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1. 发明授权

US07988835B2 Silicon dot forming method and silicon dot forming apparatus 失效
标题翻译：硅点形成方法和硅点形成装置
公开(公告)号：US07988835B2
公开(公告)日：2011-08-02
申请号：US11519154
申请日：2006-09-12
申请人： Eiji Takahashi , Takashi Mikami , Shigeaki Kishida , Kenji Kato , Atsushi Tomyo , Tsukasa Hayashi , Kiyoshi Ogata , Yuichi Setsuhara
发明人： Eiji Takahashi , Takashi Mikami , Shigeaki Kishida , Kenji Kato , Atsushi Tomyo , Tsukasa Hayashi , Kiyoshi Ogata , Yuichi Setsuhara
IPC分类号： C23C14/00 , C23C14/32 , C23C16/00 , C23C16/50
CPC分类号： C23C16/24 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02601 , H01L21/02631
摘要： There are provided a method and an apparatus which form silicon dots having substantially uniform particle diameters and exhibiting a substantially uniform density distribution directly on a substrate at a low temperature. A hydrogen gas (or a hydrogen gas and a silane-containing gas) is supplied into a vacuum chamber (1) provided with a silicon sputter target (e.g., target 30), or the hydrogen gas and the silane-containing gas are supplied into the chamber (1) without arranging the silicon sputter target therein, a high-frequency power is applied to the gas(es) so that plasma is generated such that a ratio (Si(288 nm)/Hβ) between an emission intensity Si(288 nm) of silicon atoms at a wavelength of 288 nm and an emission intensity Hβ of hydrogen atoms at a wavelength of 484 nm in plasma emission is 10.0 or lower, and preferably 3.0 or lower, or 0.5 or lower, and silicon dots (SiD) having particle diameters of 20 nm or lower, or 10 nm or lower are formed directly on the substrate (S) at a low temperature of 500 deg. C. or lower in the plasma (and with chemical sputtering if a silicon sputter target is present).
摘要翻译：提供了形成具有基本上均匀的粒径并且在低温下直接在基底上表现出基本均匀的密度分布的硅点的方法和装置。将氢气（或氢气和含硅烷气体）供给到设置有硅溅射靶（例如，靶30）的真空室（1）中，或者将氢气和含硅烷的气体供应到在不将硅溅射靶设置在其中的腔室（1）中，向气体施加高频功率，从而产生等离子体，使得发射强度Si（288nm）的比率（Si（288nm）/ H＆bgr））（288nm）的波长288nm的硅原子和发光强度H＆bgr; 的等离子体发射波长为484nm的氢原子为10.0以下，优选为3.0以下，或0.5以下，形成粒径为20nm以下或10nm以下的硅点（SiD）在500度的低温下直接在基板（S）上。在等离子体中（如果存在硅溅射靶，则具有化学溅射）。

2. 发明申请

US20080035471A1 Silicon object forming method and apparatus 失效
标题翻译：硅体形成方法和装置
公开(公告)号：US20080035471A1
公开(公告)日：2008-02-14
申请号：US11524207
申请日：2006-09-21
申请人： Takashi Mikami , Atsushi Tomyo , Kenji Kato , Eiji Takahashi , Tsukasa Hayashi
发明人： Takashi Mikami , Atsushi Tomyo , Kenji Kato , Eiji Takahashi , Tsukasa Hayashi
IPC分类号： C23C14/00
CPC分类号： C23C14/3457 , C23C14/228 , C23C14/3464 , H01J37/32357 , H01J37/32972 , H01J37/34
摘要： A silicon object formation target substrate is arranged in a first chamber, a silicon sputter target is arranged in a second chamber communicated with the first chamber, plasma for chemical sputtering is formed from a hydrogen gas in the second chamber, chemical sputtering is effected on the silicon sputter target with the plasma thus formed, producing particles contributing to formation of silicon object, whereby a silicon object is formed, on the substrate, from the particles moved from the second chamber to the first chamber.
摘要翻译：硅物体形成目标衬底被布置在第一腔室中，硅溅射靶设置在与第一腔室连通的第二室中，用于化学溅射的等离子体由第二腔室中的氢气形成，化学溅射由此形成等离子体的硅溅射靶，产生有助于硅物体形成的颗粒，由此在从第二室移动到第一室的颗粒的基底上形成硅物体。

3. 发明授权

US07887677B2 Silicon object forming method and apparatus 失效
标题翻译：硅体形成方法和装置
公开(公告)号：US07887677B2
公开(公告)日：2011-02-15
申请号：US11524207
申请日：2006-09-21
申请人： Takashi Mikami , Atsushi Tomyo , Kenji Kato , Eiji Takahashi , Tsukasa Hayashi
发明人： Takashi Mikami , Atsushi Tomyo , Kenji Kato , Eiji Takahashi , Tsukasa Hayashi
IPC分类号： C23C14/34
CPC分类号： C23C14/3457 , C23C14/228 , C23C14/3464 , H01J37/32357 , H01J37/32972 , H01J37/34
摘要： A silicon object formation target substrate is arranged in a first chamber, a silicon sputter target is arranged in a second chamber communicated with the first chamber, plasma for chemical sputtering is formed from a hydrogen gas in the second chamber, chemical sputtering is effected on the silicon sputter target with the plasma thus formed, producing particles contributing to formation of silicon object, whereby a silicon object is formed, on the substrate, from the particles moved from the second chamber to the first chamber.
摘要翻译：硅物体形成目标衬底被布置在第一腔室中，硅溅射靶设置在与第一腔室连通的第二室中，用于化学溅射的等离子体由第二腔室中的氢气形成，化学溅射由此形成等离子体的硅溅射靶，产生有助于硅物体形成的颗粒，由此在从第二室移动到第一室的颗粒的基底上形成硅物体。

4. 发明申请

US20070063183A1 Substrate having silicon dots 审中-公开
标题翻译：具有硅点的基板
公开(公告)号：US20070063183A1
公开(公告)日：2007-03-22
申请号：US11523039
申请日：2006-09-19
申请人： Kenji Kato , Atsushi Tomyo , Eiji Takahashi , Takashi Mikami , Tsukasa Hayashi
发明人： Kenji Kato , Atsushi Tomyo , Eiji Takahashi , Takashi Mikami , Tsukasa Hayashi
IPC分类号： H01L31/00 , H01L29/06
CPC分类号： H01L29/127 , B82Y10/00 , B82Y30/00 , C23C14/0057 , C23C14/165 , C23C14/54 , C23C14/564 , H01L21/02422 , H01L21/0245 , H01L21/02488 , H01L21/02505 , H01L21/02513 , H01L21/02532 , H01L21/02601
摘要： A substrate having silicon dots wherein at least one insulating layer and at least one group of silicon dots are formed on a substrate selected from a non-alkali glass substrate and a substrate made of a polymer material.
摘要翻译：具有硅点的基板，其中在选自无碱玻璃基板和由聚合物材料制成的基板的基板上形成至少一个绝缘层和至少一组硅点。

5. 发明申请

US20070056846A1 Silicon dot forming method and silicon dot forming apparatus 审中-公开
标题翻译：硅点形成方法和硅点形成装置
公开(公告)号：US20070056846A1
公开(公告)日：2007-03-15
申请号：US11519967
申请日：2006-09-13
申请人： Eiji Takahashi , Atsushi Tomyo , Kenji Kato , Takashi Mikami , Tsukasa Hayashi
发明人： Eiji Takahashi , Atsushi Tomyo , Kenji Kato , Takashi Mikami , Tsukasa Hayashi
IPC分类号： C23C14/00
CPC分类号： C23C14/3457 , C23C14/14 , C23C14/3414 , C23C14/3471 , C23C14/544 , H01J37/32009 , H01J37/32532
摘要： A substrate is accommodated in a vacuum chamber provided with a silicon sputter target, a sputtering gas (typically a hydrogen gas) is supplied into the vacuum chamber, a high-frequency power is applied to the gas to form plasma in the chamber, a bias voltage is applied to the target for control of chemical sputtering, and the chemical sputtering is effected on the target by the plasma to form silicon dots on the substrate.
摘要翻译：将衬底容纳在设置有硅溅射靶的真空室中，将溅射气体（通常为氢气）供应到真空室中，向气体施加高频电力以在腔室中形成等离子体，偏压电压施加到靶，用于化学溅射的控制，并且通过等离子体在靶上进行化学溅射，以在衬底上形成硅点。

6. 发明申请

US20070007123A1 Silicon dot forming method and silicon dot forming apparatus 失效
标题翻译：硅点形成方法和硅点形成装置
公开(公告)号：US20070007123A1
公开(公告)日：2007-01-11
申请号：US11519154
申请日：2006-09-12
申请人： Eiji Takahashi , Takashi Mikami , Shigeaki Kishida , Kenji Kato , Atsushi Tomyo , Tsukasa Hayashi , Kiyoshi Ogata
发明人： Eiji Takahashi , Takashi Mikami , Shigeaki Kishida , Kenji Kato , Atsushi Tomyo , Tsukasa Hayashi , Kiyoshi Ogata
IPC分类号： C23C14/32 , C23C14/00
CPC分类号： C23C16/24 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02601 , H01L21/02631
摘要： There are provided a method and an apparatus which form silicon dots having substantially uniform particle diameters and exhibiting a substantially uniform density distribution directly on a substrate at a low temperature. A hydrogen gas (or a hydrogen gas and a silane-containing gas) is supplied into a vacuum chamber (1) provided with a silicon sputter target (e.g., target 30), or the hydrogen gas and the silane-containing gas are supplied into the chamber (1) without arranging the silicon sputter target therein, a high-frequency power is applied to the gas(es) so that plasma is generated such that a ratio (Si(288 nm)/Hβ) between an emission intensity Si(288 nm) of silicon atoms at a wavelength of 288 nm and an emission intensity Hβ of hydrogen atoms at a wavelength of 484 nm in plasma emission is 10.0 or lower, and preferably 3.0 or lower, or 0.5 or lower, and silicon dots (SiD) having particle diameters of 20 nm or lower, or 10 nm or lower are formed directly on the substrate (S) at a low temperature of 500 deg. C. or lower in the plasma (and with chemical sputtering if a silicon sputter target is present).
摘要翻译：提供了形成具有基本上均匀的粒径并且在低温下直接在基底上表现出基本均匀的密度分布的硅点的方法和装置。将氢气（或氢气和含硅烷气体）供给到设置有硅溅射靶（例如，靶30）的真空室（1）中，或者将氢气和含硅烷的气体供应到在不将硅溅射靶设置在其中的腔室（1）中，向气体施加高频功率，从而产生等离子体，使得发射强度Si（（（nm）/ Hbeta） 288nm波长的硅原子和等离子体发射波长为484nm的氢原子的发光强度Hbeta为10.0以下，优选为3.0以下，0.5以下，硅点（SiD ），在500度的低温下直接在基板（S）上形成粒径为20nm以下或10nm以下的粒径。在等离子体中（如果存在硅溅射靶，则具有化学溅射）。

7. 发明申请

US20070007128A1 Silicon film forming apparatus 审中-公开
标题翻译：硅膜形成装置
公开(公告)号：US20070007128A1
公开(公告)日：2007-01-11
申请号：US11519132
申请日：2006-09-12
申请人： Atsushi Tomyo , Eiji Takahashi , Masaki Fujiwara , Takashi Kotera , Masatoshi Onoda
发明人： Atsushi Tomyo , Eiji Takahashi , Masaki Fujiwara , Takashi Kotera , Masatoshi Onoda
IPC分类号： C23C14/00 , C23C16/00
CPC分类号： H01J37/321 , C23C14/165 , C23C14/3471
摘要： A silicon film forming apparatus includes a deposition chamber (10), a silicon sputter target (2) arranged in the chamber, a hydrogen gas supply circuit (102 or 102′) supplying a hydrogen gas into the chamber, and a high-frequency power applying device (antenna 1, 1′, power source PW and others) generating inductively coupled plasma by applying high-frequency power to the gas supplied into the deposition chamber (10). Chemical sputtering is effected on the target (2) by the plasma to form a silicon film on a substrate S. A silane gas may be used. A silane gas supply circuit (101) may be provided with a gas reservoir unit (GR). The silicon film can be formed inexpensively and fast at a relatively low temperature.
摘要翻译：硅膜形成装置包括沉积室（10），布置在室中的硅溅射靶（2），将氢气供应到室中的氢气供应电路（102或102'）和高频功率通过向供应到沉积室（10）的气体施加高频电力来产生电感耦合等离子体的施加装置（天线1,1'，电源PW等）。通过等离子体在靶（2）上进行化学溅射，以在衬底S上形成硅膜。可以使用硅烷气体。硅烷气体供给回路（101）也可以设置有气体储存部（GR）。硅膜可以在相对较低的温度下廉价且快速地形成。

8. 发明申请

US20070158182A1 Silicon dot forming method and apparatus 审中-公开
标题翻译：硅点形成方法和装置
公开(公告)号：US20070158182A1
公开(公告)日：2007-07-12
申请号：US11524450
申请日：2006-09-21
申请人： Eiji Takahashi , Atsushi Tomyo
发明人： Eiji Takahashi , Atsushi Tomyo
IPC分类号： C08J7/18 , C23C14/00 , C23C16/00
CPC分类号： C23C14/165 , C23C14/0057 , C23C14/04 , C23C14/54 , C23C14/5806
摘要： A silicon sputter target is arranged in a silicon dot forming chamber, and a silicon dot formation target substrate is arranged in the chamber. Plasma is formed from a sputtering gas (typically a hydrogen gas) supplied into the chamber, and chemical sputtering is effected on the target with the plasma thus formed to form silicon dots on the substrate S. Optionally, with the plasma formed from a hydrogen gas and a silane-containing gas at a plasma emission intensity ratio (Si(288 nm)/Hβ) of 10.0 or lower, the silicon dots are formed on the substrate S. The silicon dots are terminally treated with the plasma derived from a terminally treating gas such as an oxygen gas.
摘要翻译：在硅点形成室内配置有硅溅射靶，在该室内配置硅点形成对象基板。等离子体由提供到室中的溅射气体（通常为氢气）形成，并且由此形成的等离子体在靶上进行化学溅射，以在衬底S上形成硅点。可选地，由于由氢气形成的等离子体和等离子体发射强度比（Si（288nm）/ Hbeta）的含硅烷的气体的摩尔比为10.0以下，在基板S上形成硅点。利用来自末端处理气体如氧气。

9. 发明申请

US20120211351A1 METHOD AND APPARATUS FOR FORMING SILICON DOTS AND METHOD AND APPARATUS FOR FORMING A SUBSTRATE WITH SILICON DOTS AND INSULATING FILM 审中-公开
标题翻译：用于形成硅酮的方法和装置以及用于形成具有硅氧烷和绝缘膜的基板的方法和装置
公开(公告)号：US20120211351A1
公开(公告)日：2012-08-23
申请号：US12513361
申请日：2007-10-29
申请人： Atsushi Tomyo , Hirokazu Kaki , Eiji Takahashi
发明人： Atsushi Tomyo , Hirokazu Kaki , Eiji Takahashi
IPC分类号： C23C14/34
CPC分类号： H01L21/02631 , B82Y10/00 , C23C14/185 , C23C14/5853 , C23C14/586 , C23C16/24 , C23C16/509 , C23C16/56 , H01J37/321 , H01L21/02532 , H01L21/0259 , H01L21/0262 , H01L29/40114 , H01L29/42332 , H01L29/7881
摘要： Silicon dots are formed at a relatively low temperature, while suppressing occurrence of defects and clustering of silicon dots and damages caused by plasma, with high controllability of particle diameter and high reproducibility between substrates. Moreover, silicon dots and insulating film are formed at a relatively low temperature, with high controllability of the particle diameter of the silicon dots, high controllability of the thickness of the insulating film and high reproducibility between substrates. A method and an apparatus 1 for forming silicon dots (method and apparatus A for forming a substrate with silicon dots and insulating film) in which inductively coupled plasma is produced by an internal antenna 12 (22) with low inductance from a gas for forming silicon dots (a gas for forming insulating film); silicon dots SiD (insulating film F) are formed on a substrate S in the inductively coupled plasma; the substrate S is placed in a state that it is not exposed to unstable plasma when the plasma is in an unstable state; and the substrate S is exposed to stabilized plasma when the plasma is stabilized to start formation of the silicon dots (formation of insulating film).
摘要翻译：在相对较低的温度下形成硅点，同时抑制硅点的缺陷发生和硅点聚集以及由等离子体引起的损伤，具有高的粒径可控性和基板之间的高再现性。此外，在相对低的温度下形成硅点和绝缘膜，硅点的粒径可控性高，绝缘膜的厚度可控性高，基板间的再现性高。用于形成硅点的方法和装置1（用于形成具有硅点和绝缘膜的衬底的方法和装置A），其中由用于形成硅的气体的低电感的内部天线12（22）产生电感耦合等离子体点（用于形成绝缘膜的气体）; 在感应耦合等离子体的基板S上形成硅点SiD（绝缘膜F）当等离子体处于不稳定状态时，衬底S被置于不暴露于不稳定的等离子体的状态; 并且当等离子体稳定以开始形成硅点（形成绝缘膜）时，将基板S暴露于稳定的等离子体。

10. 发明申请

US20100260944A1 METHOD FOR FORMING SILICON DOTS 审中-公开
标题翻译：形成硅胶的方法
公开(公告)号：US20100260944A1
公开(公告)日：2010-10-14
申请号：US12739982
申请日：2008-10-14
申请人： Atsushi Tomyo , Hirokazu Kaki , Eiji Takahashi
发明人： Atsushi Tomyo , Hirokazu Kaki , Eiji Takahashi
IPC分类号： C23C16/505 , C23C16/24
CPC分类号： H01L21/02381 , C01B33/02 , C23C16/0245 , C23C16/04 , C23C16/24 , C23C16/509 , H01L21/02532 , H01L21/02601 , H01L21/0262 , H01L21/02658
摘要： A method for forming silicon dots which can form silicon dots at a relatively low temperature, with good controllability of the particle diameter of silicon dots depending on the particle diameter of silicon dots to be formed.The method for forming silicon dots comprises producing inductively coupled plasma from a gas for forming silicon dots provided within the plasma producing chamber by applying a high-frequency power to an antenna with reduced inductance placed within the plasma producing chamber to form silicon dots on a substrate S disposed within the chamber in the presence of the inductively coupled plasma. Conditions for a pretreatment of the substrate prior to the formation of silicon dots, the temperature of the substrate in forming silicon dots and the gas pressure in the plasma producing chamber during the formation of silicon dots are controlled depending on the particle diameter of the silicon dots.
摘要翻译：一种在相对较低的温度下形成硅点的硅点的形成方法，具有良好的硅点粒径的可控性，这取决于待形成的硅点的粒径。形成硅点的方法包括：通过向位于等离子体产生室内的具有减小的电感的天线施加高频电力，在等离子体产生室内形成硅点的气体中产生电感耦合等离子体，以在衬底上形成硅点 S在电感耦合等离子体的存在下设置在腔室内。在形成硅点之前对基板进行预处理的条件，形成硅点的基板的温度和形成硅点期间的等离子体产生室中的气体压力根据硅点的粒径来控制。

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