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1. 发明授权

US07799698B2 Deposition-selective etch-deposition process for dielectric film gapfill 失效
标题翻译：用于电介质膜间隙填充的沉积选择性蚀刻沉积工艺
公开(公告)号：US07799698B2
公开(公告)日：2010-09-21
申请号：US11422159
申请日：2006-06-05
申请人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh N. Pham , Farhad K. Moghadam , Zhuang Li , Padmanabhan Krishnaraj
发明人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh N. Pham , Farhad K. Moghadam , Zhuang Li , Padmanabhan Krishnaraj
IPC分类号： H01I21/302
CPC分类号： H01L21/02274 , H01L21/02164 , H01L21/02304 , H01L21/31116 , H01L21/31612
摘要： A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.
摘要翻译：提供沉积/蚀刻/沉积工艺以填充衬底的表面中的间隙。在衬底上形成衬垫，使得当暴露于化学蚀刻剂时形成不同的反应产物。因此，这种反应产物的检测表明，在第一次蚀刻期间沉积的薄膜部分已被去除到进一步暴露于蚀刻剂可以去除衬垫并露出下面的结构的程度。因此，在检测到不同的反应产物后停止蚀刻，并且开始沉积/蚀刻/沉积工艺中的下一次沉积。

2. 发明授权

US07691753B2 Deposition-selective etch-deposition process for dielectric film gapfill 失效
公开(公告)号：US07691753B2
公开(公告)日：2010-04-06
申请号：US11422150
申请日：2006-06-05
申请人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh N. Pham , Farhad K. Moghadam , Zhuang Li , Padmanabhan Krishnaraj
发明人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh N. Pham , Farhad K. Moghadam , Zhuang Li , Padmanabhan Krishnaraj
IPC分类号： H01L21/302
CPC分类号： H01L21/02274 , H01L21/02164 , H01L21/02304 , H01L21/31116 , H01L21/31612
摘要： A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.

3. 发明授权

US07081414B2 Deposition-selective etch-deposition process for dielectric film gapfill 失效
标题翻译：用于电介质膜间隙填充的沉积选择性蚀刻沉积工艺
公开(公告)号：US07081414B2
公开(公告)日：2006-07-25
申请号：US10445240
申请日：2003-05-23
申请人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh N Pham , Farhad K Moghadam , Zhuang Li , Padmanabhan Krishnaraj
发明人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh N Pham , Farhad K Moghadam , Zhuang Li , Padmanabhan Krishnaraj
IPC分类号： H01L21/302
CPC分类号： H01L21/02274 , H01L21/02164 , H01L21/02304 , H01L21/31116 , H01L21/31612
摘要： A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.
摘要翻译：提供沉积/蚀刻/沉积工艺以填充衬底的表面中的间隙。在衬底上形成衬垫，使得当暴露于化学蚀刻剂时形成不同的反应产物。因此，这种反应产物的检测表明，在第一次蚀刻期间沉积的薄膜部分已被去除到进一步暴露于蚀刻剂可以去除衬垫并露出下面的结构的程度。因此，在检测到不同的反应产物后停止蚀刻，并且开始沉积/蚀刻/沉积工艺中的下一次沉积。

4. 发明申请

US20060286764A1 DEPOSITION-SELECTIVE ETCH-DEPOSITION PROCESS FOR DIELECTRIC FILM GAPFILL 失效
公开(公告)号：US20060286764A1
公开(公告)日：2006-12-21
申请号：US11422150
申请日：2006-06-05
申请人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh Pham , Farhad Moghadam , Zhuang Li , Padmanabhan Krishnaraj
发明人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh Pham , Farhad Moghadam , Zhuang Li , Padmanabhan Krishnaraj
IPC分类号： H01L21/76
CPC分类号： H01L21/02274 , H01L21/02164 , H01L21/02304 , H01L21/31116 , H01L21/31612
摘要： A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.

5. 发明申请

US20060228886A1 DEPOSITION-SELECTIVE ETCH-DEPOSITION PROCESS FOR DIELECTRIC FILM GAPFILL 失效
标题翻译：用于电介质膜的沉积选择性蚀刻沉积工艺
公开(公告)号：US20060228886A1
公开(公告)日：2006-10-12
申请号：US11422159
申请日：2006-06-05
申请人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh Pham , Farhad Moghadam , Zhuang Li , Padmanabhan Krishnaraj
发明人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh Pham , Farhad Moghadam , Zhuang Li , Padmanabhan Krishnaraj
IPC分类号： H01L21/44 , H01L21/4763
CPC分类号： H01L21/02274 , H01L21/02164 , H01L21/02304 , H01L21/31116 , H01L21/31612
摘要： A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.
摘要翻译：提供沉积/蚀刻/沉积工艺以填充衬底的表面中的间隙。在衬底上形成衬垫，使得当暴露于化学蚀刻剂时形成不同的反应产物。因此，这种反应产物的检测表明，在第一次蚀刻期间沉积的薄膜部分已被去除到进一步暴露于蚀刻剂可以去除衬垫并露出下面的结构的程度。因此，在检测到不同的反应产物后停止蚀刻，并且开始沉积/蚀刻/沉积工艺中的下一次沉积。

6. 发明授权

US06812153B2 Method for high aspect ratio HDP CVD gapfill 有权
标题翻译：高宽比HDP CVD填隙方法
公开(公告)号：US06812153B2
公开(公告)日：2004-11-02
申请号：US10137132
申请日：2002-04-30
申请人： Zhong Qiang Hua , Dong Qing Li , Zhengquan Tan , Zhuang Li , Michael Chiu Kwan , Bruno Geoffrion , Padmanabhan Krishnaraj
发明人： Zhong Qiang Hua , Dong Qing Li , Zhengquan Tan , Zhuang Li , Michael Chiu Kwan , Bruno Geoffrion , Padmanabhan Krishnaraj
IPC分类号： H01L21302
CPC分类号： H01L21/02164 , C23C16/045 , C23C16/401 , C23C16/402 , C23C16/507 , H01L21/02211 , H01L21/02274 , H01L21/31612 , H01L21/76229
摘要： A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing source, an oxygen-containing source and helium into a substrate processing chamber and forming a plasma from the process gas. The ratio of the flow rate of the helium with respect to the combined flow rate of the silicon source and oxygen source is between 0.5:1 and 3.0:1 inclusive. In one particular embodiment, the process gas consists of monosilane (SiH4), molecular oxygen (O2) and helium.
摘要翻译：一种沉积具有改进的间隙填充能力的高密度等离子体氧化硅层的方法。在一个实施例中，该方法包括将由含硅源，含氧源和氦组成的工艺气体流入衬底处理室并从工艺气体形成等离子体。氦流量相对于硅源和氧源的组合流量的比率在0.5:1和3.0:1之间。在一个具体实施方案中，工艺气体由单硅烷（SiH 4），分子氧（O 2）和氦组成。

7. 发明授权

US07064077B2 Method for high aspect ratio HDP CVD gapfill 失效
标题翻译：高宽比HDP CVD填隙方法
公开(公告)号：US07064077B2
公开(公告)日：2006-06-20
申请号：US10956469
申请日：2004-10-01
申请人： Zhong Qiang Hua , Dong Qing Li , Zhengquan Tan , Zhuang Li , Michael Chiu Kwan , Bruno Geoffrion , Padmanabhan Krishnaraj
发明人： Zhong Qiang Hua , Dong Qing Li , Zhengquan Tan , Zhuang Li , Michael Chiu Kwan , Bruno Geoffrion , Padmanabhan Krishnaraj
IPC分类号： H01L21/302
CPC分类号： H01L21/02164 , C23C16/045 , C23C16/401 , C23C16/402 , C23C16/507 , H01L21/02211 , H01L21/02274 , H01L21/31612 , H01L21/76229
摘要： A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing source, an oxygen-containing source and helium into a substrate processing chamber and forming a plasma from the process gas. The ratio of the flow rate of the helium with respect to the combined flow rate of the silicon source and oxygen source is between 0.5:1 and 3.0:1 inclusive. In one particular embodiment, the process gas consists of monosilane (SiH4), molecular oxygen (O2) and helium.
摘要翻译：一种沉积具有改进的间隙填充能力的高密度等离子体氧化硅层的方法。在一个实施例中，该方法包括将由含硅源，含氧源和氦组成的工艺气体流入衬底处理室并从工艺气体形成等离子体。氦流量相对于硅源和氧源的组合流量的比率在0.5:1和3.0:1之间。在一个具体实施方案中，工艺气体由单硅烷（SiH 4 S 4），分子氧（O 2 O 2）和氦组成。

8. 发明申请

US20050079715A1 Method for high aspect ratio HDP CVD gapfill 失效
标题翻译：高宽比HDP CVD填隙方法
公开(公告)号：US20050079715A1
公开(公告)日：2005-04-14
申请号：US10956469
申请日：2004-10-01
申请人： Zhong Hua , Dong Li , Zhengquan Tan , Zhuang Li , Michael Kwan , Bruno Geoffrion , Padmanabhan Krishnaraj
发明人： Zhong Hua , Dong Li , Zhengquan Tan , Zhuang Li , Michael Kwan , Bruno Geoffrion , Padmanabhan Krishnaraj
IPC分类号： C23C16/04 , C23C16/40 , C23C16/507 , H01L21/316 , H01L21/762 , H01L21/302 , H01L21/31 , H01L21/461 , H01L21/469
CPC分类号： H01L21/02164 , C23C16/045 , C23C16/401 , C23C16/402 , C23C16/507 , H01L21/02211 , H01L21/02274 , H01L21/31612 , H01L21/76229
摘要： A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing source, an oxygen-containing source and helium into a substrate processing chamber and forming a plasma from the process gas. The ratio of the flow rate of the helium with respect to the combined flow rate of the silicon source and oxygen source is between 0.5:1 and 3.0:1 inclusive. In one particular embodiment, the process gas consists of monosilane (SiH4), molecular oxygen (O2) and helium.
摘要翻译：一种沉积具有改进的间隙填充能力的高密度等离子体氧化硅层的方法。在一个实施例中，该方法包括将由含硅源，含氧源和氦组成的工艺气体流入衬底处理室并从工艺气体形成等离子体。氦流量相对于硅源和氧源的组合流量的比率在0.5:1和3.0:1之间。在一个具体实施方案中，工艺气体由单硅烷（SiH 4），分子氧（O 2）和氦组成。

9. 发明授权

US06468927B1 Method of depositing a nitrogen-doped FSG layer 失效
标题翻译：沉积氮掺杂FSG层的方法
公开(公告)号：US06468927B1
公开(公告)日：2002-10-22
申请号：US09574271
申请日：2000-05-19
申请人： Lin Zhang , Wen Ma , Zhuang Li
发明人： Lin Zhang , Wen Ma , Zhuang Li
IPC分类号： H01L2131
CPC分类号： H01L21/02131 , C23C16/401 , C23C16/507 , H01L21/02211 , H01L21/02274 , H01L21/02304 , H01L21/3143 , H01L21/31629 , Y10S438/958
摘要： Gap-fill and damascene methods are disclosed for depositing an insulating thin film of nitrofluorinated silicate glass on a substrate in a process chamber. A high-density plasma, generated from a gaseous mixture of silicon-, fluorine-, oxygen-, and nitrogen-containing gases, deposits a layer of nitrofluorinated silicate glass onto the substrate. For gap-fill applications, the substrate is biased with a bias power density between 4.8 and 11.2 W/cm2 and the ratio of flow rate for the oxygen-containing gas to the combined flow rate for all silicon-containing gases in the process chamber is between 1.0 and 1.8, preferably between 1.2 and 1.4. For damascene applications, the bias power density is less than 3.2 W/cm2, preferably 1.6 W/cm2, and the flow rate ratio is between 1.2 and 3.0. Using optimized parameters, the thin film has a lower dielectric constant and better adhesion properties than fluorosilicate glass.
摘要翻译：公开了间隙填充和镶嵌方法，用于在处理室中的基底上沉积硝基氟化硅酸盐玻璃的绝缘薄膜。由硅，氟，氧和含氮气体的气体混合物产生的高密度等离子体将一层硝基氟化硅酸盐玻璃沉积在基底上。对于间隙填充应用，衬底偏置功率密度在4.8和11.2W / cm2之间，并且含氧气体的流速与处理室中所有含硅气体的组合流速之比为在1.0和1.8之间，优选在1.2和1.4之间。对于镶嵌应用，偏压功率密度小于3.2W / cm2，优选1.6W / cm 2，流速比在1.2和3.0之间。使用优化的参数，薄膜具有比氟硅酸盐玻璃更低的介电常数和更好的粘合性能。

10. 发明申请

US20080102553A1 STABILIZING AN OPENED CARBON HARDMASK 审中-公开
标题翻译：稳定开放的碳化钨
公开(公告)号：US20080102553A1
公开(公告)日：2008-05-01
申请号：US11555160
申请日：2006-10-31
申请人： TAEHO SHIN , Ajey M. Joshi , Zhuang Li , Wei-Te Wu , Jin Chul Son , Jong Hun Choi
发明人： TAEHO SHIN , Ajey M. Joshi , Zhuang Li , Wei-Te Wu , Jin Chul Son , Jong Hun Choi
IPC分类号： H01L21/00
CPC分类号： H01L21/67069 , H01L21/0332 , H01L21/31122 , H01L21/31144
摘要： A process for passivating a carbon-based hard mask, for example, of hydrogenated amorphous carbon, overlying an oxide dielectric which is to be later etched according to the pattern of the hard mask. After the hard mask is photo lithographically etched, it is exposed to a plasma of a hydrogen-containing reducing gas, preferably hydrogen gas, and a fluorocarbon gas, preferably trifluoromethane. The substrate can then be exposed to air without the moisture condensing in the etched apertures of the hard mask.
摘要翻译：钝化覆盖氧化物电介质的碳氢化硬掩模（例如氢化无定形碳）的方法，该氧化物电介质将根据硬掩模的图案而被蚀刻。在硬掩模被光刻蚀刻之后，将其暴露于含氢还原气体，优选氢气和碳氟化合物气体，优选三氟甲烷的等离子体。然后可以将衬底暴露于空气，而不会在硬掩模的蚀刻孔中凝结水分。

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