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1. 发明专利

JP2006253501A Coating and developping device, and its manufacturing method 有权
标题翻译：涂料和开发设备及其制造方法
公开(公告)号：JP2006253501A
公开(公告)日：2006-09-21
申请号：JP2005069723
申请日：2005-03-11
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： AKUMOTO MASAMI , HAYASHI SHINICHI , HAYASHIDA YASUSHI , MATSUOKA NOBUAKI , KIMURA YOSHIO , UEDA KAZUNARI , ITO AKIRA
IPC分类号： H01L21/027
CPC分类号： H01L21/67742 , G03F7/162 , H01L21/6715 , H01L21/67173 , H01L21/67178
摘要： PROBLEM TO BE SOLVED: To cope with both cases that a antireflection film is formed or not when forming the antireflection film on and beneath a resist film, and achieve space saving. SOLUTION: Three-layer unit blocks B3 to B5 for forming a coating film and two-layer unit blocks B1, B2 for developing are alternately laminated on a treatment block S2. As a first or a second antireflection film 31, 33 for forming the antireflection film beneath or on the resist film and a coating unit 32 are formed at the respective unit blocks B3 to B5 for forming the coating film, the space saving can be achieved when forming the antireflection film on and beneath the resist film irrespective of both the caseses that the antireflection film is formed or not on and beneath the resist film. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了应对在抗蚀剂膜上和下面形成抗反射膜时形成抗反射膜的两种情况，并且节省空间。解决方案：用于形成涂膜的三层单元块B3至B5和用于显影的两层单元块B1，B2交替层压在处理块S2上。作为形成涂膜的各单元块B3〜B5，形成第一或第二防反射膜31,33，用于在抗蚀膜上形成防反射膜上的防反射膜和涂覆单元32，可以实现节省空间，在抗蚀剂膜上和下方形成抗反射膜，而不管形成抗反射膜的两种情况与抗蚀剂膜上和下方是否形成。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2006216614A Coating and developing apparatus 有权
标题翻译：涂料和开发设备
公开(公告)号：JP2006216614A
公开(公告)日：2006-08-17
申请号：JP2005025509
申请日：2005-02-01
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： AKUMOTO MASAMI , HAYASHI SHINICHI , HAYASHIDA YASUSHI , MATSUOKA NOBUAKI , KIMURA YOSHIO , UEDA KAZUNARI , ITO AKIRA
IPC分类号： H01L21/027 , B05C11/08 , B05C13/02
CPC分类号： H01L21/67184 , H01L21/67173 , H01L21/67178 , H01L21/67207 , H01L21/67745
摘要： PROBLEM TO BE SOLVED: To provide a coating and developing apparatus that can obtain a high conveyance efficiency, is capable of maintenance by appropriately restraining the height of the apparatus, and can block an increase in an installation area by appropriately restraining the length of the apparatus. SOLUTION: A unit block having a carrying means for carrying units for performing coating treatment before exposure to light and the substrate between the units, and a unit block having a carrying means for carrying units for performing development treatment after exposure to light and the substrate between the units are separated up and down. And the units for performing coating treatment before exposure to light are dispersed to a first laminated block and a second laminated one in front and in rear, and further the layer of both the laminated block sections is used properly depending on whether a reflection prevention film is applied to the upper or lower portion of a resist film. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供可以获得高输送效率的涂覆和显影装置，能够通过适当地限制装置的高度来维持，并且可以通过适当地限制长度来阻止安装面积的增加的装置。解决方案：具有用于承载单元的承载装置的单元块，用于在曝光之前执行涂覆处理和各单元之间的基板;以及单元块，具有用于承载单元，用于在曝光后进行显影处理; 单元之间的基板上下分离。并且在曝光之前进行涂布处理的单元分散到第一层叠块和前后两层叠体，进一步根据防反射膜是否正确地使用两层叠块部的层施加到抗蚀剂膜的上部或下部。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2004214696A Apparatus and method for treating substrate 审中-公开
标题翻译：用于处理基板的装置和方法
公开(公告)号：JP2004214696A
公开(公告)日：2004-07-29
申请号：JP2004093794
申请日：2004-03-26
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： UEDA KAZUNARI , HAYASHI SHINICHI , IIDA NARIAKI , MATSUYAMA YUJI , DEGUCHI YOICHI
IPC分类号： H01L21/677 , H01L21/027 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for treating a substrate which can reduce the influence of the time required for controlling the temperature of substrate, on the reduction of the throughput as much as possible, and to provide a substrate treating apparatus which can accurately perform a temperature control in a unit for treating liquid to a substrate. SOLUTION: Each heat treatment unit of ten steps G3-G5 and each application treatment unit of five steps G1 and G2 are arranged at the periphery of a first main wafer transfer A1 and a second main wafer transfer A2, and in the heat treatment unit G3-G5, by transferring the wafer W while controlling the temperature of the wafer W using an apparatus C for controlling temperature and transferring, the influence of the time required for controlling the temperature of the substrate, on the reduction of the throughput can be reduced as much as possible. COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种可以减少控制基板温度所需的时间的影响的基板的处理装置和方法，尽可能地降低生产量，并提供一种基板处理装置，其可以在用于将液体处理到基板的单元中精确地进行温度控制。解决方案：在第一主晶片转印A1和第二主晶片转印体A2的周边配置有10个步骤G3-G5的各热处理单元和5个阶梯G1，G2的各施工处理单元，处理单元G3-G5，通过使用用于控制温度和转印的设备C控制晶片W的温度同时传送晶片W，控制基板的温度所需的时间对生产能力的降低的影响可以尽可能减少。版权所有（C）2004，JPO＆NCIPI

4. 发明专利

JP2013236097A Application and development apparatus and method of the same 审中-公开
标题翻译：应用与开发设备及其相关方法
公开(公告)号：JP2013236097A
公开(公告)日：2013-11-21
申请号：JP2013148024
申请日：2013-07-16
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： AKUMOTO MASAMI , HAYASHI SHINICHI , HAYASHIDA YASUSHI , MATSUOKA NOBUAKI , KIMURA YOSHIO , UEDA KAZUNARI , ITO AKIRA
IPC分类号： H01L21/027 , B05C9/12 , B05C13/02 , G03F7/16 , G03F7/30 , H01L21/677
CPC分类号： H01L21/67184 , H01L21/67173 , H01L21/67178
摘要： PROBLEM TO BE SOLVED: To reduce the depth dimension in an application and development apparatus which conducts the steps of: forming an anti-reflection film to a substrate; forming a resist film; and performing development on the substrate after exposure.SOLUTION: A COT layer B4 for forming a resist film on a substrate, a BCT layer B5 for forming an anti-reflection film on the lower side of the resist film, a TCT layer B3 for forming the anti-reflection film on the resist film, and DEV layers B1, B2 for performing development treatment are laminated to each other. Delivery stage groups, where delivery stages corresponding to the respective layers are laminated, are provided anterior to and posterior to a lamination body, and the substrate is delivered between the respective layers through the delivery stages. Further, a protection film formation unit, which is for forming a protection film against immersion exposure on a surface of the substrate, is provided at one of the COT layer B4, the BCT layer B5, and the TCT layer B3.
摘要翻译：要解决的问题：为了减少在应用和开发设备中的深度尺寸，其执行以下步骤：将抗反射膜形成到基板上; 形成抗蚀膜; 并且在曝光后在基板上进行显影。解决方案：用于在基板上形成抗蚀剂膜的COT层B4，在抗蚀剂膜的下侧形成抗反射膜的BCT层B5，用于形成的TCT层B3 抗蚀剂膜上的抗反射膜和用于进行显影处理的DEV层B1，B2彼此层叠。交付阶段组，其中分层对应于相应层的交付阶段被提供在层压体之前和之后，并且基板通过输送阶段在相应的层之间输送。此外，在COT层B4，BCT层B5和TCT层B3中的一个上设置用于形成防止浸没在基板表面上的保护膜的保护膜形成单元。

5. 发明专利

JP2013207207A Substrate liquid processing apparatus and substrate liquid processing method 审中-公开
标题翻译：基板液体处理装置和底板液体处理方法
公开(公告)号：JP2013207207A
公开(公告)日：2013-10-07
申请号：JP2012076897
申请日：2012-03-29
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KITANO JUNICHI , UEDA KAZUNARI , SATO TAKAZO , EJIMA KAZUYOSHI , AOKI MASAYA , NAKAMURA TERUHIRO
IPC分类号： H01L21/304 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To reduce running costs required for substrate liquid processing.SOLUTION: A substrate liquid processing apparatus (1) processes a substrate (6) with a mixed liquid in which a first chemical having a predetermined concentration and a predetermined temperature is mixed at a fixed ratio with a second chemical having a predetermined concentration and a predetermined temperature. The substrate liquid processing apparatus (1) comprises: a substrate processing chamber (16) for processing the substrate (6); a first chemical supply part (26) for supplying the first chemical to the substrate processing chamber (16); a second chemical supply part (27) for supplying the second chemical to the substrate processing chamber (16); a mixed liquid recovering part (41) for recovering the mixed liquid of the first chemical and the second chemical from the substrate processing chamber (16); a mixed liquid discarding part (42) which is branched from the mixed liquid recovering part (41), and discards one part of a predetermined amount of the mixed liquid; a first chemical replenishing part (43) for replenishing the mixed liquid recovering part (41) with the same amount of the first chemical as the one part of the predetermined amount of the mixed liquid discarded in the mixed liquid discarding part (42) at a higher concentration than the predetermined concentration of the first chemical; and a communicating part (44) for making the mixed liquid recovering part (41) communicate with the first chemical supply part (26).
摘要翻译：要解决的问题：为了降低基板液体处理所需的运行成本。解决方案：基板液体处理设备（1）用混合液体处理基板（6），其中混合了具有预定浓度和预定温度的第一化学品与具有预定浓度和预定温度的第二化学品以固定比例。基板液体处理装置（1）包括：用于处理基板（6）的基板处理室（16）; 用于将第一化学品供给到基板处理室（16）的第一化学品供给部（26）; 用于将第二化学品供给到基板处理室（16）的第二化学品供给部（27）用于从基板处理室（16）回收第一化学品和第二化学品的混合液体的混合液体回收部分（41）; 混合液体废弃部分（42），其从所述混合液回收部分（41）分支，并且丢弃预定量的所述混合液体的一部分; 用于补充混合液体回收部分（41）的第一化学补充部分（43），所述第一化学补充部分（43）具有与混合液体废弃部分（42）中废弃的预定量的混合液体的一部分相同量的第一化学品，比第一化学品的预定浓度高的浓度; 和用于使混合液回收部（41）与第一化学物供给部（26）连通的连通部（44）。

6. 发明专利

JP2013089689A Substrate processing apparatus 有权
标题翻译：基板加工设备
公开(公告)号：JP2013089689A
公开(公告)日：2013-05-13
申请号：JP2011227104
申请日：2011-10-14
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MINAMIDA JUNYA , UEDA KAZUNARI , KIYAMA SHOGO
IPC分类号： H01L21/027 , H01L21/677
CPC分类号： H01L21/6715 , H01L21/67017 , H01L21/67178
摘要： PROBLEM TO BE SOLVED: To provide a compact substrate processing apparatus in which energy consumption is low when forming a downflow in a transfer block of a substrate.SOLUTION: On a lower side of a first transfer block 142a for performing transfer of a substrate W to a first substrate processing section 2, a second transfer block 142b for transferring the substrate W to a second substrate processing section 2 is stacked. A first fan filter unit 31 forms a downflow of clean gas in the first transfer block 142a. A second fan filter unit 32 forms a downflow of clean gas in the second transfer block 142b by taking the downflow from an air outlet 151 provided in a floor plate 15 at the bottom of the first transfer block 142a.
摘要翻译：要解决的问题：提供一种在形成衬底的转移块中的向下流动时能量消耗低的紧凑的衬底处理装置。解决方案：在用于将衬底W传送到第一衬底处理部分2的第一传送块142a的下侧堆叠用于将衬底W传送到第二衬底处理部分2的第二传输块142b。第一风扇过滤器单元31在第一传递块142a中形成清洁气体的下流。第二风扇过滤器单元32通过从设置在第一转移块142a的底部的底板15中的出气口151向下流动而在第二转移块142b中形成清洁气体的下流。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2011193014A Coating and developing system 有权
标题翻译：涂料与开发体系
公开(公告)号：JP2011193014A
公开(公告)日：2011-09-29
申请号：JP2011103217
申请日：2011-05-02
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： AKUMOTO MASAMI , HAYASHI SHINICHI , HAYASHIDA YASUSHI , MATSUOKA NOBUAKI , KIMURA YOSHIO , UEDA KAZUNARI , ITO AKIRA
IPC分类号： H01L21/027 , B05C11/08 , B65G49/07 , H01L21/677
CPC分类号： H01L21/67184 , H01L21/67173 , H01L21/67178
摘要： PROBLEM TO BE SOLVED: To reduce the depth dimension of a coating and developing system performing the steps of forming an antireflection film to a substrate, forming a resist film, and performing development to the substrate after exposure.
SOLUTION: A COT layer B4 for forming a resist film on a substrate, a BCT layer B5 for forming an antireflection film on a lower side of the resist film, a TCT layer B3 for forming an antireflection film above the resist film, and DEV layers B1, B2 for performing development processing are layered on each other. A delivery stage group formed by stacking a delivery stage corresponding to each layer is provided in the front and rear of the layered products, and the substrate can be delivered between each layer via the delivery stage. In a chemical unit such as a unit coating a resist liquid on the substrate, tripartite cups disposed side by side are arranged in a common treatment container, and liquid treatment such as resist coating is performed in these cups.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了减少涂覆和显影系统的深度尺寸，该涂层和显影系统执行将抗反射膜形成到基板上的步骤，形成抗蚀剂膜，并且在曝光后对基板进行显影。解决方案：用于在基板上形成抗蚀剂膜的COT层B4，用于在抗蚀剂膜的下侧形成抗反射膜的BCT层B5，在抗蚀膜上形成抗反射膜的TCT层B3，并且用于进行显影处理的DEV层B1，B2彼此层叠。在层叠体的前后设置有通过层叠与各层对应的输送台形成的输送台组，并且可以经由输送台在各层之间输送基板。在将基板上涂布抗蚀剂液体的单元等化学单元配置在同一处理容器中并列配置的三方杯，在这些杯中进行抗蚀剂涂布等液体处理。版权所有（C）2011，JPO＆INPIT

8. 发明专利

JP2010034566A Coating and developing apparatus 审中-公开
标题翻译：涂料和开发设备
公开(公告)号：JP2010034566A
公开(公告)日：2010-02-12
申请号：JP2009211737
申请日：2009-09-14
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： AKUMOTO MASAMI , HAYASHI SHINICHI , HAYASHIDA YASUSHI , MATSUOKA NOBUAKI , KIMURA YOSHIO , UEDA KAZUNARI , ITO AKIRA
IPC分类号： H01L21/677 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a coating and developing apparatus that performs the developing processing of a post-exposure substrate after formation of a coating film including a resist film on the substrate, wherein high efficiency of carryingr and high throughput are achieved. SOLUTION: A carrier block S1, a processing block S2, and an interface are disposed in alignment. On the processing block S2, wafer carrying paths extending horizontally in the straight form from the carrier block S1 to the interface block S3 are formed for moving a main arm, and the carrying paths are divided into the two in the anteroposterior direction. A processing unit for pre-exposure processing is provided along each carrying path, and the substrate processing lines formed in such a manner are stacked. A substrate is transferred from the carrier block to the main arm, and then each of the substrate processing lines performs pre-exposure processing. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种涂覆和显影装置，其在形成包括基板上的抗蚀剂膜的涂膜之后执行曝光后基板的显影处理，其中实现高效率的输送和高生产率。解决方案：载体块S1，处理块S2和接口被对准布置。在处理块S2上，形成从载体块S1向接口块S3以直线形式水平延伸的晶片承载路径，用于移动主臂，并且将运送路径沿前后方向分成两部分。沿着每个承载路径设置用于预曝光处理的处理单元，并且以这种方式形成的基板处理线被堆叠。将衬底从载体块转移到主臂，然后每个衬底处理线进行预曝光处理。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2006229184A Coating, developing device and method 有权
标题翻译：涂料，开发设备和方法
公开(公告)号：JP2006229184A
公开(公告)日：2006-08-31
申请号：JP2005294579
申请日：2005-10-07
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： AKUMOTO MASAMI , HAYASHI SHINICHI , HAYASHIDA YASUSHI , MATSUOKA NOBUAKI , KIMURA YOSHIO , UEDA KAZUNARI , ITO AKIRA
IPC分类号： H01L21/027
CPC分类号： H01L21/67184 , H01L21/00 , H01L21/6715 , H01L21/67178 , H01L21/6719
摘要： PROBLEM TO BE SOLVED: To save the space when an anti-reflection film is formed above and below a resist film by stacking a unit block for forming a resist film and a unit block for forming an anti-reflection film, and to deal with both cases where the anti-reflection film is formed and not formed while simplifying the software. SOLUTION: Unit blocks for forming a coating film, i. e. a TCT layer B3, a COT layer B4 and a BCT layer B5, and a unit block for development processing, i. e. DEV layers B1 and B2, are formed in layers in a processing block S2. Both cases where an anti-reflection film is formed and not formed can be dealt with by selecting a unit block being used in the TCT layer B3, the COT layer B4 and the BCT layer B5, and the software can be simplified by suppressing complication of a conveyance program. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了通过堆叠用于形成抗蚀剂膜的单元块和用于形成抗反射膜的单元块，在抗蚀剂膜上下形成防反射膜以节省空间，并且处理形成防反射膜并且不形成的两种情况，同时简化软件。
解决方案：用于形成涂膜的单元块，即 TCT层B3，COT层B4和BCT层B5，以及用于显影处理的单位块，i。即 DEV层B1和B2在处理块S2中以层形式形成。可以通过选择在TCT层B3，COT层B4和BCT层B5中使用的单位块来处理形成并未形成抗反射膜的两种情况，并且可以通过抑制软件的复杂化来简化软件运输程序。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2011119650A Substrate processing apparatus 有权
标题翻译：基板加工设备
公开(公告)号：JP2011119650A
公开(公告)日：2011-06-16
申请号：JP2010180538
申请日：2010-08-11
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MINAMIDA JUNYA , UEDA KAZUNARI
IPC分类号： H01L21/67 , H01L21/677
CPC分类号： H01L21/67196 , H01L21/67778
摘要： PROBLEM TO BE SOLVED: To reduce the manufacturing cost and energy consumption of a substrate processing apparatus.
SOLUTION: The substrate processing apparatus includes a substrate loading/unloading unit (substrate delivery chamber (12)) transferring a substrate (2) accommodated in a carrier (3), a substrate transfer chamber (14 (25)) communicating with the substrate loading/unloading unit via a substrate loading/unloading port (37 (39)), a plurality of substrate processing chambers (15-24 (26-35)) disposed along the substrate transfer chamber (14 (25)), a substrate transfer device (36 (38)) accommodated in the substrate transfer chamber (14 (25)) and transferring the substrate (2) between the substrate loading/unloading unit and the substrate processing chambers (15-24 (26-35)), and clean air flowing unit (41 (42)) allowing clean air to flow along the substrate transfer chamber (14 (25)).
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：为了降低基板处理装置的制造成本和能量消耗。基板处理装置包括：转印容纳在载体（3）中的基板（2）的基板装载/卸载单元（基板输送室（12）），与基板传送室（14（25））连通的基板传送室基板装载/卸载单元经由基板装载/卸载端口（37（39）），沿着基板传送室（14（25））设置的多个基板处理室（15-24（26-35）），容纳在基板传送室（14（25））中的基板传送装置（36（38）），并且在基板装载/卸载单元和基板处理室之间传送基板（2）（15-24（26-35））和清洁空气流动单元（41（42）），其允许清洁空气沿着基板传送室（14（25））流动。版权所有（C）2011，JPO＆INPIT

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