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1. 发明申请

US20080169469A1 Display device 有权
标题翻译：显示设备
公开(公告)号：US20080169469A1
公开(公告)日：2008-07-17
申请号：US12003462
申请日：2007-12-26
申请人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Yoshiaki Toyota
发明人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Yoshiaki Toyota
IPC分类号： H01L29/04
CPC分类号： H01L27/127 , H01L27/12 , H01L27/1225 , H01L27/124 , H01L29/7869
摘要： A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.
摘要翻译：提供了一种用于提高像素的开口率的显示装置。在显示装置中，透明氧化物层，绝缘膜和导电层依次层叠在基板上的像素区域上，导电层具有与栅极信号线连接的薄膜晶体管的栅电极，透明氧化物层的除了栅电极正下方的沟道区域以外的透明氧化物层的区域被转换为导电区域，源极信号线，连接到源极信号线的薄膜晶体管的源极区域部分像素电极和连接到像素电极的薄膜晶体管的漏区部分由导电区域形成。

2. 发明授权

US08242505B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08242505B2
公开(公告)日：2012-08-14
申请号：US12003462
申请日：2007-12-26
申请人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Yoshiaki Toyota
发明人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Yoshiaki Toyota
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L27/127 , H01L27/12 , H01L27/1225 , H01L27/124 , H01L29/7869
摘要： A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.
摘要翻译：提供了一种用于提高像素的开口率的显示装置。在显示装置中，透明氧化物层，绝缘膜和导电层依次层叠在基板上的像素区域上，导电层具有与栅极信号线连接的薄膜晶体管的栅电极，透明氧化物层的除了栅电极正下方的沟道区域以外的透明氧化物层的区域被转换为导电区域，源极信号线，连接到源极信号线的薄膜晶体管的源极区域部分像素电极和连接到像素电极的薄膜晶体管的漏区部分由导电区域形成。

3. 发明授权

US08629451B2 Display device 有权
公开(公告)号：US08629451B2
公开(公告)日：2014-01-14
申请号：US13537462
申请日：2012-06-29
申请人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Yoshiaki Toyota
发明人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Yoshiaki Toyota
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L27/127 , H01L27/12 , H01L27/1225 , H01L27/124 , H01L29/7869
摘要： A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.

4. 发明申请

US20120261668A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20120261668A1
公开(公告)日：2012-10-18
申请号：US13537462
申请日：2012-06-29
申请人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Yoshiaki Toyota
发明人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Yoshiaki Toyota
IPC分类号： H01L33/08
CPC分类号： H01L27/127 , H01L27/12 , H01L27/1225 , H01L27/124 , H01L29/7869
摘要： A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.
摘要翻译：提供了一种用于提高像素的开口率的显示装置。在显示装置中，透明氧化物层，绝缘膜和导电层依次层叠在基板上的像素区域上，导电层具有与栅极信号线连接的薄膜晶体管的栅电极，透明氧化物层的除了栅电极正下方的沟道区域以外的透明氧化物层的区域被转换为导电区域，源极信号线，连接到源极信号线的薄膜晶体管的源极区域部分像素电极和连接到像素电极的薄膜晶体管的漏区部分由导电区域形成。

5. 发明申请

US20080093602A1 IMAGE DISPLAY UNIT AND METHOD FOR MANUFACUTRE THE SAME 有权
标题翻译：图像显示单元及其制造方法
公开(公告)号：US20080093602A1
公开(公告)日：2008-04-24
申请号：US11874955
申请日：2007-10-19
申请人： Mieko Matsumura , Yoshiaki Toyota , Takeshi Sato , Mutsuko Hatano
发明人： Mieko Matsumura , Yoshiaki Toyota , Takeshi Sato , Mutsuko Hatano
IPC分类号： H01L33/00
CPC分类号： H01L29/4908 , G09G3/3233 , G09G2300/0842 , G09G2300/0861 , H01L27/124 , H01L27/1255 , H01L27/3244 , H01L29/41733 , H01L51/56
摘要： The present invention provides an image display unit, which can be manufactured in shorter time by designing a thin-film transistor, by which it is possible to reduce the number of processes of ion implantation and photolithographic processes. A gate electrode GT is designed in a laminated structure of a thin bottom layer metal film GMB and a top layer metal film GMT, and a top electrode of a storage capacitor Cst is designed to have only the bottom layer metal film GMB. Ion implanter for the bottom electrode of the storage capacitor Cst is passed through the thin bottom layer metal film GMB, and ion implantation is performed at the same time as the ion implantation of source-drain electrodes. The gate electrode of PMOSTFT has also only the bottom layer metal GMB, and the ion implantation for threshold adjustment is performed by using the same resist. By designing the thin-film transistor and the storage capacitor in such structure, one process each can be reduced in the photolithographic process and in the ion implantation process, and an active matrix substrate for an image display unit can be manufactured in shorter time and at lower cost.
摘要翻译：本发明提供了一种图像显示单元，其可以通过设计薄膜晶体管在较短时间内制造，由此可以减少离子注入和光刻工艺的处理次数。栅电极GT被设计成薄底层金属膜GMB和顶层金属膜GMT的层叠结构，并且存储电容器Cst的顶电极被设计为仅具有底层金属膜GMB。用于存储电容器Cst的底部电极的离子注入机通过薄的底层金属膜GMB，并且在与源极 - 漏极电极的离子注入同时进行离子注入。 PMOSTFT的栅极也仅具有底层金属GMB，并且通过使用相同的抗蚀剂来执行用于阈值调整的离子注入。通过在这种结构中设计薄膜晶体管和存储电容器，可以在光刻工艺和离子注入工艺中减少一个工艺，并且可以在更短的时间和更短的时间内制造用于图像显示单元的有源矩阵基板降低成本。

6. 发明授权

US08482003B2 Image display unit 有权
标题翻译：图像显示单元
公开(公告)号：US08482003B2
公开(公告)日：2013-07-09
申请号：US11874955
申请日：2007-10-19
申请人： Mieko Matsumura , Yoshiaki Toyota , Takeshi Sato , Mutsuko Hatano
发明人： Mieko Matsumura , Yoshiaki Toyota , Takeshi Sato , Mutsuko Hatano
IPC分类号： H01L31/00
CPC分类号： H01L29/4908 , G09G3/3233 , G09G2300/0842 , G09G2300/0861 , H01L27/124 , H01L27/1255 , H01L27/3244 , H01L29/41733 , H01L51/56
摘要： An image display unit is provided for which it is possible to reduce the number of ion plantation and photolithographic processes required to manufacture the device. A gate electrode GT is a laminated structure of a thin bottom layer metal film GMB and a top layer metal film GMT. A top electrode of a storage capacitor Cst is formed of the bottom layer metal film GMB and ion implantation for the top electrode is performed at the same time as the ion implantation of source-drain electrodes. The gate electrode of a PMOSTFT of the device is also formed with the bottom layer metal GMB, and the ion implantation for threshold adjustment is performed by using the same resist.
摘要翻译：提供了一种图像显示单元，可以减少制造装置所需的离子种植和光刻工艺的数量。栅电极GT是薄底层金属膜GMB和顶层金属膜GMT的层叠结构。存储电容器Cst的顶部电极由底层金属膜GMB形成，并且与源极 - 漏极电极的离子注入同时进行用于顶部电极的离子注入。器件的PMOSTFT的栅极也由底层金属GMB形成，并且通过使用相同的抗蚀剂来执行用于阈值调整的离子注入。

7. 发明授权

US07335915B2 Image displaying device and method for manufacturing same 有权
标题翻译：图像显示装置及其制造方法
公开(公告)号：US07335915B2
公开(公告)日：2008-02-26
申请号：US11585967
申请日：2006-10-25
申请人： Yoshiaki Toyota , Mutsuko Hatano
发明人： Yoshiaki Toyota , Mutsuko Hatano
IPC分类号： H01L29/04
CPC分类号： H01L27/12 , H01L27/1248
摘要： A technique for improving the manufacturing yield of an image displaying device is disclosed. A fabrication method of the image displaying device includes the steps of forming on an insulative substrate a plurality of island-like semiconductor layers, forming a gate insulating film on the island-like semiconductor layers, defining more than one contact hole in the gate insulating film, forming a gate electrode on the gate insulator film for causing the island-like semiconductor layer to be in contact with the gate insulator film, forming a source region, a drain region and a channel region interposed therebetween in the island-like semiconductor layer, forming an interlayer dielectric (ILD) film on the gate electrode, forming source/drain electrodes contacted with the source and drain regions and the ILD film, defining a through-hole(s) after formation of the source/drain electrodes, and removing a contact portion of the island-like semiconductor layer and gate electrode.
摘要翻译：公开了一种提高图像显示装置的制造成品率的技术。图像显示装置的制造方法包括以下步骤：在绝缘基板上形成多个岛状半导体层，在岛状半导体层上形成栅极绝缘膜，在栅极绝缘膜中限定多于一个的接触孔在所述栅极绝缘膜上形成用于使所述岛状半导体层与所述栅极绝缘膜接触的栅电极，在所述岛状半导体层中形成源极区域，漏极区域和沟道区域，在栅电极上形成层间电介质（ILD）膜，形成与源极和漏极区域接触的源/漏电极和ILD膜，在形成源极/漏极之后限定通孔，并且去除岛状半导体层和栅电极的接触部分。

8. 发明申请

US20070096209A1 Image displaying device and method for manufacturing same 有权
标题翻译：图像显示装置及其制造方法
公开(公告)号：US20070096209A1
公开(公告)日：2007-05-03
申请号：US11585967
申请日：2006-10-25
申请人： Yoshiaki Toyota , Mutsuko Hatano
发明人： Yoshiaki Toyota , Mutsuko Hatano
IPC分类号： H01L27/12 , H01L27/01 , H01L21/84 , H01L21/00 , H01L31/0392
CPC分类号： H01L27/12 , H01L27/1248
摘要： A technique for improving the manufacturing yield of an image displaying device is disclosed. A fabrication method of the image displaying device includes the steps of forming on an insulative substrate a plurality of island-like semiconductor layers, forming a gate insulating film on the island-like semiconductor layers, defining more than one contact hole in the gate insulating film, forming a gate electrode on the gate insulator film for causing the island-like semiconductor layer to be in contact with the gate insulator film, forming a source region, a drain region and a channel region interposed therebetween in the island-like semiconductor layer, forming an interlayer dielectric (ILD) film on the gate electrode, forming source/drain electrodes contacted with the source and drain regions and the ILD film, defining a through-hole(s) after formation of the source/drain electrodes, and removing a contact portion of the island-like semiconductor layer and gate electrode.
摘要翻译：公开了一种提高图像显示装置的制造成品率的技术。图像显示装置的制造方法包括以下步骤：在绝缘基板上形成多个岛状半导体层，在岛状半导体层上形成栅极绝缘膜，在栅极绝缘膜中限定多于一个的接触孔在所述栅极绝缘膜上形成用于使所述岛状半导体层与所述栅极绝缘膜接触的栅电极，在所述岛状半导体层中形成源极区域，漏极区域和沟道区域，在栅电极上形成层间电介质（ILD）膜，形成与源极和漏极区域接触的源/漏电极和ILD膜，在形成源/漏电极之后限定出一个或多个通孔，岛状半导体层和栅电极的接触部分。

9. 发明授权

US08258024B2 Display device and method of manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08258024B2
公开(公告)日：2012-09-04
申请号：US12606284
申请日：2009-10-27
申请人： Mieko Matsumura , Mutsuko Hatano , Yoshiaki Toyota , Takuo Kaitoh
发明人： Mieko Matsumura , Mutsuko Hatano , Yoshiaki Toyota , Takuo Kaitoh
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/3262 , H01L29/04 , H01L29/78696
摘要： The display device having a thin film transistor formed on a substrate including a display portion is provided. The thin film transistor including: a gate electrode; a gate insulating film formed so as to cover the gate electrode; a semiconductor laminated film formed on top the gate insulating film so as to extend over the gate electrode, the semiconductor laminated film being formed by laminating at least a polycrystalline semiconductor film and an amorphous semiconductor film, a first electrode and a second electrode disposed on top of the semiconductor laminated film so as to be opposed to each other across a region superposing the gate electrode. In the display device, the semiconductor laminated film is formed immediately below a wiring extending from the first electrode and immediately below a wiring extending from the second electrode.
摘要翻译：提供具有形成在包括显示部分的基板上的薄膜晶体管的显示装置。该薄膜晶体管包括：栅电极; 形成为覆盖所述栅电极的栅极绝缘膜; 半导体层叠膜，形成在所述栅极绝缘膜的顶部上，以在所述栅极上延伸，所述半导体层叠膜通过层叠至少多晶半导体膜和非晶半导体膜，第一电极和设置在顶部的第二电极而形成的半导体层叠膜，以跨越叠加栅电极的区域彼此相对。在显示装置中，半导体层叠膜形成在从第一电极延伸的布线的正下方并且紧接在从第二电极延伸的布线的下方。

10. 发明授权

US07550772B2 Image display device and manufacturing method thereof 有权
标题翻译：图像显示装置及其制造方法
公开(公告)号：US07550772B2
公开(公告)日：2009-06-23
申请号：US11741272
申请日：2007-04-27
申请人： Yoshiaki Toyota , Takeshi Sato , Mieko Matsumura
发明人： Yoshiaki Toyota , Takeshi Sato , Mieko Matsumura
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L27/1288 , H01L27/124 , H01L27/1255 , H01L27/326 , H01L27/3276 , H01L29/4908 , H01L2227/323
摘要： An image display device of reduced cost is provided. A plurality of gate lines, a plurality of signal lines formed to cross the gate lines in a matrix fashion, and a plurality of thin-film transistors are formed on an insulating substrate, and the plurality of gate lines are laminated electrodes. The plurality of thin-film transistors are configured of transistors of two types of an n-channel conductivity type and a p-channel conductivity type. Gate electrodes of thin-film transistors of one type are laminated electrodes of the same configuration as the gate lines, and gate electrodes of thin-film transistors of the other type are configured of electrodes of the same layer as bottom electrodes of the gate lines.
摘要翻译：提供了一种降低成本的图像显示装置。多个栅极线，以矩阵方式与栅极线交叉的多个信号线和多个薄膜晶体管形成在绝缘基板上，并且多个栅极线是叠层电极。多个薄膜晶体管由n沟道导电型和p沟道导电型两种晶体管构成。一种类型的薄膜晶体管的栅电极是与栅极线相同结构的层叠电极，另一种类型的薄膜晶体管的栅电极由与栅极线的底电极相同的层的电极构成。

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