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1. 发明授权

US09059704B2 Programmable logic device 有权
标题翻译：可编程逻辑器件
公开(公告)号：US09059704B2
公开(公告)日：2015-06-16
申请号：US13477192
申请日：2012-05-22
申请人： Seiichi Yoneda , Jun Koyama , Yutaka Shionoiri , Masami Endo , Hiroki Dembo , Tatsuji Nishijima , Hidetomo Kobayashi , Kazuaki Ohshima
发明人： Seiichi Yoneda , Jun Koyama , Yutaka Shionoiri , Masami Endo , Hiroki Dembo , Tatsuji Nishijima , Hidetomo Kobayashi , Kazuaki Ohshima
IPC分类号： G06F1/00 , H03K19/177 , H03K19/173 , G06F3/06
CPC分类号： H03K19/173 , G06F1/3243 , G06F3/0679 , H03K19/17772 , Y02D10/152
摘要： An object is to provide a programmable logic device configured to keep a connection state of logic circuits even while power supply voltage is stopped. The programmable logic device includes arithmetic circuits each of whose logic state can be changed; a configuration changing circuit changing the logic states of the arithmetic circuits; a power supply control circuit controlling supply of power supply voltage to the arithmetic circuits; a state memory circuit storing data on the logic states and data on states of the power supply voltage of the arithmetic circuits; and an arithmetic state control circuit controlling the configuration changing circuit and the power supply control circuit in accordance with the data stored in the state memory circuit. A transistor in which a channel formation region is formed in an oxide semiconductor layer is provided between the configuration changing circuit and each of the arithmetic circuits.
摘要翻译：目的是提供一种可编程逻辑器件，其被配置为即使在电源电压停止时仍保持逻辑电路的连接状态。可编程逻辑器件包括可以改变其逻辑状态的运算电路; 配置改变电路改变运算电路的逻辑状态; 电源控制电路，控制对所述运算电路的电源电压供给; 存储关于逻辑状态的数据的状态存储电路和关于运算电路的电源电压的状态的数据; 以及算术状态控制电路，根据存储在状态存储电路中的数据控制配置改变电路和电源控制电路。在配置改变电路和每个运算电路之间设置有在氧化物半导体层中形成沟道形成区的晶体管。

2. 发明授权

US08581625B2 Programmable logic device 有权
标题翻译：可编程逻辑器件
公开(公告)号：US08581625B2
公开(公告)日：2013-11-12
申请号：US13463084
申请日：2012-05-03
申请人： Seiichi Yoneda , Tatsuji Nishijima
发明人： Seiichi Yoneda , Tatsuji Nishijima
IPC分类号： H03K19/173
CPC分类号： H03K19/0013 , H01L27/1225 , H01L27/124 , H01L29/7869 , H03K19/0008 , H03K19/17736 , H03K19/17744
摘要： An object is to provide a programmable logic device having logic blocks connected to each other by a programmable switch, where the programmable switch is characterized by an oxide semiconductor transistor incorporated therein. The extremely low off-state current of the oxide semiconductor transistor provides a function as a non-volatile memory due to its high ability to hold a potential of a gate electrode of a transistor which is connected to the oxide semiconductor transistor. The ability of the oxide semiconductor transistor to function as a non-volatile memory allows the configuration data for controlling the connection of the logic blocks to be maintained even in the absence of a power supply potential. Hence, the rewriting process of the configuration data at starting of the device can be omitted, which contributes to the reduction in power consumption of the device.
摘要翻译：目的是提供一种具有通过可编程开关彼此连接的逻辑块的可编程逻辑器件，其中可编程开关的特征在于结合在其中的氧化物半导体晶体管。氧化物半导体晶体管的非常低的截止电流由于其保持与氧化物半导体晶体管连接的晶体管的栅极的电位的高能力而提供作为非易失性存储器的功能。氧化物半导体晶体管用作非易失性存储器的能力允许用于控制逻辑块的连接的配置数据即使在没有电源电位的情况下也被维持。因此，可以省略在设备启动时的配置数据的重写处理，这有助于降低设备的功耗。

3. 发明授权

US08570065B2 Programmable LSI 有权
标题翻译：可编程LSI
公开(公告)号：US08570065B2
公开(公告)日：2013-10-29
申请号：US13437961
申请日：2012-04-03
申请人： Hidetomo Kobayashi , Masami Endo , Yutaka Shionoiri , Hiroki Dembo , Tatsuji Nishijima , Kazuaki Ohshima , Seiichi Yoneda , Jun Koyama
发明人： Hidetomo Kobayashi , Masami Endo , Yutaka Shionoiri , Hiroki Dembo , Tatsuji Nishijima , Kazuaki Ohshima , Seiichi Yoneda , Jun Koyama
IPC分类号： H03K19/177 , G11C11/24
CPC分类号： H03K19/17796 , G11C16/0433 , H01L27/11803 , H01L27/1203
摘要： A low-power programmable LSI that can perform dynamic configuration is provided. The programmable LSI includes a plurality of logic elements. The plurality of logic elements each include a configuration memory. Each of the plurality of logic elements performs different arithmetic processing and changes an electrical connection between the logic elements, in accordance with the configuration data stored in the configuration memory. The configuration memory includes a set of a volatile storage circuit and a nonvolatile storage circuit. The nonvolatile storage circuit includes a transistor whose channel is formed in an oxide semiconductor layer and a capacitor whose one of a pair of electrodes is electrically connected to a node that is set in a floating state when the transistor is turned off.
摘要翻译：提供了可以执行动态配置的低功耗可编程LSI。可编程LSI包括多个逻辑元件。多个逻辑元件各自包括配置存储器。多个逻辑元件中的每一个执行不同的运算处理，并且根据存储在配置存储器中的配置数据改变逻辑元件之间的电连接。配置存储器包括一组易失性存储电路和非易失性存储电路。非易失性存储电路包括其沟道形成在氧化物半导体层中的晶体管和一对电极中的一个电极与晶体管截止时被设置为浮置状态的节点电连接的电容器。

4. 发明授权

US09344090B2 Programmable logic device 有权
标题翻译：可编程逻辑器件
公开(公告)号：US09344090B2
公开(公告)日：2016-05-17
申请号：US13463082
申请日：2012-05-03
申请人： Tatsuji Nishijima , Seiichi Yoneda
发明人： Tatsuji Nishijima , Seiichi Yoneda
IPC分类号： H03K19/177 , H01L27/06 , H01L27/118 , H01L27/12
CPC分类号： H03K19/1776 , H01L27/0688 , H01L27/11803 , H01L27/1225 , H03K19/17736 , H03K19/17764 , H03K19/17772
摘要： An object is to provide a programmable logic device which can hold configuration data even when a power supply potential is not supplied, has short start-up time of a logic block after the power is supplied, and can operate with low power. A transistor in a memory portion of a programmable switch includes a material which allows a sufficient reduction in off-state current of the transistor, such as an oxide semiconductor material which is a wide bandgap semiconductor. When the semiconductor material which allows a sufficient reduction in off-state current of the transistor is used, configuration data can be held even when a power supply potential is not supplied.
摘要翻译：本发明的目的是提供一种可编程逻辑器件，即使在未提供电源电位时也能够保持配置数据，在供电之后具有逻辑块的启动时间短并且可以以低功率工作。可编程开关的存储器部分中的晶体管包括允许充分降低诸如作为宽带隙半导体的氧化物半导体材料的晶体管的截止电流的材料。当使用允许晶体管的截止电流充分降低的半导体材料时，即使不提供电源电位，也可以保持配置数据。

5. 发明申请

US20120311365A1 PROGRAMMABLE LOGIC DEVICE 有权
标题翻译：可编程逻辑器件
公开(公告)号：US20120311365A1
公开(公告)日：2012-12-06
申请号：US13477192
申请日：2012-05-22
申请人： Seiichi Yoneda , Jun Koyama , Yutaka Shionoiri , Masami Endo , Hiroki Dembo , Tatsuji Nishijima , Hidetomo Kobayashi , Kazuaki Ohshima
发明人： Seiichi Yoneda , Jun Koyama , Yutaka Shionoiri , Masami Endo , Hiroki Dembo , Tatsuji Nishijima , Hidetomo Kobayashi , Kazuaki Ohshima
IPC分类号： G06F1/32
CPC分类号： H03K19/173 , G06F1/3243 , G06F3/0679 , H03K19/17772 , Y02D10/152
摘要： An object is to provide a programmable logic device configured to keep a connection state of logic circuits even while power supply voltage is stopped. The programmable logic device includes arithmetic circuits each of whose logic state can be changed; a configuration changing circuit changing the logic states of the arithmetic circuits; a power supply control circuit controlling supply of power supply voltage to the arithmetic circuits; a state memory circuit storing data on the logic states and data on states of the power supply voltage of the arithmetic circuits; and an arithmetic state control circuit controlling the configuration changing circuit and the power supply control circuit in accordance with the data stored in the state memory circuit. A transistor in which a channel formation region is formed in an oxide semiconductor layer is provided between the configuration changing circuit and each of the arithmetic circuits.
摘要翻译：目的是提供一种可编程逻辑器件，其被配置为即使在电源电压停止时仍保持逻辑电路的连接状态。可编程逻辑器件包括可以改变其逻辑状态的运算电路; 配置改变电路改变运算电路的逻辑状态; 电源控制电路，控制对所述运算电路的电源电压供给; 存储关于逻辑状态的数据的状态存储电路和关于运算电路的电源电压的状态的数据; 以及算术状态控制电路，根据存储在状态存储电路中的数据控制配置改变电路和电源控制电路。在配置改变电路和每个运算电路之间设置有在氧化物半导体层中形成沟道形成区的晶体管。

6. 发明授权

US09214587B2 Photoelectric conversion module and manufacturing method thereof 有权
标题翻译：光电转换模块及其制造方法
公开(公告)号：US09214587B2
公开(公告)日：2015-12-15
申请号：US13212395
申请日：2011-08-18
申请人： Kazuo Nishi , Yasushi Maeda , Ryosuke Motoyoshi , Yuji Oda , Kei Takahashi , Yoshiaki Ito , Tatsuji Nishijima
发明人： Kazuo Nishi , Yasushi Maeda , Ryosuke Motoyoshi , Yuji Oda , Kei Takahashi , Yoshiaki Ito , Tatsuji Nishijima
IPC分类号： H01L31/0224 , H01L31/075 , H01L31/02 , H01L31/05 , H01L31/046
CPC分类号： H01L31/075 , H01L31/02008 , H01L31/046 , H01L31/0504 , Y02E10/548
摘要： A photoelectric conversion module in which an output voltage defect is suppressed is obtained by forming in parallel over a substrate n number (n is a natural number) of integrated photoelectric conversion devices each including a plurality of cells that are connected in series, and electrically connecting in parallel n−1 number or less of integrated photoelectric conversion devices with normal electrical characteristics and excluding an integrated photoelectric conversion device with a characteristic defect such as a short-circuit between top and bottom electrodes or a leak current due to a structural defect or the like formed in a semiconductor layer or the like.
摘要翻译：通过在基板上平行地形成n个（n为自然数）的集成光电转换装置，其中包含多个串联连接的单元，并且电连接，得到抑制输出电压缺陷的光电转换模块并联n-1个或更少的具有正常电特性的集成光电转换装置，并且不包括具有诸如顶部和底部电极之间的短路的特性缺陷或由于结构缺陷引起的漏电流的集成光电转换装置如在半导体层等中形成的。

7. 发明授权

US08922182B2 DC converter circuit and power supply circuit 有权
标题翻译： DC转换电路和电源电路
公开(公告)号：US08922182B2
公开(公告)日：2014-12-30
申请号：US12956491
申请日：2010-11-30
申请人： Kei Takahashi , Yoshiaki Ito , Hiroki Inoue , Tatsuji Nishijima
发明人： Kei Takahashi , Yoshiaki Ito , Hiroki Inoue , Tatsuji Nishijima
IPC分类号： G05F1/00 , H01L27/12 , H01L29/786 , H02M3/155
CPC分类号： H02M3/156 , H01L27/12 , H01L27/1225 , H01L29/7869 , H02M3/155
摘要： A DC converter circuit having high reliability is provided. The DC converter circuit includes: an inductor configured to generate electromotive force in accordance with a change in flowing current; a transistor including a gate, a source, and a drain, which is configured to control generation of the electromotive force in the inductor by being on or off; a rectifier in a conducting state when the transistor is off; and a control circuit configured to control on and off of the transistor. The transistor includes an oxide semiconductor layer whose hydrogen concentration is less than or equal to 5×1019 atoms/cm3 as a channel formation layer.
摘要翻译：提供了具有高可靠性的DC转换器电路。 DC转换器电路包括：电感器，被配置为根据流动电流的变化产生电动势; 包括栅极，源极和漏极的晶体管，其被配置为通过导通或关断来控制电感器中的电动势的产生; 当晶体管截止时处于导通状态的整流器; 以及被配置为控制晶体管的导通和截止的控制电路。晶体管包括作为沟道形成层的氢浓度小于或等于5×1019原子/ cm3的氧化物半导体层。

8. 发明授权

US08311315B2 Pattern inspection method and apparatus 有权
标题翻译：图案检验方法及装置
公开(公告)号：US08311315B2
公开(公告)日：2012-11-13
申请号：US13067782
申请日：2011-06-27
申请人： Teppei Oguni , Tatsuji Nishijima , Akiharu Miyanaga
发明人： Teppei Oguni , Tatsuji Nishijima , Akiharu Miyanaga
IPC分类号： G06K9/00 , H04N7/18
CPC分类号： G01N21/95692 , G06T7/0004 , G06T7/90 , G06T2207/30148
摘要： A color image of an inspection object is taken by an imaging means capable of taking a color image to obtain color information of an RGB color space. A gray-scale image of a color component of the RGB color space or another color space is generated, and the inspection object is detected by a pattern recognition technique. Alternatively, a binary image is generated from the generated gray-scale image, and the inspection object is detected by performing pattern recognition on the binary image. Color data of a pixel occupied by the detected inspection object is compared with color data of a non-defective inspection object which is previously prepared to judge whether or not the inspection object is defective. In addition, this judgment result is reflected in another manufacturing step through a network and product quality is improved.
摘要翻译：检查对象的彩色图像由能够拍摄彩色图像的成像装置获取以获得RGB颜色空间的颜色信息。生成RGB颜色空间或其他颜色空间的颜色分量的灰度图像，并且通过模式识别技术检测检查对象。或者，从生成的灰度图像生成二值图像，并且通过对二值图像执行模式识别来检测检查对象。将检测到的检查对象占据的像素的颜色数据与预先准备好判断检查对象是否有缺陷的无缺陷检查对象的颜色数据进行比较。此外，这种判断结果反映在通过网络的另一制造步骤中，并且产品质量得到改善。

9. 发明申请

US20060210142A1 Pattern inspection method and apparatus 有权
标题翻译：图案检验方法及装置
公开(公告)号：US20060210142A1
公开(公告)日：2006-09-21
申请号：US11334476
申请日：2006-01-19
申请人： Teppei Oguni , Tatsuji Nishijima , Akiharu Miyanaga
发明人： Teppei Oguni , Tatsuji Nishijima , Akiharu Miyanaga
IPC分类号： H04N7/18 , G06K9/00
CPC分类号： G01N21/95692 , G06T7/0004 , G06T7/90 , G06T2207/30148
摘要： A color image of an inspection object is taken by an imaging means capable of taking a color image to obtain color information of an RGB color space. A gray-scale image of a color component of the RGB color space or another color space is generated, and the inspection object is detected by a pattern recognition technique. Alternatively, a binary image is generated from the generated gray-scale image, and the inspection object is detected by performing pattern recognition on the binary image. Color data of a pixel occupied by the detected inspection object is compared with color data of a non-defective inspection object which is previously prepared to judge whether or not the inspection object is defective. In addition, this judgment result is reflected in another manufacturing step through a network and product quality is improved.
摘要翻译：检查对象的彩色图像由能够拍摄彩色图像的成像装置获取以获得RGB颜色空间的颜色信息。生成RGB颜色空间或其他颜色空间的颜色分量的灰度图像，并且通过模式识别技术检测检查对象。或者，从生成的灰度图像生成二值图像，并且通过对二值图像执行模式识别来检测检查对象。将检测到的检查对象占据的像素的颜色数据与预先准备好判断检查对象是否有缺陷的无缺陷检查对象的颜色数据进行比较。此外，这种判断结果反映在通过网络的另一制造步骤中，并且产品质量得到改善。

10. 发明授权

US08698521B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08698521B2
公开(公告)日：2014-04-15
申请号：US13472018
申请日：2012-05-15
申请人： Tatsuji Nishijima
发明人： Tatsuji Nishijima
IPC分类号： H03K19/0944
CPC分类号： H01L29/7869 , H03K19/0944 , H03K19/20
摘要： A semiconductor device in which a transistor using an oxide semiconductor containing In, Zn, or the like for a channel region can be driven like a p-channel transistor is provided. The semiconductor device includes a transistor and an inverter, wherein an output of the inverter is input to a gate of the transistor, a channel region of the transistor includes an oxide semiconductor film containing In, Zn, or Sn, and each channel region of transistors in the inverter contains silicon. When a high voltage is input to the inverter, a low voltage is output from the inverter and is input to the gate of the transistor, so that the transistor is turned off. When a low is input to the inverter, a high voltage is output from the inverter and is input to the gate of the transistor, so that the transistor is turned on.
摘要翻译：提供一种半导体器件，其中可以像p沟道晶体管一样驱动使用含有沟道区的In，Zn等的氧化物半导体的晶体管。半导体器件包括晶体管和反相器，其中反相器的输出被输入到晶体管的栅极，晶体管的沟道区包括含有In，Zn或Sn的氧化物半导体膜，以及晶体管的每个沟道区在变频器内含硅。当高电压输入到逆变器时，从反相器输出低电压并输入到晶体管的栅极，使得晶体管截止。当反相器输入低电平时，从反相器输出高电压并输入到晶体管的栅极，使晶体管导通。

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