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1. 发明专利

JP2009267261A Thin film manufacturing apparatus, thin film manufacturing method, thin film solar cell manufacturing apparatus, and thin film solar cell manufacturing method 审中-公开
标题翻译：薄膜制造设备，薄膜制造方法，薄膜太阳能电池制造设备和薄膜太阳能电池制造方法
公开(公告)号：JP2009267261A
公开(公告)日：2009-11-12
申请号：JP2008117733
申请日：2008-04-28
申请人： Ebatekku:Kk , Yuichi Setsuhara , 株式会社エバテック , 裕一節原
发明人： SETSUHARA YUICHI , INO EIJI , ISHIHARA SHUNICHI , WATANABE AKIRA
IPC分类号： H01L21/205 , C23C16/455 , C23C16/509 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a thin film manufacturing apparatus capable of suppressing mixing of an undesired impurity. SOLUTION: The thin film manufacturing apparatus includes a vacuum container 11, a high-frequency antenna 13 provided in the vacuum container 11, a substrate holding unit 19 provided in the vacuum container 11 apart from the high frequency antenna 13, a plasma generating gas supply port 14 provided nearby the high frequency antenna 13, a main material gas supply port 15 provided between the plasma generating gas supply port 14 and substrate S, and doping gas supply ports 16 and 17 provided between the plasma generating gas supply port 14 and substrate S and between the main material gas supply port 15 and substrate S. The doping gas supply ports 16 and 17 are closest to the substrate S and then a doping gas is prevented from flowing backward to the antenna side, so a doping atom is prevented from sticking on the antenna etc. Consequently, the mixing of an undesired doping material as an impurity is suppressed. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够抑制不期望的杂质的混合的薄膜制造装置。解决方案：薄膜制造装置包括真空容器11，设置在真空容器11中的高频天线13，设置在远离高频天线13的真空容器11中的基板保持单元19，等离子体设置在高频天线13附近的发生气体供给口14，设置在等离子体产生气体供给口14和基板S之间的主材料气体供给口15以及设置在等离子体产生气体供给口14之间的掺杂气体供给口16,17 基板S和主材料气体供给口15与基板S之间。掺杂气体供给口16,17最靠近基板S，然后防止掺杂气体向后流向天线侧，因此掺杂原子为防止粘附在天线等上。因此，抑制了作为杂质的不需要的掺杂材料的混合。版权所有（C）2010，JPO＆INPIT

2. 发明授权

US09078336B2 Radio-frequency antenna unit and plasma processing apparatus 有权
标题翻译：射频天线单元和等离子体处理装置
公开(公告)号：US09078336B2
公开(公告)日：2015-07-07
申请号：US12921063
申请日：2009-03-03
申请人： Yuichi Setsuhara , Akinori Ebe
发明人： Yuichi Setsuhara , Akinori Ebe
IPC分类号： H01Q1/36 , H05H1/46 , H01J37/32
CPC分类号： H05H1/46 , H01J37/321 , H01J37/3211
摘要： The present invention aims at providing a radio-frequency antenna unit capable of generating a high-density discharge plasma in a vacuum chamber. The radio-frequency antenna unit according to the present invention includes: a radio-frequency antenna through which a radio-frequency electric current can flow; a protective tube made of an insulator provided around the portion of the radio-frequency antenna that is in the vacuum chamber; and a buffer area provided between the radio-frequency antenna and the protective tube. The “buffer area” refers to an area where an acceleration of electrons is suppressed, and it can be formed, for example, with a vacuum or an insulator. Such a configuration can suppress an occurrence of an electric discharge between the antenna and the protective tube, enabling the generation of a high-density discharge plasma in the vacuum chamber.
摘要翻译：本发明旨在提供一种能够在真空室中产生高密度放电等离子体的射频天线单元。根据本发明的射频天线单元包括：射频电天线可以流过的射频天线; 由位于真空室内的射频天线部分周围设置的保护管，以及设置在射频天线与保护管之间的缓冲区。 “缓冲区”是指抑制电子加速的区域，例如可以用真空或绝缘体形成。这样的结构可以抑制天线与保护管之间的放电的发生，能够在真空室中产生高密度放电等离子体。

3. 发明授权

US08916034B2 Thin-film forming sputtering system 有权
标题翻译：薄膜形成溅射系统
公开(公告)号：US08916034B2
公开(公告)日：2014-12-23
申请号：US13059318
申请日：2009-08-25
申请人： Yuichi Setsuhara , Akinori Ebe , Jeon Geon Han
发明人： Yuichi Setsuhara , Akinori Ebe , Jeon Geon Han
IPC分类号： C23C14/35 , H01J37/34 , H01J37/32 , C23C14/34
CPC分类号： H01J37/3408 , C23C14/3407 , C23C14/358 , H01J37/321 , H01J37/3211 , H01J37/3411 , H01J37/3417
摘要： A thin-film forming sputtering system capable of a sputtering process at a high rate. A thin-film forming sputtering system includes: a vacuum container; a target holder located inside the vacuum container; a target holder located inside the vacuum container; a substrate holder opposed to the target holder; a power source for applying a voltage between the target holder and the substrate holder; a magnetron-sputtering magnet provided behind the target holder, for generating a magnetic field having a component parallel to a target; and radio-frequency antennae for generating radio-frequency inductively-coupled plasma within a space in the vicinity of the target where the magnetic field generated by the magnetron-sputtering magnet has a strength equal to or higher than a predetermined level. The radio-frequency inductively-coupled plasma generated by the radio-frequency antennae promotes the supply of electrons into the aforementioned magnetic field, so that the sputtering process can be performed at a high rate.
摘要翻译：能够高速溅射工艺的薄膜形成溅射系统。薄膜形成溅射系统包括：真空容器; 位于真空容器内的目标支架; 位于真空容器内的目标支架; 与靶保持器相对的衬底保持器; 用于在所述目标保持器和所述基板保持器之间施加电压的电源; 设置在目标支架后面的磁控溅射磁体，用于产生具有平行于目标的分量的磁场; 以及用于在由磁控溅射磁体产生的磁场具有等于或高于预定水平的强度的目标附近的空间内产生射频感应耦合等离子体的射频天线。由射频天线产生的射频感应耦合等离子体促进电子向上述磁场的供给，从而可以高速率进行溅射处理。

4. 发明申请

US20120031562A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20120031562A1
公开(公告)日：2012-02-09
申请号：US13255200
申请日：2010-03-10
申请人： Yuichi Setsuhara , Akinori Ebe
发明人： Yuichi Setsuhara , Akinori Ebe
IPC分类号： C23F1/08
CPC分类号： H01J37/321 , H01J37/3211 , H01J37/32477 , H05H1/46 , H05H2001/4667
摘要： The present invention provides a plasma processing device capable of inducing a strong radio-frequency electric field within a vacuum container while preventing sputtering of the antenna conductor, an increase in the temperature of the antenna conductor and the formation of particles. A plasma processing device according to the present invention includes a vacuum container, a radio-frequency antenna placed between an inner surface and an outer surface of a wall of the vacuum container, and a dielectric separating member for separating the radio-frequency antenna from an internal space of the vacuum container. As compared to a device using an external antenna, the present device can induce a stronger magnetic field in the vacuum container. The separating member has the effects of preventing the radio-frequency antenna from undergoing sputtering by the plasma produced in the vacuum container, suppressing an increase in the temperature of the radio-frequency antenna, and preventing the formation of particles.
摘要翻译：本发明提供一种等离子体处理装置，其能够在防止天线导体的溅射，天线导体的温度升高和颗粒的形成的同时在真空容器内产生强的射频电场。根据本发明的等离子体处理装置包括真空容器，放置在真空容器的壁的内表面和外表面之间的射频天线以及用于将射频天线与真空容器的内部空间。与使用外部天线的装置相比，本装置可以在真空容器中引起更强的磁场。分离部件具有防止射频天线由真空容器内产生的等离子体进行溅射，抑制高频天线的温度上升，防止形成粒子的效果。

5. 发明申请

US20060057854A1 High frequency power supply device and plasma generator 有权
公开(公告)号：US20060057854A1
公开(公告)日：2006-03-16
申请号：US10542289
申请日：2004-01-15
申请人： Yuichi Setsuhara , Tatsuo Shoji , Masayoshi Kamai
发明人： Yuichi Setsuhara , Tatsuo Shoji , Masayoshi Kamai
IPC分类号： H01L21/302
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/321 , H01J37/3299 , H05H1/46
摘要： A high frequency power supplying device and a plasma generation device using the same includes: two or more inductive antennas; high frequency power sources, respectively supplying power to the antennas; and a vacuum chamber on which the antennas are provided so as to generate a plasma by inductive coupling with high frequency power, wherein each of the high frequency power sources is positioned close to a corresponding antenna. On this account, it is possible to reduce unevenness in high frequency voltages generated in the antennas. Thus, even when a diameter and a volume of the plasma generation section are made larger, it is possible to generate much more uniform plasma, thereby stabilizing (i) thin film formation processes based on the plasma and (ii) plasma ion implantation processes.

6. 发明授权

US08931433B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08931433B2
公开(公告)日：2015-01-13
申请号：US12742604
申请日：2008-11-12
申请人： Yuichi Setsuhara , Akinori Ebe , Eiji Ino , Shinichiro Ishihara , Hajime Ashida , Akira Watanabe
发明人： Yuichi Setsuhara , Akinori Ebe , Eiji Ino , Shinichiro Ishihara , Hajime Ashida , Akira Watanabe
IPC分类号： C23C16/505 , C23C16/503 , C03C17/22 , C23C16/24 , C23C16/509 , H01J37/32
CPC分类号： C23C16/503 , C03C17/22 , C03C2217/28 , C03C2218/153 , C23C16/24 , C23C16/509 , H01J37/321 , H01J37/3211 , H01J37/32715
摘要： The present invention aims at providing a plasma processing apparatus for performing a plasma processing on a planar substrate body to be processed, the apparatus being capable of generating the plasma with good uniformity and efficiently using the plasma, and having a high productivity. That is, the plasma processing apparatus according to the present invention includes: a vacuum chamber; one or plural antenna supporters (plasma generator supporters) projecting into the internal space of the vacuum chamber; radio-frequency antennas (plasma generators) attached to each antenna supporter; and a pair of substrate body holders provided across the antenna supporter in the vacuum chamber, for holding a planar substrate body to be processed.
摘要翻译：本发明的目的在于提供一种等离子体处理装置，用于对待处理的平面基板主体进行等离子体处理，该装置能够产生均匀性均匀且有效地使用等离子体的等离子体，并且具有高生产率。也就是说，根据本发明的等离子体处理装置包括：真空室; 一个或多个天线支撑器（等离子体发生器支撑器）突出到真空室的内部空间中; 连接到每个天线支架的射频天线（等离子体发生器）; 以及设置在真空室中的天线支撑体两侧的一对基板主体保持件，用于保持待处理的平面基板主体。

7. 发明申请

US20130220548A1 PLASMA PROCESSING DEVICE 审中-公开
标题翻译：等离子体加工装置
公开(公告)号：US20130220548A1
公开(公告)日：2013-08-29
申请号：US13821822
申请日：2011-09-09
申请人： Yuichi Setsuhara , Akinori Ebe
发明人： Yuichi Setsuhara , Akinori Ebe
IPC分类号： H05H1/46
CPC分类号： H05H1/46 , C23C16/507 , H01J37/321 , H01J37/3211 , H01J37/32119 , H01J37/32477 , H05H2001/4667
摘要： A plasma processing device has: a metallic vacuum chamber; an antenna-placing section in which a radio-frequency antenna is placed inside a through-hole (hollow space) provided in an upper wall of the vacuum chamber; and a dielectric separating plate covering the entire inner surface of the upper wall. In this plasma processing device, the entire inner surface side of the upper wall is covered with the separating plate so that surfaces in different level otherwise formed when a smaller separating plate is used is not formed between the inner surface and the separating plate. Therefore, the generation of particles caused by the formation of adhered materials on the surfaces in different level is prevented.
摘要翻译：等离子体处理装置具有：金属真空室; 天线放置部分，其中射频天线放置在设置在真空室的上壁中的通孔（中空空间）内; 以及覆盖上壁的整个内表面的绝缘分离板。在该等离子体处理装置中，上壁的整个内表面侧被分隔板覆盖，使得在内表面和分离板之间不形成使用较小分离板时形成的不同高度的表面。因此，防止了由不同程度的表面形成粘附材料引起的颗粒的产生。

8. 发明授权

US08444806B2 Plasma generator, plasma control method and method of producing substrate 有权
标题翻译：等离子体发生器，等离子体控制方法及其制造方法
公开(公告)号：US08444806B2
公开(公告)日：2013-05-21
申请号：US12836161
申请日：2010-07-14
申请人： Shoji Miyake , Akinori Ebe , Tatsuo Shoji , Yuichi Setsuhara
发明人： Shoji Miyake , Akinori Ebe , Tatsuo Shoji , Yuichi Setsuhara
IPC分类号： C23C16/00 , C23C15/00 , H01L21/306 , H05H1/24
CPC分类号： H01J37/321 , H05H1/46 , H05H2001/4667
摘要： The present invention aims to provide a plasma generator capable of creating a spatially uniform distribution of high-density plasma. This object is achieved by the following construction. Multiple antennas are located on the sidewall of a vacuum chamber, and a RF power source is connected to three or four antennas in parallel via a plate-shaped conductor. The length of the conductor of each antenna is shorter than the quarter wavelength of the induction electromagnetic wave generated within the vacuum chamber. Setting the length of the conductor of the antenna in such a manner prevents the occurrence of a standing wave and thereby maintains the uniformity of the plasma within the vacuum chamber. In addition, the plate-shaped conductor improves the heat-releasing efficiency, which also contributes to the suppression of the impedance.
摘要翻译：本发明的目的在于提供能够产生高密度等离子体的空间均匀分布的等离子体发生器。该目的通过以下结构实现。多个天线位于真空室的侧壁上，RF电源经由板状导体并联连接到三个或四个天线。每个天线的导体长度比真空室内产生的感应电磁波的四分之一波长短。以这种方式设置天线的导体的长度防止驻波的发生，从而保持等离子体在真空室内的均匀性。此外，板状导体提高了散热效率，这也有助于抑制阻抗。

9. 发明申请

US20120031563A1 PLASMA PROCESSING DEVICE 审中-公开
标题翻译：等离子体加工装置
公开(公告)号：US20120031563A1
公开(公告)日：2012-02-09
申请号：US13255319
申请日：2010-03-10
申请人： Yuichi Setsuhara , Eiichi Nishimura , Akinori Ebe
发明人： Yuichi Setsuhara , Eiichi Nishimura , Akinori Ebe
IPC分类号： C23F1/08
CPC分类号： H01J37/3211 , H01J37/321
摘要： An inductively coupled plasma processing device using a radio-frequency electric discharge, including: a vacuum container; an antenna-placing section provided between an inner surface and an outer surface of a wall of the vacuum container; a radio-frequency antenna placed in the antenna-placing section, the radio-frequency antenna being terminated without completing one turn; and a dielectric separating member separating the antenna-placing section and an internal space of the vacuum container, wherein the radio-frequency antenna has a length equal to or shorter than one quarter of a wavelength of the radio-frequency waves.
摘要翻译：一种使用射频放电的电感耦合等离子体处理装置，包括：真空容器; 设置在真空容器的壁的内表面和外表面之间的天线放置部分; 放置在天线放置部中的射频天线，射频天线终止而不完成一匝; 以及分离所述天线放置部和所述真空容器的内部空间的电介质分离部件，其中，所述射频天线的长度等于或短于所述射频波长的四分之一。

10. 发明授权

US07785441B2 Plasma generator, plasma control method, and method of producing substrate 有权
标题翻译：等离子体发生器，等离子体控制方法和生产基板的方法
公开(公告)号：US07785441B2
公开(公告)日：2010-08-31
申请号：US10539254
申请日：2003-12-12
申请人： Shoji Miyake , Akinori Ebe , Tatsuo Shoji , Yuichi Setsuhara
发明人： Shoji Miyake , Akinori Ebe , Tatsuo Shoji , Yuichi Setsuhara
IPC分类号： H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： H01J37/321 , H05H1/46 , H05H2001/4667
摘要： The present invention aims to provide a plasma generator capable of creating a spatially uniform distribution of high-density plasma. This object is achieved by the following construction. Multiple antennas 16 are located on the sidewall of a vacuum chamber 11, and a RF power source is connected to three or four antennas 16 in parallel via a plate-shaped conductor 19. The length of the conductor of each antenna 16 is shorter than the quarter wavelength of the induction electromagnetic wave generated within the vacuum chamber. Setting the length of the conductor of the antenna in such a manner prevents the occurrence of a standing wave and thereby maintains the uniformity of the plasma within the vacuum chamber. In addition, the plate-shaped conductor 19 improves the heat-releasing efficiency, which also contributes to the suppression of the impedance.
摘要翻译：本发明的目的在于提供能够产生高密度等离子体的空间均匀分布的等离子体发生器。该目的通过以下结构实现。多个天线16位于真空室11的侧壁上，RF电源通过板状导体19并联连接到三个或四个天线16.每个天线16的导体的长度比在真空室内产生的感应电磁波的四分之一波长。以这种方式设置天线的导体的长度防止驻波的发生，从而保持等离子体在真空室内的均匀性。此外，板状导体19提高散热效率，这也有助于抑制阻抗。

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