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1. 发明授权

US09214587B2 Photoelectric conversion module and manufacturing method thereof 有权
标题翻译：光电转换模块及其制造方法
公开(公告)号：US09214587B2
公开(公告)日：2015-12-15
申请号：US13212395
申请日：2011-08-18
申请人： Kazuo Nishi , Yasushi Maeda , Ryosuke Motoyoshi , Yuji Oda , Kei Takahashi , Yoshiaki Ito , Tatsuji Nishijima
发明人： Kazuo Nishi , Yasushi Maeda , Ryosuke Motoyoshi , Yuji Oda , Kei Takahashi , Yoshiaki Ito , Tatsuji Nishijima
IPC分类号： H01L31/0224 , H01L31/075 , H01L31/02 , H01L31/05 , H01L31/046
CPC分类号： H01L31/075 , H01L31/02008 , H01L31/046 , H01L31/0504 , Y02E10/548
摘要： A photoelectric conversion module in which an output voltage defect is suppressed is obtained by forming in parallel over a substrate n number (n is a natural number) of integrated photoelectric conversion devices each including a plurality of cells that are connected in series, and electrically connecting in parallel n−1 number or less of integrated photoelectric conversion devices with normal electrical characteristics and excluding an integrated photoelectric conversion device with a characteristic defect such as a short-circuit between top and bottom electrodes or a leak current due to a structural defect or the like formed in a semiconductor layer or the like.
摘要翻译：通过在基板上平行地形成n个（n为自然数）的集成光电转换装置，其中包含多个串联连接的单元，并且电连接，得到抑制输出电压缺陷的光电转换模块并联n-1个或更少的具有正常电特性的集成光电转换装置，并且不包括具有诸如顶部和底部电极之间的短路的特性缺陷或由于结构缺陷引起的漏电流的集成光电转换装置如在半导体层等中形成的。

2. 发明授权

US09087950B2 Photoelectric conversion device and method for manufacturing the same 有权
标题翻译：光电转换装置及其制造方法
公开(公告)号：US09087950B2
公开(公告)日：2015-07-21
申请号：US12788862
申请日：2010-05-27
申请人： Shunpei Yamazaki , Yukie Suzuki , Kazuo Nishi
发明人： Shunpei Yamazaki , Yukie Suzuki , Kazuo Nishi
IPC分类号： H01L31/18 , H01L31/042 , H01L31/076 , B60T1/10 , H01L31/0368 , H01L31/0392 , H01L31/048 , H01L31/0687 , H01L31/043
CPC分类号： H01L31/076 , B60T1/10 , H01L31/03685 , H01L31/03926 , H01L31/043 , H01L31/048 , H01L31/0488 , H01L31/0687 , H01L2924/0002 , H01L2924/09701 , Y02E10/544 , Y02E10/545 , Y02E10/548 , Y02E10/549 , Y02P70/521 , H01L2924/00
摘要： A multi-junction photoelectric conversion device that can be manufactured by a simple method is provided. In addition, a photoelectric conversion device whose mechanical strength is increased without complicating a manufacturing process is provided. A photoelectric conversion device includes a first cell having a photoelectric conversion function, a second cell having a photoelectric conversion function, and a structure body including a fibrous body, which firmly attaches and electrically connects the first cell and the second cell to each other. Accordingly, a multi-junction photoelectric conversion device in which semiconductor junctions are connected in series and sufficient electrical connection between p-i-n junctions is ensured can be provided.
摘要翻译：提供可以通过简单的方法制造的多结光电转换装置。此外，提供了机械强度提高而不使制造过程复杂化的光电转换装置。光电转换装置包括具有光电转换功能的第一单元，具有光电转换功能的第二单元和包括纤维体的结构体，其将第一单元和第二单元彼此牢固地连接并电连接。因此，可以确保其中半导体接头串联连接并且在p-i-n结之间具有足够的电连接的多结光电转换装置。

3. 发明授权

US08481370B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08481370B2
公开(公告)日：2013-07-09
申请号：US11498164
申请日：2006-08-03
申请人： Kazuo Nishi , Hiroki Adachi , Naoto Kusumoto , Yuusuke Sugawara , Hidekazu Takahashi , Daiki Yamada , Yoshikazu Hiura
发明人： Kazuo Nishi , Hiroki Adachi , Naoto Kusumoto , Yuusuke Sugawara , Hidekazu Takahashi , Daiki Yamada , Yoshikazu Hiura
IPC分类号： H01L21/00
CPC分类号： H01L31/0203 , H01L23/49805 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/2929 , H01L2224/293 , H01L2224/83851 , H01L2924/01078 , H01L2924/01079 , H01L2924/07811 , H01L2924/09701 , H01L2924/12036 , H01L2924/12042 , H01L2924/14 , H01L2924/3512 , H01L2924/00 , H01L2924/00014
摘要： The present invention provides a semiconductor device having a structure that can be mounted on a wiring substrate, as for the semiconductor device formed over a thin film-thickness substrate, a film-shaped substrate, or a sheet-like substrate. In addition, the present invention provides a method for manufacturing a semiconductor device that is capable of raising a reliability of mounting on a wiring substrate. One feature of the present invention is to bond a semiconductor element formed on a substrate having isolation to a member that a conductive film is formed via a medium having an anisotropic conductivity.
摘要翻译：本发明提供一种半导体器件，其具有能够安装在布线基板上的结构，对于形成在薄膜基板，薄膜状基板或片状基板上的半导体器件。另外，本发明提供一种能够提高安装在布线基板上的可靠性的半导体装置的制造方法。本发明的一个特征是通过具有各向异性导电性的介质将形成在具有隔离衬底的半导体元件与形成有导电膜的构件接合。

4. 发明授权

US08455753B2 Solar cell and semiconductor device, and manufacturing method thereof 有权
标题翻译：太阳能电池和半导体器件及其制造方法
公开(公告)号：US08455753B2
公开(公告)日：2013-06-04
申请号：US11324491
申请日：2006-01-04
申请人： Kazuo Nishi , Tomoyuki Aoki , Toshiyuki Isa , Gen Fujii
发明人： Kazuo Nishi , Tomoyuki Aoki , Toshiyuki Isa , Gen Fujii
IPC分类号： H01L31/00
CPC分类号： G04C10/02 , H01L31/022425 , H01L31/022466 , H01L31/022475 , H01L31/0465 , H01L31/048 , H01L31/1884 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： It is an object of the present invention to minimize an electrode in a solar cell to minimize the solar cell. The present invention provides a method for manufacturing a solar cell comprising the steps of forming a first electrode layer over a substrate, forming a photoelectric conversion layer over the first electrode layer, forming an organic layer over the photoelectric conversion layer, forming an opening reaching the first electrode layer in the photoelectric conversion layer, and forming a second electrode layer by filling the opening with a conductive paste, wherein the organic layer modifies the surface of the photoelectric conversion layer and a contact angle between the conductive paste and the photoelectric conversion becomes greater. According to the present invention, wettability of a photoelectric conversion layer can be decreased by forming an organic layer on a surface of the photoelectric conversion layer. Thereby an electrode layer and an insulating isolation layer can be thinned.
摘要翻译：本发明的目的是使太阳能电池中的电极最小化以最小化太阳能电池。本发明提供一种太阳能电池的制造方法，包括以下步骤：在基板上形成第一电极层，在第一电极层上形成光电转换层，在光电转换层上形成有机层，形成开口到达第一电极层，并且通过用导电膏填充开口形成第二电极层，其中有机层改性光电转换层的表面，并且导电糊和光电转换之间的接触角变得更大。根据本发明，通过在光电转换层的表面上形成有机层，可以降低光电转换层的润湿性。由此，可以使电极层和绝缘隔离层变薄。

5. 发明授权

US08415664B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08415664B2
公开(公告)日：2013-04-09
申请号：US13271272
申请日：2011-10-12
申请人： Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto , Kazuo Nishi , Yuusuke Sugawara , Hironobu Takahashi
发明人： Tatsuya Arao , Daiki Yamada , Hidekazu Takahashi , Naoto Kusumoto , Kazuo Nishi , Yuusuke Sugawara , Hironobu Takahashi
IPC分类号： H01L31/0232
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/1464 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L27/14692
摘要： Techniques are provided for obtaining a photoelectric conversion device having a favorable spectral sensitivity characteristic and reduced variation in output current without a contamination substance mixed into a photoelectric conversion layer or a transistor, and for obtaining a highly reliable semiconductor device including a photoelectric conversion device. A semiconductor device may include, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer.
摘要翻译：提供了用于获得具有良好的光谱灵敏度特性和减少的输出电流变化的光电转换装置的技术，而没有混入光电转换层或晶体管中的污染物质，并且用于获得包括光电转换装置的高度可靠的半导体装置。半导体器件可以在绝缘表面上包括第一电极; 第二电极; 在第一电极和第二电极之间的滤色器; 覆盖滤色器的外涂层; 以及在所述外涂层上的光电转换层，其中所述光电转换层的一个端部与所述第一电极接触，并且所述滤色器的端部位于所述光电转换层的另一端部的内部。

6. 发明申请

US20120104862A1 PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：光电转换器件
公开(公告)号：US20120104862A1
公开(公告)日：2012-05-03
申请号：US13281479
申请日：2011-10-26
申请人： Yoshiaki Ito , Kazuo Nishi , Kei Takahashi
发明人： Yoshiaki Ito , Kazuo Nishi , Kei Takahashi
IPC分类号： H02J1/00
CPC分类号： H02S40/32 , H02J1/10 , H02J3/383 , Y02E10/563 , Y10T307/707
摘要： A photoelectric conversion device includes at least two photoelectric conversion elements which have voltage-current characteristics different from each other. Further, one of the photoelectric conversion elements has photoelectric conversion efficiency higher than that of the other photoelectric conversion element under the environment in which room light can be obtained. Furthermore, the other photoelectric conversion element has photoelectric conversion efficiency higher than the one of the photoelectric conversion elements under the environment in which sunlight can be obtained. Moreover, each of the voltage of electric power generated in the at least two photoelectric conversion elements is adjusted by one of at least two DC-DC converters corresponding the photoelectric conversion element. In addition, part of the electric power generated in the one of the photoelectric conversion elements is used as drive electric power of the at least two DC-DC converter.
摘要翻译：光电转换装置包括具有彼此不同的电压 - 电流特性的至少两个光电转换元件。此外，在可以获得室内光的环境下，其中一个光电转换元件的光电转换效率高于另一光电转换元件的光电转换效率。此外，另一光电转换元件在可以获得太阳光的环境下具有比一个光电转换元件高的光电转换效率。此外，通过对应于光电转换元件的至少两个DC-DC转换器之一来调节在至少两个光电转换元件中产生的电力的每个电压。另外，将一个光电转换元件中产生的部分电力用作至少两个DC-DC转换器的驱动电力。

7. 发明授权

US08039782B2 Optical sensor device and electronic apparatus with an amplifier circuit and dual level shift circuit 有权
标题翻译：光电传感器和电子设备，具有放大电路和双电平移位电路
公开(公告)号：US08039782B2
公开(公告)日：2011-10-18
申请号：US11829709
申请日：2007-07-27
申请人： Jun Koyama , Takeshi Osada , Takanori Matsuzaki , Kazuo Nishi , Junya Maruyama
发明人： Jun Koyama , Takeshi Osada , Takanori Matsuzaki , Kazuo Nishi , Junya Maruyama
IPC分类号： H01J40/14
CPC分类号： H01L27/14609 , H01L27/12 , H01L27/14692
摘要： In an optical sensor device employing an amorphous silicon photodiode, an external amplifier IC and the like are required due to low current capacity of the sensor element in order to improve the load driving capacity. It leads to increase in cost and mounting space of the optical sensor device. In addition, noise may easily superimpose since the photodiode and the amplifier IC are connected to each other over a printed circuit board. According to the invention, an amorphous silicon photodiode and an amplifier configured by a thin film transistor are formed integrally over a substrate so that the load driving capacity is improved while reducing cost and mounting space. Superimposing noise can be also reduced.
摘要翻译：在采用非晶硅光电二极管的光学传感器装置中，由于传感器元件的低电流容量需要外部放大器IC等，以提高负载驱动能力。这导致光学传感器装置的成本和安装空间的增加。此外，由于光电二极管和放大器IC在印刷电路板上彼此连接，噪声可能容易地叠加。根据本发明，非晶硅光电二极管和由薄膜晶体管构成的放大器一体地形成在基板上，从而提高负载驱动能力，同时降低成本和安装空间。叠加噪音也可以减少。

8. 发明授权

US07919779B2 Semiconductor device and method of manufacturing thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07919779B2
公开(公告)日：2011-04-05
申请号：US12369802
申请日：2009-02-12
申请人： Kazuo Nishi , Toru Takayama , Yuugo Goto
发明人： Kazuo Nishi , Toru Takayama , Yuugo Goto
IPC分类号： H01L29/04
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1218 , H01L27/1222 , H01L27/1255 , H01L27/1446 , H01L29/66757 , H01L29/78675 , H01L2221/68368 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05548 , H01L2224/05569 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05669 , H01L2224/16225 , H01L2924/00014 , H01L2224/05599
摘要： The manufacturing method of a semiconductor device according to the present invention comprises steps of forming a metal film, an insulating film, and an amorphous semiconductor film in sequence over a first substrate; crystallizing the metal film and the amorphous semiconductor film; forming a first semiconductor element by using the crystallized semiconductor film as an active region; attaching a support to the first semiconductor element by using an adhesive; causing separation between the metal film and the insulating film; attaching a second substrate to the separated insulating film; separating the support by removing the adhesive; forming an amorphous semiconductor film over the first semiconductor element; and forming a second semiconductor element using the amorphous semiconductor film as an active region.
摘要翻译：根据本发明的半导体器件的制造方法包括以下步骤：在第一衬底上依次形成金属膜，绝缘膜和非晶半导体膜; 使金属膜和非晶半导体膜结晶化; 通过使用结晶化的半导体膜作为活性区域形成第一半导体元件; 通过使用粘合剂将支撑件附接到第一半导体元件; 导致金属膜和绝缘膜之间的分离; 将第二基板附接到所述分离的绝缘膜; 通过去除粘合剂来分离载体; 在所述第一半导体元件上形成非晶半导体膜; 以及使用所述非晶半导体膜形成作为有源区的第二半导体元件。

9. 发明申请

US20100307590A1 PHOTOELECTRIC CONVERSION DEVICE 审中-公开
标题翻译：光电转换器件
公开(公告)号：US20100307590A1
公开(公告)日：2010-12-09
申请号：US12792175
申请日：2010-06-02
申请人： Shunpei YAMAZAKI , Kazuo NISHI
发明人： Shunpei YAMAZAKI , Kazuo NISHI
IPC分类号： H01L31/00
CPC分类号： H01L31/1884 , C23C14/0676 , H01L31/022466 , H01L31/022483 , H01L31/046 , H01L31/0463 , H01L31/0465 , H01L31/076 , H01L31/077 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： The present invention provides a technique in which a cheap zinc oxide material can be used as a light-transmitting conductive film of a photoelectric conversion device. The present invention is a photoelectric conversion device including, between a first electrode and a second electrode, at least one unit cell in which a first impurity semiconductor layer having one conductivity type, a semiconductor layer, and a second impurity semiconductor layer having a conductivity type opposite to the first impurity semiconductor layer are sequentially stacked and a semiconductor junction is included. The first electrode or the second electrode includes conductive oxynitride containing zinc and aluminum. In the conductive oxynitride containing zinc and aluminum: the relative proportion of the zinc is less than or equal to 47 at. % and higher than that of the aluminum; and the relative proportion of the aluminum is higher than that of nitrogen.
摘要翻译：本发明提供了可以使用便宜的氧化锌材料作为光电转换装置的透光导电膜的技术。本发明是一种光电转换装置，在第一电极和第二电极之间包括至少一个单元电池，其中具有一种导电类型的第一杂质半导体层，半导体层和具有导电类型的第二杂质半导体层与第一杂质半导体层相对的顺序堆叠并且包括半导体结。第一电极或第二电极包括含有锌和铝的导电氮氧化物。在含有锌和铝的导电氮氧化物中：锌的相对比例小于或等于47at。％以上; 铝的相对比例高于氮。

10. 发明申请

US20100307559A1 PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20100307559A1
公开(公告)日：2010-12-09
申请号：US12793329
申请日：2010-06-03
申请人： Shunpei YAMAZAKI , Yukie SUZUKI , Kazuo NISHI , Yasuyuki ARAI
发明人： Shunpei YAMAZAKI , Yukie SUZUKI , Kazuo NISHI , Yasuyuki ARAI
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L31/1896 , H01L31/043 , H01L31/046 , H01L31/0465 , H01L31/048 , H01L2924/0002 , H01L2924/09701 , H02S40/38 , Y02E10/50 , H01L2924/00
摘要： An object is to provide a photoelectric conversion device whose mechanical strength is increased without complicating a manufacturing process. The photoelectric conversion device includes a first cell having a photoelectric conversion function, a second cell having a photoelectric conversion function, and a structure body including a fibrous body which firmly attaches the first cell and the second cell. As a result, p-i-n junctions are bonded with the structure body in which the fibrous body is impregnated with an organic resin, which is a so-called prepreg. Thus, a photoelectric conversion device whose mechanical strength is increased can be realized while the manufacturing cost is reduced.
摘要翻译：本发明的目的是提供一种其机械强度增加而不会使制造过程复杂化的光电转换装置。光电转换装置包括具有光电转换功能的第一单元，具有光电转换功能的第二单元，以及包括牢固地附接第一单元和第二单元的纤维体的结构体。结果，p-i-n结与其中纤维体被浸渍有机树脂的结构体结合，所述有机树脂是所谓的预浸料。因此，可以实现机械强度提高的光电转换装置，同时降低制造成本。

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