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1. 发明申请

US20060292816A1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060292816A1
公开(公告)日：2006-12-28
申请号：US11415069
申请日：2006-05-02
申请人： Takumi Mikawa , Toru Nasu
发明人： Takumi Mikawa , Toru Nasu
IPC分类号： H01L21/20 , H01L29/00
CPC分类号： H01L28/55 , H01L27/11502 , H01L27/11507 , H01L28/65 , H01L28/91
摘要： A semiconductor device comprises: an insulating film formed over a semiconductor substrate and having a first recess; a plurality of capacitor elements each of which is composed of a capacitor lower electrode formed on wall and bottom portions of the first recess and having a second recess, a capacitor insulating film of a dielectric film formed on wall and bottom portions of the second recess and having a third recess, and a capacitor upper electrode formed on wall and bottom portions of the third recess; and a conductive layer (referred hereinafter to as a low-resistance conductive layer) which is formed to cover at least portions of the respective capacitor upper electrodes constituting the plurality of capacitor elements and to extend across the plurality of capacitor elements and which has a lower resistance than the capacitor upper electrode.
摘要翻译：半导体器件包括：形成在半导体衬底上并具有第一凹槽的绝缘膜; 多个电容器元件，每个电容器元件由形成在第一凹部的壁和底部上的电容器下电极组成，并具有第二凹部，形成在第二凹部的壁和底部上的电介质膜的电容绝缘膜，具有第三凹部和形成在第三凹部的壁部和底部上的电容器上电极; 以及形成为覆盖构成多个电容器元件的各个电容器上电极的至少一部分并且跨越多个电容器元件并且具有较低电容器元件的导电层（以下称为低电阻导电层）电阻比电容器上电极。

2. 发明申请

US20050045990A1 Semiconductor device and method for fabricating the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050045990A1
公开(公告)日：2005-03-03
申请号：US10950532
申请日：2004-09-28
申请人： Keisaku Nakao , Akihiro Matsuda , Yasufumi Izutsu , Toyoji Ito , Takumi Mikawa , Toru Nasu , Yoshihisa Nagano , Keisuke Tanaka , Toshie Kutsunai
发明人： Keisaku Nakao , Akihiro Matsuda , Yasufumi Izutsu , Toyoji Ito , Takumi Mikawa , Toru Nasu , Yoshihisa Nagano , Keisuke Tanaka , Toshie Kutsunai
IPC分类号： H01L21/02 , H01L21/8242 , H01L21/00
CPC分类号： H01L28/55
摘要： The semiconductor device of the invention includes a capacitor device, which is formed on a substrate and which includes a capacitive lower electrode, a capacitive insulating film made of an insulating metal oxide film and a capacitive upper electrode. An interlevel insulating film having an opening reaching the capacitive upper electrode is formed over the capacitor device. A metal interconnection including a titanium film is formed over the interlevel insulating film so as to be electrically connected to the capacitive upper electrode through the opening. An anti-diffusion film having conductivity is formed between the capacitive upper electrode and the metal interconnection for preventing titanium atoms composing the titanium film of the metal interconnection from passing through the capacitive upper electrode and diffusing into the capacitive insulating film.
摘要翻译：本发明的半导体器件包括形成在基板上的电容器器件，其包括电容式下电极，由绝缘金属氧化物膜制成的电容绝缘膜和电容上电极。在电容器装置上形成具有到达电容上电极的开口的层间绝缘膜。在层间绝缘膜上形成包括钛膜的金属互连，以便通过开口与电容上电极电连接。在电容上电极和金属互连之间形成具有导电性的防扩散膜，以防止构成金属互连的钛膜的钛原子通过电容上电极并扩散到电容绝缘膜。

3. 发明授权

US07304341B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07304341B2
公开(公告)日：2007-12-04
申请号：US11415069
申请日：2006-05-02
申请人： Takumi Mikawa , Toru Nasu
发明人： Takumi Mikawa , Toru Nasu
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L28/55 , H01L27/11502 , H01L27/11507 , H01L28/65 , H01L28/91
摘要： A semiconductor device comprises: an insulating film formed over a semiconductor substrate and having a first recess; a plurality of capacitor elements each of which is composed of a capacitor lower electrode formed on wall and bottom portions of the first recess and having a second recess, a capacitor insulating film of a dielectric film formed on wall and bottom portions of the second recess and having a third recess, and a capacitor upper electrode formed on wall and bottom portions of the third recess; and a conductive layer (referred hereinafter to as a low-resistance conductive layer) which is formed to cover at least portions of the respective capacitor upper electrodes constituting the plurality of capacitor elements and to extend across the plurality of capacitor elements and which has a lower resistance than the capacitor upper electrode.
摘要翻译：半导体器件包括：形成在半导体衬底上并具有第一凹槽的绝缘膜; 多个电容器元件，每个电容器元件由形成在第一凹部的壁和底部上的电容器下电极组成，并具有第二凹部，形成在第二凹部的壁和底部上的电介质膜的电容绝缘膜，具有第三凹部和形成在第三凹部的壁部和底部上的电容器上电极; 以及形成为覆盖构成多个电容器元件的各个电容器上电极的至少一部分并且跨越多个电容器元件并且具有较低电容器元件的导电层（以下称为低电阻导电层）电阻比电容器上电极。

4. 发明授权

US06809000B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06809000B2
公开(公告)日：2004-10-26
申请号：US09797987
申请日：2001-03-05
申请人： Keisaku Nakao , Akihiro Matsuda , Yasufumi Izutsu , Toyoji Ito , Takumi Mikawa , Toru Nasu , Yoshihisa Nagano , Keisuke Tanaka , Toshie Kutsunai
发明人： Keisaku Nakao , Akihiro Matsuda , Yasufumi Izutsu , Toyoji Ito , Takumi Mikawa , Toru Nasu , Yoshihisa Nagano , Keisuke Tanaka , Toshie Kutsunai
IPC分类号： H01L2120
CPC分类号： H01L28/55
摘要： The semiconductor device of the invention includes a capacitor device, which is formed on a substrate and which includes a capacitive lower electrode, a capacitive insulating film made of an insulating metal oxide film and a capacitive upper electrode. An interlevel insulating film having an opening reaching the capacitive upper electrode is formed over the capacitor device. A metal interconnection including a titanium film is formed over the interlevel insulating film so as to be electrically connected to the capacitive upper electrode through the opening. An anti-diffusion film having conductivity is formed between the capacitive upper electrode and the metal interconnection for preventing titanium atoms composing the titanium film of the metal interconnection from passing through the capacitive upper electrode and diffusing into the capacitive insulating film.
摘要翻译：本发明的半导体器件包括形成在基板上的电容器器件，其包括电容式下电极，由绝缘金属氧化物膜制成的电容绝缘膜和电容上电极。在电容器装置上形成具有到达电容上电极的开口的层间绝缘膜。在层间绝缘膜上形成包括钛膜的金属互连，以便通过开口与电容上电极电连接。在电容上电极和金属互连之间形成具有导电性的防扩散膜，以防止构成金属互连的钛膜的钛原子通过电容上电极并扩散到电容绝缘膜。

5. 发明授权

US06239462B1 Semiconductor capacitive device having improved anti-diffusion properties and a method of making the same 失效
标题翻译：具有改进的抗扩散性能的半导体电容器件及其制造方法
公开(公告)号：US06239462B1
公开(公告)日：2001-05-29
申请号：US09120893
申请日：1998-07-23
申请人： Keisaku Nakao , Akihiro Matsuda , Yasufumi Izutsu , Toyoji Ito , Takumi Mikawa , Toru Nasu , Yoshihisa Nagano , Keisuke Tanaka , Toshie Kutsunai
发明人： Keisaku Nakao , Akihiro Matsuda , Yasufumi Izutsu , Toyoji Ito , Takumi Mikawa , Toru Nasu , Yoshihisa Nagano , Keisuke Tanaka , Toshie Kutsunai
IPC分类号： H01L27108
CPC分类号： H01L28/55
摘要： The semiconductor device of the invention includes a capacitor device, which is formed on a substrate and which includes a capacitive lower electrode, a capacitive insulating film made of an insulating metal oxide film and a capacitive upper electrode. An interlevel insulating film having an opening reaching the capacitive upper electrode is formed over the capacitor device. A metal interconnection including a titanium film is formed over the interlevel insulating film so as to be electrically connected to the capacitive upper electrode through the opening. An anti-diffusion film having conductivity is formed between the capacitive upper electrode and the metal interconnection for preventing titanium atoms composing the titanium film of the metal interconnection from passing through the capacitive upper electrode and diffusing into the capacitive insulating film.
摘要翻译：本发明的半导体器件包括形成在基板上的电容器器件，其包括电容式下电极，由绝缘金属氧化物膜制成的电容绝缘膜和电容上电极。在电容器装置上形成具有到达电容上电极的开口的层间绝缘膜。在层间绝缘膜上形成包括钛膜的金属互连，以便通过开口与电容上电极电连接。在电容上电极和金属互连之间形成具有导电性的防扩散膜，以防止构成金属互连的钛膜的钛原子通过电容上电极并扩散到电容绝缘膜。

6. 发明授权

US09252189B2 Nonvolatile semiconductor memory element, nonvolatile semiconductor memory device, and method for manufacturing nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储元件，非易失性半导体存储器件以及用于制造非易失性半导体存储器件的方法
公开(公告)号：US09252189B2
公开(公告)日：2016-02-02
申请号：US13996203
申请日：2012-06-18
申请人： Satoru Fujii , Kiyotaka Tsuji , Takumi Mikawa
发明人： Satoru Fujii , Kiyotaka Tsuji , Takumi Mikawa
IPC分类号： H01L27/24 , H01L45/00 , H01L29/66 , H01L29/872 , H01L27/22
CPC分类号： H01L27/2409 , H01L27/228 , H01L27/2436 , H01L27/2463 , H01L29/66143 , H01L29/872 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1608 , H01L45/1616 , H01L45/1625 , H01L45/1675
摘要： A nonvolatile semiconductor memory element includes: a variable resistance element including a first electrode, a variable resistance layer, and a second electrode, and having a resistance value which changes according to a polarity of an electric pulse applied between the first electrode and the second electrode; and a current steering element which is electrically connected to the variable resistance element, allows a current to flow bidirectionally, and has a nonlinear current-voltage characteristic. The current steering element (i) has a structure in which a first current steering element electrode, a first current steering layer, and a second current steering element electrode are stacked in this order, and (ii) includes a second current steering layer which covers side surfaces of the first current steering element electrode, the first current steering layer, and the second current steering element electrode.
摘要翻译：非易失性半导体存储元件包括：可变电阻元件，包括第一电极，可变电阻层和第二电极，并且具有根据施加在第一电极和第二电极之间的电脉冲的极性而变化的电阻值 ; 并且电连接到可变电阻元件的电流导向元件允许电流双向流动，并且具有非线性电流 - 电压特性。当前的操舵元件（i）具有第一电流导向元件电极，第一电流导向层和第二电流操舵元件电极按此顺序堆叠的结构，（ⅱ）包括覆盖第一电流操舵元件电极，第一电流导向层和第二电流导向元件电极的侧面。

7. 发明授权

US09000506B2 Variable resistance nonvolatile memory element and method for manufacturing the same 有权
标题翻译：可变电阻非易失性存储元件及其制造方法
公开(公告)号：US09000506B2
公开(公告)日：2015-04-07
申请号：US13501624
申请日：2011-11-18
申请人： Takeki Ninomiya , Takumi Mikawa , Yukio Hayakawa
发明人： Takeki Ninomiya , Takumi Mikawa , Yukio Hayakawa
IPC分类号： H01L27/108 , H01L45/00 , H01L27/24
CPC分类号： H01L45/146 , H01L27/2463 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/1675
摘要： A nonvolatile memory element which inhibits deterioration of an oxygen concentration profile of a variable resistance layer due to a thermal budget and is able to stably operate at low voltages, and a method for manufacturing the nonvolatile memory element are provided. The nonvolatile memory element includes a first electrode layer formed above a substrate, a variable resistance layer disposed on the first electrode layer, and a second electrode layer disposed on the variable resistance layer, and the variable resistance layer has a two-layer structure in which an oxygen- and/or nitrogen-deficient tantalum oxynitride layer and a tantalum oxide layer are stacked.
摘要翻译：提供一种非易失性存储元件，其抑制由于热预算导致的可变电阻层的氧浓度分布的劣化，并能够在低电压下稳定地工作，并且提供了一种制造非易失性存储元件的方法。非易失性存储元件包括形成在基板上的第一电极层，设置在第一电极层上的可变电阻层和设置在可变电阻层上的第二电极层，可变电阻层具有两层结构，其中氧和/或氮缺乏的氮氧化钽层和氧化钽层被堆叠。

8. 发明授权

US08796660B2 Nonvolatile memory element comprising a resistance variable element and a diode 有权
标题翻译：非易失性存储元件包括电阻可变元件和二极管
公开(公告)号：US08796660B2
公开(公告)日：2014-08-05
申请号：US12375881
申请日：2007-09-21
申请人： Takeshi Takagi , Takumi Mikawa
发明人： Takeshi Takagi , Takumi Mikawa
IPC分类号： H01L29/02 , H01L47/00 , H01L29/04 , H01L29/06 , H01L29/08 , H01L31/0352 , H01L45/00 , H01L27/24 , H01L27/10 , H01L21/00 , G11C11/00
CPC分类号： H01L45/04 , H01L27/101 , H01L27/2409 , H01L27/2418 , H01L27/2463 , H01L45/1233 , H01L45/1273 , H01L45/146 , H01L45/1683
摘要： A nonvolatile memory element (20) of the present invention comprises a resistance variable element (14) and a diode (18) which are formed on a substrate (10) such that the resistance variable element (14) has a resistance variable layer (11) sandwiched between a lower electrode (12) and an upper electrode (13), and the diode (18) which is connected in series with the resistance variable element (14) in the laminating direction and has an insulating layer or semiconductor layer (15) sandwiched between a first electrode (16) at the lower side and a second electrode (17) at the upper side. The resistance variable layer (11) is embedded in a first contact hole (21) formed on the lower electrode (12). A first area (22) where insulating layer or semiconductor layer (15) of the diode (18) is in contact with a first electrode (16) of the diode (18) is larger than at least one of a second area (23) where the resistance variable layer (11) is in contact with the upper electrode (13) and a third area (24) where the resistance variable layer (11) is in contact with the lower electrode (12).
摘要翻译：本发明的非易失性存储元件（20）包括形成在基板（10）上的电阻可变元件（14）和二极管（18），使得电阻可变元件（14）具有电阻变化层（11 ）和位于下电极（12）和上电极（13）之间的二极管（18），以及与电阻可变元件（14）在层叠方向上串联连接并具有绝缘层或半导体层（15）的二极管）夹在下侧的第一电极（16）和上侧的第二电极（17）之间。电阻变化层（11）嵌入形成在下电极（12）上的第一接触孔（21）中。二极管（18）的绝缘层或半导体层（15）与二极管（18）的第一电极（16）接触的第一区域（22）大于第二区域（23）中的至少一个，其中电阻变化层（11）与上电极（13）接触，电阻变化层（11）与下电极（12）接触的第三区域（24）。

9. 发明申请

US20140197368A1 NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY DEVICE, NONVOLATILE MEMORY ELEMENT MANUFACTURING METHOD, AND NONVOLATILE MEMORY DEVICE MANUFACTURING METHOD 有权
标题翻译：非易失性存储器元件，非易失性存储器件，非易失性存储元件制造方法和非易失性存储器件制造方法
公开(公告)号：US20140197368A1
公开(公告)日：2014-07-17
申请号：US14343441
申请日：2012-09-10
申请人： Shinichi Yoneda , Takumi Mikawa , Satoru Ito , Yukio Hayakawa , Atsushi Himeno
发明人： Shinichi Yoneda , Takumi Mikawa , Satoru Ito , Yukio Hayakawa , Atsushi Himeno
IPC分类号： H01L45/00
CPC分类号： H01L45/124 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/145 , H01L45/146 , H01L45/1608 , H01L45/1625 , H01L45/1675
摘要： A nonvolatile memory element including: a first electrode; a second electrode; a variable resistance layer that is between the first electrode and the second electrode and includes, as stacked layers, a first variable resistance layer connected to the first electrode and a second variable resistance layer connected to the second electrode; and a side wall protecting layer that has oxygen barrier properties and covers a side surface of the variable resistance layer. The first variable resistance layer includes a first metal oxide and a third metal oxide formed around the first metal oxide and having an oxygen deficiency lower than that of the first metal oxide, and the second variable resistance layer includes a second metal oxide having an oxygen deficiency lower than that of the first metal oxide.
摘要翻译：一种非易失性存储元件，包括：第一电极; 第二电极; 在第一电极和第二电极之间的可变电阻层，并且包括作为堆叠层的连接到第一电极的第一可变电阻层和连接到第二电极的第二可变电阻层; 以及具有阻氧性并覆盖可变电阻层的侧面的侧壁保护层。第一可变电阻层包括形成在第一金属氧化物周围的第一金属氧化物和第三金属氧化物，其氧缺陷低于第一金属氧化物，第二可变电阻层包括具有氧缺乏的第二金属氧化物低于第一金属氧化物。

10. 发明申请

US20130270510A1 NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT, NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, AND METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：非易失性半导体存储器元件，非易失性半导体存储器件及其制造非易失性半导体存储器件的方法
公开(公告)号：US20130270510A1
公开(公告)日：2013-10-17
申请号：US13996203
申请日：2012-06-18
申请人： Satoru Fujii , Kiyotaka Tsuji , Takumi Mikawa
发明人： Satoru Fujii , Kiyotaka Tsuji , Takumi Mikawa
IPC分类号： H01L27/24 , H01L45/00
CPC分类号： H01L27/2409 , H01L27/228 , H01L27/2436 , H01L27/2463 , H01L29/66143 , H01L29/872 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1608 , H01L45/1616 , H01L45/1625 , H01L45/1675
摘要： A nonvolatile semiconductor memory element includes: a variable resistance element including a first electrode, a variable resistance layer, and a second electrode, and having a resistance value which changes according to a polarity of an electric pulse applied between the first electrode and the second electrode; and a current steering element which is electrically connected to the variable resistance element, allows a current to flow bidirectionally, and has a nonlinear current-voltage characteristic. The current steering element (i) has a structure in which a first current steering element electrode, a first semiconductor layer, and a second current steering element electrode are stacked in this order, and (ii) includes a second semiconductor layer which covers side surfaces of the first current steering element electrode, the first semiconductor layer, and the second current steering element electrode.
摘要翻译：非易失性半导体存储元件包括：可变电阻元件，包括第一电极，可变电阻层和第二电极，并且具有根据施加在第一电极和第二电极之间的电脉冲的极性而变化的电阻值 ; 并且电连接到可变电阻元件的电流导向元件允许电流双向流动，并且具有非线性电流 - 电压特性。当前的操舵元件（i）具有第一电流操舵元件电极，第一半导体层和第二电流操舵元件电极依次层叠的结构，（ⅱ）包括覆盖侧面的第二半导体层的第一电流操舵元件电极，第一半导体层和第二电流操舵元件电极。

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