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1. 发明申请

US20080287085A1 RF front-end for a radar system 有权
标题翻译： RF前端用于雷达系统
公开(公告)号：US20080287085A1
公开(公告)日：2008-11-20
申请号：US11803343
申请日：2007-05-14
申请人： Hans Peter Forstner , Rudolf Lachner
发明人： Hans Peter Forstner , Rudolf Lachner
IPC分类号： H04B1/18
CPC分类号： G01S7/032 , G01S13/931 , H01L2223/6677 , H01L2224/48091 , H01L2224/48247
摘要： An RF sender/receiver front-end is disclosed comprising a terminal for receiving an oscillator signal, at least one distribution unit for distributing the oscillator signal into different signal paths, two or more mixer-arrangements for sending a transmit-signal or for receiving an receive-signal, where each mixer-arrangement comprises a mixer and an amplifier for amplifying the oscillator signal and generating the transmit-signal.
摘要翻译：公开了一种RF发送器/接收器前端，其包括用于接收振荡器信号的端子，用于将振荡器信号分配到不同信号路径的至少一个分配单元，用于发送发送信号或用于接收振荡器信号的两个或多个混频器装置接收信号，其中每个混频器装置包括混频器和用于放大振荡器信号并产生发射信号的放大器。

2. 发明申请

US20090189801A1 RF-front-end for a radar system 审中-公开
标题翻译：射频前端用于雷达系统
公开(公告)号：US20090189801A1
公开(公告)日：2009-07-30
申请号：US12321482
申请日：2009-01-21
申请人： Hans Peter Forstner , Rudolf Lachner
发明人： Hans Peter Forstner , Rudolf Lachner
IPC分类号： G01S13/00
CPC分类号： G01S7/032 , G01S13/931 , H01L2223/6677 , H01L2224/48091 , H01L2224/48247
摘要： An RF sender/receiver front-end is disclosed comprising a terminal for receiving an oscillator signal, at least one distribution unit for distributing the oscillator signal into different signal paths, two or more mixer-arrangements for sending a transmit-signal or for receiving an receive-signal, where each mixer-arrangement comprises a mixer and an amplifier for amplifying the oscillator signal and generating the transmit-signal.
摘要翻译：公开了一种RF发送器/接收器前端，其包括用于接收振荡器信号的端子，用于将振荡器信号分配到不同信号路径的至少一个分配单元，用于发送发送信号或用于接收振荡器信号的两个或多个混频器装置接收信号，其中每个混频器装置包括混频器和用于放大振荡器信号并产生发射信号的放大器。

3. 发明申请

US20080278370A1 RF-FRONTEND FOR A RADAR SYSTEM 审中-公开
标题翻译： RF-FRONTEND为雷达系统
公开(公告)号：US20080278370A1
公开(公告)日：2008-11-13
申请号：US11866276
申请日：2007-10-02
申请人： Rudolf Lachner , Hans-Peter Forstner
发明人： Rudolf Lachner , Hans-Peter Forstner
IPC分类号： G01S13/00
CPC分类号： G01S13/87 , G01S7/03 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： An RF front-end includes an input configured to receive an oscillator signal, and an antenna port configured to transmit a transmission signal and receive a reception signal from an antenna. The RF front-end further includes a mixer having an RF-input configured to receive the reception signal, an oscillator input configured to receive a modified oscillator signal, and an output. The mixer is configured to mix the received signal into an intermediate frequency band or a base band using the oscillator signal. Also included is a directional coupler connected to the antenna port, the input for the oscillator signal, and the mixer. The coupler is configured to couple the oscillator signal as a transmission signal to the antenna via the antenna port, and couple the reception signal from the antenna to the RF-input of the mixer. Also included is a first phase shifter or a second phase shifter. The first phase shifter is configured to regulate a phase of the transmission signal, and the second phase shifter is configured to regulate a phase of the oscillator signal to form the modified oscillator signal supplied to the oscillator input of the mixer.
摘要翻译： RF前端包括被配置为接收振荡器信号的输入端和被配置为发送发送信号并从天线接收接收信号的天线端口。 RF前端还包括具有被配置为接收接收信号的RF输入的混频器，被配置为接收修改的振荡器信号的振荡器输入和输出。混频器被配置为使用振荡器信号将接收到的信号混合成中频带或基带。还包括连接到天线端口的定向耦合器，用于振荡器信号的输入端和混频器。耦合器被配置为经由天线端口将振荡器信号作为传输信号耦合到天线，并且将来自天线的接收信号耦合到混频器的RF输入端。还包括第一移相器或第二移相器。第一移相器被配置为调节发送信号的相位，并且第二移相器被配置为调节振荡器信号的相位以形成提供给混频器的振荡器输入的修改的振荡器信号。

4. 发明授权

US07573420B2 RF front-end for a radar system 有权
标题翻译： RF前端用于雷达系统
公开(公告)号：US07573420B2
公开(公告)日：2009-08-11
申请号：US11803343
申请日：2007-05-14
申请人： Hans Peter Forstner , Rudolf Lachner
发明人： Hans Peter Forstner , Rudolf Lachner
IPC分类号： G01S13/00
CPC分类号： G01S7/032 , G01S13/931 , H01L2223/6677 , H01L2224/48091 , H01L2224/48247
摘要： An RF sender/receiver front-end is disclosed comprising a terminal for receiving an oscillator signal, at least one distribution unit for distributing the oscillator signal into different signal paths, two or more mixer-arrangements for sending a transmit-signal or for receiving an receive-signal, where each mixer-arrangement comprises a mixer and an amplifier for amplifying the oscillator signal and generating the transmit-signal.
摘要翻译：公开了一种RF发送器/接收器前端，其包括用于接收振荡器信号的端子，用于将振荡器信号分配到不同信号路径的至少一个分配单元，用于发送发送信号或用于接收振荡器信号的两个或多个混频器装置接收信号，其中每个混频器装置包括混频器和用于放大振荡器信号并产生发射信号的放大器。

5. 发明申请

US20120104574A1 INTEGRATED ANTENNAS IN WAFER LEVEL PACKAGE 有权
标题翻译：集成天线在水平包装
公开(公告)号：US20120104574A1
公开(公告)日：2012-05-03
申请号：US12914274
申请日：2010-10-28
申请人： Josef Boeck , Rudolf Lachner , Maciej Wojnowski , Thorsten Meyer
发明人： Josef Boeck , Rudolf Lachner , Maciej Wojnowski , Thorsten Meyer
IPC分类号： H01L23/552 , H01L21/50 , H01L23/52
CPC分类号： H01L24/20 , G01S7/032 , H01L23/49816 , H01L23/66 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/19 , H01L24/32 , H01L24/81 , H01L24/96 , H01L2223/6677 , H01L2224/0401 , H01L2224/11318 , H01L2224/1132 , H01L2224/12105 , H01L2224/131 , H01L2224/13111 , H01L2224/13139 , H01L2224/13147 , H01L2224/1319 , H01L2224/13191 , H01L2224/13299 , H01L2224/14051 , H01L2224/141 , H01L2224/14505 , H01L2224/14517 , H01L2224/16225 , H01L2224/17517 , H01L2224/21 , H01L2224/2101 , H01L2224/211 , H01L2224/215 , H01L2224/32225 , H01L2224/73204 , H01L2224/81191 , H01L2224/81801 , H01L2224/831 , H01L2924/01029 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/181 , H01L2924/18162 , H01L2924/3512 , H01L2924/384 , H01Q1/44 , H01Q17/00 , H01Q23/00 , H05K3/3436 , H01L2924/014 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor module having one or more integrated antennas in a single package is provided herein to comprise a bonding interconnect structure having a plurality of individual bonding elements that are confined to a relatively small area of the bottom of a package. In particular, the semiconductor module comprises a bonding interconnect structure configured to connect an integrated package to a printed circuit board (PCB), wherein the integrated antenna structures are located at greater center-to-center distance from the IC device than the three dimensional interconnect structures. Therefore, the bonding interconnect structures are confined to a connection area that causes a part of the package containing the one or more antenna structures to extend beyond the bonding interconnect structure as a cantilevered structure. Such a bonding interconnect structure result in a package that is in contact with a PCB at a relatively small area that supports the load of the package.
摘要翻译：本文提供了在单个封装中具有一个或多个集成天线的半导体模块，其包括具有限定在封装的底部的较小区域的多个单独的结合元件的接合互连结构。特别地，半导体模块包括被配置为将集成封装连接到印刷电路板（PCB）的接合互连结构，其中集成天线结构位于距离IC器件更大的中心到距离三维互连结构。因此，接合互连结构被限制在连接区域上，该连接区域使得包含一个或多个天线结构的封装的一部分延伸超过作为悬臂结构的接合互连结构。这种接合互连结构导致在支撑封装负载的较小区域处与PCB接触的封装。

6. 发明申请

US20110037163A1 DEVICE INCLUDING A RING-SHAPED METAL STRUCTURE AND METHOD 有权
标题翻译：包括环形金属结构和方法的装置
公开(公告)号：US20110037163A1
公开(公告)日：2011-02-17
申请号：US12540491
申请日：2009-08-13
申请人： Rudolf Lachner , Josef Boeck , Klaus Aufinger , Herbert Knapp
发明人： Rudolf Lachner , Josef Boeck , Klaus Aufinger , Herbert Knapp
IPC分类号： H01L23/48 , H01L21/60
CPC分类号： H01L23/367 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L23/3107 , H01L23/3128 , H01L23/4334 , H01L24/19 , H01L24/96 , H01L24/97 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/20 , H01L2224/92 , H01L2224/97 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/10329 , H01L2924/12044 , H01L2924/14 , H01L2924/1423 , H01L2924/15174 , H01L2924/15311 , H01L2924/18162 , H01L2924/3025 , H01L2224/96 , H01L2224/82
摘要： A device includes a semiconductor chip with a ring-shaped metal structure extending along the contour of a first main surface of the semiconductor chip. An encapsulation body encapsulates the semiconductor chip and defines a second main surface. An array of external contact pads attaches to the second main surface of the encapsulation body, and at least one external contact pad of the array of external contact pads electrically couples to the ring-shaped metal structure.
摘要翻译：一种器件包括具有沿着半导体芯片的第一主表面的轮廓延伸的环形金属结构的半导体芯片。封装体封装半导体芯片并限定第二主表面。外部接触焊盘的阵列连接到封装体的第二主表面，并且外部接触焊盘阵列中的至少一个外部接触焊盘电耦合到环形金属结构。

7. 发明授权

US07371650B2 Method for producing a transistor structure 有权
标题翻译：晶体管结构的制造方法
公开(公告)号：US07371650B2
公开(公告)日：2008-05-13
申请号：US10532894
申请日：2003-10-24
申请人： Josef Böck , Rudolf Lachner , Thomas Meister , Reinhard Stengl , Herbert Schäfer , Martin Seck
发明人： Josef Böck , Rudolf Lachner , Thomas Meister , Reinhard Stengl , Herbert Schäfer , Martin Seck
IPC分类号： H01L21/331
CPC分类号： H01L29/66272 , H01L21/8222 , H01L27/0825 , H01L29/0821
摘要： A method for fabricating a transistor structure with a first and a second bipolar transistor having different collector widths is presented. The method includes providing a semiconductor substrate, introducing a first buried layer of the first bipolar transistor and a second buried layer of the second bipolar transistor into the semiconductor substrate, and producing at least a first collector region having a first collector width on the first buried layer and a second collector region having a second collector width on the second buried layer. A first collector zone having a first thickness is produced on the second buried layer for production of the second collector width. A second collector zone having a second thickness is produced on the first collector zone. At least one insulation region is produced that isolates at least the collector regions from one another.
摘要翻译：提出了一种制造具有不同集电极宽度的第一和第二双极晶体管的晶体管结构的方法。该方法包括提供半导体衬底，将第一双极晶体管的第一掩埋层和第二双极晶体管的第二掩埋层引入到半导体衬底中，并且至少在第一掩埋层上产生具有第一集电极宽度的第一集电极区域层和在第二掩埋层上具有第二集电极宽度的第二集电极区。在第二掩埋层上产生具有第一厚度的第一收集器区，用于产生第二收集器宽度。在第一收集器区域上产生具有第二厚度的第二收集器区域。产生至少一个绝缘区域，其至少隔离收集器区域彼此。

8. 发明申请

US20060009002A1 Method for producing a transistor structure 有权
标题翻译：晶体管结构的制造方法
公开(公告)号：US20060009002A1
公开(公告)日：2006-01-12
申请号：US10532894
申请日：2003-10-24
申请人： Josef Bock , Rudolf Lachner , Thomas Meister , Reinhard Stengl , Herbert Schafer , Martin Seck
发明人： Josef Bock , Rudolf Lachner , Thomas Meister , Reinhard Stengl , Herbert Schafer , Martin Seck
IPC分类号： H01L21/331 , H01L21/8228
CPC分类号： H01L29/66272 , H01L21/8222 , H01L27/0825 , H01L29/0821
摘要： A method for fabricating a transistor structure with a first and a second bipolar transistor having different collector widths is presented. The method includes providing a semiconductor substrate, introducing a first buried layer of the first bipolar transistor and a second buried layer of the second bipolar transistor into the semiconductor substrate, and producing at least a first collector region having a first collector width on the first buried layer and a second collector region having a second collector width on the second buried layer. A first collector zone having a first thickness is produced on the second buried layer for production of the second collector width. A second collector zone having a second thickness is produced on the first collector zone. At least one insulation region is produced that isolates at least the collector regions from one another.
摘要翻译：提出了一种制造具有不同集电极宽度的第一和第二双极晶体管的晶体管结构的方法。该方法包括提供半导体衬底，将第一双极晶体管的第一掩埋层和第二双极晶体管的第二掩埋层引入到半导体衬底中，并且至少在第一掩埋层上产生具有第一集电极宽度的第一集电极区域层和在第二掩埋层上具有第二集电极宽度的第二集电极区。在第二掩埋层上产生具有第一厚度的第一收集器区，用于产生第二收集器宽度。在第一收集器区域上产生具有第二厚度的第二收集器区域。产生至少一个绝缘区域，其至少隔离收集器区域彼此。

9. 发明授权

US06893935B2 Semiconductor component and fabrication method 有权
标题翻译：半导体元件及制造方法
公开(公告)号：US06893935B2
公开(公告)日：2005-05-17
申请号：US10228241
申请日：2002-08-26
申请人： Rudolf Lachner
发明人： Rudolf Lachner
IPC分类号： H01L21/02 , H01L21/768 , H01L21/20
CPC分类号： H01L28/60 , H01L21/76838 , H01L21/76895
摘要： A thin lower electrode layer having an optimally protected capacitor dielectric is produced and structured. A conventional metallization layer for strip conductors is placed thereon as an upper electrode and structured. The capacitor dielectric can be deposited on a very even, preferably metallic surface (e.g. preferably TiN), sealed by a thin, preferably metallic layer (e.g. TiN) and protected so that is does not become thinned or damaged by other process steps.
摘要翻译：制造并构造具有最佳保护的电容器电介质的薄的下电极层。将常规的带状导电金属化层作为上电极放置在其上并构成。电容器电介质可以沉积在非常均匀的，优选金属表面（例如优选TiN）上，由薄的优选金属层（例如TiN）密封并被保护，使得其不会被其它工艺步骤变薄或损坏。

10. 发明授权

US09103902B2 Packaged antenna and method for producing same 有权
标题翻译：封装天线及其制造方法
公开(公告)号：US09103902B2
公开(公告)日：2015-08-11
申请号：US11746480
申请日：2007-05-09
申请人： Gerhard Lohninger , Johann P. Forstner , Rudolf Lachner
发明人： Gerhard Lohninger , Johann P. Forstner , Rudolf Lachner
IPC分类号： H01Q1/38 , H01Q1/40 , H01Q9/28 , G01S7/03 , H01Q23/00
CPC分类号： H01Q1/40 , G01S7/03 , H01L2224/48091 , H01Q1/38 , H01Q9/285 , H01Q23/00 , Y10T29/49016 , H01L2924/00014
摘要： Electronic apparatus having an antenna chip with a substrate and an antenna structure, and a method of producing the same. The antenna chip is integrated or packaged in a package having a clip mounting surface for mounting the antenna chip, and an encapsulating material. The encapsulating material typically is a plastic mold used in the industrial packaging of integrated circuits. Between the antenna structure and the chip mounting surface, a first void is disposed in the substrate.
摘要翻译：具有带基板的天线芯片和天线结构的电子设备及其制造方法。天线芯片集成或封装在具有用于安装天线芯片的夹子安装表面的封装和封装材料中。封装材料通常是用于集成电路工业封装的塑料模具。在天线结构和芯片安装表面之间，在基板中设置第一空隙。

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