从流路20h排出在流路20h的弯曲部处沿直径方向流出的清洗液的液滴。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2009059826A Device and method for processing substrate 有权
标题翻译：用于处理基板的装置和方法
公开(公告)号：JP2009059826A
公开(公告)日：2009-03-19
申请号：JP2007224800
申请日：2007-08-30
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： AMANO YOSHIFUMI , TOJIMA JIRO , KANEKO SATOSHI , AKUMOTO MASAMI , TOSHIMA TAKAYUKI
IPC分类号： H01L21/306 , H01L21/027 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To precisely and well process a predetermined region of periphery portions of a substrate.
SOLUTION: In a substrate processing device 1 which performs treatments such as an etching, a cleaning or the like to periphery portions of a substrate (wafer 3), the device has: a periphery processing mechanism 7 for processing the periphery portions of the substrate (wafer 3); and a substrate holding mechanism 6 for holding the substrate (wafer 3) which relatively rotates to the periphery processing mechanism 7. The periphery processing mechanism 7 has: a process liquid supplying portion 16 which supplies process liquid to the periphery portions of the substrate (wafer 3); a gas jet portion 17 which is provided adjacent to an interior side to the periphery portions of the substrate (wafer 3) rather than the process liquid supplying portion 16 and jets a gas to the substrate (wafer 3); and a rinse liquid supplying portion 35 which supplies rinse liquid to the periphery portions of the substrate (wafer 3).
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：精确且良好地处理基板周边部分的预定区域。解决方案：在基板（晶片3）的周边部分进行诸如蚀刻，清洁等处理的基板处理装置1中，该装置具有：周边加工机构7，基板（晶片3）; 以及用于保持相对旋转到周边处理机构7的基板（晶片3）的基板保持机构6.周边处理机构7具有：处理液供给部16，其将处理液供给到基板的周边部（晶片 3）; 与基板（晶片3）的周边部分相邻的内侧设置的气体喷射部17，而不是处理液供给部16，并向基板（晶片3）喷射气体。以及向基板（晶片3）的周边部分供给冲洗液的冲洗液供给部35。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2008300453A Substrate-treating device and substrate treatment method 有权
标题翻译：基板处理装置和基板处理方法
公开(公告)号：JP2008300453A
公开(公告)日：2008-12-11
申请号：JP2007142591
申请日：2007-05-29
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： AMANO YOSHIFUMI , TOJIMA JIRO , KANEKO SATOSHI , AKUMOTO MASAMI , TOSHIMA TAKAYUKI
IPC分类号： H01L21/306 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To properly treat a prescribed range of the periphery of a substrate with precision.
SOLUTION: A substrate-treating device 1 for performing treatment, such as, etching and cleaning with respect to the periphery of a substrate (wafer W) comprises a periphery-treating device 4 for treating the periphery of the substrate W, and a substrate-holding device 3 for holding the substrate W rotating relative to the periphery-treating device 4. The periphery-treating device 4 comprises: a treatment liquid supply section 9 for supplying a treatment liquid to the periphery of the substrate W; and a gas-jetting section 10 for jetting a gas toward the substrate W. A treatment liquid storage chamber 11 for dipping the substrate W into a stored treatment liquid is formed at the treatment liquid supply section 9, while being extended along the rotating direction. The gas-jetting section 10 is provided adjacent in the inside of the periphery of the substrate W, as compared with the treatment liquid storage chamber 11.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：精确地适当地处理基板周边的规定范围。解决方案：用于进行相对于基板（晶片W）的周边的蚀刻和清洁的处理的基板处理装置1包括用于处理基板W的周边的周边处理装置4，以及用于保持基板W相对于周边处理装置4旋转的基板保持装置3.周边处理装置4包括：处理液供给部9，其将处理液供给到基板W的周围; 以及用于向基板W喷射气体的气体喷射部10.在沿着旋转方向延伸的同时，在处理液供给部9形成有用于将基板W浸渍到储存处理液中的处理液储存室11。与处理液储存室11相比，气体喷射部10设置在基板W的周围的内侧附近。（C）2009，JPO＆INPIT

9. 发明专利

JP2007311776A Liquid processing equipment 有权
标题翻译：液体加工设备
公开(公告)号：JP2007311776A
公开(公告)日：2007-11-29
申请号：JP2007107726
申请日：2007-04-17
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KANEKO SATOSHI , MATSUMOTO KAZUHISA , ITO KIKO , AKUMOTO MASAMI , TOSHIMA TAKAYUKI , NANBA HIROMITSU
IPC分类号： H01L21/304 , B08B3/02 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a liquid processing apparatus which can control scattering of the mist of process liquid to a substrate. SOLUTION: The liquid processing apparatus includes: a substrate holding member 1 configured to rotate along with a substrate W wherein the substrate W is held in a horizontal state; a rotary cup 3 configured to surround the substrate W held on the substrate holding member 1 and to rotate along with the substrate W; a motor 2 configured to integrally rotate the rotary cup 3 and the substrate holding member 1; a surface process liquid supply nozzle 4 configured to supply a process liquid onto the substrate W; an exhaust/drain section 6 configured to perform gas-exhausting and liquid-draining of the rotary cup 3; and a guide material 35 configured to guide the process liquid supplied to the wafer surface and shaken off by the wafer W from the rotation cup 3 via the surface to the exhaust/drain section 6, which is arranged in exterior of the wafer so that its front surface may carry out almost contiguity with the wafer front surface and which rotates along with the substrate holding member 1 and the rotary cup 3. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种液体处理装置，其能够控制处理液体的雾到基板的散射。液体处理装置包括：基板保持部件1，被配置为与基板W一起旋转，其中基板W保持在水平状态; 旋转杯3，被配置为围绕保持在基板保持部件1上并与基板W一起旋转的基板W; 构造成使旋转杯3和基板保持构件1一体旋转的马达2; 构造成将处理液体供给到基板W上的表面处理液供给喷嘴4; 配置为进行旋转杯3的排气和排液的排气/排出部6; 以及引导材料35，被配置为将供给到晶片表面的处理液引导到晶片W的旋转杯3经由表面驱动到布置在晶片外部的排气/排出部6，前表面可以与晶片前表面几乎相邻，并且与基板保持构件1和旋转杯3一起旋转。（C）2008，JPO和INPIT

10. 发明专利

JP2007311775A Liquid processing equipment 有权
标题翻译：液体加工设备
公开(公告)号：JP2007311775A
公开(公告)日：2007-11-29
申请号：JP2007107725
申请日：2007-04-17
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： AKUMOTO MASAMI , TOSHIMA TAKAYUKI , KANEKO SATOSHI , MATSUMOTO KAZUHISA , ITO KIKO , NANBA HIROMITSU
IPC分类号： H01L21/304 , G03F7/16 , G03F7/30 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a liquid processing apparatus without requiring provision of a special isolation mechanism for exhaust and drain, capable of making the footprint small. SOLUTION: The liquid processing apparatus includes: a substrate holding member 1 configured to rotate along with a substrate W wherein the substrate W is held in a horizontal state; a rotary cup 3 configured to surround the substrate W held on the substrate holding member 1 and to rotate along with the substrate W; a motor 2 configured to integrally rotate the rotary cup 3 and the substrate holding member 1; a surface process liquid supply nozzle 4 configured to supply a process liquid onto the substrate W; and an exhaust/drain section 6 configured to perform gas-exhausting and liquid-draining of the rotary cup 3. The exhaust/drain section 6 includes: an annular drain cup 41 configured to mainly take in and drain the process liquid shaken off from the substrate W; and an exhaust cup 42 surrounding the drain cup 41 and configured to mainly take in and discharge gas components from inside and around the rotary cup 3. Liquid-draining from the drain cup 41 and gas-exhausting from the exhaust cup 42 are performed independently of each other. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种液体处理装置，而不需要设置用于排气和排水的特殊隔离机构，能够使足迹小。液体处理装置包括：基板保持部件1，被配置为与基板W一起旋转，其中基板W保持在水平状态; 旋转杯3，被配置为围绕保持在基板保持部件1上并与基板W一起旋转的基板W; 构造成使旋转杯3和基板保持构件1一体旋转的马达2; 构造成将处理液体供给到基板W上的表面处理液供给喷嘴4; 以及排气/排出部6，其构造为进行排气和排液。排气/排出部6包括：环状排水杯41，其构造成主要吸入和排出从衬底W; 以及排气杯42，其围绕排水杯41并且构造成主要从旋转杯3的内部和周围吸入和排出气体成分。排液杯41的排液和排气杯42的排气独立于彼此。版权所有（C）2008，JPO＆INPIT

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