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1. 发明授权

US08659029B2 Low contact resistance semiconductor structure and method of fabricating the same 有权
标题翻译：低接触电阻半导体结构及其制造方法
公开(公告)号：US08659029B2
公开(公告)日：2014-02-25
申请号：US13301298
申请日：2011-11-21
申请人： Te-Chung Wang , Fu-Bang Chen , Hsiu-Mu Tang
发明人： Te-Chung Wang , Fu-Bang Chen , Hsiu-Mu Tang
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/38 , H01L2933/0016
摘要： A low contact resistance semiconductor structure includes a substrate, a semiconductor stacked layer, a low contact resistance layer and a transparent conductive layer. The low contact resistance layer is formed on one side of a P-type GaN layer of the semiconductor stacked layer. The low contact resistance layer is formed at a thickness smaller than 100 Angstroms and made of a material selected from the group consisting of aluminum, gallium, indium, and combinations thereof. Through the low contact resistance layer, the resistance between the P-type GaN layer and transparent conductive layer can be reduced and light emission efficiency can be improved when being used on LEDs. The method of fabricating the low contact resistance semiconductor structure of the invention forms a thin and consistent low contact resistance layer through a Metal Organic Chemical Vapor Deposition (MOCVD) method to enhance matching degree among various layers.
摘要翻译：低接触电阻半导体结构包括衬底，半导体堆叠层，低接触电阻层和透明导电层。低接触电阻层形成在半导体层叠层的P型GaN层的一侧。低接触电阻层形成厚度小于100埃，由选自铝，镓，铟及其组合的材料制成。通过低接触电阻层，可以降低P型GaN层和透明导电层之间的电阻，并且在用于LED时可以提高发光效率。本发明的低接触电阻半导体结构的制造方法通过金属有机化学气相沉积（MOCVD）方法形成薄且一致的低接触电阻层，以增强各层之间的匹配度。

2. 发明申请

US20120241752A1 LOW CONTACT RESISTANCE SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：低接触电阻半导体结构及其制造方法
公开(公告)号：US20120241752A1
公开(公告)日：2012-09-27
申请号：US13301298
申请日：2011-11-21
申请人： Te-Chung Wang , Fu-Bang Chen , Hsiu-Mu Tang
发明人： Te-Chung Wang , Fu-Bang Chen , Hsiu-Mu Tang
IPC分类号： H01L33/30 , H01L33/42
CPC分类号： H01L33/42 , H01L33/38 , H01L2933/0016
摘要： A low contact resistance semiconductor structure includes a substrate, a semiconductor stacked layer, a low contact resistance layer and a transparent conductive layer. The low contact resistance layer is formed on one side of a P-type GaN layer of the semiconductor stacked layer. The low contact resistance layer is formed at a thickness smaller than 100 Angstroms and made of a material selected from the group consisting of aluminum, gallium, indium, and combinations thereof. Through the low contact resistance layer, the resistance between the P-type GaN layer and transparent conductive layer can be reduced and light emission efficiency can be improved when being used on LEDs. The method of fabricating the low contact resistance semiconductor structure of the invention forms a thin and consistent low contact resistance layer through a Metal Organic Chemical Vapor Deposition (MOCVD) method to enhance matching degree among various layers.
摘要翻译：低接触电阻半导体结构包括衬底，半导体堆叠层，低接触电阻层和透明导电层。低接触电阻层形成在半导体层叠层的P型GaN层的一侧。低接触电阻层形成厚度小于100埃，由选自铝，镓，铟及其组合的材料制成。通过低接触电阻层，可以降低P型GaN层和透明导电层之间的电阻，并且在用于LED时可以提高发光效率。本发明的低接触电阻半导体结构的制造方法通过金属有机化学气相沉积（MOCVD）方法形成薄且一致的低接触电阻层，以增强各层之间的匹配度。

3. 发明授权

US09263641B2 Light emitting diodes 有权
标题翻译：发光二极管
公开(公告)号：US09263641B2
公开(公告)日：2016-02-16
申请号：US13464544
申请日：2012-05-04
申请人： Wei-chun Tseng , Wei-Yu Yen , Fu-Bang Chen , Chih-Sung Chang
发明人： Wei-chun Tseng , Wei-Yu Yen , Fu-Bang Chen , Chih-Sung Chang
IPC分类号： H01L33/38 , H01L33/40 , H01L33/22 , H01L33/32
CPC分类号： H01L33/40 , H01L33/22 , H01L33/32 , H01L33/382
摘要： An electric contact structure adopted for an LED comprises a nitride middle layer and an N-type metal electrode layer. The LED includes an N-type semiconductor layer, a light emission layer and a P-type semiconductor layer that are stacked to form a sandwich structure. The nitride middle layer is patterned and formed on the N-type semiconductor layer. The N-type metal electrode layer is formed on the nitride middle layer and prevented from being damaged by diffusion of the metal ions as the nitride middle layer serves as a blocking interface, thus electric property of the N-type semiconductor layer can be maintained stable. The nitride middle layer would not be softened and condensed due to long-term high temperature, thereby is enhanced adhesion. Moreover, the N-type metal electrode layer further can be prevented from peeling off, hence is increased the lifespan of the LED.
摘要翻译：用于LED的电接触结构包括氮化物中间层和N型金属电极层。 LED包括层叠以形成夹层结构的N型半导体层，发光层和P型半导体层。氮化物中间层被图案化并形成在N型半导体层上。 N型金属电极层形成在氮化物中间层上，并且由于氮化物中间层用作阻挡界面，因此防止金属离子的扩散而损坏，因此可以保持N型半导体层的电性能。氮化物中间层由于长期高温而不会软化和冷凝，从而增强了粘附力。此外，还可以防止N型金属电极层剥离，从而增加LED的寿命。

4. 发明申请

US20140073075A1 METHOD FOR SEPARATING LIGHT-EMITTING DIODE FROM A SUBSTRATE 有权
标题翻译：从基板分离发光二极管的方法
公开(公告)号：US20140073075A1
公开(公告)日：2014-03-13
申请号：US13611951
申请日：2012-09-12
申请人： Wei-Yu YEN , Fu-Bang Chen , Chih-Sung Chang
发明人： Wei-Yu YEN , Fu-Bang Chen , Chih-Sung Chang
IPC分类号： H01L33/48
CPC分类号： H01L33/0079
摘要： A method for separating a light-emitting diode (LED) from a substrate comprises the following steps. First, a substrate is provided which includes a junction surface and a bottom surface far away from the junction surface. Then a plurality holes are formed on the junction surface. An LED structure is further grown on the junction surface, and includes a junction portion bonded to the junction surface. The bottom surface is then polished to be shrunk to communicate with the holes. Finally, the junction portion is etched by an etching liquid via the holes to separate the LED structure from the substrate. Accordingly, by forming the holes, the LED structure and the substrate can be separated through polishing and etching processes, thereby providing a high yield rate as well as reduced production costs.
摘要翻译：从基板分离发光二极管（LED）的方法包括以下步骤。首先，提供一种衬底，其包括接合面和远离接合面的底面。然后在接合面上形成多个孔。在结表面上进一步生长LED结构，并且包括结合到接合面的接合部分。然后将底面抛光以收缩以与孔连通。最后，通过蚀刻液通过孔蚀刻接合部分，以将LED结构与衬底分离。因此，通过形成孔，可以通过研磨和蚀刻工艺分离LED结构和基板，从而提供高产率并降低生产成本。

5. 发明申请

US20140061695A1 LIGHT-EMITTING DIODE WITH A MIRROR PROTECTION LAYER 有权
标题翻译：具有镜子保护层的发光二极管
公开(公告)号：US20140061695A1
公开(公告)日：2014-03-06
申请号：US13601161
申请日：2012-08-31
申请人： WEI-YU YEN , Li-Ping Chou , Fu-Bang Chen , Chih-Sung Chang
发明人： WEI-YU YEN , Li-Ping Chou , Fu-Bang Chen , Chih-Sung Chang
IPC分类号： H01L33/60
CPC分类号： H01L33/0079 , H01L33/32 , H01L33/405 , H01L33/44
摘要： A light-emitting diode (LED) with a mirror protection layer includes sequentially stacked an N-type electrode, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a metal mirror layer, a protection layer, a buffer layer, a binding layer, a permanent substrate, and a P-type electrode. The protection layer is made of metal oxide, and has a hollow frame for covering or supporting edges of the metal mirror layer. Accordingly, the metal mirror layer can be protected by the protection layer to prevent from oxidation in subsequent processes and to prevent metal deterioration during high-current operations. Thus the metal mirror layer can maintain high reflectivity, thereby increasing light extraction efficiency and electrical stability of the LED.
摘要翻译：具有镜面保护层的发光二极管（LED）包括依次层叠N型电极，N型半导体层，发光层，P型半导体层，金属镜面层，保护层，缓冲层，结合层，永久性基板和P型电极。保护层由金属氧化物制成，并且具有用于覆盖或支撑金属镜面层的边缘的中空框架。因此，可以通过保护层保护金属镜层，防止后续工序中的氧化，防止高电流操作时的金属劣化。因此，金属镜层可以保持高反射率，从而提高LED的光提取效率和电稳定性。

6. 发明申请

US20130292734A1 ELECTRIC CONTACT STRUCTURE FOR LIGHT EMITTING DIODES 有权
标题翻译：用于发光二极管的电接触结构
公开(公告)号：US20130292734A1
公开(公告)日：2013-11-07
申请号：US13464544
申请日：2012-05-04
申请人： Wei-chun TSENG , Wei-Yu Yen , Fu-Bang Chen , Chih-Sung Chang
发明人： Wei-chun TSENG , Wei-Yu Yen , Fu-Bang Chen , Chih-Sung Chang
IPC分类号： H01L33/38
CPC分类号： H01L33/40 , H01L33/22 , H01L33/32 , H01L33/382
摘要： An electric contact structure adopted for an LED comprises a nitride middle layer and an N-type metal electrode layer. The LED includes an N-type semiconductor layer, a light emission layer and a P-type semiconductor layer that are stacked to form a sandwich structure. The nitride middle layer is patterned and formed on the N-type semiconductor layer. The N-type metal electrode layer is formed on the nitride middle layer and prevented from being damaged by diffusion of the metal ions as the nitride middle layer serves as a blocking interface, thus electric property of the N-type semiconductor layer can be maintained stable. The nitride middle layer would not be softened and condensed due to long-term high temperature, thereby is enhanced adhesion. Moreover, the N-type metal electrode layer further can be prevented from peeling off, hence is increased the lifespan of the LED.
摘要翻译：用于LED的电接触结构包括氮化物中间层和N型金属电极层。 LED包括层叠以形成夹层结构的N型半导体层，发光层和P型半导体层。氮化物中间层被图案化并形成在N型半导体层上。 N型金属电极层形成在氮化物中间层上，并且由于氮化物中间层用作阻挡界面，因此防止金属离子的扩散而损坏，因此可以保持N型半导体层的电性能。氮化物中间层由于长期高温而不会软化和冷凝，从而增强了粘附力。此外，还可以防止N型金属电极层剥离，从而增加LED的寿命。

7. 发明授权

US09224911B2 Method for separating light-emitting diode from a substrate 有权
标题翻译：从基板分离发光二极管的方法
公开(公告)号：US09224911B2
公开(公告)日：2015-12-29
申请号：US13611951
申请日：2012-09-12
申请人： Wei-Yu Yen , Fu-Bang Chen , Chih-Sung Chang
发明人： Wei-Yu Yen , Fu-Bang Chen , Chih-Sung Chang
IPC分类号： H01L33/48 , H01L33/00
CPC分类号： H01L33/0079
摘要： A method for separating a light-emitting diode (LED) from a substrate comprises the following steps. First, a substrate is provided which includes a junction surface and a bottom surface far away from the junction surface. Then a plurality holes are formed on the junction surface. An LED structure is further grown on the junction surface, and includes a junction portion bonded to the junction surface. The bottom surface is then polished to be shrunk to communicate with the holes. Finally, the junction portion is etched by an etching liquid via the holes to separate the LED structure from the substrate. Accordingly, by forming the holes, the LED structure and the substrate can be separated through polishing and etching processes, thereby providing a high yield rate as well as reduced production costs.
摘要翻译：从基板分离发光二极管（LED）的方法包括以下步骤。首先，提供一种衬底，其包括接合面和远离接合面的底面。然后在接合面上形成多个孔。在结表面上进一步生长LED结构，并且包括结合到接合面的接合部分。然后将底面抛光以收缩以与孔连通。最后，通过蚀刻液通过孔蚀刻接合部分，以将LED结构与衬底分离。因此，通过形成孔，可以通过研磨和蚀刻工艺分离LED结构和基板，从而提供高产率并降低生产成本。

8. 发明授权

US08766303B2 Light-emitting diode with a mirror protection layer 有权
标题翻译：具有镜面保护层的发光二极管
公开(公告)号：US08766303B2
公开(公告)日：2014-07-01
申请号：US13601161
申请日：2012-08-31
申请人： Wei-Yu Yen , Li-Ping Chou , Fu-Bang Chen , Chih-Sung Chang
发明人： Wei-Yu Yen , Li-Ping Chou , Fu-Bang Chen , Chih-Sung Chang
IPC分类号： H01L33/60
CPC分类号： H01L33/0079 , H01L33/32 , H01L33/405 , H01L33/44
摘要： A light-emitting diode (LED) with a mirror protection layer includes sequentially stacked an N-type electrode, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a metal mirror layer, a protection layer, a buffer layer, a binding layer, a permanent substrate, and a P-type electrode. The protection layer is made of metal oxide, and has a hollow frame for covering or supporting edges of the metal mirror layer.
摘要翻译：具有镜面保护层的发光二极管（LED）包括依次层叠N型电极，N型半导体层，发光层，P型半导体层，金属镜面层，保护层，缓冲层，结合层，永久基板和P型电极。保护层由金属氧化物制成，并且具有用于覆盖或支撑金属镜面层的边缘的中空框架。

9. 发明申请

US20130161669A1 LIGHT-EMITTING DIODE WITH CURRENT DIFFUSION STRUCTURE AND A METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：具有电流扩散结构的发光二极管及其制造方法
公开(公告)号：US20130161669A1
公开(公告)日：2013-06-27
申请号：US13336720
申请日：2011-12-23
申请人： Fu-Bang Chen , Wei-Yu Yen , Chih-Sung Chang
发明人： Fu-Bang Chen , Wei-Yu Yen , Chih-Sung Chang
IPC分类号： H01L33/60 , H01L33/22
CPC分类号： H01L33/145 , H01L33/22
摘要： An LED with a current diffusion structure comprises an N-type semiconductor layer, a light emitting layer, a P-type semiconductor layer, an N-type electrode, a P-type electrode and a current blocking layer. The N-type semiconductor layer, light emitting layer and P-type semiconductor layer form a sandwich structure. The N-type and P-type electrodes are respectively arranged on the N-type and P-type semiconductor layers. The current blocking layer has the pattern of the N-type electrode and is embedded inside the N-type semiconductor layer. Thereby not only current generated by the N-type electrode detours the current blocking layer and uniformly passes through the light emitting layer, but also prevents interface effect to increase impedance. Thus is promoted lighting efficiency of LED. Further, as main light-emitting regions of the light emitting layer are far from the N-type electrode, light shielded by the N-type electrode is reduced and illumination of LED is thus enhanced.
摘要翻译：具有电流扩散结构的LED包括N型半导体层，发光层，P型半导体层，N型电极，P型电极和电流阻挡层。 N型半导体层，发光层和P型半导体层形成夹层结构。 N型和P型电极分别设置在N型和P型半导体层上。电流阻挡层具有N型电极的图案，并且嵌入在N型半导体层的内部。因此，不仅由N型电极产生的电流绕过电流阻挡层并均匀地通过发光层，而且防止了界面效应增加阻抗。从而提高了LED的照明效率。此外，随着发光层的主要发光区域远离N型电极，由N型电极屏蔽的光减少，因此LED的照明得到增强。

10. 发明申请

US20130313605A1 ELECTRODE CONTACT STRUCTURE OF LIGHT-EMITTING DIODE 审中-公开
标题翻译：发光二极管的电极接触结构
公开(公告)号：US20130313605A1
公开(公告)日：2013-11-28
申请号：US13478318
申请日：2012-05-23
申请人： Li-Ping Chou , Fu-Bang Chen , Chih-Sung Chang
发明人： Li-Ping Chou , Fu-Bang Chen , Chih-Sung Chang
IPC分类号： H01L33/40 , H01L33/22
CPC分类号： H01L33/22 , H01L33/38 , H01L33/40
摘要： A light-emitting diode (LED) electrode contact structure for an LED is provided. The LED includes a plurality of N-type electrodes, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a mirror layer, a buffer layer, a binding layer, a permanent substrate and a P-type electrode that are stacked in sequence. The N-type semiconductor layer has an irregular surface and a plurality of contact platforms. The contact platforms are formed and distributed on the N-type semiconductor layer in a patterned arrangement, and the irregular surface is formed at areas on the N-type semiconductor layer without the contact platforms. The N-type electrodes are respectively formed on the contact platforms. Through flat interfaces provided by the contact platforms, voids are not generated when the N-type electrodes are formed on the contact platforms. Therefore, satisfactory electrical contact is ensured to thereby increase light emitting efficiency.
摘要翻译：提供了一种用于LED的发光二极管（LED）电极接触结构。 LED包括多个N型电极，N型半导体层，发光层，P型半导体层，镜面层，缓冲层，结合层，永久性基板和P- 型电极。 N型半导体层具有不规则表面和多个接触平台。接触平台以图案化布置形成并分布在N型半导体层上，并且不规则表面形成在N型半导体层上的没有接触平台的区域。 N型电极分别形成在接触平台上。通过由接触平台提供的平坦界面，当在接触平台上形成N型电极时，不会产生空隙。因此，确保令人满意的电接触，从而提高发光效率。

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