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    • 2. 发明授权
      US06183655B2 Tunable process for selectively etching oxide using fluoropropylene and a hydrofluorocarbon 失效
    • Tunable process for selectively etching oxide using fluoropropylene and a hydrofluorocarbon
    • 使用氟丙烯和氢氟烃选择性地蚀刻氧化物的可调谐方法
    • US06183655B2
    • 2001-02-06
    • US09049862
    • 1998-03-27
    • Ruiping Wang , Gerald Z. Yin , Robert W. Wu , Jian Ding
    • Ruiping Wang , Gerald Z. Yin , Robert W. Wu , Jian Ding
    • C03C2568
    • H01L21/31116
    • A plasma etch process, particularly applicable to a self-aligned contact etch or other advanced structures requiring high-selectivity to nitride or other non-oxide materials and producing no etch stop. The process is preferably performed in a high-density plasma reactor for etching holes with either high or low aspect rations. In this process, hexafluoropropylene (C3F6) is the principal etching gas and another hydrofluorocarbon such as CH2F2 or C3H2F6 is added at least in part for its polymer-forming ability, which increases selectivity of etching oxide to nitride. The process gas also includes a substantial amount of an inactive gas such as argon. The process gas mixture can be balanced between the active etching gas and the polymer former in proportions to optimize selectivity over other materials without the occurrence of etch stop in narrow contact holes and with a wide process window.
    • 等离子体蚀刻工艺，特别适用于需要对氮化物或其他非氧化物材料的高选择性并且不产生蚀刻停止的自对准接触蚀刻或其它高级结构。 该方法优选在高密度等离子体反应器中进行，用于蚀刻具有高或低纵横比的孔。 在该方法中，六氟丙烯（C 3 F 6）是主要的蚀刻气体，并且至少部分地由于其聚合物形成能力而添加另一种氢氟烃，例如CH 2 F 2或C 3 H 2 F 6，这增加了蚀刻氧化物对氮化物的选择性。 工艺气体还包括大量惰性气体如氩气。 工艺气体混合物可以在有效蚀刻气体和聚合物成型剂之间以比例平衡，以优于其它材料的选择性，而不会在狭窄的接触孔和宽的工艺窗口中发生蚀刻停止。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
    • 3. 发明授权
      US6074959A Method manifesting a wide process window and using hexafluoropropane or other hydrofluoropropanes to selectively etch oxide 失效
    • Method manifesting a wide process window and using hexafluoropropane or other hydrofluoropropanes to selectively etch oxide
    • 表现出广泛的工艺窗口并使用六氟丙烷或其他氢氟丙烷来选择性地蚀刻氧化物的方法
    • US6074959A
    • 2000-06-13
    • US964504
    • 1997-11-05
    • Ruiping Wang , Gerald Z. Yin , Robert W. Wu , Jian Ding
    • Ruiping Wang , Gerald Z. Yin , Robert W. Wu , Jian Ding
    • H01L21/311 , H01L21/302
    • H01L21/31116
    • A plasma etch process, particularly applicable to a self-aligned contact etch or other advanced structures requiring high-selectivity to nitride or other non-oxide materials and no etch stop. The process is preferably performed in a high-density plasma reactor for etching holes with either high or low aspect rations. In this process, hexafluoropropane (C.sub.3 H.sub.2 F.sub.6) is the principal etching gas in the presence of a substantial amount of an inactive gas such as argon. The process can also be used with the closely related gases heptafluoropropane (C.sub.3 HF.sub.7) and pentafluoropropane (C.sub.3 H.sub.3 F.sub.5). The process may use one or more of the these gases in proportions to optimize selectivity over other materials without the occurrence of etch stop in narrow contact holes and with a wide process window. Difluoromethane (CH.sub.2 F.sub.2) or other fluorocarbons may be combined with the above gases for optimum selectivity for a design of a specific contact feature.
    • 等离子体蚀刻工艺，特别适用于需要对氮化物或其他非氧化物材料进行高选择性且无蚀刻停止的自对准接触蚀刻或其他高级结构。 该方法优选在高密度等离子体反应器中进行，用于蚀刻具有高或低纵横比的孔。 在该方法中，六氟丙烷（C 3 H 2 F 6）是在大量惰性气体如氩气存在下的主蚀刻气体。 该方法也可与紧密相关的气体七氟丙烷（C 3 H F 7）和五氟丙烷（C 3 H 3 F 5）一起使用。 该方法可以使用一种或多种这些气体的比例来优化比其它材料的选择性，而不会在狭窄的接触孔中和在宽的工艺窗口中发生蚀刻停止。 二氟甲烷（CH 2 F 2）或其它碳氟化合物可与上述气体组合，以获得特定接触特征设计的最佳选择性。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
    • 4. 发明授权
      US06361705B1 Plasma process for selectively etching oxide using fluoropropane or fluoropropylene 有权
    • Plasma process for selectively etching oxide using fluoropropane or fluoropropylene
    • 使用氟丙烷或氟丙烯选择性蚀刻氧化物的等离子体方法
    • US06361705B1
    • 2002-03-26
    • US09259536
    • 1999-03-01
    • Ruiping Wang , Gerald Z. Yin , Hao A. Lu , Robert W. Wu , Jian Ding
    • Ruiping Wang , Gerald Z. Yin , Hao A. Lu , Robert W. Wu , Jian Ding
    • H01L21316
    • H01L21/31116
    • A plasma etch process, particularly applicable to an self-aligned contact etch in a high-density plasma for selectively etching oxide over nitride, although selectivity to silicon is also achieved. In the process, a fluoropropane or a fluoropropylene is a principal etching gas in the presence of a substantial amount of an inactive gas such as argon. Good nitride selectivity has been achieved with hexafluoropropylene (C3F6), octafluoropropane (C3F8), heptafluoropropane (C3HF7), hexafluoropropane (C3H2F6). The process may use one or more of the these gases in proportions to optimize selectivity and a wide process window. Difluoromethane (CH2F2) or other fluorocarbons may be combined with the above gases, particularly with C3F6 for optimum selectivity over other materials without the occurrence of etch stop in narrow contact holes and with a wide process window.
    • 等离子体蚀刻工艺，特别适用于高密度等离子体中的自对准接触蚀刻，用于选择性地蚀刻氮化物上的氧化物，尽管也可以实现对硅的选择性。 在此过程中，氟丙烷或氟丙烯是在大量惰性气体如氩气存在下的主要蚀刻气体。 使用六氟丙烯（C 3 F 6），八氟丙烷（C 3 F 8），七氟丙烷（C 3 H F 7），六氟丙烷（C 3 H 2 F 6）已经实现了良好的氮化物选择性。 该方法可以使用一种或多种这些气体的比例来优化选择性和宽的工艺窗口。 二氟甲烷（CH 2 F 2）或其它碳氟化合物可以与上述气体，特别是与C3F6组合，以优于其他材料的选择性，而不会在狭窄的接触孔和宽的工艺窗口中发生蚀刻停止。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
    • 5. 发明授权
      US06380096B2 In-situ integrated oxide etch process particularly useful for copper dual damascene 失效
    • In-situ integrated oxide etch process particularly useful for copper dual damascene
    • 原位一体化氧化物蚀刻工艺特别适用于铜双镶嵌
    • US06380096B2
    • 2002-04-30
    • US09201590
    • 1998-11-30
    • Hoiman Hung , Joseph P Caulfield , Sum-Yee Betty Tang , Jian Ding , Tianzong Xu
    • Hoiman Hung , Joseph P Caulfield , Sum-Yee Betty Tang , Jian Ding , Tianzong Xu
    • H01L21302
    • H01L21/02063 , H01L21/31116 , H01L21/76802 , H01L21/76808 , Y10S438/906 , Y10S438/954
    • An integrated in situ oxide etch process particularly useful for a counterbore dual-damascene structure over copper having in one inter-layer dielectric level a lower nitride stop layer, a lower oxide dielectric, a lower nitride stop layer, an upper oxide dielectric layer, and an anti-reflective coating (ARC). The process is divided into a counterbore etch and a trench etch with photolithography for each, and each step is preferably performed in a high-density plasma reactor having an inductively coupled plasma source primarily generating the plasma and a capacitively coupled pedestal supporting the wafer and producing the bias power. The counterbore etch preferably includes at least four substeps of opening the ARC, etching through the upper oxide and nitride layers, selectively etching the lower oxide layer but stopping on the lower nitride layer, and a post-etch treatment for removing residue. The trench etch preferably includes the five substeps of opening the ARC, etching through the upper oxide layer but stopping on the upper nitride layers, a first post-etch treatment for removing residue, a nitride removal of the exposed portions of the upper and lower nitride layers, and a second post-etch treatment for remaining further residues. The oxide etches selective to nitride are accomplished using a fluorocarbon chemistry with high bias and a high temperature for a silicon-based scavenger for fluorine placed next to the plasma. The nitride etches and removal are accomplished by adding an oxygen-containing gas to a fluorocarbon. The final nitride removal is accomplished with very low bias power to increase selectivity to nitride and reduce sputtering of the underlying copper. The post-etch treatments are oxygen plasmas with zero bias power.
    • 一种集成的原位氧化物蚀刻工艺，特别适用于铜上的沉孔双镶嵌结构，具有一层间电介质层，一层较低的氮化物阻挡层，一层较低的氧化物介电层，一层较低的氮化物阻挡层， 抗反射涂层（ARC）。 该工艺分别用光刻法分为沉孔蚀刻和沟槽蚀刻，并且每个步骤优选在具有主要产生等离子体的电感耦合等离子体源的高密度等离子体反应器和支撑晶片的电容耦合基座并且产生 偏置力。 沉孔蚀刻优选包括打开ARC的至少四个子步骤，蚀刻通过上部氧化物和氮化物层，选择性地蚀刻低氧化物层但停止在下部氮化物层上，以及用于去除残留物的蚀刻后处理。 沟槽蚀刻优选包括打开ARC的五个子步骤，蚀刻穿过上部氧化物层但停止在上部氮化物层上，第一次蚀刻后处理以除去残余物，去除上部和下部氮化物的暴露部分的氮化物 层，以及用于剩余另外的残余物的第二次蚀刻后处理。 对氮化物的选择性的氧化物蚀刻是使用氟离子化学方法实现的，该化合物具有高偏压和高温，用于放置在等离子体旁边的用于氟的硅基清除剂。 通过向碳氟化合物中加入含氧气体来实现氮化物蚀刻和去除。 最终的氮化物去除通过非常低的偏置功率实现，以增加对氮化物的选择性并减少底层铜的溅射。 蚀刻后处理是具有零偏压功率的氧等离子体。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
    • 7. 发明授权
      US06238588B1 High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process 失效
    • High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process
    • 高压高反应性稀释气体含量高等离子体离子密度等离子体氧化物蚀刻工艺
    • US06238588B1
    • 2001-05-29
    • US08733554
    • 1996-10-21
    • Kenneth Collins , David Groechel , Raymond Hung , Michael Rice , Gerald Yin , Jian Ding , Chunshi Cui
    • Kenneth Collins , David Groechel , Raymond Hung , Michael Rice , Gerald Yin , Jian Ding , Chunshi Cui
    • B44C122
    • H01L21/02063 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01L21/31116 , H01L21/6831
    • The invention is embodied in a method of processing a semiconductor workpiece in a plasma reactor chamber, including supplying a polymer and etchant precursor gas containing at least carbon and fluorine into the chamber at a first flow rate sufficient of itself to maintain a gas pressure in the chamber in a low pressure range below about 20 mT, supplying a relatively non-reactive gas into the chamber at second flow rate sufficient about one half or more of the total gas flow rate into the chamber, in combination with the first flow rate of the precursor gas, to maintain the gas pressure in the chamber in a high pressure range above 20 mT, and applying plasma source power into the chamber to form a high ion density plasma having an ion density in excess of 1010 ions per cubic centimeter. In one application of the invention, the workpiece includes an oxygen-containing overlayer to be etched by the process and a non-oxygen-containing underlayer to be protected from etching, the precursor gas dissociating in the plasma into fluorine-containing etchant species which etch the oxygen-containing layer and carbon-containing polymer species which accumulate on the non-oxygen-containing underlayer. Alternatively, the high pressure range may be defined as a pressure at which the skin depth of the inductive field exceeds {fraction (1/10)} of the gap between the inductive antenna and the workpiece.
    • 本发明体现在一种在等离子体反应器室中处理半导体工件的方法，包括以足以自动维持气体压力的第一流量将至少含有碳和氟的聚合物和蚀刻剂前体气体供应到室中 在低于大约20mT的低压范围内，将第二流量的第二流量的相对非反应性气体供应到室内的总气体流速的约一半以上，并与第一流量 将气体压力保持在高于20mT的高压范围内，并将等离子体源功率施加到腔室中以形成离子密度超过每立方厘米1010离子的高离子密度等离子体。 在本发明的一个应用中，工件包括通过该方法蚀刻的含氧覆层和不受蚀刻保护的非含氧底层，前体气体在等离子体中解离成含氟蚀刻剂，其蚀刻 含氧层和积聚在非含氧底层上的含碳聚合物种类。 或者，高压范围可以被定义为感应场的趋肤深度超过感应天线和工件之间的间隙的{分数（1/10）}的压力。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
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