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1. 发明授权

US06440864B1 Substrate cleaning process 失效
标题翻译：基材清洗工艺
公开(公告)号：US06440864B1
公开(公告)日：2002-08-27
申请号：US09607822
申请日：2000-06-30
申请人： Thomas J. Kropewnicki , Jeremiah T. Pender , Henry Fong , Charles Peter Auglis , Raymond Hung , Hongqing Shan
发明人： Thomas J. Kropewnicki , Jeremiah T. Pender , Henry Fong , Charles Peter Auglis , Raymond Hung , Hongqing Shan
IPC分类号： H01L2100
CPC分类号： H01L21/02063 , B08B7/0035 , H01L21/31116 , H01L21/31138 , H01L21/67069 , H05K3/26
摘要： A substrate cleaning method comprises exposing a substrate 30 to an energized process gas to remove residue 60 and resist material 50 from the substrate 30. In one version, the process gas comprises cleaning gas, such as an oxygen-containing gas, and an additive gas, such as NH3. In one version, the process gas is introduced to remove residue 60 and resist material 50 from the substrate and to remove residue from surfaces in the process chamber 75.
摘要翻译：基板清洁方法包括将基板30暴露于通电的处理气体以去除残留物60并从基板30抵抗材料50.在一种形式中，工艺气体包括清洁气体，例如含氧气体和添加气体，如NH3。在一个版本中，引入工艺气体以除去残留物60并从衬底抵抗材料50并从处理室75中的表面去除残留物。

2. 发明授权

US06524432B1 Parallel-plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density 失效
标题翻译：具有感应天线的平行板电极等离子体反应器和等离子体离子密度的可调径向分布
公开(公告)号：US06524432B1
公开(公告)日：2003-02-25
申请号：US09539814
申请日：2000-03-30
申请人： Kenneth Collins , Michael Rice , John Trow , Douglas Buchberger , Eric Askarinam , Joshua Tsui , David Groechel , Raymond Hung
发明人： Kenneth Collins , Michael Rice , John Trow , Douglas Buchberger , Eric Askarinam , Joshua Tsui , David Groechel , Raymond Hung
IPC分类号： H01L2100
CPC分类号： H01J37/321 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01L21/6831
摘要： There is disclosed a plasma reactor for processing a semiconductor workpiece such as a wafer, including a chamber having an overhead ceiling with a three-dimensional shape such as a hemisphere or dome. The reactor further includes an inductive antenna over the ceiling which may be conformal or nonconformal in shape with the ceiling. The ceiling may be a semiconductor material so that it can function as both a window for the inductive field of the antenna as well as an electrode which can be grounded, or to which RF power may be applied or which may be allowed to float electrically. The reactor includes various features which allow the radial distribution of the plasma ion density across the wafer surface to be adjusted to an optimum distribution for processing uniformity across the wafer surface.
摘要翻译：公开了一种用于处理诸如晶片的半导体工件的等离子体反应器，其包括具有诸如半球或圆顶的三维形状的架空天花板的室。反应器还包括在天花板上的感应天线，其可以与天花板的形状保形或不共形。天花板可以是半导体材料，使得其可以用作天线的感应场的窗口，以及可以接地的电极，或者可以施加RF功率或可以允许电力浮动的电极。反应器包括允许跨晶片表面的等离子体离子密度的径向分布被调整到最佳分布以处理跨晶片表面的均匀性的各种特征。

3. 发明授权

US6077384A Plasma reactor having an inductive antenna coupling power through a parallel plate electrode 失效
标题翻译：等离子体反应器具有通过平行板电极耦合电力的感应天线
公开(公告)号：US6077384A
公开(公告)日：2000-06-20
申请号：US597577
申请日：1996-02-02
申请人： Kenneth S. Collins , Michael Rice , John Trow , Douglas Buchberger , Eric Askarinam , Joshua Chiu-Wing Tsui , David W. Groechel , Raymond Hung
发明人： Kenneth S. Collins , Michael Rice , John Trow , Douglas Buchberger , Eric Askarinam , Joshua Chiu-Wing Tsui , David W. Groechel , Raymond Hung
IPC分类号： H05H1/46 , A21D2/18 , A23G3/34 , A23G9/52 , A23L1/0524 , A23L1/0526 , A23L1/0532 , A23L1/054 , A23L1/187 , A23L1/214 , A23L1/236 , A23L1/308 , A23L2/60 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/683 , H05H1/00
CPC分类号： H01J37/32458 , A21D2/185 , A23G3/346 , A23G9/52 , A23L19/115 , A23L2/60 , A23L27/30 , A23L27/32 , A23L29/231 , A23L29/238 , A23L29/256 , A23L29/27 , A23L33/21 , A23L9/12 , H01J37/321 , H01J37/32165 , H01J37/32467 , H01J37/32522 , H01J37/32871 , H01L21/6831 , A23G2200/06 , H01J2237/3345 , H01J2237/3346
摘要： The invention is embodied by a plasma reactor for processing a workpiece, including a reactor enclosure defining a processing chamber, a semiconductor window, a base within the chamber for supporting the workpiece during processing thereof, a gas inlet system for admitting a plasma precursor gas into the chamber, and an inductive antenna adjacent a side of the semiconductor window opposite the base for coupling power into the interior of the chamber through the semiconductor window electrode.
摘要翻译：本发明由用于处理工件的等离子体反应器实现，包括限定处理室的反应器壳体，半导体窗口，用于在其处理期间支撑工件的室内的基座，用于将等离子体前体气体引入的气体入口系统所述腔室和靠近所述半导体窗口的与所述基座相对的一侧的感应天线，用于通过所述半导体窗口电极将功率耦合到所述腔室的内部。

4. 发明授权

US5965035A Self aligned contact etch using difluoromethane and trifluoromethane 失效
标题翻译：使用二氟甲烷和三氟甲烷进行自对准接触蚀刻
公开(公告)号：US5965035A
公开(公告)日：1999-10-12
申请号：US956641
申请日：1997-10-23
申请人： Raymond Hung , Jian Ding , Joseph P. Caulfield , Gerald Z. Yin
发明人： Raymond Hung , Jian Ding , Joseph P. Caulfield , Gerald Z. Yin
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/768
CPC分类号： H01L21/31116 , H01L21/76804
摘要： An oxide etch process that is highly selective to nitride, thereby being beneficial for a self-aligned contact etch of silicon dioxide to an underlying thin layer of silicon nitride. The process uses difluoromethane (CH.sub.2 F.sub.2) for its strong polymer forming and a greater amount of trifluoromethane (CHF.sub.3) for its strong etching, and with a high diluent fraction of argon (Ar). The etch process is performed at a low pressure of about 20 milliTorr in a high-density plasma etching chamber.
摘要翻译：对氮化物具有高度选择性的氧化物蚀刻工艺，从而有利于将二氧化硅自动对准接触蚀刻到下面的氮化硅薄层。该方法使用二氟甲烷（CH 2 F 2）作为其强聚合物形成和更大量的三氟甲烷（CHF 3）用于其强腐蚀，并且具有高稀释剂部分的氩（Ar）。蚀刻工艺在高密度等离子体蚀刻室中在约20毫乇的低压下进行。

5. 发明授权

US06174451B1 Oxide etch process using hexafluorobutadiene and related unsaturated hydrofluorocarbons 失效
标题翻译：使用六氟丁二烯和相关不饱和氢氟烃的氧化物蚀刻工艺
公开(公告)号：US06174451B1
公开(公告)日：2001-01-16
申请号：US09193056
申请日：1998-11-16
申请人： Raymond Hung , Joseph P. Caulfield , Hongching Shan , Ruiping Wang , Gerald Z. Yin
发明人： Raymond Hung , Joseph P. Caulfield , Hongching Shan , Ruiping Wang , Gerald Z. Yin
IPC分类号： H01L2131
CPC分类号： H01L21/31116
摘要： An oxide etching process, particular useful for selectively etching oxide over a feature having a non-oxide composition, such as silicon nitride and especially when that feature has a corner that is prone to faceting during the oxide etch. The invention uses one of three unsaturated 3- and 4-carbon fluorocarbons, specifically hexafluorobutadiene (C4F6), pentafluoropropylene (C3HF5), and trifluoropropyne (C3HF3), all of which have boiling points below 10° C. and are commercially available. The unsaturated hydrofluorocarbon together with argon is excited into a high-density plasma in a reactor which inductively couples plasma source power into the chamber and RF biases the pedestal electrode supporting the wafer. Preferably, a two-step etch is used process is used in which the above etching gas is used in the main step to provide a good vertical profile and a more strongly polymerizing fluorocarbon such as difluoromethane (CH2F2) is added in the over etch to protect the nitride corner.
摘要翻译：一种氧化物蚀刻工艺，特别用于在具有非氧化物组成的特征（例如氮化硅）上选择性地蚀刻氧化物，特别是当该特征具有在氧化物蚀刻期间易于刻面的拐角时。本发明使用沸点低于10℃的三种不饱和3-和4-碳碳氟化合物，特别是六氟丁二烯（C 4 F 6），五氟丙烯（C 3 HF 5）和三氟丙炔（C 3 H 3 F 3）中的一种，并且可商购。将不饱和氢氟烃与氩一起激发成反应器中的高密度等离子体，其将等离子体源功率感应耦合到室中，并且RF偏置支撑晶片的基座电极。优选地，使用两步蚀刻方法，其中在主要步骤中使用上述蚀刻气体以提供良好的垂直分布，并且在过蚀刻中加入更强的聚合碳氟化合物如二氟甲烷（CH 2 F 2）以保护氮化物角。

6. 发明授权

US06613691B1 Highly selective oxide etch process using hexafluorobutadiene 失效
标题翻译：使用六氟丁二烯的高选择性氧化物蚀刻工艺
公开(公告)号：US06613691B1
公开(公告)日：2003-09-02
申请号：US09675360
申请日：2000-09-29
申请人： Raymond Hung , Joseph P. Caulfield , Hongching Shan , Ruiping Wang , Gerald Z. Yin
发明人： Raymond Hung , Joseph P. Caulfield , Hongching Shan , Ruiping Wang , Gerald Z. Yin
IPC分类号： H01L21475
CPC分类号： H01L21/31116
摘要： An oxide etching process, particular useful for selectively etching oxide over a feature having a non-oxide composition, such as silicon nitride and especially when that feature has a corner that is prone to faceting during the oxide etch. The invention preferably uses the unsaturated 4-carbon fluorocarbons, specifically hexafluorobutadiene (C4F6), which has a below 10°C. and is commercially available. The hexafluorobutadiene together with argon is excited into a high-density plasma in a reactor which inductively couples plasma source power into the chamber and RF biases the pedestal electrode supporting the wafer. Preferably, a two-step etch is used process is used in which the above etching gas is used in the main step to provide a good vertical profile and a more strongly polymerizing fluorocarbon such as difluoromethane (CH2F2) is added in the over etch to protect the nitride corner.
摘要翻译：一种氧化物蚀刻工艺，特别用于在具有非氧化物组成的特征（例如氮化硅）上选择性地蚀刻氧化物，特别是当该特征具有在氧化物蚀刻期间易于刻面的拐角时。本发明优选使用低于10℃的不饱和4-碳碳氟化合物，特别是六氟丁二烯（C 4 F 6）。并且是可商购的。将六氟丁二烯与氩一起激发成反应器中的高密度等离子体，其将等离子体源功率感应耦合到室中，并且RF偏置支撑晶片的基座电极。优选地，使用两步蚀刻方法，其中在主要步骤中使用上述蚀刻气体以提供良好的垂直分布，并且在过蚀刻中加入更强的聚合碳氟化合物如二氟甲烷（CH 2 F 2）以保护氮化物角。

7. 发明授权

US06329292B1 Integrated self aligned contact etch 失效
标题翻译：集成自对准接触蚀刻
公开(公告)号：US06329292B1
公开(公告)日：2001-12-11
申请号：US09112095
申请日：1998-07-09
申请人： Raymond Hung , Joseph Patrick Caulfield , Jian Ding
发明人： Raymond Hung , Joseph Patrick Caulfield , Jian Ding
IPC分类号： H01L21302
CPC分类号： H01L21/76802 , H01L21/31116
摘要： An integrated self aligned contact process includes oxide etch with high oxide etch rate, integrated selective oxide etch and nitride liner removal with high selectivity to corner nitride with the ability to remove the bottom nitride liner, and stripping of all polymer and photoresist. C4F8 and CH2F2 are used for the high selectivity oxide etch step. The unique behavior of CH2F2 in high density plasma allows polymer protection to form on the nitride corner/sidewall while at the same time etching the bottom nitride.
摘要翻译：集成的自对准接触工艺包括具有高氧化蚀刻速率的氧化物蚀刻，集成的选择性氧化物蚀刻和氮化物衬垫去除，具有高度选择性的角氮化物，具有去除底部氮化物衬垫的能力以及剥离所有聚合物和光致抗蚀剂。 C4F8和CH2F2用于高选择性氧化物蚀刻步骤。 CH2F2在高密度等离子体中的独特行为允许在氮化物角/侧壁上形成聚合物保护，同时蚀刻底部氮化物。

8. 发明授权

US6027606A Center gas feed apparatus for a high density plasma reactor 失效
标题翻译：用于高密度等离子体反应器的中心供气装置
公开(公告)号：US6027606A
公开(公告)日：2000-02-22
申请号：US108950
申请日：1998-06-30
申请人： John Mohn , Mei Chang , Raymond Hung , Kenneth Collins , Ru-Liang Julian Lee
发明人： John Mohn , Mei Chang , Raymond Hung , Kenneth Collins , Ru-Liang Julian Lee
IPC分类号： H05H1/42 , C23F4/00 , H01J37/32 , H01L21/02 , H01L21/302 , H01L21/3065 , H05H1/00
CPC分类号： H01J37/32449 , H01J37/321 , H01J37/3211 , H01J37/3222 , H01J37/32467 , Y10S156/914
摘要： The invention is embodied by a plasma reactor for processing a workpiece, including a reactor enclosure defining a processing chamber, a semiconductor ceiling window, a base within the chamber for supporting the workpiece during processing thereof, the semiconductor ceiling including a gas inlet system for admitting a plasma precursor gas into the chamber through the ceiling, and apparatus for coupling plasma source power into the chamber.
摘要翻译：本发明通过用于加工工件的等离子体反应器来实现，该等离子体反应器包括限定处理室的反应器壳体，半导体天花板窗，用于在其处理期间支撑工件的室内的基座，半导体天花板包括用于进入的气体入口系统通过天花板进入腔室的等离子体前体气体，以及用于将等离子体源功率耦合到腔室中的装置。

9. 发明申请

US20050217014A1 Automatic flusher for tank-type toilet 失效
标题翻译：罐式马桶自动冲洗机
公开(公告)号：US20050217014A1
公开(公告)日：2005-10-06
申请号：US11075696
申请日：2005-03-10
申请人： Raymond Hung , Mark Chow
发明人： Raymond Hung , Mark Chow
IPC分类号： E03D5/00 , E03D5/10
CPC分类号： E03D5/105
摘要： An automatic flushing system is equipped with a buoyancy mechanism to unseat a valve set in a tank of a toilet. The automatic flushing system, equipped with battery power, includes sets of sensing, actuating, latching, buoyancy, unseat/seat and valve members. The battery power only provides electrical power to sensing and actuating members to release a float from an engaged position to a release position. Thus, the buoyancy of the float may unseat a valve to open a drain of the tank.
摘要翻译：自动冲洗系统配备有浮力机构，用于将设置在马桶的罐中的阀安装。配有电池电源的自动冲洗系统包括一组感测，启动，闭锁，浮力，非安装/座椅和阀门构件。电池电源仅提供用于感测和致动构件的电力，以将浮子从接合位置释放到释放位置。因此，浮子的浮力可能会使阀移开以打开储罐的排水口。

10. 发明授权

US06623596B1 Plasma reactor having an inductive antenna coupling power through a parallel plate electrode 失效
标题翻译：等离子体反应器具有通过平行板电极耦合电力的感应天线
公开(公告)号：US06623596B1
公开(公告)日：2003-09-23
申请号：US09523824
申请日：2000-03-13
申请人： Kenneth S. Collins , Michael Rice , John Trow , Douglas Buchberger , Eric Askarinam , Joshua Chiu-Wing Tsui , David W. Groechel , Raymond Hung
发明人： Kenneth S. Collins , Michael Rice , John Trow , Douglas Buchberger , Eric Askarinam , Joshua Chiu-Wing Tsui , David W. Groechel , Raymond Hung
IPC分类号： C23F100
CPC分类号： H01J37/32458 , A21D2/185 , A23G3/346 , A23G9/52 , A23G2200/06 , A23L2/60 , A23L9/12 , A23L19/115 , A23L27/30 , A23L27/32 , A23L29/231 , A23L29/238 , A23L29/256 , A23L29/27 , A23L33/21 , H01J37/321 , H01J37/32165 , H01J37/32467 , H01J37/32522 , H01J37/32871 , H01J2237/3345 , H01J2237/3346 , H01L21/6831
摘要： A plasma reactor for processing a workpiece includes a reactor enclosure defining a processing chamber, a base within the chamber for supporting the workpiece during processing thereof, a semiconductor window electrode overlying the base, a gas inlet system for admitting a plasma precursor gas into the chamber, an electrical terminal coupled to the semiconductor window electrode, an inductive antenna adjacent one side of the semiconductor window electrode opposite the base for coupling power into the interior of said chamber through the semiconductor window electrode.
摘要翻译：一种用于加工工件的等离子体反应器包括限定处理室的反应器壳体，用于在其处理期间支撑工件的室内的基座，覆盖在基底上的半导体窗口电极，用于将等离子体前体气体引入室中的气体入口系统耦合到所述半导体窗口电极的电端子，与所述半导体窗电极的与所述半导体窗电极相对的一侧的电感天线，用于通过所述半导体窗电极将功率耦合到所述室的内部。

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