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1. 发明专利

GB1019694A Improvements in or relating to lamp shade carriers 未知
公开(公告)号：GB1019694A
公开(公告)日：1966-02-09
申请号：GB946564
申请日：1964-03-06
申请人： KENNETH COLLINS
IPC分类号： F21V17/00 , F21V17/06
摘要： 1,019,694. Lampshade carriers. K. COLLINS. July 31, 1964 [March 6, 1964], No. 9465/64. Heading F4R. An open frame formed at the lower end with a ring 1 for attachment to the bulb socket and shaped immediately below an upper ring 3 to form a seating 2a for a ring in the lampshade, has a series of lateral projections 5 on the ring 3 to prevent accidental dislodging of the shade. The seating 2a may have a slight inward and downward inclination so that the ring on the lampshade centres itself automatically.

2. 发明专利

GB683419A Improvements in electric lamp shade carriers 未知
公开(公告)号：GB683419A
公开(公告)日：1952-11-26
申请号：GB925950
申请日：1950-04-14
申请人： KENNETH COLLINS
IPC分类号： F21V1/02
摘要： 683,419. Lampshade carriers. COLLINS, K. March 8, 1951 [April 14, 1950], No. 9259/50. Class 75(ii) In a lampshade carrier of the kind having two-part articulated arms 2, 2a extending upwardly from a lampholder ring 1 and terminating in a lampshade support, formed by stepped radial arms 6, at least one of the stepped arms 6 has a key member 8 extending radially from the rising portion thereof above the shade supporting portion to engage the upper side of a lampshade frame ring 12 and hold the shade 11 in whatever angular position is given to the upper parts 2a of the carrier arms. The key members 8 may be formed of wire shaped as shown and welded to the arm 6 of the shade support, and the two-part carrier arms may have a locking nut 4 to hold them in the desired angular relationship. Alternatively the key member 8 may be formed integral with the lampshade support by appropriate bending of the wire thereof. The Provisional Specification describes a key member in the form of a curved wire clip arranged to co-operate with one of the lamp shade rib members.

3. 发明申请

US20070042580A1 ION IMPLANTED INSULATOR MATERIAL WITH REDUCED DIELECTRIC CONSTANT 审中-公开
标题翻译：具有降低介电常数的离子植入绝缘材料
公开(公告)号：US20070042580A1
公开(公告)日：2007-02-22
申请号：US11551196
申请日：2006-10-19
申请人： Amir Al-Bayati , Rick Roberts , Kenneth Collins , Ken MacWilliams , Hiroji Hanawa , Kartik Ramaswamy , Biagio Gallo , Andrew Nguyen
发明人： Amir Al-Bayati , Rick Roberts , Kenneth Collins , Ken MacWilliams , Hiroji Hanawa , Kartik Ramaswamy , Biagio Gallo , Andrew Nguyen
IPC分类号： H01L21/425
CPC分类号： H01L21/823864 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/02321 , H01L21/0234 , H01L21/31695 , H01L21/7682 , H01L21/76825 , H01L21/823871 , H01L23/5329 , H01L23/53295 , H01L2221/1047 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： An integrated microelectronic circuit has a multi-layer interconnect structure overlying the transistors consisting of stacked metal pattern layers and insulating layers separating adjacent ones of said metal pattern layers. Each of the insulating layers is a dielectric material with plural gas bubbles distributed within the volume of the dielectric material to reduce the dielectric constant of the material, the gas bubbles being formed by ion implantation of a gaseous species into the dielectric material.
摘要翻译：集成的微电子电路具有覆盖由堆叠的金属图案层和分离相邻的所述金属图案层的绝缘层的晶体管的多层互连结构。每个绝缘层是具有分布在电介质材料的体积内的多个气泡的介电材料，以降低材料的介电常数，气泡通过将气态物质离子注入电介质材料而形成。

4. 发明申请

US20060293732A1 Thermoelectric cooler (TEC) heat exchanger for intravascular heat exchange catheter 审中-公开
标题翻译：用于血管内热交换导管的热电冷却器（TEC）热交换器
公开(公告)号：US20060293732A1
公开(公告)日：2006-12-28
申请号：US11168087
申请日：2005-06-27
申请人： Kenneth Collins , Grant Palmer
发明人： Kenneth Collins , Grant Palmer
IPC分类号： A61F7/00
CPC分类号： A61F7/12 , A61F7/02 , A61F2007/0001 , A61F2007/0054 , A61F2007/0076 , A61F2007/0086
摘要： A patient temperature control catheter or pad is warmed or cooled by coolant circulating through it. The coolant in turn is warmed or cooled as it flows through a cartridge that is placed against a control system TEC. For cooling, heat is removed from the TEC by tap water flowing through a reservoir that is in contact with the TEC. If desired, a small turbine can be disposed in the reservoir to be driven by the flowing tap water, and the turbine is coupled to a pump element that pumps the coolant through the catheter or pad.
摘要翻译：患者温度控制导管或垫由循环通过其的冷却剂加热或冷却。冷却剂随着流过与控制系统TEC相对放置的筒体而被加热或冷却。为了冷却，通过与TEC接触的储存器中的自来水从TEC中除去热量。如果需要，可以将小型涡轮机设置在储存器中以由流动的自来水驱动，并且涡轮联接到通过导管或垫泵送冷却剂的泵元件。

5. 发明申请

US20060263540A1 Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing 有权
标题翻译：光吸收层的低温等离子体沉积和高速光学退火的方法
公开(公告)号：US20060263540A1
公开(公告)日：2006-11-23
申请号：US11131899
申请日：2005-05-17
申请人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash Mayur , Amir Al-Bayati , Andrew Nguyen
发明人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash Mayur , Amir Al-Bayati , Andrew Nguyen
IPC分类号： H05H1/24
CPC分类号： H05H1/46
摘要： A method of processing a workpiece includes introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on the workpiece, and exposing the workpiece to optical radiation that is at least partially absorbed in the optical absorber layer.
摘要翻译：一种处理工件的方法包括将光吸收材料前体气体引入到包含工件的室中，在折入路径中产生RF振荡环形等离子体电流，其包括通过施加RF源功率覆盖工件的工艺区域，以便沉积在工件上的光吸收材料层，以及将工件暴露于至少部分地吸收在光吸收层中的光辐射。

6. 发明申请

US20060132119A1 Configurable test interface device 审中-公开
标题翻译：可配置的测试接口设备
公开(公告)号：US20060132119A1
公开(公告)日：2006-06-22
申请号：US11015261
申请日：2004-12-17
申请人： Kenneth Collins , Allen Baldvins
发明人： Kenneth Collins , Allen Baldvins
IPC分类号： G01R31/28
CPC分类号： G01R31/2889
摘要： The configurable interface device (CID) is a modular, high-density, high-performance electronic test interface that includes a circuit card assembly and mechanical interface. The mechanical interface provides proper alignment to an interface test adapter (ITA), and electrical engagement, or disengagement. The circuit card assembly routes external high-speed electrical stimulus and response signals to sockets where configurable interconnections re-route these signals to an interface test adapter, and are carried through to the device under test (DUT).
摘要翻译：可配置接口设备（CID）是一种模块化，高密度，高性能的电子测试接口，包括电路卡组件和机械接口。机械接口提供对接口测试适配器（ITA）的正确对准，以及电气接合或脱离接合。电路卡组件将外部高速电刺激和响应信号传送到插座，其中可配置互连将这些信号重新路由到接口测试适配器，并被传送到被测设备（DUT）。

7. 发明申请

US20060019039A1 Plasma immersion ion implantation reactor having multiple ion shower grids 有权
标题翻译：具有多个离子淋浴网格的等离子体浸没离子注入反应器
公开(公告)号：US20060019039A1
公开(公告)日：2006-01-26
申请号：US10895784
申请日：2004-07-20
申请人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
发明人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
IPC分类号： C23C14/00
CPC分类号： H01J37/32357 , C23C14/046 , C23C14/48 , C23C16/045 , H01J37/32412
摘要： A plasma immersion ion implantation process for implanting a selected species at a desired ion implantation depth profile in a workpiece is carried out in a reactor chamber having a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower process region, each of the ion shower grids having plural orifices in mutual registration from grid to grid, the plural orifices oriented in a non-parallel direction relative to a surface plane of the respective ion shower grid. The process includes placing a workpiece in the process region, the workpiece having a workpiece surface generally facing the surface plane of the closest one of the plural ion shower grids, and furnishing the selected species into the ion generation region. The process further includes evacuating the process region, and applying plasma source power to generate a plasma of the selected species in the ion generation region. The process also includes applying successive grid potentials to successive ones of the grids and applying a bias potential to the workpiece. The combination of the grid and bias potentials corresponds to the desired ion implantation depth profile in the workpiece.
摘要翻译：在具有一组多个并联离子淋浴网格的反应室中进行用于在工件中以期望的离子注入深度分布植入选定物种的等离子体浸没离子注入方法，该多个平行离子淋浴网将腔室分成上部离子产生区域和下部处理区域，每个离子淋浴栅格具有从栅格到栅格相互配准的多个孔，多个孔相对于各个离子喷淋栅格的表面平行于非平行方向。该工艺包括将工件放置在工艺区域中，工件具有大致面对多个离子淋浴栅格中最接近的一个的表面的工件表面，并将所选择的物质提供到离子产生区域中。该方法还包括抽空处理区域，以及施加等离子体源功率以在离子产生区域中产生所选物种的等离子体。该过程还包括将连续的栅格电势施加到连续的栅格并向工件施加偏置电位。栅格和偏置电位的组合对应于工件中期望的离子注入深度分布。

8. 发明申请

US20050232728A1 Methods and apparatus for transferring conductive pieces during semiconductor device fabrication 失效
标题翻译：用于在半导体器件制造期间传导导电片的方法和装置
公开(公告)号：US20050232728A1
公开(公告)日：2005-10-20
申请号：US11095943
申请日：2005-03-31
申请人： Michael Rice , Claes Bjorkman , Jun Zhao , Kenneth Collins , Thomas Miu
发明人： Michael Rice , Claes Bjorkman , Jun Zhao , Kenneth Collins , Thomas Miu
IPC分类号： B23K3/06 , B65G1/00 , H01L21/00 , H01L21/48 , H01L21/60 , H01L21/68 , H05K3/34
CPC分类号： H05K3/3478 , H01L21/4853 , H01L21/67144 , H01L21/6835 , H01L23/544 , H01L24/11 , H01L24/742 , H01L2224/05573 , H01L2224/11003 , H01L2224/11334 , H01L2224/13099 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01051 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/1461 , H01L2924/19041 , H01L2924/30105 , H05K2201/10212 , H05K2203/0338 , H05K2203/041 , H01L2924/00 , H01L2224/05599
摘要： In a first aspect, a programmable transfer device is provided for transferring conductive pieces to electrode pads of a target substrate. The programmable transfer device includes (1) a transfer substrate; and (2) a plurality of individually addressable electrodes formed on the transfer substrate. Each electrode is adapted to selectively attract and hold a conductive piece during transfer of the conductive piece to an electrode pad of a target substrate. Numerous other aspects are provided.
摘要翻译：在第一方面，提供了一种用于将导电片传送到目标衬底的电极焊盘的可编程传送装置。可编程转移装置包括（1）转移基板; 和（2）形成在转印基板上的多个可单独寻址的电极。每个电极适于在将导电片传送到目标衬底的电极焊盘的过程中选择性地吸引和保持导电片。提供了许多其他方面。

9. 发明申请

US20050211547A1 Reactive sputter deposition plasma reactor and process using plural ion shower grids 审中-公开
标题翻译：反应溅射沉积等离子体反应器和使用多个离子淋浴网格的方法
公开(公告)号：US20050211547A1
公开(公告)日：2005-09-29
申请号：US10873609
申请日：2004-06-22
申请人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
发明人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
IPC分类号： C23C14/00 , C23C14/34 , C23C14/35 , C23C16/04 , C23C16/507 , H01J37/32
CPC分类号： H01J37/32449 , C23C14/0036 , C23C14/358 , C23C16/045 , C23C16/507 , H01J37/32357
摘要： A reactive sputter deposition process is carried out in a reactor chamber having a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower process region, each of the ion shower grids having plural orifices in mutual registration from grid to grid, each orifice being oriented in a non-parallel direction relative to a surface plane of the respective grid. A workpiece is placed in the process region, the workpiece having a workpiece surface generally facing the surface plane of nearest one of the ion shower grids. The process includes sputtering deposition precursor species from a sputter target comprising a semiconductor species in the ion generation region, applying RF plasma source power to the ion generation region so as to generate a plasma of the deposition precursor species sputtered from the target, applying successive grid potentials to successive ones of the grids to create a flux of ions through at least some of the plural grids, and furnishing a gas species into the reactor chamber for combining with the semiconductor atoms to form molecules that deposit on the workpiece surface.
摘要翻译：反应性溅射沉积工艺在具有一组多个平行离子淋浴网格的反应器室中进行，所述多个并联离子淋浴网将腔室分成上部离子产生区域和下部处理区域，每个离子淋浴网格具有相互配准的多个孔口网格到网格，每个孔口相对于相应网格的表面平面在非平行方向上定向。工件被放置在工艺区域中，工件的工件表面一般面对最接近离子淋浴网格的表面。该方法包括从离子产生区域中包含半导体物质的溅射靶溅射沉积前体物质，将RF等离子体源功率施加到离子产生区域，以产生从靶溅射的沉积前体物质的等离子体，施加连续格栅通过至少一些多个栅格产生离子通量的电势，并且将气体物质提供到反应器室中以与半导体原子组合以形成沉积在工件表面上的分子。

10. 发明申请

US20050211171A1 Chemical vapor deposition plasma reactor having an ion shower grid 审中-公开
标题翻译：具有离子淋浴网格的化学气相沉积等离子体反应器
公开(公告)号：US20050211171A1
公开(公告)日：2005-09-29
申请号：US10873474
申请日：2004-06-22
申请人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
发明人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
IPC分类号： C23C16/00 , C23C16/04 , C23C16/507 , H01J37/32
CPC分类号： H01J37/32449 , C23C16/045 , C23C16/507 , H01J37/32357
摘要： A plasma reactor for processing a semiconductor workpiece includes a reactor chamber and an ion shower grid dividing the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction relative to a surface plane of the grid. A workpiece support in the process region has a workpiece support surface in facing relationship to the ion shower grid. The reactor further includes a reactive species source for introducing into the ion generation region a chemical vapor deposition precursor species, a vacuum pump coupled to the process region, a plasma source power applicator for generating a plasma in the ion generation region and a grid potential source coupled to the ion shower grid. The orifices through the grid have an aspect ratio sufficient to limit ion trajectories in the process region to a narrow angular range about the non-parallel direction and a resistance to gas flow sufficient to support a pressure drop of at least a factor of about 4 across the grid.
摘要翻译：用于处理半导体工件的等离子体反应器包括反应室和将室分成上离子产生区域和下处理区域的离子喷淋栅格，离子喷淋栅格具有相对于表面在非平行方向上取向的多个孔口电网的平面在工艺区域中的工件支撑件具有与离子淋浴网格面对的工件支撑表面。所述反应器还包括用于将化学气相沉积前体物质，耦合到所述工艺区域的真空泵引入所述离子产生区域中的反应物质源，用于在所述离子产生区域中产生等离子体的等离子体源功率施加器和栅极电位源耦合到离子淋浴网格。通过电网的孔口具有足以将过程区域中的离子轨迹限制在围绕非平行方向的窄角度范围的宽高比，以及足以支持至少约4倍的压降的气流阻力电网。

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