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    • 1. 发明授权
    • Semiconductor device
    • 半导体器件
    • US08698521B2
    • 2014-04-15
    • US13472018
    • 2012-05-15
    • Tatsuji Nishijima
    • Tatsuji Nishijima
    • H03K19/0944
    • H01L29/7869H03K19/0944H03K19/20
    • A semiconductor device in which a transistor using an oxide semiconductor containing In, Zn, or the like for a channel region can be driven like a p-channel transistor is provided. The semiconductor device includes a transistor and an inverter, wherein an output of the inverter is input to a gate of the transistor, a channel region of the transistor includes an oxide semiconductor film containing In, Zn, or Sn, and each channel region of transistors in the inverter contains silicon. When a high voltage is input to the inverter, a low voltage is output from the inverter and is input to the gate of the transistor, so that the transistor is turned off. When a low is input to the inverter, a high voltage is output from the inverter and is input to the gate of the transistor, so that the transistor is turned on.
    • 提供一种半导体器件,其中可以像p沟道晶体管一样驱动使用含有沟道区的In,Zn等的氧化物半导体的晶体管。 半导体器件包括晶体管和反相器,其中反相器的输出被输入到晶体管的栅极,晶体管的沟道区包括含有In,Zn或Sn的氧化物半导体膜,以及晶体管的每个沟道区 在变频器内含硅。 当高电压输入到逆变器时,从反相器输出低电压并输入到晶体管的栅极,使得晶体管截止。 当反相器输入低电平时,从反相器输出高电压并输入到晶体管的栅极,使晶体管导通。
    • 2. 发明授权
    • Programmable logic device
    • 可编程逻辑器件
    • US08581625B2
    • 2013-11-12
    • US13463084
    • 2012-05-03
    • Seiichi YonedaTatsuji Nishijima
    • Seiichi YonedaTatsuji Nishijima
    • H03K19/173
    • H03K19/0013H01L27/1225H01L27/124H01L29/7869H03K19/0008H03K19/17736H03K19/17744
    • An object is to provide a programmable logic device having logic blocks connected to each other by a programmable switch, where the programmable switch is characterized by an oxide semiconductor transistor incorporated therein. The extremely low off-state current of the oxide semiconductor transistor provides a function as a non-volatile memory due to its high ability to hold a potential of a gate electrode of a transistor which is connected to the oxide semiconductor transistor. The ability of the oxide semiconductor transistor to function as a non-volatile memory allows the configuration data for controlling the connection of the logic blocks to be maintained even in the absence of a power supply potential. Hence, the rewriting process of the configuration data at starting of the device can be omitted, which contributes to the reduction in power consumption of the device.
    • 目的是提供一种具有通过可编程开关彼此连接的逻辑块的可编程逻辑器件,其中可编程开关的特征在于结合在其中的氧化物半导体晶体管。 氧化物半导体晶体管的非常低的截止电流由于其保持与氧化物半导体晶体管连接的晶体管的栅极的电位的高能力而提供作为非易失性存储器的功能。 氧化物半导体晶体管用作非易失性存储器的能力允许用于控制逻辑块的连接的配置数据即使在没有电源电位的情况下也被维持。 因此,可以省略在设备启动时的配置数据的重写处理,这有助于降低设备的功耗。
    • 4. 发明授权
    • Semiconductor device and wireless tag using the same
    • 半导体器件和无线标签使用相同
    • US08439270B2
    • 2013-05-14
    • US12558156
    • 2009-09-11
    • Tatsuji Nishijima
    • Tatsuji Nishijima
    • G06K19/06H01L29/66H02H3/20
    • H01L27/0251G06K19/0707G06K19/0712G06K19/0715G06K19/07749
    • In a wireless tag with which a wireless communication system whose electric power of a carrier wave from a R/W is high, an overvoltage protection circuit is provided to prevent from generating excessive electric power in the wireless tag when the wireless tag receives excessive electric power. However, as noise is generated by operation of the overvoltage protection circuit, an error of reception occurs in receiving a signal whose modulation factor is small. To solve the problem, the maximum value of generated voltage in the wireless tag is held in a memory circuit after the overvoltage protection circuit operates, then the overvoltage protection circuit is controlled in accordance with the maximum value of generated voltage. The voltages at which the overvoltage protection circuit starts and stops operating are different from each other, and hysteresis occurs between the timing when the overvoltage protection circuit starts and stops operating.
    • 在R / W的载波功率高的无线通信系统的无线标签中,提供过电压保护电路,以防止当无线标签接收到过大的电力时在无线标签中产生过大的电力 。 然而,由于通过过电压保护电路的工作产生噪声,因此在接收调制度小的信号时发生接收错误。 为了解决这个问题,在过电压保护电路工作之后,将无线标签中产生的电压的最大值保持在存储电路中,然后根据产生的电压的最大值来控制过电压保护电路。 过电压保护电路的起动和停止运行的电压彼此不同,在过电压保护电路的启动停止运行的定时之间产生滞后。
    • 6. 发明申请
    • CURRENT DETECTION CIRCUIT
    • 电流检测电路
    • US20120062240A1
    • 2012-03-15
    • US13222232
    • 2011-08-31
    • Tatsuji NISHIJIMA
    • Tatsuji NISHIJIMA
    • G01R27/00
    • G01R19/0092
    • An object is to widen detection range of current. A current detection circuit includes a first resistor, which is connected to a first connection terminal and a second connection terminal; a second resistor, which is connected to the first resistor; a third resistor, which is connected to the first resistor; a first transistor, a source of which is connected to the second resistor; a second transistor, a source of which is connected to the third resistor, and a drain and a gate of which is connected to a gate of the first transistor; a third transistor, a source of which is connected to the source of the second transistor, and a gate of which is connected to the drain of the first transistor; and a fourth resistor, which is connected to the drain of the third transistor, and to which a voltage is input.
    • 目的是扩大电流的检测范围。 电流检测电路包括连接到第一连接端子和第二连接端子的第一电阻器; 第二电阻器,其连接到第一电阻器; 连接到第一电阻器的第三电阻器; 第一晶体管,其源极连接到第二电阻器; 第二晶体管,其源极连接到第三电阻器,漏极和栅极连接到第一晶体管的栅极; 第三晶体管,其源极连接到第二晶体管的源极,其栅极连接到第一晶体管的漏极; 以及第四电阻器,其连接到第三晶体管的漏极,并且输入电压。
    • 8. 发明申请
    • Identification system and identification method
    • 识别系统和识别方法
    • US20070257775A1
    • 2007-11-08
    • US11790077
    • 2007-04-23
    • Tatsuji Nishijima
    • Tatsuji Nishijima
    • H04Q5/22
    • G06K7/0008
    • A method in which an interrogator identifies a wireless tag under a management of a management server provided with steps; the interrogator performs registration application to the management server, the management server performs registration of the interrogator, the management server makes interrogator information, the management server controls start and end of carrier sense performed by the interrogator, the management server controls transmission and stop of a wireless signal performed by the interrogator, the management server makes the interrogator transmit the result of carrier sense, the interrogator transmits the result of carrier sense, and the management server makes interrogator interference information.
    • 一种询问器在管理服务器的管理下识别无线标签的方法,该管理服务器具有步骤; 询问器向管理服务器执行注册应用,管理服务器执行询问器的注册,管理服务器进行询问器信息,管理服务器控制询问器执行的载波检测的开始和结束,管理服务器控制传输和停止 无线信号由询问器执行,管理服务器使询问器发送载波侦听结果,询问器发送载波侦听结果,管理服务器发出询问器干扰信息。
    • 9. 发明授权
    • Semiconductor device comprising a first inverter and a second inverter
    • 半导体器件包括第一反相器和第二反相器
    • US09490241B2
    • 2016-11-08
    • US13533113
    • 2012-06-26
    • Masumi NomuraTatsuji NishijimaKosei Noda
    • Masumi NomuraTatsuji NishijimaKosei Noda
    • H01L29/10H01L27/02H01L27/11
    • H01L27/0207H01L27/1108
    • A semiconductor device which is downsized while a short-channel effect is suppressed and whose power consumption is reduced is provided. A downsized SRAM circuit is formed, which includes a first inverter including a first transistor and a second transistor overlapping with each other; a second inverter including a third transistor and a fourth transistor overlapping with each other; a first selection transistor; and a second selection transistor. An output terminal of the first inverter, an input terminal of the second inverter, and one of a source and a drain of the first selection transistor are connected to one another, and an output terminal of the second inverter, an input terminal of the first inverter, and one of a source and a drain of the second selection transistor are connected to one another.
    • 提供了在抑制短通道效应并且其功耗降低的同时小型化的半导体器件。 形成了小型SRAM电路,其包括第一反相器,其包括彼此重叠的第一晶体管和第二晶体管; 第二反相器,包括彼此重叠的第三晶体管和第四晶体管; 第一选择晶体管; 和第二选择晶体管。 第一反相器的输出端子,第二反相器的输入端子和第一选择晶体管的源极和漏极之一彼此连接,第二反相器的输出端子,第一反相器的输入端子,第一反相器的输入端子, 反相器和第二选择晶体管的源极和漏极之一彼此连接。