专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06189482B1 High temperature, high flow rate chemical vapor deposition apparatus and related methods 失效
标题翻译：高温，高流量化学气相沉积装置及相关方法
公开(公告)号：US06189482B1
公开(公告)日：2001-02-20
申请号：US08799415
申请日：1997-02-12
申请人： Jun Zhao , Lee Luo , Xiao Liang Jin , Jia-Xiang Wang , Talex Sajoto , Stefan Wolff , Leonid Selyutin , Ashok Sinha
发明人： Jun Zhao , Lee Luo , Xiao Liang Jin , Jia-Xiang Wang , Talex Sajoto , Stefan Wolff , Leonid Selyutin , Ashok Sinha
IPC分类号： C23C1600
CPC分类号： H01J37/3244 , C23C16/4401 , C23C16/4412 , C23C16/4586 , C23C16/52 , H01J37/32082 , H01J2237/2001 , H01J2237/3321
摘要： The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 Å/minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400° C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.
摘要翻译：本发明提供了用于从四氯化钛源在半导体衬底上以200埃/分钟的速率沉积钛膜的系统，方法和装置。根据本发明的实施例，具有用于底部供电RF能力的集成射频平面的陶瓷加热器组件允许在至少400℃的温度下进行PECVD沉积以用于更有效的等离子体处理。热扼流器将加热器与其支撑轴隔离，减少了加热器两端的热梯度，以减少加热器断裂的危险并改善加热器的温度均匀性。沉积系统包括限流器环和其它特征，其允许15升/分钟的流速通过室，具有最小的背侧沉积并且最小化在室底部上的沉积，从而降低室清洁的频率，并且减少清洁时间和调味料。沉积和清洁过程也是本发明的进一步的实施方案。

2. 发明授权

US6035101A High temperature multi-layered alloy heater assembly and related methods 失效
标题翻译：高温多层合金加热器总成及相关方法
公开(公告)号：US6035101A
公开(公告)日：2000-03-07
申请号：US56703
申请日：1998-03-26
申请人： Talex Sajoto , Leonid Selyutin , Jun Zhao , Stefan Wolff
发明人： Talex Sajoto , Leonid Selyutin , Jun Zhao , Stefan Wolff
IPC分类号： H05B3/68 , C23C16/458 , C23C16/46 , C23C16/509 , H01L21/00 , H01L21/285 , H01L21/31 , C23C16/00 , F27B5/14 , F28F7/00 , H01L21/68
CPC分类号： C23C16/463 , C23C16/4586 , C23C16/46 , C23C16/5096 , H01L21/67109
摘要： The present invention provides systems, methods and apparatus for heating substrates in a processing chamber to temperatures up to at least 700.degree. C. In accordance with an embodiment of the invention a heater assembly with an inner core of high thermal conductivity is encased in a shell of lower thermal conductivity, creating a nearly isothermal interface between the core and shell. The inner core is brazed to the shell, promoting thermal transfer, and acts as a thermal short between opposing surfaces of the shell. The heater assembly is designed to minimize thermal stresses arising from the difference in the thermal expansion coefficients of the various components of the multi-layered heater assembly. In one embodiment of the invention, two independently-powered heating elements are arranged concentrically to each other to create a dual zone heater. A thermal gap in the inner core between the inner and outer heating elements de-couples the zones and provides a more controllable temperature profile at the surface of the heater, including excellent temperature uniformity. In one embodiment, an RF isolator is placed between a heater and a support shaft, allowing the heater to be powered as an electrode in a plasma process.
摘要翻译：本发明提供了用于将处理室中的衬底加热至至少700℃的温度的系统，方法和设备。根据本发明的实施例，具有高导热性的内芯的加热器组件被包封在壳体具有较低的导热性，从而在芯和壳之间产生接近等温的界面。内芯被钎焊到壳体上，促进热传递，并且作为壳体的相对表面之间的热短路。加热器组件被设计成最小化由多层加热器组件的各种部件的热膨胀系数的差异引起的热应力。在本发明的一个实施例中，两个独立供电的加热元件彼此同心地布置以产生双区加热器。内部加热元件和外部加热元件之间的内部芯片的热间隙使这些区域脱耦并在加热器表面提供更可控的温度分布，包括优异的温度均匀性。在一个实施例中，RF隔离器被放置在加热器和支撑轴之间，允许加热器在等离子体工艺中作为电极供电。

3. 发明授权

US5994678A Apparatus for ceramic pedestal and metal shaft assembly 失效
标题翻译：陶瓷基座和金属轴组件的装置
公开(公告)号：US5994678A
公开(公告)日：1999-11-30
申请号：US798004
申请日：1997-02-12
申请人： Jun Zhao , Talex Sajoto , Leonid Selyutin , Charles Dornfest , Stefan Wolff , Lee Luo , Eller Juco
发明人： Jun Zhao , Talex Sajoto , Leonid Selyutin , Charles Dornfest , Stefan Wolff , Lee Luo , Eller Juco
IPC分类号： C23C16/458 , C23C16/46 , C23C16/509 , H05B3/06 , C23C16/00
CPC分类号： C23C16/463 , C23C16/4586 , C23C16/46 , C23C16/5096
摘要： The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400.degree. C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.
摘要翻译：本发明提供了用于从四氯化钛源在半导体衬底上以高达200安培/分钟的速率沉积钛膜的系统，方法和装置。根据本发明的实施例，具有用于底部供电RF能力的集成射频平面的陶瓷加热器组件允许在至少400℃的温度下进行PECVD沉积以用于更有效的等离子体处理。热扼流器将加热器与其支撑轴隔离，减少了加热器两端的热梯度，以减少加热器断裂的危险并改善加热器的温度均匀性。沉积系统包括限流器环和其它特征，其允许通过腔室的15升/分钟的流速具有最小的背侧沉积并且最小化在室的底部上的沉积，从而降低室清洁的频率，并且减少清洁时间和调味料。沉积和清洁过程也是本发明的进一步的实施方案。

4. 发明授权

US5968379A High temperature ceramic heater assembly with RF capability and related methods 失效
标题翻译：具有射频功能的高温陶瓷加热器组件及相关方法
公开(公告)号：US5968379A
公开(公告)日：1999-10-19
申请号：US800096
申请日：1997-02-12
申请人： Jun Zhao , Charles Dornfest , Talex Sajoto , Leonid Selyutin , Stefan Wolff , Lee Luo , Harold Mortensen , Richard Palicka
发明人： Jun Zhao , Charles Dornfest , Talex Sajoto , Leonid Selyutin , Stefan Wolff , Lee Luo , Harold Mortensen , Richard Palicka
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/509 , C23C16/52 , H01L21/00 , H01L21/687 , B23K10/00
CPC分类号： C23C16/4586 , C23C16/45565 , C23C16/5096 , C23C16/52 , H01L21/67103 , H01L21/68785 , H01L21/68792
摘要： The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400.degree. C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.
摘要翻译：本发明提供了用于从四氯化钛源在半导体衬底上以高达200安培/分钟的速率沉积钛膜的系统，方法和装置。根据本发明的实施例，具有用于底部供电RF能力的集成射频平面的陶瓷加热器组件允许在至少400℃的温度下进行PECVD沉积以用于更有效的等离子体处理。热扼流器将加热器与其支撑轴隔离，减少了加热器两端的热梯度，以减少加热器断裂的危险并改善加热器的温度均匀性。沉积系统包括限流器环和其它特征，其允许15升/分钟的流速通过室，具有最小的背侧沉积并且最小化在室底部上的沉积，从而降低室清洁的频率，并且减少清洁时间和调味料。沉积和清洁过程也是本发明的进一步的实施方案。

5. 发明授权

US06179924B2 Heater for use in substrate processing apparatus to deposit tungsten 失效
标题翻译：用于衬底处理装置的加热器以沉积钨
公开(公告)号：US06179924B2
公开(公告)日：2001-01-30
申请号：US09067618
申请日：1998-04-28
申请人： Jun Zhao , Talex Sajoto , Leonid Selyutin
发明人： Jun Zhao , Talex Sajoto , Leonid Selyutin
IPC分类号： C23C1646
CPC分类号： C23C16/45521 , C23C16/14 , C23C16/4586 , C23C16/46 , C23C16/52 , H01L21/67109
摘要： The present invention provides a simplified heater design that is scaleable for equipment processing different diameter substrates and that can efficiently and economically process substrates to meet stringent film requirements such as film uniformity for fabricating high integration devices. The present invention is particularly useful for economically and efficiently producing integrated devices using increasingly larger diameter substrates, such as 12-inch (or 300-mm) diameter and even larger substrates. According to one embodiment, the present invention provides a heater assembly for use in a substrate processing apparatus. The heater assembly includes a metal pedestal including a surface for supporting a substrate, and a resistive heating element disposed in the metal pedestal. The heater assembly also includes a purge gas channel system disposed in the metal pedestal. The purge gas channel system includes a central purge gas inlet located substantially at a center of the metal pedestal. The central purge gas inlet is for providing a purge gas. The purge gas channel system also includes multiple radial purge gas channels radiating from the central purge gas inlet out toward a perimeter of the metal pedestal, and an annular purge gas channel formed in the metal pedestal at the perimeter. The purge gas channels form a substantially symmetric pattern, and each of the purge gas channels are substantially the same length. In a specific embodiment, the assembly includes an annular purge gas channel coupled to the surface via multiple holes near the perimeter to provide a purge guide ring integral to the metal pedestal. Other embodiments of the present invention are also provided.
摘要翻译：本发明提供了一种简化的加热器设计，其可用于设备处理不同直径的基底并且可以有效地和经济地处理基底以满足严格的膜要求，例如用于制造高集成器件的膜均匀性。本发明对于经济地和有效地生产使用越来越大直径的基底（例如12英寸（或300mm）直径和甚至更大的基底）的集成装置特别有用。根据一个实施例，本发明提供一种用于基板处理装置的加热器组件。加热器组件包括金属基座，其包括用于支撑基板的表面和设置在金属基座中的电阻加热元件。加热器组件还包括设置在金属基座中的吹扫气体通道系统。吹扫气体通道系统包括基本上位于金属基座的中心处的中央吹扫气体入口。中央吹扫气体入口用于提供净化气体。吹扫气体通道系统还包括从中央吹扫气体入口向金属基座的周边辐射的多个径向吹扫气体通道，以及形成在金属基座周边的环形吹扫气体通道。吹扫气体通道形成基本上对称的图案，并且每个吹扫气体通道基本上是相同的长度。在具体实施例中，组件包括通过靠近周边的多个孔耦合到表面的环形吹扫气体通道，以提供与金属基座一体的清洗引导环。还提供了本发明的其它实施例。

6. 发明授权

US06099651A Temperature controlled chamber liner 失效
标题翻译：温度控制室内衬
公开(公告)号：US06099651A
公开(公告)日：2000-08-08
申请号：US52765
申请日：1998-03-31
申请人： Talex Sajoto , Jun Zhao , Charles Dornfest , Leonid Selyutin
发明人： Talex Sajoto , Jun Zhao , Charles Dornfest , Leonid Selyutin
IPC分类号： C23C16/52 , C23C16/44 , C23C16/448 , C23C16/455 , H01L21/00 , H01L21/31 , C23C16/00
CPC分类号： C23C16/4409 , C23C16/4401 , C23C16/4412 , C23C16/4481 , C23C16/45561 , C23C16/4557 , H01L21/67017 , H01L21/6715 , Y10S261/65
摘要： The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.
摘要翻译：本发明涉及一种用于蒸发液体前体并将膜沉积在合适基底上的装置和方法。特别考虑的是用于在硅晶片上沉积诸如钡，锶，氧化钛（BST）膜的金属氧化物膜的装置和方法，以使集成电路电容器用于高容量动态存储器模块。

7. 发明授权

US6165271A Temperature controlled process and chamber lid 失效
标题翻译：温度控制过程和室盖
公开(公告)号：US6165271A
公开(公告)日：2000-12-26
申请号：US52763
申请日：1998-03-31
申请人： Jun Zhao , Sasson Somekh , Talex Sajoto , Charles Dornfest , Leonid Selyutin
发明人： Jun Zhao , Sasson Somekh , Talex Sajoto , Charles Dornfest , Leonid Selyutin
IPC分类号： C23C16/52 , C23C16/44 , C23C16/448 , C23C16/455 , H01L21/00 , H01L21/31 , C23C16/00
CPC分类号： C23C16/4409 , C23C16/4401 , C23C16/4412 , C23C16/4481 , C23C16/45561 , C23C16/4557 , H01L21/67017 , H01L21/6715 , Y10S261/65 , Y10T137/87684
摘要： The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.
摘要翻译：本发明涉及一种用于蒸发液体前体并将膜沉积在合适基底上的装置和方法。特别考虑的是用于在硅晶片上沉积诸如钡，锶，氧化钛（BST）膜的金属氧化物膜的装置和方法，以使集成电路电容器用于高容量动态存储器模块。

8. 发明授权

US6056823A Temperature controlled gas feedthrough 失效
标题翻译：温度控制气体馈通
公开(公告)号：US6056823A
公开(公告)日：2000-05-02
申请号：US52885
申请日：1998-03-31
申请人： Talex Sajoto , Leonid Selyutin , Jun Zhao , Charles Dornfest
发明人： Talex Sajoto , Leonid Selyutin , Jun Zhao , Charles Dornfest
IPC分类号： C23C16/52 , C23C16/44 , C23C16/448 , C23C16/455 , H01L21/00 , H01L21/31 , C23C16/00
CPC分类号： C23C16/4409 , C23C16/4401 , C23C16/4412 , C23C16/4481 , C23C16/45561 , C23C16/4557 , H01L21/67017 , H01L21/6715 , Y10S261/65
摘要： The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.
摘要翻译：本发明涉及一种用于蒸发液体前体并将膜沉积在合适基底上的装置和方法。特别考虑的是用于在硅晶片上沉积诸如钡，锶，氧化钛（BST）膜的金属氧化物膜的装置和方法，以使集成电路电容器用于高容量动态存储器模块。

9. 发明授权

US6063199A Temperature controlled liner 失效
标题翻译：温度控制衬管
公开(公告)号：US6063199A
公开(公告)日：2000-05-16
申请号：US52742
申请日：1998-03-31
申请人： Talex Sajoto , Leonid Selyutin , Vincent Ku , Jun Zhao , Charles Dornfest
发明人： Talex Sajoto , Leonid Selyutin , Vincent Ku , Jun Zhao , Charles Dornfest
IPC分类号： C23C16/52 , C23C16/44 , C23C16/448 , C23C16/455 , H01L21/00 , H01L21/31 , C23C16/00
CPC分类号： C23C16/4409 , C23C16/4401 , C23C16/4412 , C23C16/4481 , C23C16/45561 , C23C16/4557 , H01L21/67017 , H01L21/6715 , Y10S261/65
摘要： The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.
摘要翻译：本发明涉及一种用于蒸发液体前体并将膜沉积在合适基底上的装置和方法。特别考虑的是用于在硅晶片上沉积诸如钡，锶，氧化钛（BST）膜的金属氧化物膜的装置和方法，以使集成电路电容器用于高容量动态存储器模块。

10. 发明授权

US06258170B1 Vaporization and deposition apparatus 失效
标题翻译：蒸发沉淀装置及工艺
公开(公告)号：US06258170B1
公开(公告)日：2001-07-10
申请号：US08927700
申请日：1997-09-11
申请人： Sasson Somekh , Jun Zhao , Charles Dornfest , Talex Sajoto , Leonid Selyutin , Vincent Ku , Chris Wang , Frank Chang , Po Tang
发明人： Sasson Somekh , Jun Zhao , Charles Dornfest , Talex Sajoto , Leonid Selyutin , Vincent Ku , Chris Wang , Frank Chang , Po Tang
IPC分类号： C23C1600
CPC分类号： C23C16/4409 , C23C16/4401 , C23C16/4412 , C23C16/4481 , C23C16/45561 , C23C16/4557 , H01L21/67017 , H01L21/6715 , Y10S261/65 , Y10T137/87684
摘要： The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.
摘要翻译：本发明涉及一种用于蒸发液体前体并将膜沉积在合适基底上的装置和方法。特别考虑的是用于在硅晶片上沉积诸如钡，锶，氧化钛（BST）膜的金属氧化物膜的装置和方法，以使集成电路电容器用于高容量动态存储器模块。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式