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1. 发明申请

US20080035471A1 Silicon object forming method and apparatus 失效
标题翻译：硅体形成方法和装置
公开(公告)号：US20080035471A1
公开(公告)日：2008-02-14
申请号：US11524207
申请日：2006-09-21
申请人： Takashi Mikami , Atsushi Tomyo , Kenji Kato , Eiji Takahashi , Tsukasa Hayashi
发明人： Takashi Mikami , Atsushi Tomyo , Kenji Kato , Eiji Takahashi , Tsukasa Hayashi
IPC分类号： C23C14/00
CPC分类号： C23C14/3457 , C23C14/228 , C23C14/3464 , H01J37/32357 , H01J37/32972 , H01J37/34
摘要： A silicon object formation target substrate is arranged in a first chamber, a silicon sputter target is arranged in a second chamber communicated with the first chamber, plasma for chemical sputtering is formed from a hydrogen gas in the second chamber, chemical sputtering is effected on the silicon sputter target with the plasma thus formed, producing particles contributing to formation of silicon object, whereby a silicon object is formed, on the substrate, from the particles moved from the second chamber to the first chamber.
摘要翻译：硅物体形成目标衬底被布置在第一腔室中，硅溅射靶设置在与第一腔室连通的第二室中，用于化学溅射的等离子体由第二腔室中的氢气形成，化学溅射由此形成等离子体的硅溅射靶，产生有助于硅物体形成的颗粒，由此在从第二室移动到第一室的颗粒的基底上形成硅物体。

2. 发明授权

US07988835B2 Silicon dot forming method and silicon dot forming apparatus 失效
标题翻译：硅点形成方法和硅点形成装置
公开(公告)号：US07988835B2
公开(公告)日：2011-08-02
申请号：US11519154
申请日：2006-09-12
申请人： Eiji Takahashi , Takashi Mikami , Shigeaki Kishida , Kenji Kato , Atsushi Tomyo , Tsukasa Hayashi , Kiyoshi Ogata , Yuichi Setsuhara
发明人： Eiji Takahashi , Takashi Mikami , Shigeaki Kishida , Kenji Kato , Atsushi Tomyo , Tsukasa Hayashi , Kiyoshi Ogata , Yuichi Setsuhara
IPC分类号： C23C14/00 , C23C14/32 , C23C16/00 , C23C16/50
CPC分类号： C23C16/24 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02601 , H01L21/02631
摘要： There are provided a method and an apparatus which form silicon dots having substantially uniform particle diameters and exhibiting a substantially uniform density distribution directly on a substrate at a low temperature. A hydrogen gas (or a hydrogen gas and a silane-containing gas) is supplied into a vacuum chamber (1) provided with a silicon sputter target (e.g., target 30), or the hydrogen gas and the silane-containing gas are supplied into the chamber (1) without arranging the silicon sputter target therein, a high-frequency power is applied to the gas(es) so that plasma is generated such that a ratio (Si(288 nm)/Hβ) between an emission intensity Si(288 nm) of silicon atoms at a wavelength of 288 nm and an emission intensity Hβ of hydrogen atoms at a wavelength of 484 nm in plasma emission is 10.0 or lower, and preferably 3.0 or lower, or 0.5 or lower, and silicon dots (SiD) having particle diameters of 20 nm or lower, or 10 nm or lower are formed directly on the substrate (S) at a low temperature of 500 deg. C. or lower in the plasma (and with chemical sputtering if a silicon sputter target is present).
摘要翻译：提供了形成具有基本上均匀的粒径并且在低温下直接在基底上表现出基本均匀的密度分布的硅点的方法和装置。将氢气（或氢气和含硅烷气体）供给到设置有硅溅射靶（例如，靶30）的真空室（1）中，或者将氢气和含硅烷的气体供应到在不将硅溅射靶设置在其中的腔室（1）中，向气体施加高频功率，从而产生等离子体，使得发射强度Si（288nm）的比率（Si（288nm）/ H＆bgr））（288nm）的波长288nm的硅原子和发光强度H＆bgr; 的等离子体发射波长为484nm的氢原子为10.0以下，优选为3.0以下，或0.5以下，形成粒径为20nm以下或10nm以下的硅点（SiD）在500度的低温下直接在基板（S）上。在等离子体中（如果存在硅溅射靶，则具有化学溅射）。

3. 发明授权

US07887677B2 Silicon object forming method and apparatus 失效
标题翻译：硅体形成方法和装置
公开(公告)号：US07887677B2
公开(公告)日：2011-02-15
申请号：US11524207
申请日：2006-09-21
申请人： Takashi Mikami , Atsushi Tomyo , Kenji Kato , Eiji Takahashi , Tsukasa Hayashi
发明人： Takashi Mikami , Atsushi Tomyo , Kenji Kato , Eiji Takahashi , Tsukasa Hayashi
IPC分类号： C23C14/34
CPC分类号： C23C14/3457 , C23C14/228 , C23C14/3464 , H01J37/32357 , H01J37/32972 , H01J37/34
摘要： A silicon object formation target substrate is arranged in a first chamber, a silicon sputter target is arranged in a second chamber communicated with the first chamber, plasma for chemical sputtering is formed from a hydrogen gas in the second chamber, chemical sputtering is effected on the silicon sputter target with the plasma thus formed, producing particles contributing to formation of silicon object, whereby a silicon object is formed, on the substrate, from the particles moved from the second chamber to the first chamber.
摘要翻译：硅物体形成目标衬底被布置在第一腔室中，硅溅射靶设置在与第一腔室连通的第二室中，用于化学溅射的等离子体由第二腔室中的氢气形成，化学溅射由此形成等离子体的硅溅射靶，产生有助于硅物体形成的颗粒，由此在从第二室移动到第一室的颗粒的基底上形成硅物体。

4. 发明申请

US20070063183A1 Substrate having silicon dots 审中-公开
标题翻译：具有硅点的基板
公开(公告)号：US20070063183A1
公开(公告)日：2007-03-22
申请号：US11523039
申请日：2006-09-19
申请人： Kenji Kato , Atsushi Tomyo , Eiji Takahashi , Takashi Mikami , Tsukasa Hayashi
发明人： Kenji Kato , Atsushi Tomyo , Eiji Takahashi , Takashi Mikami , Tsukasa Hayashi
IPC分类号： H01L31/00 , H01L29/06
CPC分类号： H01L29/127 , B82Y10/00 , B82Y30/00 , C23C14/0057 , C23C14/165 , C23C14/54 , C23C14/564 , H01L21/02422 , H01L21/0245 , H01L21/02488 , H01L21/02505 , H01L21/02513 , H01L21/02532 , H01L21/02601
摘要： A substrate having silicon dots wherein at least one insulating layer and at least one group of silicon dots are formed on a substrate selected from a non-alkali glass substrate and a substrate made of a polymer material.
摘要翻译：具有硅点的基板，其中在选自无碱玻璃基板和由聚合物材料制成的基板的基板上形成至少一个绝缘层和至少一组硅点。

5. 发明申请

US20070056846A1 Silicon dot forming method and silicon dot forming apparatus 审中-公开
标题翻译：硅点形成方法和硅点形成装置
公开(公告)号：US20070056846A1
公开(公告)日：2007-03-15
申请号：US11519967
申请日：2006-09-13
申请人： Eiji Takahashi , Atsushi Tomyo , Kenji Kato , Takashi Mikami , Tsukasa Hayashi
发明人： Eiji Takahashi , Atsushi Tomyo , Kenji Kato , Takashi Mikami , Tsukasa Hayashi
IPC分类号： C23C14/00
CPC分类号： C23C14/3457 , C23C14/14 , C23C14/3414 , C23C14/3471 , C23C14/544 , H01J37/32009 , H01J37/32532
摘要： A substrate is accommodated in a vacuum chamber provided with a silicon sputter target, a sputtering gas (typically a hydrogen gas) is supplied into the vacuum chamber, a high-frequency power is applied to the gas to form plasma in the chamber, a bias voltage is applied to the target for control of chemical sputtering, and the chemical sputtering is effected on the target by the plasma to form silicon dots on the substrate.
摘要翻译：将衬底容纳在设置有硅溅射靶的真空室中，将溅射气体（通常为氢气）供应到真空室中，向气体施加高频电力以在腔室中形成等离子体，偏压电压施加到靶，用于化学溅射的控制，并且通过等离子体在靶上进行化学溅射，以在衬底上形成硅点。

6. 发明申请

US20070007123A1 Silicon dot forming method and silicon dot forming apparatus 失效
标题翻译：硅点形成方法和硅点形成装置
公开(公告)号：US20070007123A1
公开(公告)日：2007-01-11
申请号：US11519154
申请日：2006-09-12
申请人： Eiji Takahashi , Takashi Mikami , Shigeaki Kishida , Kenji Kato , Atsushi Tomyo , Tsukasa Hayashi , Kiyoshi Ogata
发明人： Eiji Takahashi , Takashi Mikami , Shigeaki Kishida , Kenji Kato , Atsushi Tomyo , Tsukasa Hayashi , Kiyoshi Ogata
IPC分类号： C23C14/32 , C23C14/00
CPC分类号： C23C16/24 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02601 , H01L21/02631
摘要： There are provided a method and an apparatus which form silicon dots having substantially uniform particle diameters and exhibiting a substantially uniform density distribution directly on a substrate at a low temperature. A hydrogen gas (or a hydrogen gas and a silane-containing gas) is supplied into a vacuum chamber (1) provided with a silicon sputter target (e.g., target 30), or the hydrogen gas and the silane-containing gas are supplied into the chamber (1) without arranging the silicon sputter target therein, a high-frequency power is applied to the gas(es) so that plasma is generated such that a ratio (Si(288 nm)/Hβ) between an emission intensity Si(288 nm) of silicon atoms at a wavelength of 288 nm and an emission intensity Hβ of hydrogen atoms at a wavelength of 484 nm in plasma emission is 10.0 or lower, and preferably 3.0 or lower, or 0.5 or lower, and silicon dots (SiD) having particle diameters of 20 nm or lower, or 10 nm or lower are formed directly on the substrate (S) at a low temperature of 500 deg. C. or lower in the plasma (and with chemical sputtering if a silicon sputter target is present).
摘要翻译：提供了形成具有基本上均匀的粒径并且在低温下直接在基底上表现出基本均匀的密度分布的硅点的方法和装置。将氢气（或氢气和含硅烷气体）供给到设置有硅溅射靶（例如，靶30）的真空室（1）中，或者将氢气和含硅烷的气体供应到在不将硅溅射靶设置在其中的腔室（1）中，向气体施加高频功率，从而产生等离子体，使得发射强度Si（（（nm）/ Hbeta） 288nm波长的硅原子和等离子体发射波长为484nm的氢原子的发光强度Hbeta为10.0以下，优选为3.0以下，0.5以下，硅点（SiD ），在500度的低温下直接在基板（S）上形成粒径为20nm以下或10nm以下的粒径。在等离子体中（如果存在硅溅射靶，则具有化学溅射）。

7. 发明授权

US06802699B2 Motor mounting structure 失效
标题翻译：电机安装结构
公开(公告)号：US06802699B2
公开(公告)日：2004-10-12
申请号：US10455330
申请日：2003-06-06
申请人： Takashi Mikami , Hiroyuki Kawada
发明人： Takashi Mikami , Hiroyuki Kawada
IPC分类号： F04B1700
CPC分类号： F04D25/082 , F04D29/4226
摘要： A ring-like rib 19 is erected on an inner circumferential edge of an insertion hole 11, which is opened in the scroll casing 1 so that the fan f is inserted therethrough, while a side wall 18 facing the ring-like rib 19 is provided in the bracket 15 blocking the insertion hole 11. A helical groove portion 20 and a protruding portion 21 are formed in one of an outer surface of the side wall 18 and an inner surface of the ring-like rib 19 and in the other thereof, respectively. The bracket 15 is caught in the scroll casing 1 by turning the bracket 15 in a direction opposite to a direction of rotation of said fan f. Further, during the engagement therebetween, a cooling duct 4 is formed.
摘要翻译：环形肋19竖立在插入孔11的内周缘上，该插入孔11在涡旋壳体1中打开，从而风扇f插入其中，而面向环状肋19的侧壁18 在支架15中，阻挡插入孔11.在侧壁18的外表面和环状肋19的内表面之一中形成螺旋槽部20和突出部21，分别。托架15通过沿与所述风扇f的旋转方向相反的方向转动支架15而卡在涡旋壳体1中。此外，在其间的接合期间，形成冷却管道4。

8. 发明授权

US06506292B2 Film forming apparatus 失效
公开(公告)号：US06506292B2
公开(公告)日：2003-01-14
申请号：US09968016
申请日：2001-10-02
申请人： Hiroshi Murakami , Takashi Mikami
发明人： Hiroshi Murakami , Takashi Mikami
IPC分类号： C23C1432
CPC分类号： H01J37/32055 , H01J37/32871 , H01J2237/022
摘要： The vacuum arc evaporation apparatus removes coarse particles from plasma containing cathode materials generated from a cathode 7 provided to a evaporation source 6 by a vacuum arc discharge, and is provided with a porous member 10 on the inside wall of a plasma duct equipped with means for forming deflection magnetic field having a magnetic coil 8 outside thereof so as to guide the plasma in the vicinity of a substrate 11 accommodated in the film forming chamber 1.

9. 发明授权

US5854453A Sound absorbing body, sound absorbing plate, and sound absorbing unit 失效
标题翻译：吸音体，吸音板，吸声单元
公开(公告)号：US5854453A
公开(公告)日：1998-12-29
申请号：US809731
申请日：1997-04-09
申请人： Kyoji Fujiwara , Shinta Yamamura , Naoyuki Furuta , Tadanori Mizukami , Yutaka Tasaki , Takashi Mikami
发明人： Kyoji Fujiwara , Shinta Yamamura , Naoyuki Furuta , Tadanori Mizukami , Yutaka Tasaki , Takashi Mikami
IPC分类号： E01F8/00 , E04B1/82 , E04B1/84 , E04B1/86 , G10K11/16 , G10K11/172
CPC分类号： G10K11/172 , E01F8/0058 , E01F8/007 , E01F8/0082 , E04B1/86 , G10K11/16 , E04B2001/8281 , E04B2001/8414 , E04B2001/8423 , E04B2001/8433 , E04B2001/8442 , E04B2001/8461 , E04B2001/848 , E04B2001/8485 , E04B2001/849 , E04B2001/8495
摘要： To provide a sound absorbing structure having a superior sound absorbing characteristic and an external appearance of the sound absorbing structure which does not cause flicker or the like, by disposal, for example, in the front of an air chamber, a plurality of ribs (2a) are disposed on one surface of the sound absorbing board body (2), and a plurality of through-holes (3) are provided in basal portions (2b) between the ribs (2a) to form a porous structure. Concealing materials (5) are provided between the ribs (2a) of the sound absorbing board body to conceal the through-holes (3), respectively.
摘要翻译： PCT No.PCT / JP95 / 02067 Sec。 371日期1997年04月9日 102（e）日期1997年4月9日PCT提交1995年10月9日PCT公布。出版物WO96 / 11464 日期1996年4月18日为了提供吸音结构，其吸声结构的吸声特性和外观不会产生闪烁等，例如通过处理在空气室的前方，多个肋（2a）设置在吸声板主体（2）的一个表面上，并且在肋（2a）之间的基部（2b）上设置有多个通孔（3），以形成多孔结构。遮蔽材料（5）设置在吸声板主体的肋（2a）之间，以分别隐藏通孔（3）。

10. 发明授权

US5106909A Modified polyolefin-polyester graft copolymer, method of producing same and thermoplastic resin composition containing such graft copolymer 失效
标题翻译：改性聚烯烃 - 聚酯树脂共聚物，其制备方法和含有这种共聚物的热塑性树脂组合物
公开(公告)号：US5106909A
公开(公告)日：1992-04-21
申请号：US420860
申请日：1989-10-13
申请人： Tadahi Sezume , Shigeru Sato , Masahiro Oosawa , Yasuhiko Haraguchi , Takashi Mikami , Takeyoshi Nishio , Toshio Yokoi , Takao Nomura , Nobuya Kawamura
发明人： Tadahi Sezume , Shigeru Sato , Masahiro Oosawa , Yasuhiko Haraguchi , Takashi Mikami , Takeyoshi Nishio , Toshio Yokoi , Takao Nomura , Nobuya Kawamura
IPC分类号： C08G81/02 , C08L23/02 , C08L63/00 , C08L69/00
CPC分类号： C08L23/02 , C08G81/027 , C08L63/00 , C08L69/00
摘要： A modified polyolefin-polyester graft copolymer includes (a) 10-90 parts by weight of a polyester having an intrinsic viscosity [.eta.] of 0.30-1.20 and an end carboxyl group content of 15-200 milliequivalent/kg, and (b) 90-10 parts by weight of a modified polyolefin having 0.2-5 mol % of an epoxy group or carboxyl group content and a weight-average molecular weight of 8,000-140,000.A thermoplastic resin composition includes (a) 5-95 weight % of an aromatic polycarbonate, (b) 95-5 weight % of a polyolefin, and (c) 1-30 parts by weight, per 100 parts by weight of (a)+(b), of the graft copolymer.

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