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1. 发明申请

US20210148378A1 ANTI-PRESS FAN STRUCTURE 有权
公开(公告)号：US20210148378A1
公开(公告)日：2021-05-20
申请号：US16686216
申请日：2019-11-18
申请人： Te-Chung Wang , Ming-Che Lee , Min-Sheng Cheng , Tien-Lung Yu
发明人： Te-Chung Wang , Ming-Che Lee , Min-Sheng Cheng , Tien-Lung Yu
IPC分类号： F04D29/42 , F04D29/28 , F04D29/059
摘要： An anti-press fan structure includes a fan frame and a fan impeller. The fan impeller has a support shaft supporting the fan impeller disposed in the fan frame. The support shaft has a protrusion section protruding from the fan frame to bear and connect with an external unit positioned above the fan impeller so as to keep an axial space between the fan impeller and the external unit. Accordingly, the fan impeller is prevented from being compressed by the external unit and the pressure applied to the fan frame is dispersed.

2. 发明申请

US20120241752A1 LOW CONTACT RESISTANCE SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：低接触电阻半导体结构及其制造方法
公开(公告)号：US20120241752A1
公开(公告)日：2012-09-27
申请号：US13301298
申请日：2011-11-21
申请人： Te-Chung Wang , Fu-Bang Chen , Hsiu-Mu Tang
发明人： Te-Chung Wang , Fu-Bang Chen , Hsiu-Mu Tang
IPC分类号： H01L33/30 , H01L33/42
CPC分类号： H01L33/42 , H01L33/38 , H01L2933/0016
摘要： A low contact resistance semiconductor structure includes a substrate, a semiconductor stacked layer, a low contact resistance layer and a transparent conductive layer. The low contact resistance layer is formed on one side of a P-type GaN layer of the semiconductor stacked layer. The low contact resistance layer is formed at a thickness smaller than 100 Angstroms and made of a material selected from the group consisting of aluminum, gallium, indium, and combinations thereof. Through the low contact resistance layer, the resistance between the P-type GaN layer and transparent conductive layer can be reduced and light emission efficiency can be improved when being used on LEDs. The method of fabricating the low contact resistance semiconductor structure of the invention forms a thin and consistent low contact resistance layer through a Metal Organic Chemical Vapor Deposition (MOCVD) method to enhance matching degree among various layers.
摘要翻译：低接触电阻半导体结构包括衬底，半导体堆叠层，低接触电阻层和透明导电层。低接触电阻层形成在半导体层叠层的P型GaN层的一侧。低接触电阻层形成厚度小于100埃，由选自铝，镓，铟及其组合的材料制成。通过低接触电阻层，可以降低P型GaN层和透明导电层之间的电阻，并且在用于LED时可以提高发光效率。本发明的低接触电阻半导体结构的制造方法通过金属有机化学气相沉积（MOCVD）方法形成薄且一致的低接触电阻层，以增强各层之间的匹配度。

3. 发明授权

US08071409B2 Fabrication method of light emitting diode 有权
标题翻译：发光二极管的制造方法
公开(公告)号：US08071409B2
公开(公告)日：2011-12-06
申请号：US12542703
申请日：2009-08-18
申请人： Te-Chung Wang , Chun-Jong Chang , Kun-Fu Huang
发明人： Te-Chung Wang , Chun-Jong Chang , Kun-Fu Huang
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/007 , Y10S438/962 , Y10S977/755
摘要： A fabrication method of light emitting diode is provided. A first type doped semiconductor layer is formed on a substrate. Subsequently, a light emitting layer is formed on the first type doped semiconductor layer. A process for forming the light emitting layer includes alternately forming a plurality of barrier layers and a plurality of quantum well layers on the first type doped semiconductor layer. The quantum well layers are formed at a growth temperature T1, and the barrier layers are formed at a growth temperature T2, where T1
摘要翻译：提供了一种发光二极管的制造方法。在基板上形成第一种类型的掺杂半导体层。随后，在第一种掺杂半导体层上形成发光层。形成发光层的工艺包括在第一掺杂半导体层上交替地形成多个势垒层和多个量子阱层。量子阱层以生长温度T1形成，并且阻挡层以T1

4. 发明授权

US08659029B2 Low contact resistance semiconductor structure and method of fabricating the same 有权
标题翻译：低接触电阻半导体结构及其制造方法
公开(公告)号：US08659029B2
公开(公告)日：2014-02-25
申请号：US13301298
申请日：2011-11-21
申请人： Te-Chung Wang , Fu-Bang Chen , Hsiu-Mu Tang
发明人： Te-Chung Wang , Fu-Bang Chen , Hsiu-Mu Tang
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/38 , H01L2933/0016
摘要： A low contact resistance semiconductor structure includes a substrate, a semiconductor stacked layer, a low contact resistance layer and a transparent conductive layer. The low contact resistance layer is formed on one side of a P-type GaN layer of the semiconductor stacked layer. The low contact resistance layer is formed at a thickness smaller than 100 Angstroms and made of a material selected from the group consisting of aluminum, gallium, indium, and combinations thereof. Through the low contact resistance layer, the resistance between the P-type GaN layer and transparent conductive layer can be reduced and light emission efficiency can be improved when being used on LEDs. The method of fabricating the low contact resistance semiconductor structure of the invention forms a thin and consistent low contact resistance layer through a Metal Organic Chemical Vapor Deposition (MOCVD) method to enhance matching degree among various layers.
摘要翻译：低接触电阻半导体结构包括衬底，半导体堆叠层，低接触电阻层和透明导电层。低接触电阻层形成在半导体层叠层的P型GaN层的一侧。低接触电阻层形成厚度小于100埃，由选自铝，镓，铟及其组合的材料制成。通过低接触电阻层，可以降低P型GaN层和透明导电层之间的电阻，并且在用于LED时可以提高发光效率。本发明的低接触电阻半导体结构的制造方法通过金属有机化学气相沉积（MOCVD）方法形成薄且一致的低接触电阻层，以增强各层之间的匹配度。

5. 发明申请

US20100221494A1 METHOD FOR FORMING SEMICONDUCTOR LAYER 审中-公开
标题翻译：形成半导体层的方法
公开(公告)号：US20100221494A1
公开(公告)日：2010-09-02
申请号：US12465655
申请日：2009-05-14
申请人： Chang-Ming Lu , Chih-Wei Chao , Te-Chung Wang , Kuo-Lung Fang , Chun-Jong Chang
发明人： Chang-Ming Lu , Chih-Wei Chao , Te-Chung Wang , Kuo-Lung Fang , Chun-Jong Chang
IPC分类号： B32B3/00 , H01L21/20
CPC分类号： H01L21/02647 , C30B25/02 , C30B29/406 , H01L21/0237 , H01L21/02433 , H01L21/02639 , Y10T428/24479
摘要： A method for forming a semiconductor layer includes following steps. First, an epitaxial substrate having at least a first growth region and at least a second growth region is provided. An area ratio of C plane to R plane in the first growth region is greater than 52/48. An epitaxial process is then performed on the epitaxial substrate to form a semiconductor layer. During the epitaxial process, a semiconductor material is selectively grown on the first growth region, and then the semiconductor material is laterally overgrown on the second growth region and covers the same.
摘要翻译：形成半导体层的方法包括以下步骤。首先，提供具有至少第一生长区和至少第二生长区的外延衬底。第一生长区域中C面与R面的面积比大于52/48。然后在外延衬底上进行外延工艺以形成半导体层。在外延工艺期间，半导体材料选择性地生长在第一生长区域上，然后半导体材料在第二生长区域上横向长满而覆盖。

6. 发明申请

US20060145169A1 Light emitting diode 审中-公开
标题翻译：发光二极管
公开(公告)号：US20060145169A1
公开(公告)日：2006-07-06
申请号：US11155774
申请日：2005-06-20
申请人： Te-Chung Wang , Chang-cheng Chuo , Jung-Chieh Su , Ching-En Tsai , Cheng-Hong Lee
发明人： Te-Chung Wang , Chang-cheng Chuo , Jung-Chieh Su , Ching-En Tsai , Cheng-Hong Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/504 , B82Y10/00 , H01L33/32
摘要： A light emitting diode (LED) is added aluminum atom in every layer of InGaN light emitting diode to emit a UV light with wavelength between 300 nm and 380 nm which is not able to see by humans. This LED can co-operate with different colors of luminescent material layer or quantum well/quantum dot structures to emit different color (wavelength) of light, which are different colors (wavelengths) of LED.
摘要翻译：发光二极管（LED）在InGaN发光二极管的每层中加入铝原子，以发射波长在300nm和380nm之间的紫外线，这是人类无法看到的。该LED可以与不同颜色的发光材料层或量子阱/量子点结构配合以发射不同颜色（波长）的光，其是LED的不同颜色（波长）。

7. 发明申请

US20060145137A1 Quantum dot/quantum well Light Emitting Diode 有权
标题翻译：量子点/量子阱发光二极管
公开(公告)号：US20060145137A1
公开(公告)日：2006-07-06
申请号：US11320654
申请日：2005-12-30
申请人： Te-Chung Wang , Jung-Tsung Hsu , Chang-Cheng Chuo , Ching-En Tsai , Chih-Ming Lai
发明人： Te-Chung Wang , Jung-Tsung Hsu , Chang-Cheng Chuo , Ching-En Tsai , Chih-Ming Lai
IPC分类号： H01L31/109 , H01L21/00
CPC分类号： H01L33/08 , B82Y10/00 , H01L33/06 , H01L33/502 , Y10S362/80
摘要： A quantum dot/quantum well light emitting diode (LED) is provided with a LED at one side of a substrate, and a second light emitting layer and a third light emitting layer at the other side of the substrate. When a proper forward bias is applied to the LED to emit a first light by the first light emitting layer, the first light is used to excite the second light emitting layer and the third light emitting layer to generate the second light output and the third light output of different colors respectively. Then, the light output of a desired color can be generated by mixing the first light, the second light and the third light.
摘要翻译：量子点/量子阱发光二极管（LED）在衬底的一侧设置有LED，在衬底的另一侧设置有第二发光层和第三发光层。当向LED发出适当的正向偏压以通过第一发光层发射第一光时，第一光用于激发第二发光层和第三发光层以产生第二光输出，并且第三光输出不同颜色。然后，可以通过混合第一光，第二光和第三光来产生所需颜色的光输出。

8. 发明申请

US20170260994A1 FAN IMPELLER STRUCTURE OF COOLING FAN 审中-公开
公开(公告)号：US20170260994A1
公开(公告)日：2017-09-14
申请号：US15063518
申请日：2016-03-08
申请人： Liang-Hua Xu , Te-Chung Wang
发明人： Liang-Hua Xu , Te-Chung Wang
IPC分类号： F04D29/28 , F04D29/62 , F04D25/08
CPC分类号： F04D29/281 , F04D25/0606 , F04D25/08 , F04D29/282 , F04D29/624 , F04D29/626
摘要： A fan impeller structure of cooling fan includes a blade assembly and a hub. The blade assembly has multiple blades and an annular cover body. The annular cover body is integrally formed on the rear ends of the blades by injection molding to enclose and connect with the rear ends of the blades. Alternatively, the annular cover body is fused and integrally connected with the rear ends of the blades by means of laser welding. The blade assembly and the hub are integrally connected with each other to form the fan impeller structure.

9. 发明申请

US20110210343A1 SEMICONDUCTOR WAFER 审中-公开
公开(公告)号：US20110210343A1
公开(公告)日：2011-09-01
申请号：US12859825
申请日：2010-08-20
申请人： Fu-Bang CHEN , Kuo-Lung Fang , Kun-Fu Huang , Te-Chung Wang
发明人： Fu-Bang CHEN , Kuo-Lung Fang , Kun-Fu Huang , Te-Chung Wang
IPC分类号： H01L33/00 , H01L23/00
CPC分类号： H01L33/12 , H01L33/007 , H01L33/20
摘要： A semiconductor wafer includes a substrate, a first separating structure and a semiconductor stacked layer structure. The substrate has a first surface. The first separating structure is formed on the first surface to divide the first surface into a plurality of independent regions. The minimum area of each of the regions is more than or equal to one square inch. The semiconductor stacked layer structure is disposed on the first surface and the first separating structure. The semiconductor wafer can prevent bowing of the semiconductor wafer during an epitaxial growth process so as to enhance quality of the semiconductor wafer.
摘要翻译：半导体晶片包括基板，第一分离结构和半导体叠层结构。衬底具有第一表面。第一分离结构形成在第一表面上以将第一表面分成多个独立区域。每个区域的最小面积大于或等于1平方英寸。半导体堆叠层结构设置在第一表面和第一分离结构上。半导体晶片可以在外延生长工艺期间防止半导体晶片弯曲，从而提高半导体晶片的质量。

10. 发明申请

US20100285626A1 FABRICATION METHOD OF LIGHT EMITTING DIODE 有权
标题翻译：发光二极管的制造方法
公开(公告)号：US20100285626A1
公开(公告)日：2010-11-11
申请号：US12542703
申请日：2009-08-18
申请人： Te-Chung Wang , Chun-Jong Chang , Kun-Fu Huang
发明人： Te-Chung Wang , Chun-Jong Chang , Kun-Fu Huang
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , Y10S438/962 , Y10S977/755
摘要： A fabrication method of light emitting diode is provided. A first type doped semiconductor layer is formed on a substrate. Subsequently, a light emitting layer is formed on the first type doped semiconductor layer. A process for forming the light emitting layer includes alternately forming a plurality of barrier layers and a plurality of quantum well layers on the first type doped semiconductor layer. The quantum well layers are formed at a growth temperature T1, and the barrier layers are formed at a growth temperature T2, where T1
摘要翻译：提供了一种发光二极管的制造方法。在基板上形成第一种类型的掺杂半导体层。随后，在第一种掺杂半导体层上形成发光层。形成发光层的工艺包括在第一掺杂半导体层上交替地形成多个势垒层和多个量子阱层。量子阱层以生长温度T1形成，并且阻挡层以T1

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