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1. 发明授权

US5889696A Thin-film capacitor device and RAM device using ferroelectric film 失效
标题翻译：薄膜电容器和使用铁电薄膜的RAM器件
公开(公告)号：US5889696A
公开(公告)日：1999-03-30
申请号：US45958
申请日：1998-03-23
申请人： Takashi Kawakubo , Noburu Fukushima , Kazuhide Abe
发明人： Takashi Kawakubo , Noburu Fukushima , Kazuhide Abe
IPC分类号： H01L27/10 , G11C11/22 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108
CPC分类号： G11C11/22
摘要： A semiconductor memory device is constituted by arranging a plurality of memory cells in a matrix format, each of which includes a thin-film capacitor having a ferroelectric film and a pair of electrodes facing each other via the ferroelectric film, and a transfer gate transistor connected to the thin film capacitor. A voltage corresponding to the width of a hysteresis curve obtained when the thin-film capacitor is saturated and polarized falls within the range of 5% or higher to 20% or lower of the voltage difference between the positive and negative directions in a writing operation. A remanent polarization amount obtained when the thin-film capacitor is saturated and polarized falls within the range of 5% or higher to 30% or lower of the total polarization amount obtained upon application of a voltage in the writing operation.
摘要翻译：半导体存储器件通过以矩阵形式布置多个存储单元而构成，每个存储单元包括具有铁电膜的薄膜电容器和经由铁电体膜相互面对的一对电极，并且连接有传输栅极晶体管到薄膜电容器。当薄膜电容器饱和和极化时获得的滞后曲线的宽度对应的电压落在写入操作中正负方向之间的电压差的5％以上至20％以下的范围内。当薄膜电容器饱和和极化时获得的剩余极化量落在在写入操作中施加电压时获得的总极化量的5％以上至30％以下的范围内。

2. 发明授权

US5889299A Thin film capacitor 失效
标题翻译：薄膜电容器
公开(公告)号：US5889299A
公开(公告)日：1999-03-30
申请号：US804394
申请日：1997-02-21
申请人： Kazuhide Abe , Shuichi Komatsu , Mitsuaki Izuha , Noburu Fukushima , Kenya Sano , Takashi Kawakubo
发明人： Kazuhide Abe , Shuichi Komatsu , Mitsuaki Izuha , Noburu Fukushima , Kenya Sano , Takashi Kawakubo
IPC分类号： H01L21/02 , H01L29/76
CPC分类号： H01L28/55
摘要： A thin film capacitor including a first electrode having on its surface a (100) face of cubic system or a (001) face of tetragonal system, a dielectric thin film epitaxially grown on the first electrode and exhibiting a crystal structure which inherently belongs to a perovskite structure of cubic system, and a second electrode formed on the dielectric thin film. Further, the dielectric thin film meets the following relationship V/V.sub.0 .gtoreq.1.01 where a unit lattice volume of true perovskite crystal structure belonging to the cubic system (lattice constant a.sub.0) is represented by V.sub.0 =a.sub.0.sup.3, and a unit lattice volume (lattice constant a=b.noteq.c) which is strained toward a tetragonal system after the epitaxial growth is represented by V=a.sup.2 c, and also meets the following relationship c/a.gtoreq.1.01 where c/a represents a ratio between a lattice constant "c" in the direction thicknesswise of the film and a lattice constant "a" in the direction parallel with a plane of the film.
摘要翻译：一种薄膜电容器，包括在其表面上具有立方体系的（100）面或四方晶系的（001）面的第一电极，在第一电极上外延生长并呈现出固有地属于立方体的钙钛矿结构，以及形成在电介质薄膜上的第二电极。此外，电介质薄膜满足以下关系V / V0 / = 1.01，其中属于立方体系的真实钙钛矿晶体结构的单位晶格体积（晶格常数a0）由V0 = a03表示，单位晶格体积晶格常数a = b NOTEQUAL c），其外延生长后由V = a2c表示为四方晶系，并满足以下关系c / a> / = 1.01其中c / a表示晶格常数在膜的厚度方向上的“c”和与膜的平面平行的方向上的晶格常数“a”。

3. 发明授权

US5739563A Ferroelectric type semiconductor device having a barium titanate type dielectric film and method for manufacturing the same 失效
标题翻译：具有钛酸钡型电介质膜的铁电型半导体器件及其制造方法
公开(公告)号：US5739563A
公开(公告)日：1998-04-14
申请号：US559945
申请日：1995-11-17
申请人： Takashi Kawakubo , Kenya Sano , Kazuhide Abe , Shuichi Komatsu , Noburu Fukushima , Kazuhiro Eguchi
发明人： Takashi Kawakubo , Kenya Sano , Kazuhide Abe , Shuichi Komatsu , Noburu Fukushima , Kazuhiro Eguchi
IPC分类号： H01L21/02 , H01L21/8246 , H01L27/115 , H01L29/94 , H01L27/108
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A semiconductor memory device comprising a silicon substrate, a plurality of switching transistors formed on the silicon substrate, an insulating layer having an opening and formed on a surface portion of the silicon substrate where the plurality of switching transistors formed, and a plurality of capacitors for accumulating electric charge formed on the insulating layer and connected respectively to the switching transistors via a conductive film buried in the opening of insulating layer, wherein each of the capacitors for accumulating electric charge is provided with an underlying crystal layer formed on the insulating layer and with a dielectric film consisting essentially of a ferroelectric material and epitaxially or orientationaly grown on the underlying crystal layer, and the switching transistors and the capacitors for accumulating electric charge connected to each other constitute a plurality of memory cells arranged in a two-dimensional pattern.
摘要翻译：一种半导体存储器件，包括硅衬底，形成在硅衬底上的多个开关晶体管，具有开口并形成在形成有多个开关晶体管的硅衬底的表面部分上的绝缘层，以及多个用于累积形成在绝缘层上的电荷，并且经由埋在绝缘层开口中的导电膜分别连接到开关晶体管，其中用于积累电荷的每个电容器设置有形成在绝缘层上的下面的晶体层，基本上由铁电材料构成并在下面的晶体层上生长的外延或取向的电介质膜，并且用于积累彼此连接的电荷的开关晶体管和电容器构成以二维图案布置的多个存储单元。

4. 发明授权

US5986301A Thin film capacitor with electrodes having a perovskite structure and a metallic conductivity 失效
标题翻译：具有电极的薄膜电容器具有钙钛矿结构和金属导电性
公开(公告)号：US5986301A
公开(公告)日：1999-11-16
申请号：US858768
申请日：1997-05-19
申请人： Noburu Fukushima , Takashi Kawakubo , Tatsuo Shimizu
发明人： Noburu Fukushima , Takashi Kawakubo , Tatsuo Shimizu
IPC分类号： C30B29/22 , H01G4/33 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/105 , H01L27/108 , H01L27/115 , H01L27/12 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/1203 , H01L27/11502 , H01L27/11507 , H01L28/75 , H01L27/10808 , H01L27/10829 , H01L28/55
摘要： A thin film capacitor comprises a dielectric thin film having a perovskite structure sandwiched between top and bottom electrodes. At least one of the top and bottom electrodes is made of a conductive oxide material having a perovskite structure represented with a general formula of ABO.sub.3 in which A represents A-site elements composed of at least two of alkaline-earth and rare earth metals, and B represents B-site elements composed of at least one of transition metals. The capacitors involve a small leakage current, occupy a small area, and provide large capacitance. Accordingly, the capacitors realize a high integration semiconductor memory such as a DRAM of gigabit order.
摘要翻译：薄膜电容器包括夹在顶部和底部电极之间的具有钙钛矿结构的电介质薄膜。顶部电极和底部电极中的至少一个由具有由通式ABO 3表示的钙钛矿结构的导电氧化物材料制成，其中A表示由至少两种碱土金属和稀土金属组成的A位元素，以及 B表示由至少一种过渡金属组成的B位元素。电容器的漏电流小，占用面积小，并提供大电容。因此，电容器实现了诸如千兆级DRAM的高集成半导体存储器。

5. 发明授权

US08648431B2 Acoustic semiconductor device 失效
标题翻译：声学半导体器件
公开(公告)号：US08648431B2
公开(公告)日：2014-02-11
申请号：US13220116
申请日：2011-08-29
申请人： Kazuhide Abe , Tadahiro Sasaki , Atsuko Iida , Kazuhiko Itaya , Takashi Kawakubo
发明人： Kazuhide Abe , Tadahiro Sasaki , Atsuko Iida , Kazuhiko Itaya , Takashi Kawakubo
IPC分类号： H01L29/84
CPC分类号： H03J3/20 , H03B5/326 , H03H9/02566
摘要： According to one embodiment, an acoustic semiconductor device includes an element unit, and a first terminal. The element unit includes an acoustic resonance unit. The acoustic resonance unit includes a semiconductor crystal. An acoustic standing wave is excitable in the acoustic resonance unit and is configured to be synchronously coupled with electric charge density within at least one portion of the semiconductor crystal via deformation-potential coupling effect. The first terminal is electrically connected to the element unit. At least one selected from outputting and inputting an electrical signal is implementable via the first terminal. The electrical signal is coupled with the electric charge density. The outputting the electrical signal is from the acoustic resonance unit, and the inputting the electrical signal is into the acoustic resonance unit.
摘要翻译：根据一个实施例，声学半导体器件包括元件单元和第一端子。元件单元包括声共振单元。声共振单元包括半导体晶体。声驻波在声共振单元中是可兴奋的，并且被配置为通过变形电势耦合效应与半导体晶体的至少一部分内的电荷密度同步耦合。第一端子电连接到元件单元。从输出和输入电信号中选出的至少一个可经由第一终端实现。电信号与电荷密度耦合。输出电信号来自声共振单元，并且输入电信号进入声共振单元。

6. 发明授权

US07770274B2 Piezoelectric thin film device and method for manufacturing the same 失效
标题翻译：压电薄膜器件及其制造方法
公开(公告)号：US07770274B2
公开(公告)日：2010-08-10
申请号：US11946910
申请日：2007-11-29
申请人： Kenya Sano , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
发明人： Kenya Sano , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
IPC分类号： H04R17/00
CPC分类号： H03H9/02015 , H01H2057/006 , H01L41/0477 , H01L41/094 , H01L41/316 , H01L41/319 , H03H3/02 , H03H9/02094 , H03H9/173 , H03H9/174 , H03H9/175 , H03H9/542 , H03H9/582 , H03H9/605 , H03H2003/021 , H03H2003/023 , H03H2003/025 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49005 , Y10T29/49117 , Y10T29/49155
摘要： A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.
摘要翻译：压电薄膜器件包括设置在衬底上的非晶金属膜和设置在非晶态金属上的压电膜。压电膜的晶轴之一在垂直于非晶态金属表面的方向上排列。

7. 发明授权

US07675222B2 Thin film piezoelectric actuator 失效
标题翻译：薄膜压电致动器
公开(公告)号：US07675222B2
公开(公告)日：2010-03-09
申请号：US11781667
申请日：2007-07-23
申请人： Takashi Kawakubo , Ryoichi Ohara , Tomio Ono , Toshihiko Nagano , Michihiko Nishigaki , Takaaki Yasumoto , Kazuhide Abe , Kenya Sano
发明人： Takashi Kawakubo , Ryoichi Ohara , Tomio Ono , Toshihiko Nagano , Michihiko Nishigaki , Takaaki Yasumoto , Kazuhide Abe , Kenya Sano
IPC分类号： H01L41/08
CPC分类号： H01G7/06 , H01H2057/006 , H01L41/0933 , H01L41/094
摘要： A thin film piezoelectric actuator comprises a driving part at least one end of which is supported by an anchor portion. The driving part includes: a piezoelectric film, a first lower electrode provided under a first region of the piezoelectric film, a second lower electrode provided under a second region different from the first region of the piezoelectric film, a first upper electrode provided opposite to the first lower electrode on the piezoelectric film, a second upper electrode provided opposite to the second lower electrode on the piezoelectric film, a first connection part that electrically connects the first lower electrode and the second upper electrode via a first via hole formed in the piezoelectric film, and a second connection part that electrically connects the second lower electrode and the first upper electrode via a second via hole formed in the piezoelectric film.
摘要翻译：薄膜压电致动器包括驱动部件，其至少一端由锚固部分支撑。驱动部包括：压电膜，设置在压电膜的第一区域下方的第一下电极，设置在与压电膜的第一区不同的第二区域下方的第二下电极，与第一下电极相对设置的第一上电极压电膜上的第一下电极，与压电膜上的第二下电极相对设置的第二上电极，经由形成在压电膜中的第一通孔电连接第一下电极和第二上电极的第一连接部以及第二连接部，其经由形成在所述压电膜中的第二通路孔电连接所述第二下部电极和所述第一上部电极。

8. 发明申请

US20080072408A1 PIEZOELECTRIC THIN FILM DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：压电薄膜装置及其制造方法
公开(公告)号：US20080072408A1
公开(公告)日：2008-03-27
申请号：US11946910
申请日：2007-11-29
申请人： Kenya SANO , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
发明人： Kenya SANO , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
IPC分类号： H01L41/22 , H04R31/00 , H05K3/10
CPC分类号： H03H9/02015 , H01H2057/006 , H01L41/0477 , H01L41/094 , H01L41/316 , H01L41/319 , H03H3/02 , H03H9/02094 , H03H9/173 , H03H9/174 , H03H9/175 , H03H9/542 , H03H9/582 , H03H9/605 , H03H2003/021 , H03H2003/023 , H03H2003/025 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49005 , Y10T29/49117 , Y10T29/49155
摘要： A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.
摘要翻译：压电薄膜器件包括设置在衬底上的非晶金属膜和设置在非晶态金属上的压电膜。压电膜的晶轴之一在垂直于非晶态金属表面的方向上排列。

9. 发明授权

US07211933B2 Voltage controlled oscillator 失效
标题翻译：压控振荡器
公开(公告)号：US07211933B2
公开(公告)日：2007-05-01
申请号：US10935264
申请日：2004-09-08
申请人： Takashi Kawakubo , Kazuhide Abe , Mayumi Morizuka
发明人： Takashi Kawakubo , Kazuhide Abe , Mayumi Morizuka
IPC分类号： H01L41/08
CPC分类号： H03H9/173 , H03B5/326 , H03B5/366 , H03H9/0542 , H03H2009/02204 , Y10T29/42 , Y10T29/43 , Y10T29/49005 , Y10T29/49155
摘要： The present invention provides a voltage controlled oscillator comprising an thin film BAW resonator and a variable capacitor element. The thin film BAW resonator includes an anchor section formed on a Si substrate, a lower electrode supported on the anchor section and positioned to face the Si substrate, a first piezoelectric film formed on the lower electrode, and an upper electrode formed on the first piezoelectric film. On the other hand, the variable capacitor element includes a stationary electrode formed on a Si substrate, an anchor section formed on the Si substrate, a first electrode supported on the anchor section and positioned to face the Si substrate, a second piezoelectric film formed on the first electrode, and a second electrode formed on the second piezoelectric film.
摘要翻译：本发明提供一种包括薄膜BAW谐振器和可变电容器元件的压控振荡器。薄膜BAW谐振器包括形成在Si衬底上的锚定部分，支撑在锚固部分上并定位成面对Si衬底的下电极，形成在下电极上的第一压电膜，以及形成在第一压电电影。另一方面，可变电容器元件包括形成在Si衬底上的固定电极，形成在Si衬底上的锚定部分，支撑在锚定部分上并且定位成面对Si衬底的第一电极，形成在第二压电膜上的第二压电膜第一电极和形成在第二压电膜上的第二电极。

10. 发明申请

US20060285255A1 Micro-mechanical device, micro-switch, variable capacitor high frequency circuit and optical switch 失效
公开(公告)号：US20060285255A1
公开(公告)日：2006-12-21
申请号：US11400407
申请日：2006-04-10
申请人： Takashi Kawakubo , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki
发明人： Takashi Kawakubo , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki
IPC分类号： G11B21/24
CPC分类号： B81B3/0021 , B81B2201/014 , B81B2201/045 , G02B26/0858 , H01G5/18 , H01G5/40 , H01H2057/006
摘要： A micro-mechanical device includes a first piezoelectric actuator including a piezoelectric film, and lower and upper electrodes interleaving the piezoelectric film, and extending from a first fixing part on a substrate to a first operating end, and a second piezoelectric actuator connected to the first piezoelectric actuator via a connecting part at the first operating end of the first piezoelectric actuator, and extending from the connecting part to a second operating end, the second piezoelectric actuator being shorter than the first piezoelectric actuator.

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