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1. 发明授权

US06225639B1 Method of monitoring a patterned transfer process using line width metrology 有权
标题翻译：使用线宽度量法监测图案转移过程的方法
公开(公告)号：US06225639B1
公开(公告)日：2001-05-01
申请号：US09384459
申请日：1999-08-27
申请人： Thomas E. Adams , Thomas S. Frederick , Scott Jessen , John M. McIntosh , Catherine Vartuli
发明人： Thomas E. Adams , Thomas S. Frederick , Scott Jessen , John M. McIntosh , Catherine Vartuli
IPC分类号： G01N2186
CPC分类号： H01L22/20 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A patterned transfer process in the manufacture of a semiconductor device is monitored. Patterned features formed on a semiconductor layer to be etched are scanned for generating a first amplitude modulated waveform intensity signal. The first amplitude modulated waveform intensity signal is sampled to extract a first measurement population of critical dimension measurements. The patterned features are etched and then scanned for generating a second amplitude modulated waveform intensity signal. The second amplitude modulated waveform intensity signal is then sampled to extract a second measurement population of critical dimension measurements, which are then cross-correlated to obtain correlation values of the etching process.
摘要翻译：监视半导体器件制造中的图案转印工艺。扫描形成在要蚀刻的半导体层上的图形特征，以产生第一幅度调制波形强度信号。对第一幅度调制波形强度信号进行采样，以提取关键尺寸测量的第一测量群。蚀刻图案特征，然后扫描以产生第二幅度调制波形强度信号。然后对第二幅度调制波形强度信号进行采样，以提取关键尺寸测量的第二测量群，然后交叉相关，以获得蚀刻过程的相关值。

2. 发明授权

US06627885B1 Method of focused ion beam pattern transfer using a smart dynamic template 有权
标题翻译：使用智能动态模板的聚焦离子束图案转移方法
公开(公告)号：US06627885B1
公开(公告)日：2003-09-30
申请号：US09631545
申请日：2000-08-03
申请人： John M. McIntosh , Erik C. Houge , Fred A. Stevie , Catherine Vartuli , Scott Jessen
发明人： John M. McIntosh , Erik C. Houge , Fred A. Stevie , Catherine Vartuli , Scott Jessen
IPC分类号： H01J3726
CPC分类号： G03F1/74 , G03F1/84 , H01J37/28 , H01J2237/2817
摘要： The present invention provides a method of forming a dynamic template with a focused beam. The method includes forming a desired template that represents a desired image, forming an actual template that represents an actual image, such as a photolithographic mask or a semiconductor device feature, and comparing the desired template to the actual template to yield a deviation template. In one embodiment the deviation template is formed by subtracting the actual template from the desired template.
摘要翻译：本发明提供了一种用聚焦光束形成动态模板的方法。该方法包括形成表示期望图像的所需模板，形成表示实际图像的实际模板，例如光刻掩模或半导体器件特征，并将所需模板与实际模板进行比较以产生偏差模板。在一个实施例中，通过从期望的模板中减去实际模板来形成偏差模板。

3. 发明授权

US06577970B2 Method of determining a crystallographic quality of a material located on a substrate 有权
公开(公告)号：US06577970B2
公开(公告)日：2003-06-10
申请号：US09801455
申请日：2001-03-08
申请人： Erik C. Houge , John M. McIntosh , Larry E. Plew , Fred A. Stevie , Catherine Vartuli
发明人： Erik C. Houge , John M. McIntosh , Larry E. Plew , Fred A. Stevie , Catherine Vartuli
IPC分类号： G01N3700
CPC分类号： G01N23/225
摘要： The present invention provides a method of determining a crystallographic quality of a material located on a substrate. The method includes determining a set of crystallographic solutions for an unknown crystallographic orientation, and subsequently comparing the set of crystallographic solutions to adjacent known crystallographic orientations to determine the unknown crystallographic orientation. In a preferred embodiment, the set of crystallographic solutions may be a rank of crystallographic solutions which may represent the most probable crystallographic orientations. The rank of crystallographic solutions, in an alternative embodiment, may be represented by a vote, a fit and a confidence index.

4. 发明授权

US06265235B1 Method of sectioning of photoresist for shape evaluation 失效
标题翻译：用于形状评估的光刻胶的切片方法
公开(公告)号：US06265235B1
公开(公告)日：2001-07-24
申请号：US09383154
申请日：1999-08-25
申请人： John M. McIntosh , Erik C. Houge , Brittin C. Kane , Simon J. Molloy , Catherine Vartuli
发明人： John M. McIntosh , Erik C. Houge , Brittin C. Kane , Simon J. Molloy , Catherine Vartuli
IPC分类号： H01L2166
CPC分类号： H01L22/12 , Y10S977/855
摘要： A non-destructive method for evaluating a topographical feature 16 of an integrated circuit 42, such as a photoresist runner, includes core sectioning the feature to remove a small section 22, without damage to the remainder of the wafer 36 on which the integrated circuit is formed. A tool having fine adjustment, such as a micromanipulator with a rod-shaped probe 24 in the form of a glass needle, is used to remove the section for examination and metrology. The section is separated from the underlying substrate surface 14 and can be examined from all sides. Variations in a critical dimension, such as line width W, along the length L of the section, as well as average measurements of the dimension, can be obtained.
摘要翻译：用于评估集成电路42（例如光致抗蚀剂流道）的地形特征16的非破坏性方法包括将该特征切除以去除小部分22的芯，而不损坏其上集成电路的晶片36的其余部分形成。使用具有精细调节的工具，例如具有玻璃针形式的棒状探针24的显微操纵器，用于去除用于检查和计量的部分。该部分与下面的基底表面14分离，并且可以从所有侧面进行检查。可以获得沿截面长度L的临界尺寸（例如线宽W）的变化以及尺寸的平均测量值。

5. 发明授权

US06258610B1 Method analyzing a semiconductor surface using line width metrology with auto-correlation operation 有权
标题翻译：使用自相关运算的线宽度量法分析半导体表面的方法
公开(公告)号：US06258610B1
公开(公告)日：2001-07-10
申请号：US09347313
申请日：1999-07-02
申请人： James W. Blatchford , Scott Jessen , Brittin C. Kane , Nace Layadi , John M. McIntosh , Simon J. Molloy
发明人： James W. Blatchford , Scott Jessen , Brittin C. Kane , Nace Layadi , John M. McIntosh , Simon J. Molloy
IPC分类号： G01R3126
CPC分类号： H01L22/12
摘要： A method for analyzing a semiconductor surface having patterned features on the surface is disclosed. At least one patterned feature is scanned to produce a scanned waveform signal having signal segments corresponding to characteristic surface portions of the patterned feature. The signal segments are processed using an auto-correlation function to produce an auto-correlation signal for each characteristic surface portion of the patterned feature. A reference signal having signal segments corresponding to characteristic surface portions of a known patterned feature is provided and each segment of the auto-correlation signal is compared to the respective signal segments of the reference signal.
摘要翻译：公开了一种用于分析表面上具有图案特征的半导体表面的方法。扫描至少一个图案特征以产生具有对应于图案化特征的特征表面部分的信号段的扫描波形信号。使用自相关函数处理信号段，以对图案化特征的每个特征表面部分产生自相关信号。提供具有对应于已知图案特征的特征表面部分的信号段的参考信号，并将自相关信号的每个段与参考信号的相应信号段进行比较。

6. 外观设计

USD536522S1 Wrist/hand worn mirror 有权
标题翻译：手腕/手戴镜
公开(公告)号：USD536522S1
公开(公告)日：2007-02-13
申请号：US29240850
申请日：2005-10-19
申请人： John M. McIntosh
设计人： John M. McIntosh

7. 发明授权

US6097484A Location of defects using dye penetration 有权
标题翻译：使用染料渗透的缺陷位置
公开(公告)号：US6097484A
公开(公告)日：2000-08-01
申请号：US353860
申请日：1999-07-15
申请人： John M. McIntosh , Brittin C. Kane , Annette M. Crevasse , Todd C. Henry
发明人： John M. McIntosh , Brittin C. Kane , Annette M. Crevasse , Todd C. Henry
IPC分类号： G01N21/91 , G01N21/95 , G01N21/00 , G01N31/00
CPC分类号： G01N21/91 , G01N21/9501
摘要： A method for amplifying defects connected to a top surface of a semiconductor device comprises the steps of applying a dye, removing the dye, and applying a developing gel. The dye enters into defects connected to the top surface of the semiconductor device. After removal of the dye from the top surface and application of the developing gel, the dye contained within the defects leaches into the developing gel to form defect indications. These defect indications have a better optical visibility than the defects themselves. An apparatus for performing this method is also disclosed.
摘要翻译：用于放大连接到半导体器件的顶表面的缺陷的方法包括施加染料，除去染料和施加显影凝胶的步骤。染料进入与半导体器件的顶表面相连的缺陷。从顶部表面除去染料并施加显影凝胶后，包含在缺陷中的染料浸入显影凝胶中以形成缺陷指示。这些缺陷指示具有比缺陷本身更好的光学可视性。还公开了一种用于执行该方法的装置。

8. 发明授权

US07972440B2 Monitoring and control of a fabrication process 有权
标题翻译：监控和制造过程的控制
公开(公告)号：US07972440B2
公开(公告)日：2011-07-05
申请号：US10505197
申请日：2003-02-24
申请人： Erik C. Houge , John M. McIntosh , Robert Francis Jones
发明人： Erik C. Houge , John M. McIntosh , Robert Francis Jones
IPC分类号： C30B33/00
CPC分类号： H01J37/26 , B24B37/044 , C09G1/02 , H01L22/12 , Y10T117/1004 , Y10T117/1008
摘要： A system (10) for monitoring and controlling a fabrication process includes at least a first subsystem (12), a crystallographic analysis subsystem (14), and a second subsystem (16), wherein the first subsystem and second subsystem perform respective fabrication steps on a workpiece. The crystallographic analysis subsystem may be coupled to both the first subsystem and second subsystem. The analysis subsystem acquires crystallographic information from the workpiece after the workpiece undergoes a fabrication step by the first subsystem and then provides information, based on the crystallographic information acquired, for modifying parameters associated with the respective fabrication steps. The system may also include neural networks (24, 28) to adaptively modify, based on historical process data (32), parameters provided to the respective fabrication steps. The analysis subsystem may include a electromagnetic source (61), a detector (66), a processor (67), a controller (68) and a scanning actuator (65).
摘要翻译：用于监测和控制制造过程的系统（10）至少包括第一子系统（12），结晶分析子系统（14）和第二子系统（16），其中第一子系统和第二子系统执行相应的制造步骤工件。晶体分析子系统可以耦合到第一子系统和第二子系统。分析子系统在工件经过第一子系统的制造步骤之后从工件获取晶体学信息，然后基于获得的晶体学信息提供用于修改与各个制造步骤相关的参数的信息。系统还可以包括神经网络（24,28），以根据历史过程数据（32）自适应地修改提供给各个制造步骤的参数。分析子系统可以包括电磁源（61），检测器（66），处理器（67），控制器（68）和扫描致动器（65）。

9. 发明授权

US06727720B2 Probe having a microstylet 有权
标题翻译：探头有一个微型袜子
公开(公告)号：US06727720B2
公开(公告)日：2004-04-27
申请号：US09941085
申请日：2001-08-28
申请人： Erik C. Houge , Ryan K. Maynard , John M. McIntosh , Larry E. Plew , Jeffrey B. Bindell
发明人： Erik C. Houge , Ryan K. Maynard , John M. McIntosh , Larry E. Plew , Jeffrey B. Bindell
IPC分类号： G01R3102
CPC分类号： G01R3/00 , B82Y10/00 , G01R1/06755 , Y10S977/876
摘要： A probe comprising a probe body having a body longitudinal axis and a shoulder, and a microstylet mechanically coupled to the shoulder, and a method of manufacturing the same. The microstylet extends from the shoulder and has a microstylet longitudinal axis coincident the body longitudinal axis with the microstylet having a cross section substantially smaller than a cross section of the probe body.
摘要翻译：一种探针，包括具有身体纵向轴线和肩部的探针体和机械地联接到肩部的微型步骤及其制造方法。微型电动工具从肩部延伸，并且具有与主体纵向轴线重合的微型电子管纵向轴线，该微型电极具有基本上小于探针主体横截面的横截面。

10. 发明授权

US06369891B1 Method of determining accuracy error in line width metrology device 有权
标题翻译：确定线宽测量装置精度误差的方法
公开(公告)号：US06369891B1
公开(公告)日：2002-04-09
申请号：US09346853
申请日：1999-07-02
申请人： Brittin C. Kane , John M. McIntosh
发明人： Brittin C. Kane , John M. McIntosh
IPC分类号： G01B1100
CPC分类号： B82Y15/00 , G01B15/00 , H01J37/28 , H01J2237/2814
摘要： A method of determining the accuracy error in scanning signals of a semiconductor line width metrology device comprises the steps of creating a frequency signature template of a patterned feature formed on a semiconductor layer with a line width metrology measurement device that is in nominal operating condition. Another patterned feature similar to the first patterned feature is scanned and the waveform signal is generated of the line width patterned feature. The waveform signal is processed and converted into a frequency signature which is compared with the frequency signature template.
摘要翻译：确定半导体线宽度测量装置的扫描信号中的精度误差的方法包括以下步骤：利用具有标称工作条件的线宽度量测量装置在半导体层上形成图案化特征的频率特征模板。扫描与第一图案化特征相似的另一图案特征，并且生成线宽图案特征的波形信号。波形信号被处理并转换成与频率签名模板进行比较的频率签名。

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