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    • 5. 发明授权
    • Method for producing a transistor structure
    • 晶体管结构的制造方法
    • US07371650B2
    • 2008-05-13
    • US10532894
    • 2003-10-24
    • Josef BöckRudolf LachnerThomas MeisterReinhard StenglHerbert SchäferMartin Seck
    • Josef BöckRudolf LachnerThomas MeisterReinhard StenglHerbert SchäferMartin Seck
    • H01L21/331
    • H01L29/66272H01L21/8222H01L27/0825H01L29/0821
    • A method for fabricating a transistor structure with a first and a second bipolar transistor having different collector widths is presented. The method includes providing a semiconductor substrate, introducing a first buried layer of the first bipolar transistor and a second buried layer of the second bipolar transistor into the semiconductor substrate, and producing at least a first collector region having a first collector width on the first buried layer and a second collector region having a second collector width on the second buried layer. A first collector zone having a first thickness is produced on the second buried layer for production of the second collector width. A second collector zone having a second thickness is produced on the first collector zone. At least one insulation region is produced that isolates at least the collector regions from one another.
    • 提出了一种制造具有不同集电极宽度的第一和第二双极晶体管的晶体管结构的方法。 该方法包括提供半导体衬底,将第一双极晶体管的第一掩埋层和第二双极晶体管的第二掩埋层引入到半导体衬底中,并且至少在第一掩埋层上产生具有第一集电极宽度的第一集电极区域 层和在第二掩埋层上具有第二集电极宽度的第二集电极区。 在第二掩埋层上产生具有第一厚度的第一收集器区,用于产生第二收集器宽度。 在第一收集器区域上产生具有第二厚度的第二收集器区域。 产生至少一个绝缘区域,其至少隔离收集器区域彼此。