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1. 发明申请

US20060021666A1 Microsystem, microopening film, and system and method for analizing interaction between biomolecules 审中-公开
标题翻译：微系统微显微镜，用于分析生物分子之间相互作用的系统和方法
公开(公告)号：US20060021666A1
公开(公告)日：2006-02-02
申请号：US10533107
申请日：2003-10-30
申请人： Takashi Funatsu , Shuichi Shoji , Yasuo Wada , Ken Tsutsui , Jun Mizuno , Yoshitaka Shirasaki
发明人： Takashi Funatsu , Shuichi Shoji , Yasuo Wada , Ken Tsutsui , Jun Mizuno , Yoshitaka Shirasaki
IPC分类号： G05D7/06
CPC分类号： G01N35/08 , B01L3/502715 , B01L3/50273 , B01L3/502738 , B01L3/502784 , B01L2300/089 , B01L2400/0442 , B01L2400/082 , F16K99/0001 , F16K99/0028 , F16K99/0036 , F16K2099/0073 , F16K2099/0084 , G01N2035/00158 , Y10T137/2196
摘要： A micro system capable of setting an appropriate amount of stimulation being applied in order to control liquid flow in a channel. The micro system comprises micro-heaters (5b, 5c) for applying stimulation to liquid flowing through liquid channels (2b, 2c) formed in a plate (1) and controlling liquid flow by the stimulation from the micro-heaters (5b, 5c), and a means for electrically controlling the amount of stimulation being applied to the liquid from the micro-heaters (5b, 5c). An appropriate amount of stimulation can be set by electrically controlling the amount of stimulation being applied to the liquid from the micro-heaters (5b, 5c) through the control means.
摘要翻译：能够设定适当量的刺激以便控制通道中的液体流动的微系统。微系统包括用于对形成在板（1）中的液体通道（2b，2c）流动的液体施加刺激的微加热器（5c，5c），并通过微加热器的刺激来控制液体流动 5b，5c）和用于电控制来自微加热器（5b，5c）的液体的刺激量的装置。可以通过电控制通过控制装置从微加热器（5b，5c）施加到液体的刺激量来设定适当量的刺激。

2. 发明申请

US20120025196A1 ORGANIC THIN FILM TRANSISTOR AND SEMICONDUCTOR INTEGRATED CIRCUIT 审中-公开
标题翻译：有机薄膜晶体管和半导体集成电路
公开(公告)号：US20120025196A1
公开(公告)日：2012-02-02
申请号：US13263122
申请日：2010-01-18
申请人： Yasuo Wada , Toru Toyabe , Ken Tsutsui
发明人： Yasuo Wada , Toru Toyabe , Ken Tsutsui
IPC分类号： H01L51/10
CPC分类号： H01L51/002 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： An organic thin film transistor includes an organic semiconductor layer, a source electrode and a drain electrode which are separated from each other and are individually in contact with the organic semiconductor layer, a gate insulating film which is in contact with the organic semiconductor layer between the source and drain electrodes, and a gate electrode which is opposed to the organic semiconductor layer and is in contact with the gate insulating film. In the organic thin film transistor, a high-concentration region of the organic semiconductor layer which is located near the source electrode has an impurity concentration set higher than an impurity concentration of a low-concentration region of the organic semiconductor layer, the low-concentration region being located near the gate electrode in the thickness direction of the organic semiconductor layer between the source and drain electrodes.
摘要翻译：有机薄膜晶体管包括彼此分离并分别与有机半导体层接触的有机半导体层，源电极和漏电极，在有机半导体层之间与有机半导体层接触的栅极绝缘膜源极和漏极以及与有机半导体层相对并与栅极绝缘膜接触的栅电极。在有机薄膜晶体管中，位于源电极附近的有机半导体层的高浓度区域的杂质浓度设定为高于有机半导体层的低浓度区域的杂质浓度，低浓度区域位于源极和漏极之间的有机半导体层的厚度方向上的栅电极附近。

3. 发明授权

US4412236A Color solid-state imager 失效
标题翻译：彩色固态成像仪
公开(公告)号：US4412236A
公开(公告)日：1983-10-25
申请号：US180042
申请日：1980-08-21
申请人： Akira Sasano , Toshio Nakano , Ken Tsutsui , Michiaki Hashimoto , Tadao Kaneko , Norio Koike , Akiya Izumi
发明人： Akira Sasano , Toshio Nakano , Ken Tsutsui , Michiaki Hashimoto , Tadao Kaneko , Norio Koike , Akiya Izumi
IPC分类号： H01L27/146 , H01L27/14 , H01L27/02 , H01L29/78
CPC分类号： H01L27/14645 , H01L27/14609 , H01L27/14621 , H01L27/14667
摘要： A color solid-state imager comprising a semiconductor body which has a photoelectric conversion function and which includes at least photosensitive elements and switching elements, and predetermined color filters which are formed on the body; characterized in that a light absorbing layer is disposed at least over a vicinity of an output terminal of each switching element. The contours of the color filters can be accurately formed, and unnecessary light can be intercepted to stabilize the electrical characteristics of the solid-state imager.
摘要翻译：一种彩色固态成像器，包括具有光电转换功能并且至少包括光敏元件和开关元件的半导体本体和形成在本体上的预定滤色器; 其特征在于，至少在每个开关元件的输出端子的附近设置光吸收层。可以精确地形成滤色器的轮廓，并且可以截取不必要的光以稳定固态成像器的电特性。

4. 发明申请

US20060247806A1 Development aid device 有权
标题翻译：发展援助装置
公开(公告)号：US20060247806A1
公开(公告)日：2006-11-02
申请号：US11475521
申请日：2006-06-26
申请人： Makoto Inoue , Ken Tsutsui , Takashi Miyake
发明人： Makoto Inoue , Ken Tsutsui , Takashi Miyake
IPC分类号： G05B11/01 , G05B19/42
CPC分类号： G05B19/056 , G05B19/0426 , G05B2219/13043 , G05B2219/13052 , Y10S715/97
摘要： A development aid device for development of a ladder program such as a user program for a programmable controller has a program memory for storing the user program and an outline data generating part for sequentially scanning constituent elements of this stored user program to extract specified elements including output commands and generating outline data by assigning individual index numbers to these extracted elements sequentially in the order of their appearance on the user program. An outline data memory stores the generated outline data. A cross-reference data generating part generates cross-reference data by extracting commands having a same operand from the user program, and a cross-reference data memory stores the generated cross-reference data. A display device is provided with a user program display area for displaying the user program, an outline data display area for displaying the generated outline data in a tree form in the order of appearance, and a cross-reference data display area for displaying the cross-reference data.
摘要翻译：用于开发诸如用于可编程控制器的用户程序的梯形图程序的显影辅助装置具有用于存储用户程序的程序存储器和用于顺序扫描该存储的用户程序的组成元素的轮廓数据生成部件，以提取包括输出的指定元素通过按照用户程序出现的顺序依次分配各个索引号到这些提取的元素来生成轮廓数据。轮廓数据存储器存储生成的轮廓数据。交叉引用数据生成部分通过从用户程序提取具有相同操作数的命令来生成交叉引用数据，并且交叉引用数据存储器存储所生成的交叉引用数据。显示装置设置有用于显示用户程序的用户程序显示区域，用于以外观的顺序以树形式显示所生成的轮廓数据的轮廓数据显示区域和用于显示十字路口的交叉参考数据显示区域参考资料。

5. 发明授权

US5672523A Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and liquid crystal display equipment 失效
标题翻译：薄膜晶体管基板，其制造方法，液晶显示面板和液晶显示设备
公开(公告)号：US5672523A
公开(公告)日：1997-09-30
申请号：US451209
申请日：1995-05-26
申请人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
发明人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
IPC分类号： G02F1/1343 , G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , G09G3/36 , H01L21/3205 , H01L21/336 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786 , H01L21/84
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/136213 , H01L29/4908 , H01L2924/0002
摘要： The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. Cr or Ta is used for gate terminals; aluminum or a metal composed mainly of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance); and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, for the anodic oxidation, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .beta..gtoreq.110-20T(T: film thickness of the positive type photoresist). The photoresist is subjected to a heat treatment prior to and after exposure, preferably the after-treatment being performed before developing. The anodic oxidation film is heat-treated after formation, to reduce the leak current.
摘要翻译：本发明涉及使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用该TFT基板的液晶显示面板和使用该液晶显示面板的液晶显示装置。 Cr或Ta用于栅极端子; 铝或主要由铝组成的金属用于从其延伸的栅极总线，栅电极和薄膜电容（附加电容，存储电容）; 并且由金属构成并且没有缺陷的阳极氧化膜用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一种。在用正型光致抗蚀剂形成选择性氧化掩模到铝图案上的所需区域时，为了阳极氧化，在选择性氧化掩模和铝图案之间形成的角度（θ）被制成： 20T（T：正型光致抗蚀剂的膜厚）。在曝光之前和之后对光致抗蚀剂进行热处理，优选在显影之前进行后处理。阳极氧化膜在形成后进行热处理，以减少漏电流。

6. 发明授权

US5032531A Method of manufacturing active matrix panel 失效
标题翻译：有源矩阵面板的制造方法
公开(公告)号：US5032531A
公开(公告)日：1991-07-16
申请号：US376866
申请日：1989-07-07
申请人： Ken Tsutsui , Toshihisa Tsukada , Hideaki Yamamoto , Yasuo Tanaka , Haruo Matsumaru
发明人： Ken Tsutsui , Toshihisa Tsukada , Hideaki Yamamoto , Yasuo Tanaka , Haruo Matsumaru
IPC分类号： G02F1/136 , G02F1/1343 , G02F1/1362 , G02F1/1368 , G09F9/30 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/78 , H01L29/786
CPC分类号： G02F1/1368 , H01L27/1214 , H01L29/66765 , G02F1/136213
摘要： In a first manufacturing step of an active matrix liquid-crystal panel, a transparent conductor film and a metal film are sequentially accumulated on a substrate in this order so as to form a two-layer film. The two-layer film including the transparent conductor film and the metal film is subjected to photoetching to simultaneously form at least a pixel electrode (transparent conductor film) and a gate electrode (metal film) of a thin-film transistor according to a predetermined pattern. In a fabrication process near the end of the fabrication, when the source and drain electrodes of the thin-film transistors are formed, the metal film on the pixel electrode is simultaneously removed. Since the removal of the metal film protecting the pixel electrode is simultaneously achieved at a point near the final process, protection of the pixel electrode is guaranteed, thereby realizing improvement of the yielding and reduction of the production process.
摘要翻译：在有源矩阵液晶面板的第一制造工序中，依次将透明导体膜和金属膜累积在基板上，形成双层膜。对包含透明导体膜和金属膜的两层膜进行光刻，以至少形成根据预定图案的薄膜晶体管的像素电极（透明导体膜）和栅电极（金属膜）。在接近制造结束的制造工艺中，当形成薄膜晶体管的源极和漏极时，同时去除像素电极上的金属膜。由于保护像素电极的金属膜的去除同时在最终工艺附近实现，因此保护像素电极的保护，从而实现生产过程的屈服和减少的改善。

7. 发明授权

US07272825B2 Development aid device 有权
标题翻译：发展援助装置
公开(公告)号：US07272825B2
公开(公告)日：2007-09-18
申请号：US11475521
申请日：2006-06-26
申请人： Makoto Inoue , Ken Tsutsui , Takashi Miyake
发明人： Makoto Inoue , Ken Tsutsui , Takashi Miyake
IPC分类号： G06F9/44 , G06F3/48 , G05B11/01
CPC分类号： G05B19/056 , G05B19/0426 , G05B2219/13043 , G05B2219/13052 , Y10S715/97
摘要： A development aid device for development of a ladder program such as a user program for a programmable controller has a program memory for storing the user program and an outline data generating part for sequentially scanning constituent elements of this stored user program to extract specified elements including output commands and generating outline data by assigning individual index numbers to these extracted elements sequentially in the order of their appearance on the user program. An outline data memory stores the generated outline data. A cross-reference data generating part generates cross-reference data by extracting commands having a same operand from the user program, and a cross-reference data memory stores the generated cross-reference data. A display device is provided with a user program display area for displaying the user program, an outline data display area for displaying the generated outline data in a tree form in the order of appearance, and a cross-reference data display area for displaying the cross-reference data.
摘要翻译：用于开发诸如用于可编程控制器的用户程序的梯形图程序的显影辅助装置具有用于存储用户程序的程序存储器和用于顺序扫描该存储的用户程序的组成元素的轮廓数据生成部件，以提取包括输出的指定元素通过按照用户程序出现的顺序依次分配各个索引号到这些提取的元素来生成轮廓数据。轮廓数据存储器存储生成的轮廓数据。交叉引用数据生成部分通过从用户程序提取具有相同操作数的命令来生成交叉引用数据，并且交叉引用数据存储器存储所生成的交叉引用数据。显示装置设置有用于显示用户程序的用户程序显示区域，用于以外观的顺序以树形式显示所生成的轮廓数据的轮廓数据显示区域和用于显示十字路口的交叉参考数据显示区域参考资料。

8. 发明授权

US5889573A Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and liquid crystal display equipment 失效
标题翻译：薄膜晶体管基板，其制造方法，液晶显示面板和液晶显示设备
公开(公告)号：US5889573A
公开(公告)日：1999-03-30
申请号：US928719
申请日：1997-09-12
申请人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
发明人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
IPC分类号： G02F1/1343 , G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , G09G3/36 , H01L21/3205 , H01L21/336 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786 , H01L29/04
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/136213 , H01L29/4908 , H01L2924/0002
摘要： The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel and, more in particular, it relates to a structure and a manufacturing method which enables to improve the characteristics thereof.In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus-lines.The present invention also relates to a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).
摘要翻译：本发明涉及使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用TFT基板的液晶显示面板和使用该液晶显示面板的液晶显示设备，更具体地，涉及能够改善其特性的结构和制造方法。在本发明中，Cr或Ta用于栅极端子，铝或主要由铝组成的金属用于从其延伸的栅极总线，栅电极和薄膜电容（附加电容，存储电容）和阳极氧化膜由金属构成并且没有缺陷用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一个。在更优选的结构中，阳极氧化膜用于所有栅极绝缘体，用于薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜。本发明还涉及在铝图案上选择性地形成阳极氧化膜的方法。也就是说，在使用正型光致抗蚀剂在铝图案上的期望区域上形成选择性氧化掩模的情况下，在本发明中，在选择性氧化掩模和铝图案之间形成的角度（θ）为： θ= 110-20T（T：正型光致抗蚀剂的膜厚度）。

9. 发明授权

US5359206A Thin film transistor substrate, liquid crystal display panel and liquid crystal display equipment 失效
标题翻译：薄膜晶体管基板，液晶显示面板和液晶显示设备
公开(公告)号：US5359206A
公开(公告)日：1994-10-25
申请号：US674328
申请日：1991-04-15
申请人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
发明人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
IPC分类号： G02F1/1343 , G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , G09G3/36 , H01L21/3205 , H01L21/336 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786 , H01L29/04 , H01L23/48 , H01L27/01 , H01L31/036
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/136213 , H01L29/4908 , H01L2924/0002
摘要： Disclosed is an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. In the TFT substrate, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extending therefrom, for gate electrodes, and for electrodes of thin film capacitors (additional capacitance, storage capacitance), and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulating films for the intersections between the bus-lines. Also disclosed is a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).
摘要翻译： PCT No.PCT / JP90 / 01039 Sec。 371日期：1991年4月15日 102（e）日期1991年4月15日PCT提交1990年8月13日PCT公布。 WO91 / 02999 PCT出版物 1991年3月7日公开。公开是使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用TFT基板的液晶显示面板和使用液体的液晶显示设备水晶显示面板。在TFT基板中，使用Cr或Ta作为栅极端子，铝或主要由铝构成的金属用于从栅极电极延伸的栅极总线，以及用于薄膜电容器的电极（附加电容，存储电容）并且由金属构成并且没有缺陷的阳极氧化膜用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一种。还公开了在铝图案上选择性地形成阳极氧化膜的方法。也就是说，在使用正型光致抗蚀剂在铝图案上的期望区域上形成选择性氧化掩模的情况下，在本发明中，在选择性氧化掩模和铝图案之间形成的角度（θ）为： θ= 110-20T（T：正型光致抗蚀剂的膜厚度）。

10. 发明授权

US4331506A Method of manufacturing target of image pickup tube 失效
标题翻译：摄像管目标的制造方法
公开(公告)号：US4331506A
公开(公告)日：1982-05-25
申请号：US212213
申请日：1980-12-02
申请人： Akira Sasano , Toshio Nakano , Ken Tsutsui , Chushiro Kusano , Tadaaki Hirai , Eiichi Maruyama
发明人： Akira Sasano , Toshio Nakano , Ken Tsutsui , Chushiro Kusano , Tadaaki Hirai , Eiichi Maruyama
IPC分类号： H01J9/233 , H01J31/46 , H01J31/26
CPC分类号： H01J31/46 , H01J9/233
摘要： A method of manufacturing a target of an image pickup tube comprising the steps of: forming a plurality of groups of transparent conductive signal electrodes on a transparent insulating base plate; forming a first layer on at least a portion constituting an image area of the image pickup tube, said first layer being substantially insoluble in etching liquid used for etching an insulating layer to constitute an intermediate layer insulator in a double layered interconnection structure; forming, after formation of said first layer, an insulating layer to constitute said intermediate-layer insulator; removing a predetermined portion of said insulating layer, removing said first layer together with said insulating layer located thereon; forming bus bars; and forming a photoconductive layer on said plurality of groups of the transparent conductive signal electrodes.This invention provides an excellent method for mass production.
摘要翻译：一种制造图像拾取管的目标的方法，包括以下步骤：在透明绝缘基板上形成多组透明导电信号电极; 在构成图像拾取管的图像区域的至少一部分上形成第一层，所述第一层基本上不溶于用于蚀刻绝缘层的蚀刻液，以构成双层互连结构中的中间层绝缘体; 在形成所述第一层之后形成构成所述中间层绝缘体的绝缘层; 去除所述绝缘层的预定部分，与位于其上的所述绝缘层一起去除所述第一层; 形成母线; 以及在所述多个透明导电信号电极组上形成光电导层。本发明提供了一种很好的批量生产方法。

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